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    40D1 DIODE Search Results

    40D1 DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    40D1 DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    54B4

    Abstract: ALC286 BA41-00814A 218S6ECLA21FG BA41-00812A 54-B4 RS600ME RC410 BG41 mx25l8005m2c-15g
    Text: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. Table of Contents Sheet 1. COVER Sheet 2-6. DIAGRAM Block/Power & ANNOTATIONS


    Original     		PDF 800MHz) RS600ME SB600 BA41-00806A BA41-00812A BA41-00814A TP18830 TP18831 TP18832 TP18833 54B4 ALC286 218S6ECLA21FG 54-B4 RS600ME RC410 BG41 mx25l8005m2c-15g

    DIODE 22B4

    Abstract: BA4602 ba41-00316a AR5212 MAP17-232 Q506 nvidia 7100 AR5211 27b1 diode geforce4
    Text: X10 DRAW Model Name PBA Name PCB Code Dev. Step Revision APPROVAL AQUILA MAIN BA92-01774A BA41-#####A SR 1.0 CHECK : : : : : CPU :P4-BANIAS Chip Set :MCH-M ODEM Remarks :TEMP AQUILA 7 Schematic Diagrams and PCB Silkscreen 7-1 MAIN BOARD 7-1-1 Schematic Diagrams


    Original     		PDF BA92-01774A BA41-# 400MHZ 512MBYTE 66MHZ MAP31 68ohm 3000mA 012ohm DIODE 22B4 BA4602 ba41-00316a AR5212 MAP17-232 Q506 nvidia 7100 AR5211 27b1 diode geforce4

    XC503

    Abstract: schematic diagram tv samsung AR5212 XC502 C568 ar5312 ZD5022 CT502 7S06 SOT23 d526 y
    Text: 7 Schematic Diagrams and PCB Silkscreen 7-1 MAIN BOARD 7-1-1 Schematic Diagrams X30 7-1 This Document can not be used without Samsung’s authorization. 7 Schematic Diagrams and PCB Silkscreen 7-1-1 a Main Board Schematic Sheet 2 of 42(Operation Block Diagram)


    Original     		PDF DiagraA-062 A17-01-B-002 A02-02-A-001 A04-01-A-047 A09-01-A-089 LTST-C150GKT, SLS-PGYE301-TM, OT-25) 12513WR-04A0, CIM10J121NES XC503 schematic diagram tv samsung AR5212 XC502 C568 ar5312 ZD5022 CT502 7S06 SOT23 d526 y

    ZD602

    Abstract: B628 ALC258 TP2121 BA41-00509A bd631 TP2274 zd601 S2R51 ati M22P
    Text: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. TABLE OF CONTENTS D FIRENZE C B CPU :Dothan533


    Original     		PDF TP1765 TP1714 TP1715 TP1716 TP1717 TP1718 TP1719 TP1720 TP1721 TP1722 ZD602 B628 ALC258 TP2121 BA41-00509A bd631 TP2274 zd601 S2R51 ati M22P

    ALC122

    Abstract: ZD602 ALC258 TP2121 B628 ZD601 TP728 smd code w14 tp2307 Socket AM2
    Text: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. TABLE OF CONTENTS D FIRENZE C CPU :Dothan533 Chip Set :ALVISO & ICH6-M


    Original     		PDF CONTROLLER62 TP1763 TP1764 TP1765 TP1714 TP1715 TP1716 TP1717 TP1718 TP1719 ALC122 ZD602 ALC258 TP2121 B628 ZD601 TP728 smd code w14 tp2307 Socket AM2

    74138 decoder

    Abstract: 74138 74138 3 to 8 decoder 40af interfacing 8051 4066 74138 logic circuit 75F003 AN3010 MT 7930 AS253X
    Text: sames SAN3010 APPLICATION NOTE SINGLE CHIP TELEPHONE INTERFACE FOR KEYBOARD ENTRY VIA uC 1 Scope This application note describes a simple interface for keyboard entry to the SA253x family via a Microcontroller. It also includes hardware description , flowchart and a software example based on the 80Cxx - family of


    Original     		PDF SAN3010 SA253x 80Cxx SA2531/2 74138 decoder 74138 74138 3 to 8 decoder 40af interfacing 8051 4066 74138 logic circuit 75F003 AN3010 MT 7930 AS253X

    ICS951461

    Abstract: CQ533 218s6ecla21fg R5538 by503 TP2205 TP2136 b536 AF45 DIODE SMD SS338A
    Text: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. D D Table of Contents 1. COVER 2-7. DIAGRAM & ANNOTATION


