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    40AT Search Results

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    Part ECAD Model Manufacturer Description Download Buy
    74FCT240ATQG Renesas Electronics Corporation Octal Buffer/Line Driver Visit Renesas Electronics Corporation
    74FCT162240ATPA Renesas Electronics Corporation 16-BIT BUFFER/LINE DRIVER Visit Renesas Electronics Corporation
    74FCT16240ATPA Renesas Electronics Corporation 16-BIT BUFFER/LINE DRIVER Visit Renesas Electronics Corporation
    74FCT2240ATQ8 Renesas Electronics Corporation 8 BIT BAL. DRV. OCTAL BUS Visit Renesas Electronics Corporation
    74FCT240ATPYG Renesas Electronics Corporation Octal Buffer/Line Driver Visit Renesas Electronics Corporation
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    40AT Price and Stock

    Toshiba America Electronic Components CRS30I40A(TE85L,QM

    DIODE SCHOTTKY 40V 3A SFLAT
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    DigiKey CRS30I40A(TE85L,QM Digi-Reel 4,107 1
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    CRS30I40A(TE85L,QM Cut Tape 4,107 1
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    CRS30I40A(TE85L,QM Reel 3,000 3,000
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    EBV Elektronik CRS30I40A(TE85L,QM 21 Weeks 3,000
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    Microchip Technology Inc 25LC640AT-I-MS

    IC EEPROM 64KBIT SPI 10MHZ 8MSOP
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    DigiKey 25LC640AT-I-MS Cut Tape 3,526 1
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    25LC640AT-I-MS Digi-Reel 3,526 1
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    25LC640AT-I-MS Reel 2,500 2,500
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    Microchip Technology Inc 25LC040AT-E-MC

    IC EEPROM 4KBIT SPI 10MHZ 8DFN
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    DigiKey 25LC040AT-E-MC Cut Tape 3,290 1
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    25LC040AT-E-MC Digi-Reel 3,290 1
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    Micro Commercial Components SMCJ1.5KE440A-TP

    TVS DIODE 376VWM 602VC DO214AB
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    DigiKey SMCJ1.5KE440A-TP Reel 3,000 3,000
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    YAGEO Corporation SMBJ40A-TR7

    TVS DIODE 40VWM 64.5VC DO214AA
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    DigiKey SMBJ40A-TR7 Digi-Reel 500 1
    • 1 $0.43
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    SMBJ40A-TR7 Reel 500 500
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    SMBJ40A-TR7 Cut Tape 500 1
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    40AT Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    7905

    Abstract: 7905 datasheet description of transistor 7905 7905 application note 7905 pin details MA 7905 BUK7105-40ATE BUK7905-40ATE
    Text: BUK71/7905-40ATE TrenchPLUS standard level FET Rev. 01 — 20 August 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring both very low on-state resistance and


    Original     		BUK71/7905-40ATE BUK7105-40ATE OT426 BUK7905-40ATE OT263B O-220) 7905 7905 datasheet description of transistor 7905 7905 application note 7905 pin details MA 7905 PDF

    Untitled

    Abstract: No abstract text available
    Text: BUK7105-40ATE N-channel TrenchPLUS standard level FET Rev. 02 — 10 February 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. The devices include TrenchPLUS diodes for


    Original     		BUK7105-40ATE BUK7105-40ATE PDF

    BUK7907-40ATC

    Abstract: No abstract text available
    Text: BUK7907-40ATC N-channel TrenchPLUS standard level FET Rev. 02 — 10 February 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. The devices include TrenchPLUS diodes for


    Original     		BUK7907-40ATC BUK7907-40ATC PDF

    BUK9907-40ATC

    Abstract: MQ101
    Text: BUK9907-40ATC TrenchPLUS logic level FET Rev. 01 — 28 January 2002 Product data M3D745 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance and TrenchPLUS


    Original     		BUK9907-40ATC M3D745 BUK9907-40ATC OT263B. MQ101 PDF

    BUK9107-40ATC

    Abstract: MBL306
    Text: BUK9107-40ATC TrenchPLUS logic level FET Rev. 03 — 22 January 2002 Product data M3D322 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance and TrenchPLUS


