DIGITAL VFD CLOCK IC
Abstract: 4116 ram ic vfd 5x7 vfd segment 4116 ram 7 segment digital display VFD MCU controller 38 PIN vacuum fluorescent display 6 digit VFD 7 segment display 10 pin
Text: MITSUBISHI 〈DIGITAL ASSP〉 MITSUBISHI 〈DIGITAL ASSP〉 M66004SP/FP M66004SP/FP 16-DIGIT 5X7-SEGMENT VFD CONTROLLER 16-DIGIT 5x7-SEGMENT VFD CONTROLLER DESCRIPTION The M66004 is a 16-digit 5×7-segment vacuum fluorescent display VFD controller using the silicon gate CMOS technology.
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M66004SP/FP
16-DIGIT
M66004
JIS-C-6220
RAM12
DIGITAL VFD CLOCK IC
4116 ram ic
vfd 5x7
vfd segment
4116 ram
7 segment digital display
VFD MCU controller
38 PIN vacuum fluorescent display
6 digit VFD
7 segment display 10 pin
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4116 ram ic
Abstract: Hyb 4116 4116 RAM 4116 4116 RAM HYB4116 4116 dynamic ram HYB4116A-3 4116p 1/DRAM 4116
Text: HYB 4116-2, HYB 4116-3 16,384-Bit Dynamic Random Access Memory RAM • • • • • Fully decoded, 16,384X1 bit organization • Separate data input and output • All inputs including clocks T T L com patible Three-state output, 2 T T L loads Com patible with M K 4116
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384-Bit
384X1
16-P2)
16-P3)
4116-P
4116 ram ic
Hyb 4116
4116
RAM 4116
4116 RAM
HYB4116
4116 dynamic ram
HYB4116A-3
4116p
1/DRAM 4116
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4116 ram
Abstract: RAM 4116 4116 16k ram 4116 4116 dynamic ram AT328 4116 MEMORY ci tc 4027 1/4116 16k ram mostek 4116
Text: MOSTEK 16,384 X 1 Bit Dynamic Ram MK 4116P-2/3 FEATURES □ Recognized industry standard 16-pin config uration from MOSTEK □ Common I/O capability using "early write" operation □ 150ns access time, 375ns cycle MK 4116-2 200ns access time, 375ns cycle (MK 4116-3)
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4116P-2/3
16-pin
150ns
375ns
200ns
462mW
-120V
76/AT3289-2
4116 ram
RAM 4116
4116 16k ram
4116
4116 dynamic ram
AT328
4116 MEMORY
ci tc 4027
1/4116 16k ram
mostek 4116
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MK4116-3
Abstract: 4116 dynamic ram RAM 4116 MK4116 4116 ram wc1f MK4164
Text: M05TEK 32,768 X1-BIT DYNAMIC RAM MK4332 D -3 FEATURES □ Utilizes tw o industry standard MK 4116 devices in an 18-pin package configuration □ Common I/O capability using "early w rite " operation □ □ □ 200ns access t ime, 3 75ns cycle (MK 4116-3)
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768x1-BIT
MK4332
18-pin
200ns
375ns
482mW
40rinW
MK4332
MK4116-3
4116 dynamic ram
RAM 4116
MK4116
4116 ram
wc1f
MK4164
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J416
Abstract: No abstract text available
Text: SMJ4164 65,536-BIT DYNAMIC RANDOM-ACCESS MEMORY JU L Y 1985 - JD PA CKA G E 6 5,5 36 x 1 Organization TO P V IEW I Single 5-V Supply (± 10% Tolerance NCC 1 DC 2 Upward Pin Compatible with '4116 (16K Dynamic RAM) w C 3 RASC 4 Available Temperature Ranges with MILSTD-883C High-Reliability Class B
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SMJ4164
536-BIT
MILSTD-883C
4-12e
J416
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4116 memory
Abstract: Z8000 4116 ram AMZ8000 LINK8000 4116
Text: Advanced Micro Computers A subsidiary of Advanced Micro Devices an Am96/4116 MonoBoard Computer Monitor Am96/4630 User’s Manual 059910282-001 $ 5.00 REVISION RECORD REVISION 01 DESCRIPTION PrcHmlary taau« (9 /2 6 /8 0 ) A Manual Released ( 3 /2 4 /8 1 )
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Am96/4116
Am96/4630
AmZ8000
16-Bit
00680157B.