    Original     		PDF RS600M SB600 BA41-XXXXXA RS600 REV500 TP2123 TP2124 TP2125 ICS951461 CQ533 218s6ecla21fg R5538 by503 TP2205 TP2136 b536 AF45 DIODE SMD SS338A

    as2531

    Abstract: ic 74138 AN3010 IC 7490 pin configuration pin configuration of IC 74138 AS253X ic 7490 data sheet AS2532 74138 ic datasheet 7490 national
    Text: Application Note AN3010  Austria Mikro Systeme International AG Application Note AN3010: AS253x Single Chip Telephone Interface for keyboard entry via µC 1. Scope This application note describes a simple interface for keyboard entry to the AS253x family via a


    Original     		PDF AN3010 AN3010: AS253x AS253x 80Cxx AS2531. /An3010 as2531 ic 74138 AN3010 IC 7490 pin configuration pin configuration of IC 74138 ic 7490 data sheet AS2532 74138 ic datasheet 7490 national

    SS338A

    Abstract: Diode smd BD27 BD2430 cq521 18b2 diode BE513 3b506 HAINAN2 TP2041 B538
    Text: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. D D Table of Contents 1. COVER 2-7. DIAGRAM & ANNOTATION


    Original     		PDF RS600M SB600 BA41-XXXXXA RS600 REV500 TP2165 TP2123 TP2124 SS338A Diode smd BD27 BD2430 cq521 18b2 diode BE513 3b506 HAINAN2 TP2041 B538

    BA41-00808A

    Abstract: BA41-00807A samsung schematic ICS95461 TP2136 tp2116 hainan3 HU-1M2012-121JT BA41-00809A 2u42
    Text: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. D D Table of Contents HAINAN3_INT C CPU : Chip Set :


    Original     		PDF RS600M SB600 BA41-00807A BA41-00808A RS600 TP2656 REV500 TP2660 samsung schematic ICS95461 TP2136 tp2116 hainan3 HU-1M2012-121JT BA41-00809A 2u42

    54B2

    Abstract: HH-1M1608-600JT 20B3 diode tp807 TP889 hh-1m1608 RC410M IR 30D1 7E TP828 t9504
    Text: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. Table of Contents Sheet 1. COVER Sheet 2 - 7. DIAGRAM Block/Power & ANNOTATIONS


    Original     		PDF RC410MD SB450 BA41-00615A RC410MD Sheet18. Sheet19. Sheet20 TP682 TP685 TP686 54B2 HH-1M1608-600JT 20B3 diode tp807 TP889 hh-1m1608 RC410M IR 30D1 7E TP828 t9504

    BA41-00809A

    Abstract: HAINAN3_EXT BA41 HAINAN3 BA41-00810A 218s6ecla21fg RS600ME smd diode code ak12 SI2315BDS-T1 B502 samsung p28
    Text: 4 3 1 2 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. D D Table of Contents HAINAN3_EXT C 1. COVER 2-7. DIAGRAM & ANNOTATION


    Original     		PDF RS600 SB600 BA41-00809A BA41-00810A TP2123 TP2124 TP2125 TP2062 TP2063 HAINAN3_EXT BA41 HAINAN3 218s6ecla21fg RS600ME smd diode code ak12 SI2315BDS-T1 B502 samsung p28

    AES2501

    Abstract: ICS954305 TP960 C703 diode tp1332 VDD3310 TP950 33B3 diode DEBUG32 block diagram of intel 8254 chip
    Text: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. TABLE OF CONTENTS D FIRENZE-R C B CPU : Chip Set :


    Original     		PDF CONTROLLERP1311 TP1312 TP1313 TP1314 TP1251 TP1252 TP1253 TP1254 TP1255 TP1256 AES2501 ICS954305 TP960 C703 diode tp1332 VDD3310 TP950 33B3 diode DEBUG32 block diagram of intel 8254 chip

    db3 c918

    Abstract: TRANSISTOR 6b8 SMD Q88 apple ZENER Diode 12B2 2c213 diode zener 12a2 diode DB3 C531 bubba oscillator schematic smd transistor 6a1 U52 A4 apple
    Text: 8 6 7 PAGE 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 C B 1 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. D 2 3 4 5 REV 10/15/2004 CONTENTS


    Original     		PDF MPC7450 200PIN 1000BT SN74AUC1G04 SN74AUC1G08 ADT7460 KXM52 FAN2558 db3 c918 TRANSISTOR 6b8 SMD Q88 apple ZENER Diode 12B2 2c213 diode zener 12a2 diode DB3 C531 bubba oscillator schematic smd transistor 6a1 U52 A4 apple

    A14F diode

    Abstract: DIODE marking ES2D V352 DC "Transient Voltage Suppressor" diode A14A rg3j 005 SR1002 0010C 357D-01 1N2069
    Text: MURS220T3 Preferred Device Surface Mount Ultrafast Power Rectifiers Ideally suited for high voltage, high frequency rectification, or as free wheeling and protection diodes in surface mount applications where compact size and weight are critical to the system.


