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    400V 6A TRANSISTOR Search Results

    400V 6A TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    RJP4013ASP-00#J5 Renesas Electronics Corporation IGBT 400V 150A SOP-8 Visit Renesas Electronics Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    400V 6A TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    g6n50e

    Abstract: G6N50 HGTD6N40E1 HGTD6N40E1S HGTD6N50E1 HGTD6N50E1S
    Text: HGTD6N40E1, HGTD6N40E1S, HGTD6N50E1, HGTD6N50E1S 6A, 400V and 500V N-Channel IGBTs March 1997 Features Packages HGTD6N40E1, HGTD6N50E1 JEDEC TO-251AA • 6A, 400V and 500V • VCE ON : 2.5V Max. EMITTER • TFALL: 1.0µs • Low On-State Voltage COLLECTOR


    Original     		HGTD6N40E1, HGTD6N40E1S, HGTD6N50E1, HGTD6N50E1S HGTD6N50E1 O-251AA O-252AA g6n50e G6N50 HGTD6N40E1 HGTD6N40E1S HGTD6N50E1 HGTD6N50E1S PDF

    g6n50e

    Abstract: HGTD6N40E1 HGTD6N40E1S HGTD6N50E1 HGTD6N50E1S G6N40E G6N50
    Text: HGTD6N40E1, HGTD6N40E1S, HGTD6N50E1, HGTD6N50E1S S E M I C O N D U C T O R 6A, 400V and 500V N-Channel IGBTs March 1997 Features Packages HGTD6N40E1, HGTD6N50E1 JEDEC TO-251AA • 6A, 400V and 500V • VCE ON : 2.5V Max. EMITTER • TFALL: 1.0µs • Low On-State Voltage


    Original     		HGTD6N40E1, HGTD6N40E1S, HGTD6N50E1, HGTD6N50E1S HGTD6N50E1 O-251AA O-252AA g6n50e HGTD6N40E1 HGTD6N40E1S HGTD6N50E1 HGTD6N50E1S G6N40E G6N50 PDF

    G6N50E1D

    Abstract: hGtp6N50E1D G6N50E1 G6N50 HGTP6N40E1D G6N50E
    Text: HGTP6N40E1D, HGTP6N50E1D S E M I C O N D U C T O R 6A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes April 1995 Features Package JEDEC TO-220AB • 6A, 400V and 500V EMITTER COLLECTOR GATE • Latch Free Operation • TFALL: < 1.0µs • High Input Impedance


    Original     		HGTP6N40E1D, HGTP6N50E1D O-220AB 150oC. 150oC 100oC -50oC G6N50E1D hGtp6N50E1D G6N50E1 G6N50 HGTP6N40E1D G6N50E PDF

    Untitled

    Abstract: No abstract text available
    Text: FRFET TM FQP6N40CF/FQPF6N40CF 400V N-Channel MOSFET Features Description • 6A, 400V, RDS on = 1.1 Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		FQP6N40CF/FQPF6N40CF PDF

    MOSFET 400V TO-220

    Abstract: MOSFET 400V FQP6N40CF FQPF6N40CF FQPF Series
    Text: FRFET TM FQP6N40CF/FQPF6N40CF 400V N-Channel MOSFET Features Description • 6A, 400V, RDS on = 1.1 Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		FQP6N40CF/FQPF6N40CF FQP6N40CF/FQPF6N40CF MOSFET 400V TO-220 MOSFET 400V FQP6N40CF FQPF6N40CF FQPF Series PDF

    FQPF Series

    Abstract: MOSFET 400V FQP6N40CF FQPF6N40CF N-Channel mosfet 400v to220
    Text: FRFET TM FQP6N40CF/FQPF6N40CF 400V N-Channel MOSFET Features Description • 6A, 400V, RDS on = 1.1 Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		FQP6N40CF/FQPF6N40CF FQP6N40CF/FQPF6N40CF FQPF Series MOSFET 400V FQP6N40CF FQPF6N40CF N-Channel mosfet 400v to220 PDF

    Untitled

    Abstract: No abstract text available
    Text: FRFET TM FQP6N40CF/FQPF6N40CF 400V N-Channel MOSFET Features Description • 6A, 400V, RDS on = 1.1 Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		FQP6N40CF/FQPF6N40CF FQP6N40CF/FQPF6N40CF PDF

    FQP6N40CF

    Abstract: No abstract text available
    Text: FQP6N40CF 400V N-Channel MOSFET Features Description • 6A, 400V, RDS on = 1.1 Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 16nC)


