Sonitron
Abstract: MAX9738 piezo speaker piezoelectric actuator ceramic speaker piezoelectric film piezo speaker datasheet piezoelectric speakers amplifier advantages and disadvantages APP4164
Text: Maxim > App Notes > AMPLIFIER AND COMPARATOR CIRCUITS AUDIO CIRCUITS Feb 05, 2008 Keywords: ceramic, piezo, speakers, class g, audio, cellular, cell phones APPLICATION NOTE 4164 Amplifier Considerations in Ceramic Speaker Applications Abstract: New cell phone designs demand small form factor while maintaining audio sound-pressure level.
|
Original
|
PDF
|
EngineerA2570A500160913/
file/F3101ECerLdPerfChar
com/an4164
MAX9730:
MAX9738:
MAX9788:
AN4164,
APP4164,
Appnote4164,
Sonitron
MAX9738
piezo speaker
piezoelectric actuator
ceramic speaker
piezoelectric film
piezo speaker datasheet
piezoelectric speakers
amplifier advantages and disadvantages
APP4164
|
VD-3-35
Abstract: MM5747 VD-3-54 papst 24v 24Vdc motor speed control 35414 of 24 volts 60 rpm dc motor one direction dc motor control circuit VD-3-43 dc motor 60 rpm AT 24V
Text: Issued November 1997 262-1261 Data Pack B Variodrive dc brushless motors & controllers Data Sheet RS stock numbers 225-4142, 225-4158, 225-4164, 225-4186, 225-4192, 225-4209 Introduction The Variodrive is a range of small motors and controllers designed to work together, to create an integrated drive and
|
Original
|
PDF
|
14-28Vdc
VD-3-35
MM5747
VD-3-54
papst 24v
24Vdc motor speed control
35414
of 24 volts 60 rpm dc motor
one direction dc motor control circuit
VD-3-43
dc motor 60 rpm AT 24V
|
VD-3-54
Abstract: VD-3-35 papst 24v MM5747 DC Motor speed control sensors working VD-3-43 motor winding copper coil data 937-140 brushless dc motor speed control Hall 3 phase DC motor speed control circuit
Text: Issued November 1996 229-7593 Data Pack B Variodrive dc brushless motors & controllers Data Sheet RS stock numbers 225-4142, 225-4158, 225-4164, 225-4186, 225-4192, 225-4209 Introduction The Variodrive is a range of small motors and controllers designed to work together, to create an integrated drive and
|
Original
|
PDF
|
14-28Vdc
VD-3-54
VD-3-35
papst 24v
MM5747
DC Motor speed control sensors working
VD-3-43
motor winding copper coil data
937-140
brushless dc motor speed control Hall
3 phase DC motor speed control circuit
|
PEB 4165 T
Abstract: AC GENERATOR PEB 3465 V1.2 PEB 3465 PEB 4166 T
Text: A pplic ation N ote, D S2, Jan. 2001 MuSLIC Multichannel Subscriber Line Interface Concept PEB 3465 V 1.2 PEB 31666/31665/31664 V1.3 PEB 4166/4165/4164 V2.3 Coefficient Handling of MuSLIC Chipset Wired Communications N e v e r s t o p t h i n k i n g . Edition 2001-01-15
|
Original
|
PDF
|
D-81541
PEB 4165 T
AC GENERATOR
PEB 3465 V1.2
PEB 3465
PEB 4166 T
|
ZR25D01
Abstract: 163 sot23 ZR25D ZR25D02 SOT23 25N
Text: PRECISION 2.5 VOLT MICROPOWER VOLTAGE REFERENCE ZR25D ISSUE 2 - FEBRUARY 1998 DEVICE DESCRIPTION FEATURES The ZR25D uses a bandgap circuit design to achieve a precision micropower voltage reference of 2.5 volts. The device is available in a small outline SOT23 surface mount
|
Original
|
PDF
|
ZR25D
ZR25D
ZR25D02
ZR25D01
ZR25D01
163 sot23
ZR25D02
SOT23 25N
|
ZRC250
Abstract: 253 SOT23
Text: Not Recommended for New Design Please Use ZRC250F01 /02 /03 PRECISION 2.5 VOLT MICROPOWER VOLTAGE REFERENCE ZR25D ISSUE 2 - FEBRUARY 1998 DEVICE DESCRIPTION FEATURES The ZR25D uses a bandgap circuit design to achieve a precision micropower voltage reference of 2.5 volts. The device is available
|
Original
|
PDF
|
ZRC250F01
ZR25D
ZR25D
ZR25D02
ZR25D01
ZRC250
253 SOT23
|
Untitled
Abstract: No abstract text available
Text: CEP21A2/CEB21A2 PRELIMINARY 4 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES D 20V , 25A , RDS ON =40mΩ @VGS=10V. RDS(ON)=70m Ω @VGS=4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handling capability.