    Original     		PDF MURS220T3 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 A14F diode DIODE marking ES2D V352 DC "Transient Voltage Suppressor" diode A14A rg3j 005 SR1002 0010C 357D-01 1N2069

    equivalent components of diode 1N5399

    Abstract: diode ses5001 6A10 BL diode equivalent for fr302 diode equivalent components of diode her104 fe8b diode FE8D gi756 diode A14F diode MUR420 diode
    Text: MBR6045WT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected


    Original     		PDF MBR6045WT VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 equivalent components of diode 1N5399 diode ses5001 6A10 BL diode equivalent for fr302 diode equivalent components of diode her104 fe8b diode FE8D gi756 diode A14F diode MUR420 diode

    FE16B

    Abstract: mbr3045pt transistor FR102 SOD-123 1N4007 sod-123 BYV43-45 BYV19-45 MUR1660CT equivalent MUR460 BL FEP16DT 0032 mur420 equivalent
    Text: MBRP60035CTL Preferred Device POWERTAP II SWITCHMODE Power Rectifier The SWITCHMODE Power Rectifier uses the Schottky Barrier principle with a platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction —


    Original     		PDF MBRP60035CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 FE16B mbr3045pt transistor FR102 SOD-123 1N4007 sod-123 BYV43-45 BYV19-45 MUR1660CT equivalent MUR460 BL FEP16DT 0032 mur420 equivalent

    stpr16

    Abstract: MUR480E 340L-02 PK MUR 460 BV 202 0158 1N541 AK SOT23 STPS2045 SS33 SMB A14F diode
    Text: MURB1620CT Preferred Device SWITCHMODE Power Rectifier D2PAK Power Surface Mount Package Designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • • • •


    Original     		PDF MURB1620CT VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 stpr16 MUR480E 340L-02 PK MUR 460 BV 202 0158 1N541 AK SOT23 STPS2045 SS33 SMB A14F diode

    MR2835S equivalent

    Abstract: A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502
    Text: MBR6045PT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected


    Original     		PDF MBR6045PT VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 MR2835S equivalent A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502

    TP2801

    Abstract: smd diode PG 303 ALC287 Q5 LED mx25l8005m2c-15g SS338A 52A3 bluetooth schematic d47 samsung schematic SAMSUNG ELECTRONICS BA41
    Text: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. D D Table of Contents 1. COVER 2-7. DIAGRAM & ANNOTATION


    Original     		PDF BA41-00774A/00732A TP2740 TP2741 TP2751 TP2750 TP2749 TP2748 TP2747 TP2746 TP2745 TP2801 smd diode PG 303 ALC287 Q5 LED mx25l8005m2c-15g SS338A 52A3 bluetooth schematic d47 samsung schematic SAMSUNG ELECTRONICS BA41

    MUR1560 equivalent

    Abstract: 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent
    Text: MBRD835L Preferred Device SWITCHMODE Power Rectifier DPAK Surface Mount Package This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in


    Original     		PDF MBRD835L VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 MUR1560 equivalent 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent

    1n5822 trr

    Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
    Text: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay


    Original     		PDF MBRD1035CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 1n5822 trr A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50

    OZ 9983

    Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
    Text: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —


    Original     		PDF MBRB3030CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 OZ 9983 mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45

    transistor U1620R

    Abstract: fast recovery diode ses5001 MUR1620CT equivalent PK MUR 460 DIODE PK MUR 460 transistor mbr4045pt 1N2069 MBRD360 Fast Recovery Diode, 24 Amperes, 600 Volts, Button Type STPS20h100
    Text: MUR1620CTR Preferred Device SWITCHMODE Dual Ultrafast Power Rectifier . . . designed for use in negative switching power supplies, inverters and as free wheeling diodes. Also, used in conjunction with common cathode dual Ultrafast Rectifiers, makes a single phase full–wave


    Original     		PDF MUR1620CTR MUR1620CT VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 transistor U1620R fast recovery diode ses5001 MUR1620CT equivalent PK MUR 460 DIODE PK MUR 460 transistor mbr4045pt 1N2069 MBRD360 Fast Recovery Diode, 24 Amperes, 600 Volts, Button Type STPS20h100