V212S
Abstract: AQV21S AQV212SX AQV212SZ AQV212
Text: GU SOP 1 Form A AQV21S Miniature SOP6-pin type of 60 to 400V load voltage GU SOP 1 Form A (AQV21S) AQV21S FEATURES 4.4 .173 6.3 .248 2.1 .083 CAD Data mm inch 1 6 2 5 3 4 1. Controls low-level analog signals PhotoMOS relays feature extremely low
|
Original
|
PDF
|
AQV21S)
AQV21S
AQV212S
AQV212S
AQV215S
AQV215S
AQV214S
AQV210S
AQV217S
V212S
AQV21S
AQV212SX
AQV212SZ
AQV212
|
Untitled
Abstract: No abstract text available
Text: APTGF30TL601G VCES = 600V IC = 30A @ Tc = 80°C Three level inverter NPT IGBT Power Module Application • Solar converter Uninterruptible Power Supplies Features Non Punch Through NPT Fast IGBT - Low voltage drop - Low tail current - Switching frequency up to 100 kHz
|
Original
|
PDF
|
APTGF30TL601G
|
11 pin relay NO NC ac 24v
Abstract: KAQW614 W614 solid state electronics corporation relay
Text: PRODUCT SPECIFICATION DATE：11/22/2004 SOLID STATE RELAY - MOSFET OUTPUT NO.60M22004 VER. cosmo KAQW614 ELECTRONICS CORPORATION SHEET 1 OF 10 1 OUTSIDE DIMENSION︰ W614 XXX Date Code 7.62 9.88 0.26 13.00° 2.70 0.4 3.00 3.50 6.50 0.5 1.20 Unit︰mm Tolerance︰ ± 0.2mm
|
Original
|
PDF
|
DATE11/22/2004
60M22004
KAQW614
50mAat
11 pin relay NO NC ac 24v
KAQW614
W614
solid state electronics corporation relay
|
Relay Mosfet Output
Abstract: KAQW614H cosmo1
Text: PRODUCT SPECIFICATION DATE：04/20/2005 SOLID STATE RELAY - MOSFET OUTPUT NO.60M22005 REV. cosmo KAQW614H ELECTRONICS CORPORATION SHEET 1 OF 10 1 z OUTSIDE DIMENSION︰ W614H XXX Date Code 7.62 9.88 2.40 0.4 2.70 3.50 6.50 0.5 1.20 0.26 Unit︰mm Tolerance︰±0.2mm
|
Original
|
PDF
|
DATE04/20/2005
60M22005
KAQW614H
W614H
50mAat
60M22005
Relay Mosfet Output
KAQW614H
cosmo1
|
ssr schematic circuit
Abstract: KAQW614H
Text: PRODUCT SPECIFICATION DATE：03/01/2005 SOLID STATE RELAY - MOSFET OUTPUT cosmo KAQW614H ELECTRONICS CORPORATION Preliminary REV. SHEET 1 OF 10 z OUTSIDE DIMENSION︰ W614H XXX Date Code 7.62 9.88 0.26 2.70 0.4 3.00 3.50 6.50 13.00° Unit︰mm Tolerance︰±0.2mm
|
Original
|
PDF
|
DATE03/01/2005
KAQW614H
W614H
50mAat
ssr schematic circuit
KAQW614H
|
Untitled
Abstract: No abstract text available
Text: Advance Technical Information IXYT30N65C3H1HV IXYH30N65C3H1 XPTTM 650V IGBT GenX3TM w/ Sonic Diode Extreme Light Punch Through IGBT for 20-60kHz Switching VCES = IC110 = VCE sat tfi(typ) = 650V 30A 2.7V 24ns TO-268HV Symbol Test Conditions Maximum Ratings
|
Original
|
PDF
|
IXYT30N65C3H1HV
IXYH30N65C3H1
20-60kHz
IC110
O-268HV
IF110
30N65C3
|
Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information IXYH30N65C3 XPTTM 650V IGBT GenX3TM VCES = IC110 = VCE sat tfi(typ) = Extreme Light Punch Through IGBT for 20-60kHz Switching 650V 30A 2.7V 24ns TO-247 Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C
|
Original
|
PDF
|
IXYH30N65C3
IC110
20-60kHz
O-247
30N65C3
4D-R47)
|
Untitled
Abstract: No abstract text available
Text: Advance Technical Information XPTTM 650V IGBT GenX3TM IXYH75N65C3 VCES = IC110 = VCE sat tfi(typ) = Extreme Light Punch through IGBT for 20-60kHz Switching TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M