|
Original
|
PDF
|
CEP21A2/CEB21A2
O-220
O-263
|
IC 4164
Abstract: 4164-2 RAM 4164 ram 4164 ram mos 4164 4164-2 HYB4164 RAM 4164 4164 eve
Text: SIEM EN S HYB 4164-1, HYB 4164-2, HYB 4164-3 65,536-Bit Dynamic Random Access Memory RAM • 65,536 X1 bit organization • All inputs and outputs T T L com patible • Industry standard 16-pin JE D E C configuration • High over- and undershooting capability
|
OCR Scan
|
PDF
|
536-Bit
16-pin
iPin12)
HYB41
IC 4164
4164-2 RAM
4164 ram
4164
ram mos 4164
4164-2
HYB4164
RAM 4164
4164 eve
|
4164 ram
Abstract: HYB4164 4164-2 RAM HYB4164-P2 4164 4164 dynamic ram siemens hyb4164 4164-2 RAM 4164 HYB4164-1
Text: SIEM ENS HYB 4164-1, HYB 4164-2, HYB 4164-3 65,536-Bit Dynamic Random Access Memory RAM • 65,536 X1 b it organization • • A ll inputs and outputs TTL com patible • High over- and undershooting capability on all inputs • Low supply current transients
|
OCR Scan
|
PDF
|
536-Bit
536X1
16-pin
HYB4164-1)
HYB4164-3)
HYB4164-P1
HYB4164-P2
HYB41
64-P3
4164 ram
HYB4164
4164-2 RAM
4164
4164 dynamic ram
siemens hyb4164
4164-2
RAM 4164
HYB4164-1
|
SN76477
Abstract: TNY 176 PN EQUIVALENT 2n4401 free transistor equivalent book tis43 XR2206 application notes Semiconductor Data Handbook mj802 2N3866 s2p bc149c TIP35C TIP36C sub amplifier circuit diagram LM131
Text: From the Publishers of ETI & HE HEM M iNqs E U c t r o n ic s L rd Electronic C om ponents Et M icrocom puters 16 BRAND STREET, HITCHIN, HERTS, SG5 1JE Telephone: 0462 33031 memories 2114L 2708 2716 2532 2732 4116 4164 6116P3 6116LP3 •Op 220p 210p 380p
|
OCR Scan
|
PDF
|
2114L
6116P3
6116LP3
AY-3-1270
AY-3-1350
AY-3-8910
AY-3-8912
AY-5-1230
CA3080E
CA3130E
SN76477
TNY 176 PN EQUIVALENT
2n4401 free transistor equivalent book
tis43
XR2206 application notes
Semiconductor Data Handbook mj802
2N3866 s2p
bc149c
TIP35C TIP36C sub amplifier circuit diagram
LM131
|
TMS4164A
Abstract: TM41 TM4164 TMS4416 RAM 4164 TM41 diode TM4164EL9 pj 889 diode
Text: TM4164EL9, TM4164FM9 65,536 BY 9-BIT DYNAMIC RAM MODULES NOVEMBER 1 9 8 3 - 6 5 ,5 3 6 X 9 Organization REVISED NOVEMBER 1 9 8 5 TM 4164EL9 . . . L SINGLE-IN-LINE PACKAGE* T M 4164 F M 9 . . . M SINGLE-IN-LINE PACKAGE Single 5 -V Supply 1 0 % Tolerance (TOP VIEW)
|
OCR Scan
|
PDF
|
TM4164EL9,
TM4164FM9
30-Pin
TM4164EL9
TM4164_
TMS4164A
TM41
TM4164
TMS4416
RAM 4164
TM41 diode
TM4164EL9
pj 889 diode
|
Untitled
Abstract: No abstract text available
Text: TM4164EL9, TM4164FM9 65,536 BY 9-BIT DYNAMIC RAM MODULES NOVEMBER 1 9 8 3 - 6 5 ,5 3 6 X 9 Organization REVISED NOVEMBER 1 9 8 5 TM 4164E L9 . . . L SINGLE-IN-LINE PACKAGEf T M 4164 F M 9 . . . M SINGLE-IN-LINE PACKAGE Single 5-V Supply 10% Tolerance (TOP VIEW)