Am96/4110
4116 memory
Z8000
4116 ram
LINK8000
4116
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1k ohm resistor
Abstract: MK4116 vqb 71 mos inverter mostek 4116
Text: MOSTEK TERMINAL CHARACTERISTICS OF THE MK4116 INPUT PROTECTION CIRCUIT A ll signal inputs to the MK 4116 have the input protection circu it shown in Figure 1 integrated onto the chip. The purpose o f the circu it is to protect the device from damage caused by static voltages that
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MK4116
1k ohm resistor
vqb 71
mos inverter
mostek 4116
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SN76477
Abstract: TNY 176 PN EQUIVALENT 2n4401 free transistor equivalent book tis43 XR2206 application notes Semiconductor Data Handbook mj802 2N3866 s2p bc149c TIP35C TIP36C sub amplifier circuit diagram LM131
Text: From the Publishers of ETI & HE HEM M iNqs E U c t r o n ic s L rd Electronic C om ponents Et M icrocom puters 16 BRAND STREET, HITCHIN, HERTS, SG5 1JE Telephone: 0462 33031 memories 2114L 2708 2716 2532 2732 4116 4164 6116P3 6116LP3 •Op 220p 210p 380p
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2114L
6116P3
6116LP3
AY-3-1270
AY-3-1350
AY-3-8910
AY-3-8912
AY-5-1230
CA3080E
CA3130E
SN76477
TNY 176 PN EQUIVALENT
2n4401 free transistor equivalent book
tis43
XR2206 application notes
Semiconductor Data Handbook mj802
2N3866 s2p
bc149c
TIP35C TIP36C sub amplifier circuit diagram
LM131
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M5K4116P-3
Abstract: 4116 ram RAM 4116 4116 memory chips M5K4116P 4116 ram ic M5K4116P3 5k411 4116
Text: MITSUBISHI LSIs M5K 4116 P-2, S-2; P-3, S-3; P-4, S-4 16 3 8 4 -B IT 1 6 3 8 4 -WORD BY 1-BIT DYNAMIC RAM DESCRIPTION PIN CONFIGURATION (TOP VIEW ) This is a fa m ily o f 16 3 8 4 -w o rd by 1-bit dynam ic RAMs, fabricated w ith the N-channel silicon-gate MOS process, and
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16-pin
M5K4116P-3
4116 ram
RAM 4116
4116 memory chips
M5K4116P
4116 ram ic
M5K4116P3
5k411
4116
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KS88C4116
Abstract: No abstract text available
Text: K S 88 C 4116 8-Bit CMOS Microcontroller ELECTRONICS Data Sheet DESCRIPTION The KS88C4116 single-chip 8-bit microcontroller is fabricated using a highly advanced CMOS process. With six 8-bit I/O ports, UART, two 8-bit and two 16-bit timer/counters, PWM with data capture, A/D converter, and 28-bit
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KS88C4116
16-bit
28-bit
1040-byte
16-Kbyte
64-Kbyte
32-kHz
71b4142
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J4164
Abstract: le2032
Text: SMJ4164 65,536-BIT DYNAMIC RANDOM-ACCESS MEMORY JU LY 1985 - R E V IS E D M A Y 1 9 8 8 JO P A C K A G E • 65.536 x 1 Organization • Single 5-V Supply ± 10% Tolerance • Upward Pin Compatible with '4116 (16K Dynamic RAM) • Available Temperature Ranges with MILSTD-883C High-Reliability Class B
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SMJ4164
536-BIT
MILSTD-883C
J4164
le2032
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4116 ram ic