    Original     		FQP6N40CF FQP6N40CF PDF

    Untitled

    Abstract: No abstract text available
    Text: TM FQP6N40CF 400V N-Channel MOSFET Features Description • 6A, 400V, RDS on = 1.1 Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 16nC)


    Original     		FQP6N40CF FQP6N40CF PDF

    FQB6N40CF

    Abstract: FQB6N40CFTM
    Text: FRFET TM FQB6N40CF 400V N-Channel MOSFET Features Description • 6A, 400V, RDS on = 1.1 Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 16nC)


    Original     		FQB6N40CF FQB6N40CF FQB6N40CFTM PDF

    RURP640CC

    Abstract: RURP650CC RURP660CC
    Text: RURP640CC, RURP650CC, RURP660CC 6A, 400V - 600V Ultrafast Dual Diodes April 1995 Features Package • Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . . <55ns • Operating Temperature . . . . . . . . . . . . . . . . . . . JEDEC TO-220AB . +175oC


    Original     		RURP640CC, RURP650CC, RURP660CC O-220AB 175oC RURP660CC RURP640CC RURP650CC PDF

    RURP640CC

    Abstract: RURP650CC RURP660CC FAIRCHILD to220ab package
    Text: RURP640CC, RURP650CC, RURP660CC 6A, 400V - 600V Ultrafast Dual Diodes January 2002 Features Package • Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . . <55ns • Operating Temperature . . . . . . . . . . . . . . . . . . . JEDEC TO-220AB . +175oC


    Original     		RURP640CC, RURP650CC, RURP660CC O-220AB 175oC RURP660CC RURP640CC RURP650CC FAIRCHILD to220ab package PDF

    TB1060

    Abstract: RURP640CC RURP650CC RURP660CC TB151
    Text: RURP640CC, RURP650CC, RURP660CC 6A, 400V - 600V Ultrafast Dual Diodes April 1995 Features Package • Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . . <55ns JEDEC TO-220AB o • Operating Temperature . . . . . . . . . . . . . . . . . . . . +175 C


    Original     		RURP640CC, RURP650CC, RURP660CC O-220AB RURP660CC 175oC TB1060 RURP640CC RURP650CC TB151 PDF

    Untitled

    Abstract: No abstract text available
    Text: KSM6N40C/KSMF6N40C 400V N-Channel MOSFET TO-220 TO-220F Features • • • • • • 6A, 400V, RDS on = 1.0 Ω @VGS = 10 V Low gate charge ( typical 16nC) Low Crss ( typical 15pF) Fast switching 100% avalanche tested Improved dv/dt capability General Description


    Original     		KSM6N40C/KSMF6N40C O-220 O-220F 54TYP 00x45Â PDF

    2SC3083

    Abstract: No abstract text available
    Text: Ordering number:EN947B NPN Triple Diffused Planar Silicon Transistor 2SC3083 400V/6A Switching Regulator Applications Features Package Dimensions • High breakdown voltage VCBO≥500V . · Fast switching speed. · Wide ASO. unit:mm 2022A [2SC3083] 1 : Base


    Original     		EN947B 2SC3083 00V/6A VCBO500V) 2SC3083] PW300 Cycle10% 2SC3083 PDF

    Untitled

    Abstract: No abstract text available
    Text: Ordering number:ENN947B NPN Triple Diffused Planar Silicon Transistor 2SC3083 400V/6A Switching Regulator Applications Features Package Dimensions • High breakdown voltage VCBO≥500V . · Fast switching speed. · Wide ASO. unit:mm 2022A [2SC3083] 15.6 14.0


    Original     		ENN947B 2SC3083 00V/6A VCBO500V) 2SC3083] PW300 Cycle10% PDF

    2SC3083

    Abstract: ITR05305 ITR05306 ITR05307 ITR05308 ITR05309
    Text: Ordering number:EN947B NPN Triple Diffused Planar Silicon Transistor 2SC3083 400V/6A Switching Regulator Applications Features Package Dimensions • High breakdown voltage VCBO≥500V . · Fast switching speed. · Wide ASO. unit:mm 2022A [2SC3083] 15.6 14.0