|
OCR Scan
|
PDF
|
TM4164EL9,
TM4164FM9
30-Pin
4164E
|
sense amplifier bitline memory device
Abstract: F4164 F4164-1 F4164-2 F4164-3
Text: F 4164 6 5 ,5 3 6 x 1 Dynamic RAM MOS Memory Products Logic Symbol Description The F4 1 6 4 is a dynamic Random A c c e s s Memory RAM circuit organized a s 6 5 ,5 3 6 single-bit words. This memory u ses the Fairchild advanced double poly NMOS, Isoplanar-H p ro cess which allows
|
OCR Scan
|
PDF
|
F4164
F4164
sense amplifier bitline memory device
F4164-1
F4164-2
F4164-3
|
16K-BIT
Abstract: a316
Text: 15 - % Din iS - ÜAS W rite RAS AO A2 w “ &ßjt 13 “ AB 12 - A3 H - A4 l o k A5 Al VfK V ss _ i r v« 4116 2164. 16> 5 - CAS ìv " Dqu» W - A6 A3 - A4 1 0 - A5 ir 4164 A7 Rys. 1.38 Topografia wyprowadzeñ w uktadach pamiçci dynamicznej 16 Kbit i 64 Kbit. Do
|
OCR Scan
|
PDF
|
|
|
|
4164 ram
Abstract: 4164 dynamic ram RAM 4164 4Q709 4164 4164 (RAM)
Text: TEXAS IN STR { A S I C / M E M O R Y J- 7 7 Ö961725 TEXAS INSTR CASIC/MEMORY D E| 8^1755 D 04 G 7D t , 77C 4 0 7 0 6 3 D TM4164EL9, TM4164FM9 65,536 BY 9-BIT DYNAMIC RAM MODULES NOVEMBER 1983 - REVISED NOVEMBER 1986 6 5 ,5 3 6 X 9 Organization TM 4164EL9 . . . L SINGLE-IN-UNE PACKAGE*
|
OCR Scan
|
PDF
|
TM4164EL9,
TM4164FM9
30-Pin
4164EL9
4164FM
4164 ram
4164 dynamic ram
RAM 4164
4Q709
4164
4164 (RAM)
|
4164 ram
Abstract: IC 4164 DYNAMIC RAM 65536 TEXAS tms4164 RAM 4164 4164 (RAM)
Text: TEXAS INSTR -CASIC/flEMORY} 77 DE§ 0Tbl7SS 0040737 3 0 9 6 1 7 2 5 TEXAS INSTR <ASIC/MEMORY T7C 4 0 7 3 7 TM4164FL8, TM4164FM8 65.536 BY 8-BIT DYNAMIC RAM MODULES NOVEMBER 1983 - REVISED NOVEMBER 1985 TM 4164FL8 . TM 4164FM 8 6 5,5 36 X 8 Organization Single 5-V Supply 10% Tolerance)
|
OCR Scan
|
PDF
|
TM4164FL8,
TM4164FM8
30-Pin
4164FL8
4164FM
4164 ram
IC 4164
DYNAMIC RAM 65536 TEXAS
tms4164
RAM 4164
4164 (RAM)
|
Ionization Detectors
Abstract: AABX 361-s
Text: 19-1195; RevO;4/97 JVXSÏXAJVK SOT23, M icropower, Single-Supply, R aibto-R ail I/O Op Am ps The combination of excellent bandwidth/power perfor mance, single-supply operation, and miniature footprint makes these op amps ideal for portable equipment and
|
OCR Scan
|
PDF
|
MAX4162)
250mV
200kHz
MAX4162/MAX4163/MAX4164
X4164
AX4163
4162JMAX4163/M
MAX4162
MAX4163
MAX4164
Ionization Detectors
AABX
361-s
|
4164-12
Abstract: NEC 4164 PD4164 4164-10 LPD416
Text: NEC |jl,PD4164 6 5,536 x 1-BIT DYNAMIC NMOS RAM NEC Electronics Inc. Revision 4 Description Pin Configuration The N EC J.PD4164 is a 65,536-word by 1-bit dynamic N-channel MOS R andom -access M em ory (RAM designed to operate from a single + 5V power supply. The negativevoltage substrate bias is internally generated providing both
