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    Omega Engineering DY040-DBMAA1-2N/FF1

    1 1/2" WAFER STYLE VORTEX FLOWMETER - Bulk (Alt: DY040-DBMAA1-2N/FF)
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    Avnet Americas DY040-DBMAA1-2N/FF1 Bulk 1
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    Omega Engineering DY040-DBMBA1-2D/FF1

    1 1/2" ANSI CLASS 150 FLANGE VORTEX FLOWMETER W/DISPLAY - Bulk (Alt: DY040-DBMBA1-2D/FF)
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    Newark DY040-DBMBA1-2D/FF1 Bulk 1
    • 1 $4658.85
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    Omega Engineering DY040-DBMBA1-2N/FF1

    1 1/2" ANSI CLASS 150 FLANGE VORTEX FLOWMETER - Bulk (Alt: DY040-DBMBA1-2N/FF)
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    Avnet Americas DY040-DBMBA1-2N/FF1 Bulk 1
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    Omega Engineering DY040-DBMAA1-2D/FF1

    1 1/2" WAFER STYLE VORTEX FLOWMETER W/DISPLAY - Bulk (Alt: DY040-DBMAA1-2D/FF)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas DY040-DBMAA1-2D/FF1 Bulk 1
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    Newark DY040-DBMAA1-2D/FF1 Bulk 1
    • 1 $4031.55
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    Bimba Manufacturing Company LT-0240-DBM

    Thruster, Linear Thruster Cylinder ; 9/16in Bore ; Stroke: 40 in; Double Acting | Bimba LT-0240-DBM
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    RS LT-0240-DBM Bulk 5 Weeks 1
    • 1 $180.2
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    Find more 40DBM price and stock on Findchips.com

    40DBM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ZX47-40-S

    Abstract: ZX47-40 HN1173 ZX47-40LN-S zx4740s
    Text: Coaxial Power Detector 50Ω, -40dBm to +20dBm, ZX47-40+ ZX47-40LN+ 10 to 8000 MHz Features Maximum Ratings Operating Temperature Storage Temperature DC Power: Max. voltage Max. current Internal Power Dissipation Input Power • Low Noise DC Output for ZX47-40LN+,


    Original     		PDF -40dBm 20dBm, ZX47-40+ ZX47-40LN+ 20mVp-p 10MHz 120mA 27dBm HN1173 ZX47-40-S ZX47-40 HN1173 ZX47-40LN-S zx4740s

    FLL21E010MK

    Abstract: R104-5
    Text: FLL21E010MK High Voltage - High Power GaAs FET FEATURES ・High Voltage Operation : VDS=28V ・High Power : P1dB=40dBm typ. at f=2.17GHz ・High Gain: G1dB=14dB(typ.) at f=2.17GHz ・Broad Frequency Range : 2100 to 2200MHz ・Proven Reliability DESCRIPTION


    Original     		PDF FLL21E010MK 40dBm 17GHz 2200MHz FLL21E010MK R104-5

    NF 841

    Abstract: NF 831 035910
    Text: 821 - 851 MHz Wireless Amplifier QBS-359 Parameters Guaranteed Guaranteed 25°C • 821-851 MHz frequency band • NF typically < 1dB overtemp • High 3rd OIP typically 40dBm overtemp +5 to +55°C 821 - 851 44.0 ± 0.5 +0.5/-0.5 1.0 1.0 55 55 1.5:1 1.5:1


    Original     		PDF QBS-359 40dBm E52-19437) A91-0359 NF 841 NF 831 035910

    FLL21E010MK

    Abstract: r1045
    Text: FLL21E010MK High Voltage - High Power GaAs FET FEATURES ・High Voltage Operation : VDS=28V ・High Power : P1dB=40dBm typ. at f=2.17GHz ・High Gain: G1dB=14dB(typ.) at f=2.17GHz ・Broad Frequency Range : 2100 to 2200MHz ・Proven Reliability DESCRIPTION