    Original     		BUK9107-40ATC M3D322 BUK9107-40ATC OT426 MBL306 PDF

    M2S56D20

    Abstract: M2S56D20ATP M2S56D30ATP M2S56D40ATP
    Text: DDR SDRAM Rev.1.2 MITSUBISHI LSIs M2S56D20/ 30/ 40ATP Jun. '01 Preliminary 256M Double Data Rate Synchronous DRAM PRELIMINARY Some of contents are subject to change without notice. DESCRIPTION M2S56D20ATP is a 4-bank x 16,777,216-word x 4-bit, M2S56D30ATP is a 4-bank x 8,388,608-word x 8-bit,


    Original     		M2S56D20/ 40ATP M2S56D20ATP 216-word M2S56D30ATP 608-word M2S56D40ATP 304-word 16-bit, M2S56D20/30/40ATP M2S56D20 PDF

    M2S56D20

    Abstract: M2S56D20ATP M2S56D30ATP
    Text: MITSUBISHI LSIs DDR SDRAM Rev.1.44 M2S56D20/ 30/ 40ATP -75AL, -75A, -75L, -75, -10L, -10 M2S56D20/ 30/ 40AKT -75AL, -75A, -75L, -75, -10L, -10 Mar. '02 256M Double Data Rate Synchronous DRAM Contents are subject to change without notice. DESCRIPTION M2S56D20ATP / AKT is a 4-bank x 16777216-word x 4-bit,


    Original     		M2S56D20/ 40ATP -75AL, 40AKT M2S56D20ATP 16777216-word M2S56D30ATP 8388608-word M2S56D20 PDF

    Untitled

    Abstract: No abstract text available
    Text: BUK9107-40ATC N-channel TrenchPLUS logic level FET Rev. 04 — 16 February 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. The devices include TrenchPLUS diodes for


    Original     		BUK9107-40ATC BUK9107-40ATC PDF

    Untitled

    Abstract: No abstract text available
    Text: BUK7907-40ATC N-channel TrenchPLUS standard level FET Rev. 02 — 10 February 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. The devices include TrenchPLUS diodes for


    Original     		BUK7907-40ATC BUK7907-40ATC PDF

    Untitled

    Abstract: No abstract text available
    Text: Sparkle Power Inc. A Leading Power Supply manufacturer Web site: www.sparklepower.com FSP200-40AT I221 200 Watts Flex AT Switching Power Supply Features Specification • • High efficiency and reliability • Internal 12V DC fan included • Noise Killer (Thermal fan speed control function)


    Original     		FSP200-40AT 120mV PDF

    BUK9107-40ATC

    Abstract: C2532
    Text: BUK9107-40ATC N-channel TrenchPLUS logic level FET Rev. 04 — 16 February 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. The devices include TrenchPLUS diodes for


    Original     		BUK9107-40ATC BUK9107-40ATC C2532 PDF

    09874

    Abstract: No abstract text available
    Text: BUK71/7907-40ATC TrenchPLUS standard level FET Rev. 01 — 9 August 2002 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance, TrenchPLUS


    Original     		BUK71/7907-40ATC BUK7107-40ATC OT426 BUK7907-40ATC OT263B O-220AB) 09874 PDF

    Untitled

    Abstract: No abstract text available
    Text: BUK7107-40ATC N-channel TrenchPLUS standard level FET Rev. 02 — 6 February 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. The devices include TrenchPLUS diodes for


    Original     		BUK7107-40ATC BUK7107-40ATC PDF

    Untitled

    Abstract: No abstract text available
    Text: BUK7905-40ATE N-channel TrenchPLUS standard level FET Rev. 02 — 10 February 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. The devices include TrenchPLUS diodes for


    Original     		BUK7905-40ATE BUK7905-40ATE PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI LSIs DDR SDRAM Rev.1.43 M2S56D20/ 30/ 40ATP -75AL, -75A, -75L, -75, -10L, -10 M2S56D20/ 30/ 40AKT -75AL, -75A, -75L, -75, -10L, -10 Jan. '01 256M Double Data Rate Synchronous DRAM Contents are subject to change without notice. DESCRIPTION M2S56D20ATP / AKT is a 4-bank x 16777216-word x 4-bit,


    Original     		M2S56D20/ 40ATP -75AL, 40AKT M2S56D20ATP 16777216-word M2S56D30ATP 8388608-word PDF