Abstract: 4116 ram RAM 4116 4116 dynamic ram 4116 memory M5K4116P 4116 ic ram M5K4116P-3 4116 M5K4116
Text: MITSUBISHI LSIs M5K 4116 P-2, S-2; P-3, S-3; P-4, S-4 1 6 3 8 4 -B IT 1 6 3 8 4 -W O R D BY 1-B IT DYNAMIC RAM DESCRIPTION PIN CONFIGURATION (TOP VIEW ) T h is is a fa m ily o f 16 3 8 4 - w o r d by 1 -b it d y n a m ic R A M s , fa b ric a te d w ith th e N -ch an n e l silicon-gate M O S process, and
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384-BIT
384-WORD
16-pin
50ns/DIVISION
4116 ram ic
4116 ram
RAM 4116
4116 dynamic ram
4116 memory
M5K4116P
4116 ic ram
M5K4116P-3
4116
M5K4116
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7 segment display 542 application note
Abstract: RAM 4116 vfd 5x7 16 Digit 5x7 Segment VFD
Text: MITSUBISHI ICS AV COMMON M66004SP/FP 16-DIGIT 5x7-SEGMENT VFD CONTROLLER DESCRIPTION The M66004 is a 16-digit 5x7-segment vacuum fluorescent display (VFD) controller using the silicon gate CMOS tech nology. It contains 160 ROM characters and 16 user-defined RAM
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PDF
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M66004SP/FP
16-DIGIT
M66004
JIS-C-6220.
SEG35
7 segment display 542 application note
RAM 4116
vfd 5x7
16 Digit 5x7 Segment VFD
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4116 ram
Abstract: 4116 16k ram RAM 4116 MK4116 4116 dynamic ram MK4116-4 mostek 4116 mk4116J 410ns 4116 16K
Text: MOSTEK AT 16,384x1-BIT DYNAMIC RAM MK4116 J /N /E -4 FEATU R ES □ Recognized in dustry standard 16-pin co n fig u ra tion fro m M O STEK □ C om m on I/O ca p a b ility using "e a rly w rite " operation □ 250ns access tim e , 410ns cycle □ R ead-M odify-W rite, R AS-only refresh, and Page
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384x1-BIT
MK4116(
16-pin
250ns
410ns
462mW
MK4116
4116 ram
4116 16k ram
RAM 4116
4116 dynamic ram
MK4116-4
mostek 4116
mk4116J
4116 16K
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7 segment display 542 application note
Abstract: No abstract text available
Text: MITSUBISHI ICs AV COMMON M66004SP/FP 16-DIGIT 5x7-SEGMENT VFD CONTROLLER DESCRIPTION The M66004 is a 16-digit 5x7-segment vacuum fluorescent display (VFD) controller using the silicon gate CMOS tech nology. It contains 160 ROM characters and 16 user-defined RAM
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OCR Scan
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PDF
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M66004SP/FP
16-DIGIT
M66004
JIS-C-6220.
JIS-C-6220)
7 segment display 542 application note
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JIS-C-6220
Abstract: 4116 ram DIG03
Text: MITSUBISHI DIGITAL ASSP M66004SP/FP 16-DIGIT 5x7-SEGMENT VFD CONTROLLER DESCRIPTION The M66004 is a 16-digit 5x7-segment vacuum fluorescent display (VFD) controller using the silicon gate CMOS tech nology. It contains 160 ROM characters and 16 user-defined RAM
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OCR Scan
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PDF
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M66004SP/FP
16-DIGIT
M66004
JIS-C-6220.