    Original     		PDF FLL21E010MK 40dBm 17GHz 2200MHz FLL21E010MK r1045

    Untitled

    Abstract: No abstract text available
    Text: RFSW8000 RFSW8000 2.5V TO 5.0V, 5MHz TO 6500MHz 2.5V TO 5.0V, 5MHz TO 6500MHz 10W SPDT SWITCH Package: QFN, 2mm x 2mm x 0.55mm RF1 1 8 VRF1 GND 2 7 RFC GND 3 6 GND RF2 4 5 VRF2 Features  Single Voltage: 2.5V to 5.0V  40dBm P1dB  30dB Isolation at 2GHz


    Original     		PDF RFSW8000 6500MHz 40dBm 11a/n RFSW8000 4500MHz

    Untitled

    Abstract: No abstract text available
    Text: DRAFT RF3315 DRAFT RF3315Broadband High Linearity Amplifier BROADBAND HIGH LINEARITY AMPLIFIER GND RoHS Compliant & Pb-Free Product Package Style: SOT89 Features +40dBm Output IP3 „ 12.5dB Gain at 2.0GHz „ +23dBm P1dB „ „ 3.0dB Typical Noise Figure at


    Original     		PDF RF3315Broadband RF3315 300MHz 40dBm 23dBm DS050318

    GHzS11

    Abstract: 7824 TO-3 package
    Text: FLL21E040IK High Voltage - High Power GaAs FET FEATURES ・High Voltage Operation : VDS=28V ・High Gain: 15dB typ. at Pout=40dBm(Avg.) ・Broad Frequency Range : 2100 to 2200MHz ・Proven Reliability DESCRIPTION The FLL21E040IK is a high power GaAs FET that offers


    Original     		PDF FLL21E040IK 40dBm 2200MHz FLL21E040IK GHzS11 7824 TO-3 package

    WP-22

    Abstract: No abstract text available
    Text: Power Transistor RT240J / RT240 Product Features Application • Frequency Range = 50MHz ~ 6GHz • High Output Power P1dB = 40dBm Typ. @2.5GHz P3dB = 43dBm(Typ.)@2.5GHz • High Efficiency • High In/Out Impedance • High Power Gain G1dB = 18dB(Typ.)@900MHz


    Original     		PDF RT240J RT240 50MHz 40dBm 43dBm 900MHz IMT-2000 WP-22 WP-12 RT240

    AE617

    Abstract: 63dBc
    Text: E-pHEMT MMIC AE617 Product Features Application • Small size • 5MHz-1000MHz • Higher Gain • Higher linearity • SOIC-8 SMD Type package • Higher productivity • Lower manufacturing cost • Low Noise Figure • -63dBc CSO 79 Channels @ +40dBmV/ch


    Original     		PDF AE617 5MHz-1000MHz -63dBc 40dBmV/ch -65dBc OT-89 AE617 63dBc

    Untitled

    Abstract: No abstract text available
    Text: HE315 Broadband Amplifier BOWEI INTEGRATED CIRCUITS CO.,LTD. Typical Curves GAIN Ta=+25℃ Ta=+85℃ Ta= - 55℃ Gain dB 23 Features 21 Frequency Range: 1～110MHz(typ) l Gain: 20dB(typ) l IP3(out): 40dBm(typ) l l 27dBm Typical 1dB Compression Standard Hermetic Package SP-1A


    Original     		PDF HE315 110MHz 40dBm 27dBm 15dBm 3300pF. 30dBm 18VDC)

    microstrip

    Abstract: FPD750SOT89 Transistor Z14 RO4003 w20220 microstrip board
    Text: EB750SOT89AH FPD750SOT89 3.5GHz EVALUATION BOARD • • • • ¥ FEATURES 22dBm P1dB 14dB Gain 0.75dB Noise Figure 40dBm OIP3 Measured @ 11dBm per tone Bias VD = 5V, ID = 100mA DESCRIPTION AND APPLICATIONS This evaluation board is a single-ended, dual biased, power amplifier. It is reactively