    Untitled

    Abstract: No abstract text available
    Text: Transistors IC SMD Type TrenchPLUS standard level FET KUK7105-40ATE 1 .2 7 -0+ 0.1.1 TO-263 Features Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 Integrated temperature sensor 0.1max +0.1 1.27-0.1 5 .2 8 -0+ 0.2.2 Standard level compatible. +0.1 0.81-0.1 2.54 2.54


    Original     		KUK7105-40ATE O-263 PDF

    M2S56D20

    Abstract: M2S56D20ATP M2S56D30ATP M2S56D40ATP
    Text: DDR SDRAM E0338M10 Ver.1.0 (Previous Rev.1.54E) Jan. '03 CP(K) M2S56D20/ 30/ 40ATP M2S56D20/ 30/ 40AKT 256M Double Data Rate Synchronous DRAM DESCRIPTION M2S56D20ATP / AKT is a 4-bank x 16777216-word x 4-bit, M2S56D30ATP / AKT is a 4-bank x 8388608-word x 8-bit,


    Original     		E0338M10 M2S56D20/ 40ATP 40AKT M2S56D20ATP 16777216-word M2S56D30ATP 8388608-word M2S56D40ATP/ M2S56D20 M2S56D40ATP PDF

    Untitled

    Abstract: No abstract text available
    Text: BUK9907-40ATC N-channel TrenchPLUS logic level FET Rev. 02 — 16 February 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. The devices include TrenchPLUS diodes for


    Original     		BUK9907-40ATC BUK9907-40ATC PDF

    M2S56D20

    Abstract: M2S56D20ATP M2S56D30ATP M2S56D40ATP
    Text: DDR SDRAM E0338M10 Ver.1.0 (Previous Rev.1.54E) Jan. '03 CP(K) M2S56D20/ 30/ 40ATP M2S56D20/ 30/ 40AKT 256M Double Data Rate Synchronous DRAM DESCRIPTION M2S56D20ATP / AKT is a 4-bank x 16777216-word x 4-bit, M2S56D30ATP / AKT is a 4-bank x 8388608-word x 8-bit,


    Original     		E0338M10 M2S56D20/ 40ATP 40AKT M2S56D20ATP 16777216-word M2S56D30ATP 8388608-word M2S56D40ATP/ M2S56D20 M2S56D40ATP PDF

    M2S28D20

    Abstract: M2S28D20ATP M2S28D30ATP M2S28D40ATP
    Text: MITSUBISHI LSIs DDR SDRAM Rev.0.1 M2S28D20/ 30/ 40ATP Jun,'00 Preliminary 128M Double Data Rate Synchronous DRAM PRELIMINARY Some of contents are subject to change without notice. DESCRIPTION M2S28D20ATP is a 4-bank x 8388608-word x 4-bit, M2S28D30ATP is a 4-bank x 4194304-word x 8-bit,


    Original     		M2S28D20/ 40ATP M2S28D20ATP 8388608-word M2S28D30ATP 4194304-word M2S28D40ATP 2097152-word 16-bit, M2S28D20/30/40ATP M2S28D20 PDF

    BUK7107-40ATC

    Abstract: No abstract text available
    Text: BUK7107-40ATC N-channel TrenchPLUS standard level FET Rev. 02 — 6 February 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. The devices include TrenchPLUS diodes for


    Original     		BUK7107-40ATC BUK7107-40ATC PDF

    BUK7905-40ATE

    Abstract: No abstract text available
    Text: BUK7905-40ATE N-channel TrenchPLUS standard level FET Rev. 02 — 10 February 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. The devices include TrenchPLUS diodes for


    Original     		BUK7905-40ATE BUK7905-40ATE PDF

    BUK9907-40ATC

    Abstract: No abstract text available
    Text: BUK9907-40ATC N-channel TrenchPLUS logic level FET Rev. 02 — 16 February 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. The devices include TrenchPLUS diodes for


    Original     		BUK9907-40ATC BUK9907-40ATC PDF

    Untitled

    Abstract: No abstract text available
    Text: circuitassembly.com Driven by design TM IDT Ultra ATA66 S ocket with Internal G round B us SPECIFICATIONS Meets: SFF-8049 ENVIRONMENTAL Temperature Range: -55°C to +105°C MECHANICAL CA-40ATAS-CPin#20 Molded/no PT* 101 201 301 Pin#20 Open/with PT* 110


    OCR Scan     		ATA66 SFF-8049 UL94V-0 CA-40ATAS-CPin SR40ATAS CA-610191 PDF