JIS-C-6220)
JIS-C-6220
4116 ram
DIG03
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Untitled
Abstract: No abstract text available
Text: K S 8 8 C 4 1 16 Microcontroller ELECTRONICS DESCRIPTION The KS88C4116 single-chip 8-bit microcontroller is fabricated using a highly advanced CMOS process. With six 8-bit I/O ports, UART, two 8-bit and two 16-bit timer/counters, PWM with data capture, A/D converter, and 28-bit
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KS88C4116
16-bit
28-bit
1040-byte
16-Kbyte
G3254b
0D32S47
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ks88c4116
Abstract: CPU 414-2 Processor Module samsung dmb
Text: K S 8 8 C 4 1 16 Microcontroller DESCRIPTION The KS88C4116 single-chip 8-bit microcontroller is fabricated using a highly advanced CMOS process. With six 8-bit I/O ports, UART, two 8-bit and two 16-bit timer/counters, PWM with data capture, A/D converter, and 28-bit
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KS88C4116
KS88C4116
16-bit
28-bit
1040-byte
16-Kbyte
64-Kbyte
KS88C4116)
CPU 414-2 Processor Module
samsung dmb
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MOSTEK MEMORY
Abstract: k411 74S04 74S158 74S37 MK4027 MK4116 RAM 4116 4027 pin diagram
Text: MOSTEK COMPATIBLE MK4027 AND MK4116 MEMORY SYSTEM DESIGNS INTRODUCTION Memory Systems design is very much like any other interface design. It requires knowledge o f the system being interfaced to and also an in-depth knowledge o f the resource being interfaced. This in-depth
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MK4027
MK4116
MK4116.
LSI-11*
LSI-11
240ns
240ns
344mA
MOSTEK MEMORY
k411
74S04
74S158
74S37
RAM 4116
4027 pin diagram
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ON4027
Abstract: MK4116 74537 74537 latch LM 4027 MK 4027 DIODE SCHOTTKY X27 LSI-11 k411 74S04
Text: MOSTEK COMPATIBLE MK4027 AND MK4116 MEMORY SYSTEM DESIGNS INTRODUCTION Memory Systems design is very much like any other interface design. It requires knowledge of the system being interfaced to and also an in-depth knowledge of the resource being interfaced. This in-depth
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MK4027
MK4116
MK4116.
LSI-11*
ON4027
74537
74537 latch
LM 4027
MK 4027
DIODE SCHOTTKY X27
LSI-11
k411
74S04
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI DIGITAL ASSP M66004SP/FP 16-DIGIT 5X7-SEGMENT VFD CONTROLLER DESCRIPTION The M66004 is a 16-digit 5x7-segm ent vacuum fluorescent display (VFD) controller using the silicon gate CMOS tech nology. It contains 160 ROM characters and 16 user-defined RAM
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OCR Scan
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PDF
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M66004SP/FP
16-DIGIT
M66004
DIG11
4V4170J,
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vfd 5x7
Abstract: JIS-C-6220 T90MS EIS BMW 4116 ram ic 6 digit VFD BCM sdk M66004SP VFd 5X7 DOT M66004
Text: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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M66004SP/FP
16-DIGIÃ
vfd 5x7
JIS-C-6220
T90MS
EIS BMW
4116 ram ic
6 digit VFD
BCM sdk
M66004SP
VFd 5X7 DOT
M66004
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IN4109
Abstract: 2901N 4626 thomson 4122 1N4103 1N4106 1N4109 1N4120 1N4122 1N4127
Text: GENERAL PURPOSE & INDUSTRIAL Ä 7# SGS-THOMSON ZENER DIODES LOW LEAKAGE, LOW IMPEDANCE, LOW NOISE ZENER DIODES Type V z t / 'z t >ZT rZ T / 'Z T |R Vr Noise Density <ZM Package @ 250 ¡¡A nom V <M ) (Ö) <m A ) (V) max (jiV I V H i ) vF < 1 v(ramb = 25°c, iF = 0.2A)
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1N4618
1N4122
1N4127
1N4128
1N4132
1N4133
1N4135
IN4109
2901N
4626
thomson 4122
1N4103
1N4106
1N4109
1N4120
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information applikation
Abstract: U880D information applikation mikroelektronik Halbleiterbauelemente DDR "Mikroelektronik" Heft u880 mikroelektronik applikation VEB mikroelektronik mikroelektronik information applikation mikroelektronik DDR
Text: i« ¡ 2 Information Applikation t m f f i ^ o e l e k t s n o •/ Information Applikation n • Heft 30: HALBLEITERSPEICHER Teil 2 SRAM und DRAM v e b halbleiterw erk frankfurfc/odor KBD im veb Kombinat mikroelektronik KAMMER DER TECHNIK Bezirksverbond
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