    Original     		PDF EB750SOT89AH FPD750SOT89 22dBm 40dBm 11dBm 100mA FPD750SOT89. microstrip Transistor Z14 RO4003 w20220 microstrip board

    Untitled

    Abstract: No abstract text available
    Text: TGA2216-SM 0.1 – 3.0GHz 10W GaN Power Amplifier Applications • Commercial and military radar  Communications  Electronic Warfare QFN 5x5 mm 32L Product Features     Functional Block Diagram Frequency Range: 0.1 – 3.0GHz PSAT: >40dBm at PIN = 27dBm


    Original     		PDF TGA2216-SM 40dBm 27dBm 35dBm 360mA, TGA2216-SM

    Untitled

    Abstract: No abstract text available
    Text: TGA2583 2.7 – 3.7GHz 10W GaN Power Amplifier Applications • Commercial and military radar Product Features Functional Block Diagram      Frequency Range: 2.7 – 3.7GHz PSAT: 40dBm at 25V PAE: 54% Small Signal Gain: 33dB Bias: VD = 25-32V CW or Pulsed , IDQ = 175mA, VG


    Original     		PDF TGA2583 40dBm 5-32V 175mA, TGA2583 TQGaN25)

    ZX47-40LN-S

    Abstract: ZX47-40-S ZX47-40LN HN1173 ZX47-40 zx4740s
    Text: Coaxial ZX47-40+ ZX47-40LN+ Power Detector 50Ω, -40dBm to +20dBm, 10 to 8000 MHz Features Maximum Ratings Operating Temperature Storage Temperature DC Power: Max. voltage Max. current Internal Power Dissipation Input Power • Low Noise DC Output for ZX47-40LN+,


    Original     		PDF ZX47-40+ ZX47-40LN+ -40dBm 20dBm, 20mVp-p 10MHz 120mA 27dBm HN1173 ZX47-40LN-S ZX47-40-S ZX47-40LN HN1173 ZX47-40 zx4740s

    7824 TO-3 package

    Abstract: high power FET transistor s-parameters FLL21E040IK MA 7824. to-3 Eudyna Devices power amplifiers
    Text: FLL21E040IK High Voltage - High Power GaAs FET FEATURES ・High Voltage Operation : VDS=28V ・High Gain: 15dB typ. at Pout=40dBm(Avg.) ・Broad Frequency Range : 2100 to 2200MHz ・Proven Reliability DESCRIPTION The FLL21E040IK is a high power GaAs FET that offers high efficiency,


    Original     		PDF FLL21E040IK 40dBm 2200MHz FLL21E040IK 7824 TO-3 package high power FET transistor s-parameters MA 7824. to-3 Eudyna Devices power amplifiers

    RFM70

    Abstract: RFM70-S BEKEN RFM70-D wack PTX 631 PID diagram
    Text: RFM70 V1.0 Low Power High Performance 2.4 GHz GFSK Transceiver Module Features „ 2400-2483.5 MHz ISM band operation „ Support 1 and 2 Mbps air data rate „ Programmable output power -40dBm to 5dBm „ Low power consumption „ Variable payload length from 1 to 32bytes


    Original     		PDF RFM70 -40dBm 32bytes RFM70 RFM70-S BEKEN RFM70-D wack PTX 631 PID diagram

    RT550PD

    Abstract: RT550 RFHIC
    Text: Power Transistor RT550PD Product Features Application • High Output Power P1dB = 40dBm typ @2.3GHz • High Efficiency • High Power Gain G1dB = 10dB(typ) @2.3GHz • High Linearity • Hermetically sealed package • Competitive Price • Repeater • RF Sub-Systems


