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    400V TRANSISTOR Search Results

    400V TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    RJP4013ASP-00#J5 Renesas Electronics Corporation IGBT 400V 150A SOP-8 Visit Renesas Electronics Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    400V TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CEB740N

    Abstract: CEF740N CEI740N CEP740N
    Text: CEP740N/CEB740N CEI740N/CEF740N N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS ON ID @VGS CEP740N 400V 550mΩ 10A 10V CEB740N 400V 550mΩ 10A 10V CEI740N 400V 550mΩ 10A CEF740N 400V 550mΩ 10A 10V e 10V D Super high dense cell design for extremely low RDS(ON).


    Original     		PDF CEP740N/CEB740N CEI740N/CEF740N CEP740N CEB740N CEI740N CEF740N O-220 O-263 O-262 O-220F CEB740N CEF740N CEI740N CEP740N

    CEP740A

    Abstract: CEB740A CEF740A CEI740A S83-5
    Text: CEP740A/CEB740A CEI740A/CEF740A N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS ON ID @VGS CEP740A 400V 650mΩ 10A 10V CEB740A 400V 650mΩ 10A 10V CEI740A 400V 650mΩ 10A 10V CEF740A 400V 650mΩ 10A e 10V D Super high dense cell design for extremely low RDS(ON).


    Original     		PDF CEP740A/CEB740A CEI740A/CEF740A CEP740A CEB740A CEI740A CEF740A O-220 O-263 O-262 O-220F CEP740A CEB740A CEF740A CEI740A S83-5

    CEP740A

    Abstract: CEB740A CEF740A CEI740A
    Text: CEP740A/CEB740A CEI740A/CEF740A N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS ON ID @VGS CEP740A 400V 650mΩ 10A 10V CEB740A 400V 650mΩ 10A 10V CEI740A 400V 650mΩ 10A 10V CEF740A 400V 650mΩ 10A e 10V D Super high dense cell design for extremely low RDS(ON).


    Original     		PDF CEP740A/CEB740A CEI740A/CEF740A CEP740A CEB740A CEI740A CEF740A O-220 O-263 O-262 O-220F CEP740A CEB740A CEF740A CEI740A

    cep730g

    Abstract: No abstract text available
    Text: CEP730G/CEB730G CEF730G N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type VDSS RDS ON ID @VGS CEP730G 400V 1Ω 5.5A 10V CEB730G 400V 1Ω 5.5A 10V CEF730G 400V 1Ω 5.5A e 10V D Super high dense cell design for extremely low RDS(ON).


    Original     		PDF CEP730G/CEB730G CEF730G CEP730G CEB730G O-263 O-220 O-220F O-220/263 cep730g

    CEB740N

    Abstract: CEF740N CEP740N
    Text: CEP740N/CEB740N CEF740N N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type VDSS RDS ON ID @VGS CEP740N 400V 550mΩ 10A 10V CEB740N 400V 550mΩ 10A CEF740N 400V 550mΩ 10A 10V 10V e D Super high dense cell design for extremely low RDS(ON).


    Original     		PDF CEP740N/CEB740N CEF740N CEP740N CEB740N O-263 O-220 O-220F O-220/263 CEB740N CEF740N CEP740N

    cep740g

    Abstract: CEB740G cef 473
    Text: CEP740G/CEB740G CEF740G N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type VDSS RDS ON ID @VGS CEP740G 400V 0.55Ω 10A 10V CEB740G 400V 0.55Ω 10A 10V CEF740G 400V 0.55Ω 10A e 10V D Super high dense cell design for extremely low RDS(ON).


    Original     		PDF CEP740G/CEB740G CEF740G CEP740G CEB740G O-263 O-220 O-220F O-220/263 cep740g CEB740G cef 473

    AN7254

    Abstract: RFM12N35 RFM12N40
    Text: [ /Title RFM12 N35, RFM12 N40 /Subject (12A, 350V and 400V, 0.500 Ohm, N-Channel Power MOSFETs) /Author () /Keywords (12A, 350V and 400V, 0.500 Ohm, N-Channel Power MOSFETs) /Creator () /DOCIN RFM12N35, RFM12N40 Semiconductor 12A, 350V and 400V, 0.500 Ohm,