|
Original
|
PDF
|
IXYH75N65C3
IC110
20-60kHz
O-247
75N65C3
71-R47)
|
Untitled
Abstract: No abstract text available
Text: GenX3TM 600V IGBTs IXGA36N60A3 IXGP36N60A3 IXGH36N60A3 VCES = 600V IC110 = 36A VCE sat 1.4V TO-263 AA (IXGA) Ultra Low Vsat PT IGBT for up to 5kHz Switching G E C (Tab) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1M
|
Original
|
PDF
|
IXGA36N60A3
IXGP36N60A3
IXGH36N60A3
IC110
O-263
O-220AB
36N60A3
7-22-13-B
|
Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information IXYH40N65C3 XPTTM 650V IGBT GenX3TM VCES = IC110 = VCE sat tfi(typ) = Extreme Light Punch Through IGBT for 20-60 kHz Switching 650V 40A 2.2V 52ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C
|
Original
|
PDF
|
IXYH40N65C3
IC110
O-247
40N65C3H1
|
Untitled
Abstract: No abstract text available
Text: Advance Technical Information XPTTM 650V IGBT GenX3TM w/ Sonic Diode IXYH75N65C3H1 VCES = IC110 = VCE sat tfi(typ) = 650V 75A 2.3V 50ns Extreme Light Punch through IGBT for 20-60kHz Switching TO-247 AD Symbol Test Conditions Maximum Ratings VCES
|
Original
|
PDF
|
IXYH75N65C3H1
IC110
20-60kHz
O-247
IF110
75N65C3
71-R47)
|
Untitled
Abstract: No abstract text available
Text: Advance Technical Information IXXH30N60C3 XPTTM 600V IGBT GenX3TM VCES = IC110 = VCE sat tfi(typ) = Extreme Light Punch Through IGBT for 20-60 kHz Switching 600V 30A 2.2V 32ns TO-247 Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C
|
Original
|
PDF
|
IXXH30N60C3
IC110
O-247
30N60C3D1
|
Untitled
Abstract: No abstract text available
Text: Advance Technical Information XPTTM 650V IGBT GenX3TM IXYH100N65C3 VCES = IC110 = VCE sat tfi(typ) = Extreme Light Punch Through IGBT for 20-60kHz Switching 650V 100A 2.30V 50ns TO-247 Symbol Test Conditions VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M
|
Original
|
PDF
|
IXYH100N65C3
IC110
20-60kHz
O-247
100N65C3
|
IRGP4650D
Abstract: IRGP4650DPBF irgp4650dp
Text: IRGP4650DPbF IRGP4650D-EPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V C C C IC = 50A, TC = 100°C tSC 5 s, TJ max = 175°C G VCE(on) typ. = 1.60V @ IC = 35A E n-channel Applications • Industrial Motor Drive
|
Original
|
PDF
|
IRGP4650DPbF
IRGP4650D-EPbF
O-247AC
IRGP4650DPbF
O-247AD
IRGP4650D-EP
IRGP4650DPbF/IRGP4650D-EPbF
IRGP4650D
irgp4650dp
|
|
|
2536A
Abstract: No abstract text available
Text: Preliminary Technical Information IXYA50N65C3 IXYP50N65C3 IXYH50N65C3 XPTTM 650V IGBTs GenX3TM VCES = IC110 = VCE sat tfi(typ) = Extreme Light Punch Through IGBT for 20-60kHz Switching 650V 50A 2.10V 27ns TO-263 (IXYA) G E C (Tab) Symbol Test Conditions
|
Original
|
PDF
|
IXYA50N65C3
IXYP50N65C3
IXYH50N65C3
IC110
20-60kHz
O-263
O-247
50N65C3
2536A
|
Untitled
Abstract: No abstract text available
Text: Advance Technical Information IXYP15N65C3D1M XPTTM 650V IGBT GenX3TM w/Diode Extreme Light Punch Through IGBT for 20-60kHz Switching VCES = IC110 = VCE sat tfi(typ) = 650V 8A 2.5V 28ns OVERMOLDED TO-220 Symbol Test Conditions Maximum Ratings