|
OCR Scan
|
PDF
|
uPD4164
536-word
M-PD4164
PD4164
fxPD4164
4164-12
NEC 4164
4164-10
LPD416
|
ZR25D01
Abstract: No abstract text available
Text: PRECISION 2.5 VOLT MICROPOWER VOLTAGE REFERENCE ZR25D ISSUE 2 - FEBRUARY 1998 DEVICE DESCRIPTION FEATURES The ZR25D uses a bandgap circuit design to achieve a pre cisio n m icro p o w e r voltage reference o f 2.5 volts. The device is available in a sm all outline SOT23 surface m ount
|
OCR Scan
|
PDF
|
ZR25D
ZR25D
ZR25D02
ZR25D01
ZR25D01
|
SMW45N10
Abstract: No abstract text available
Text: SMW45N10 erSiScanix ^LJP incorporated N-Channel Enhancement Mode Transistor TO-247 AD TOP VIEW PRODUCT SUMMARY V BR DSS 100 r DS(ON) •d (Cl) (A) 0.040 45 1 GATE 2 DRAIN 3 SOURCE 1 2 3 ABSOLUTE MAXIMUM RATINGS (Tc = 25°C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS
|
OCR Scan
|
PDF
|
SMW45N10
O-247
10peration
SMW45N10
|
TF210
Abstract: No abstract text available
Text: CEP8060LR/CEB8060LR PRELIMINARY N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES • 6 0 V , 8 0 A , R ds o n =9.0 itiQ RDS(ON)=12.0m£i @ V gs =1 0 V . @ V gs= 5V. • Super high dense cell design for extremely low R d s (o n ). • High power and current handling capability.
|
OCR Scan
|
PDF
|
CEP8060LR/CEB8060LR
O-220
O-263
TF210
|
5K4164ANP-20
Abstract: No abstract text available
Text: MITSUBISHI LSIs M 5K4164ANP-20 6 5 5 3 6 -B IT 6 5 5 3 6 - WORD B Y 1-BIT DYNAMIC RAM DESCRIPTION PIN CONFIGURATION (TOP VIEW) T his is a fa m ily o f 65536-word b y 1-bit d y n a m ic R A M s , fab ricate d w ith the high p erform ance N-channel silicongate
|
OCR Scan
|
PDF
|
5K4164ANP-20
65536-word
4164ANP-20
65536-BIT
6SS36-W
5K4164ANP-20
|
cfk logic chip
Abstract: 419AK
Text: Temic DG417/418/419 S e m i c o n d u c t o r s Precision CMOS Analog Switches Features Benefits Applications • • • • • • • • Wide Dynamic Range • Low Signal Errors and Distortion • Break-Before-Make Switching Action • Simple Interfacing
|
OCR Scan
|
PDF
|
DG417/418/419
DG417/418/419
DG419,
S-52880--Rev.
28-Apr-97
cfk logic chip
419AK
|
A7c DIODE
Abstract: 74AHCT 113B8 74als power consumption
Text: Zytrex ZX54AHCT ZX74AHCT 640 ?* "cT643 Octal Bus Transceivers February 1985 OBJECTIVE SPECIFICATIONS . Features Description • Function, pin-out, speed and drive compatibility with 54/74ALS logic family These high-speed octal bus transceivers are designed
|
OCR Scan
|
PDF
|
ZX54AHCT
ZX74AHCT
54/74ALS
74AHCT:
54AHCT:
A7c DIODE
74AHCT
113B8
74als power consumption
|
