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    MGFC40V7785

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G FC 40V7785 7 .7 — 8.5GH z BAND 10W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G F C 4 0 V 7 7 8 5 is an internally impedance-matched GaAs power F E T especially designed fo r use in 7 . 7 —8 . 5 G H z band am plifiers. The herm etically sealed metal-ceramic


    OCR Scan     		MGFC40V7785 MGFC40V7785 ltem-01: PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G FC 40V 7785B •b e U 7 .7 —8.5G H z BAND 1 0 W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G F C 4 0 V 7 7 8 5 B is an internally im p e d a n c e-m a tc h e d GaAs pow er F E T especially designed fo r use in 7 . 7 — 8 . 5


    OCR Scan     		7785B PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G FC 40V77 8 5 A PREU ate 7 .7 —8 .5 G H z BAND 1 0 W INTERNA LLY M ATCHED GaAs FE T Som eP*' DESCRIPTION T h e M G F C 4 0 V 7 7 8 5 A is an internally im p e d a n c e -m a tc h e d GaAs pow er F E T especially designed fo r use in 7 . 7 — 8 . 5


    OCR Scan     		40V77 PDF