|
Original
|
PDF
|
IXYP15N65C3D1M
20-60kHz
IC110
O-220
IF110
15N65C3
0-13-A
|
15n65
Abstract: No abstract text available
Text: Advance Technical Information IXYP15N65C3D1 XPTTM 650V IGBT GenX3TM w/Diode VCES = IC110 = VCE sat tfi(typ) = Extreme Light Punch Through IGBT for 20-60kHz Switching 650V 15A 2.5V 28ns TO-220 Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C
|
Original
|
PDF
|
IXYP15N65C3D1
IC110
20-60kHz
O-220
IF110
15N65C3
0-13-A
15n65
|
Untitled
Abstract: No abstract text available
Text: Advance Technical Information IXYH50N65C3 XPTTM 650V IGBT GenX3TM VCES = IC110 = VCE sat tfi(typ) = Extreme Light Punch Through IGBT for 20-60kHz Switching 650V 50A 2.1V 27ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C
|
Original
|
PDF
|
IXYH50N65C3
IC110
20-60kHz
O-247
50N65C3
|
Untitled
Abstract: No abstract text available
Text: Advance Technical Information IXXQ30N60B3M XPTTM 600V IGBT GenX3TM VCES = IC110 = VCE sat tfi(typ) = (Electrically Isolated Tab) 600V 19A 1.85V 125ns Extreme Light Punch Through IGBT for 5-30 kHz Switching OVERMOLDED (IXXQ.M) OUTLINE Symbol
|
Original
|
PDF
|
IXXQ30N60B3M
IC110
125ns
30N60B3D1
|
Untitled
Abstract: No abstract text available
Text: APTGV50H60BT3G Full – Bridge + boost chopper NPT & Trench + Field Stop IGBT3 Power module Trench & Field Stop IGBT3 Q1, Q3: VCES = 600V ; IC = 50A @ Tc = 80°C NPT IGBT Q2, Q4: VCES = 600V ; IC = 50A @ Tc = 80°C CoolMOS Q5: VDSS = 600V RDSon = 45m max @ Tj = 25°C
|
Original
|
PDF
|
APTGV50H60BT3G
|
30N60B3D
Abstract: No abstract text available
Text: IXXH30N60B3 XPTTM 600V IGBT GenX3TM VCES = IC110 = VCE sat tfi(typ) = Extreme Light Punch Through IGBT for 5-30 kHz Switching 600V 30A 1.85V 125ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M
|
Original
|
PDF
|
IXXH30N60B3
IC110
125ns
O-247
30N60B3D1
30N60B3D
|
IRGP4660
Abstract: IRGP4660D-EPBF
Text: IRGP4660DPbF IRGP4660D-EPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V C IC = 60A, TC = 100°C C C tSC 5 s, TJ max = 175°C G VCE(on) typ. = 1.60V @ IC = 48A E n-channel Applications • Industrial Motor Drive
|
Original
|
PDF
|
IRGP4660DPbF
IRGP4660D-EPbF
O-247AC
IRGP4660DPbF
O-247AD
IRGP4660D-EP
IRGP4660DPbF/IRGP4660D-EPbF
JESD22-A114)
IRGP4660
IRGP4660D-EPBF
|
Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information XPTTM 650V IGBT GenX4TM IXXK200N65B4 IXXX200N65B4 VCES = IC110 = VCE sat tfi(typ) = Extreme Light Punch Through IGBT for 10-30kHz Switching 650V 200A 1.7V 80ns TO-264 (IXXK) Symbol Test Conditions VCES VCGR TJ = 25°C to 175°C
|
Original
|
PDF
|
IXXK200N65B4
IXXX200N65B4
IC110
10-30kHz
O-264
200N65B4
4-14-A
|
cosmo W214
Abstract: KAQW214 W214
Text: PRODUCT SPECIFICATION DATE：03/07/2008 RoHS Compliance SOLID STATE RELAY - MOSFET OUTPUT NO.60M20006 REV. cosmo KAQW214 ELECTRONICS CORPORATION SHEET 1 OF 7 2 z OUTSIDE DIMENSION︰ cosmo W214 XXX Date Code 7.62 9.68 0.26 2.70 0.4 3.00 3.50 6.50 0.5 1.20
|
Original
|
PDF
|
DATE03/07/2008
60M20006
KAQW214
50mAat
60M20006
cosmo W214
KAQW214
W214
|