    Original     		PDF RFM12 RFM12N35, RFM12N40 AN7254 RFM12N35 RFM12N40

    2SD2568

    Abstract: 2sd25
    Text: 2SD2568 Transistors Power Transistor 400V,0.5A 2SD2568 !Features 1) High breakdown voltage.(BVCEO=400V) !Absolute maximum ratings (Ta = 25°C) Parameter Symbol Collector-base voltage Collector-emitter voltage VCBO VCEO Emitter-base voltage Collector current


    Original     		PDF 2SD2568 100mA V/50mA -50mA 10MHz 2SD2568 2sd25

    Untitled

    Abstract: No abstract text available
    Text: 2SD2568 Transistors Power Transistor 400V,0.5A 2SD2568 !Features 1) High breakdown voltage.(BVCEO=400V) !Absolute maximum ratings (Ta = 25°C) Parameter Symbol Collector-base voltage Collector-emitter voltage VCBO VCEO Emitter-base voltage Collector current


    Original     		PDF 2SD2568 2SD2568

    Untitled

    Abstract: No abstract text available
    Text: NTE2530 NPN & NTE2531 (PNP) Silicon Complementary Transistors High Voltage Driver Features: D High Current Capacity: IC = 2A D High Breakdown Voltage: VCEO = 400V Min Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V


    Original     		PDF NTE2530 NTE2531 10IB1 10IB2 500mA,

    TRANSISTOR MARKING 1d6

    Abstract: No abstract text available
    Text: ZXTP08400BFF 400V, SOT23F, PNP medium power high voltage transistor Summary; BVCEO > -400V BVECO > -6V IC cont = -0.2A VCE(sat) < 220mV @ 100mA PD = 1.5W Complementary part number ZXTN08400BFF Description C This PNP transistor has been designed for applications requiring high


    Original     		PDF ZXTP08400BFF OT23F, -400V 220mV 100mA ZXTN08400BFF OT23F ZXTP08400BFFTA D-81541 TRANSISTOR MARKING 1d6

    pnp 400v 4a

    Abstract: PNP 400V NTE2530 NTE2531 POWER TRANSISTORS 10A 400v pnp NTE253
    Text: NTE2530 NPN & NTE2531 (PNP) Silicon Complementary Transistors High Voltage Driver Features: D High Current Capacity: IC = 2A D High Breakdown Voltage: VCEO = 400V Min Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V


    Original     		PDF NTE2530 NTE2531 10IB1 -10IB2 500mA, pnp 400v 4a PNP 400V NTE2530 NTE2531 POWER TRANSISTORS 10A 400v pnp NTE253

    3n40

    Abstract: No abstract text available
    Text: TM UniFET FDD3N40 / FDU3N40 400V N-Channel MOSFET Features Description • 2A, 400V, RDS on = 3.4Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		PDF FDD3N40 FDU3N40 FDU3N40 FDD3N40TF FDD3N40TM 3n40

    Untitled

    Abstract: No abstract text available
    Text: FRFET TM FQP6N40CF/FQPF6N40CF 400V N-Channel MOSFET Features Description • 6A, 400V, RDS on = 1.1 Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		PDF FQP6N40CF/FQPF6N40CF

    Zetex T 705

    Abstract: TRANSISTOR MARKING 1d6 TS16949 ZXTN08400BFF ZXTP08400BFF ZXTP08400BFFTA
    Text: ZXTP08400BFF 400V, SOT23F, PNP medium power high voltage transistor Summary; BVCEO > -400V BVECO > -6V IC cont = -0.2A VCE(sat) < 220mV @ 100mA PD = 1.5W Complementary part number ZXTN08400BFF Description C This PNP transistor has been designed for applications requiring high


    Original     		PDF ZXTP08400BFF OT23F, -400V 220mV 100mA ZXTN08400BFF OT23F ZXTP08400BFFTA D-81541 Zetex T 705 TRANSISTOR MARKING 1d6 TS16949 ZXTN08400BFF ZXTP08400BFF ZXTP08400BFFTA

    FDD3N40TM

    Abstract: FDD3N40 FDD3N40TF FDU3N40 FDU3N40TU
    Text: TM UniFET FDD3N40 / FDU3N40 400V N-Channel MOSFET Features Description • 2A, 400V, RDS on = 3.4Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		PDF FDD3N40 FDU3N40 FDD3N40TM FDD3N40TF FDU3N40 FDU3N40TU