    Original     		EN947B 2SC3083 00V/6A VCBO500V) 2SC3083] 2SC3083 ITR05305 ITR05306 ITR05307 ITR05308 ITR05309 PDF

    transistor IC 12A 400v

    Abstract: 400v 6a transistor 400V 100MA NPN TV power transistor datasheet BU408D HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU408D DESCRIPTION •High Voltage: VCEV= 400V Min ·Fast Switching Speed: tf= 0.5 s(Max) ·Low Saturation Voltage: VCE(sat)= 1.0V(Max)@ IC= 6A APPLICATIONS ·Designed for use in horizontal deflection output stages


    Original     		BU408D 100mA transistor IC 12A 400v 400v 6a transistor 400V 100MA NPN TV power transistor datasheet BU408D HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR PDF

    svd730

    Abstract: SVD730F svd730t N-channel enhancement 200V 60A
    Text: SVD730T/SVD730F 6A, 400V N-CHANNEL MOSFET GENERAL DESCRIPTION These N-channel enhancement mode power field effect transistors are produced using Silan’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching


    Original     		SVD730T/SVD730F SVD730T O-220-3L 50Unit/Tube O-220F-3L svd730 SVD730F svd730t N-channel enhancement 200V 60A PDF

    g6n50e

    Abstract: No abstract text available
    Text: HGTD6N40E1, HGTD6N40E1S, HGTD6N50E1, HGTD6N50E1S HARRIS S E M I C O N D U C T O R 6A, 400V and 500V N-Channel IGBTs March 1997 Features Packages HGTD6N40E1, HGTD6N50E1 JEDEC TO-251AA • 6A, 400V and 500V • V ce ON : 2.5V Max. EMITTER • t fall:1-°Hs


    OCR Scan     		HGTD6N40E1, HGTD6N40E1S, HGTD6N50E1, HGTD6N50E1S HGTD6N50E1 O-251AA O-252AA g6n50e PDF

    EM- 534 motor

    Abstract: 6N50E 840CV GE 639 g6n50e
    Text: m HGTD6N40E1, HGTD6N40E1S, HGTD6N50E1, HGTD6N50E1S H A FR FU S ia j sem iconductor 6A, 400V and 500V N-Channel IGBTs April 1995 Features Packages H G T D 6N 40 E 1, H G TD 6N50E1 • 6A, 400V and 500V J E D E C T O -251A A ’ ^CE ON ’ 2-5V Max. EMITTER


    OCR Scan     		HGTD6N40E1, HGTD6N40E1S, HGTD6N50E1, HGTD6N50E1S 6N50E1 -251A 40E1S -252A EM- 534 motor 6N50E 840CV GE 639 g6n50e PDF

    g6n50e

    Abstract: HGTD6N50E1S G6N40E G6N50 flange terminal 25C1 HGTD6N40E1 HGTD6N40E1S HGTD6N50E1
    Text: HGTD6N40E1, HGTD6N40E1S, HGTD6N50E1, HGTD6N50E1S H A R R IS S E M I C O N D U C T O R 6A, 400V and 500V N-Channel IGBTs March 1997 Packages Features HGTD6N40E1, HGTD6N50E1 JEDEC TO-251AA • 6A, 400V and 500V • V ce ON : 2.5V Max. EM ITTER • T f a l l 1 1 -0 ^3


    OCR Scan     		HGTD6N40E1, HGTD6N40E1S, HGTD6N50E1, HGTD6N50E1S HGTD6N50E1S HGTD6N40E1 O-251AA g6n50e G6N40E G6N50 flange terminal 25C1 HGTD6N40E1S HGTD6N50E1 PDF

    G6N50E1D

    Abstract: G6N50E1 G6N50 HGTP6N50E1D 400v 6a transistor
    Text: HGTP6N40E1D, HGTP6N50E1D d ì H a r r is \MÌ S E M I C O N D U C T O R 6A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes Aprii 1995 Features Package JEDEC TO-220AB • 6A, 400V and 500V EMITTER • Latch Free Operation COLLECTOR GATE • T f a l l : < 1.0|iS


    OCR Scan     		HGTP6N40E1D, HGTP6N50E1D O-220AB 50iiH G6N50E1D G6N50E1 G6N50 HGTP6N50E1D 400v 6a transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: [O rderin g number-. EN 947B 2SC3083 N0.947B NPN Triple Diffused Planar Silicon Transistor 400V/6A Switching Regulator Applications Features . High breakdown voltage VCB0£500V . Fast switching speed. . Wide ASO. Absolute Maxiaua Ratings at Ta=25°C Collector-to-Base Voltage


    OCR Scan     		2SC3083 00V/6A 300fis, 2SC3083 PDF