    Original     		PDF RT550PD 40dBm WP-22 RT550PD 300MHz RT550 RFHIC

    ZX47-40-S

    Abstract: No abstract text available
    Text: Coaxial Power Detector 50Ω - 40dBm to +20dBm, ZX47-40+ 10 - 8000 MHz Features Maximum Ratings O Operating Temperature Storage Temperature DC Power: Max. voltage Max. current Internal Power Dissipation Input Power O -40 C to 85 C -55OC to 100OC 5.7V 120mA


    Original     		PDF 40dBm 20dBm, -55OC 100OC 120mA 27dBm ZX47-40+ HN1173 ZX47-40-S+ ZX47-40-S

    ED-4701

    Abstract: FLL21E045IY
    Text: FLL21E045IY L,S-band High Power GaAs FET FEATURES ・High Voltage Operation VDS=28V GaAs FET ・High Gain: 15.5dB(typ.) at Pout=40dBm(Avg.) ・Broad Frequency Range : 2110 to 2170MHz ・High Reliability DESCRIPTION The FLL21E045IY is a high power GaAs FET that offers high efficiency,


    Original     		PDF FLL21E045IY 40dBm 2170MHz FLL21E045IY ED-4701

    QQ-S-698

    Abstract: 107D 204C 213B VS-25
    Text: im i VS-25 High Isolation RF Switch 50-500 MHz SP2T TYPICAL PERFORMANCE GUARANTEED MINIMUM PERFORMANCE DATA Impedence: 50 ohm s 3rd O rder Intercept Point: +40dBm min on condition Overall Frequency Range: 50 -5 0 0 M H 7 Frequency Bands in MHz: DESCRIPTION


    OCR Scan     		PDF VS-25is VS-25 40dBm MIL-STD-1276. MIL-G-45204. QQS-698. QQN-290. QQ-S-698 107D 204C 213B

    S9G73

    Abstract: No abstract text available
    Text: MI CROWAVE P O WE R GaAs FET MICROWAVE SEMICONDUCTOR T E C H N I C A L DATA S9G73 Pr I i m i n a r y •HIGH POWER «NON-MATCHED TYPE P1dB=40dBm ■ HIGH G AI N «HERMETICALLY SEALED PACKAGE G1dB=13dB 1. RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS Output Power at 1dB


    OCR Scan     		PDF S9G73 40dBm S9G73

    Untitled

    Abstract: No abstract text available
    Text: MI CROWAVE P O W E R GaAs FET MICROWAVE SEMICONDUCTOR T E C H N I C A L DATA S9G73 Pro I •HI GH POWER «NON-MATCHED imi nary TYPE P1dB=40dBm ■ HIGH GAI N «HERMETICALLY SEALED PACKAGE G1dB=13dB 1. RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS Output Power at 1dB


    OCR Scan     		PDF S9G73 40dBm

    Untitled

    Abstract: No abstract text available
    Text: RF AMPLIFIER MODEL TR9772 A v a ila b le as: Features Typical Intermodulation Performance at 2 5 0 C • ■ ■ ■ Second Order Harmonic Intercept Point +46dBm Typ. Second Order Two Tone Intercept Point.+40dBm (Typ.) Third Order Two Tone Intercept Point. +26dBm (Typ.)


    OCR Scan     		PDF TR9772 46dBm 40dBm 26dBm 1700-2400MHZ S11-------Deg ---------S21---------Mag S12--------Deg S22--------Deg

    Untitled

    Abstract: No abstract text available
    Text: ANALOG ► DEVICES Preliminary Technical 10W S P D T R F MEMS Switch with Integrated Control and Boost Circuitry ADG1939 la ta FEATURES GENERAL DESCRIPTION Wide frequency range: dc to 6 GHz High power handling capability: 10W/40dBm 0.2 dB insertion loss at 1 GHz


    OCR Scan     		PDF ADG1939 0W/40dBm ADG1939 65dBm 24-Lead CP-24-9)