    2SD2568

    Abstract: No abstract text available
    Text: 2SD2568 Transistors Power Transistor 400V, 0.5A 2SD2568 zFeatures 1) High breakdown voltage.(BVCEO=400V) zAbsolute maximum ratings (Ta=25°C) Symbol Limits Unit Collector-base voltage Parameter VCBO 400 V Collector-emitter voltage VCEO 400 V Emitter-base voltage


    Original     		PDF 2SD2568 2SD2568

    Untitled

    Abstract: No abstract text available
    Text: QFET FQP11N40C/FQPF11N40C 400V N-Channel MOSFET Features Description • 10.5 A, 400V, RDS on = 0.5 Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		PDF FQP11N40C/FQPF11N40C FQP11N40C/FQPF11N40C

    2SC4620

    Abstract: 2SA1759 2SC4505 T100 pw 10m pw10m
    Text: 2SC4505 / 2SC4620 Transistors Power Transistor 400V, 0.1A 2SC4505 / 2SC4620 zExternal dimensions (Unit : mm) MPT3 0.5 4.5 1.6 1.5 2.5 4.0 zFeatures 1) High breakdown voltage. (BVCEO = 400V) 2) Low saturation voltage, typically VCE (sat)= 0.05V at IC / IB = 10mA / 1mA.


    Original     		PDF 2SC4505 2SC4620 100mA. 2SA1759. 2SC4505 65Max. 2SC4620 2SA1759 T100 pw 10m pw10m

    TS16949

    Abstract: ZXTN08400BFF ZXTP08400BFF ZXTP08400BFFTA
    Text: ZXTP08400BFF 400V, SOT23F, PNP medium power high voltage transistor Summary; BVCEO > -400V BVECO > -6V IC cont = -0.2A VCE(sat) < 220mV @ 100mA PD = 1.5W Complementary part number ZXTN08400BFF Description C This PNP transistor has been designed for applications requiring high


    Original     		PDF ZXTP08400BFF OT23F, -400V 220mV 100mA ZXTN08400BFF OT23F ZXTP08400BFFTA D-81541 TS16949 ZXTN08400BFF ZXTP08400BFF ZXTP08400BFFTA

    FQPF Series

    Abstract: MOSFET 400V FQP6N40CF FQPF6N40CF N-Channel mosfet 400v to220
    Text: FRFET TM FQP6N40CF/FQPF6N40CF 400V N-Channel MOSFET Features Description • 6A, 400V, RDS on = 1.1 Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		PDF FQP6N40CF/FQPF6N40CF FQP6N40CF/FQPF6N40CF FQPF Series MOSFET 400V FQP6N40CF FQPF6N40CF N-Channel mosfet 400v to220

    FQPF4N50C

    Abstract: FQP11N40C FQP3N50C FQPF11N40C FQPF3N50C FQP4N50C
    Text: QFET FQP11N40C/FQPF11N40C 400V N-Channel MOSFET Features Description • 10.5 A, 400V, RDS on = 0.5 : @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		PDF FQP11N40C/FQPF11N40C FQPF4N50C FQP11N40C FQP3N50C FQPF11N40C FQPF3N50C FQP4N50C

    Untitled

    Abstract: No abstract text available
    Text: FRFET TM FQP6N40CF/FQPF6N40CF 400V N-Channel MOSFET Features Description • 6A, 400V, RDS on = 1.1 Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		PDF FQP6N40CF/FQPF6N40CF FQP6N40CF/FQPF6N40CF

    MOSFET 400V TO-220

    Abstract: FQP11N40C fqpf11n40c N-Channel mosfet driver 400v to220 MOSFET 400V FQP3N50C FQPF3N50C N-Channel mosfet 400v to220
    Text: FQP11N40C/FQPF11N40C 400V N-Channel MOSFET Features Description • 10.5 A, 400V, RDS on = 0.5 Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		PDF FQP11N40C/FQPF11N40C FQP11N40C/FQPF11N40C MOSFET 400V TO-220 FQP11N40C fqpf11n40c N-Channel mosfet driver 400v to220 MOSFET 400V FQP3N50C FQPF3N50C N-Channel mosfet 400v to220