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    4164-2 RAM Search Results

    4164-2 RAM Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    4164-15FGS/BZA Rochester Electronics LLC 4164 - DRAM, 64K X 1, 3-STATE OUTPUTS, 150 NS ACCESS TIME - Dual marked (8201006ZA) Visit Rochester Electronics LLC Buy
    4164-12JDS/BEA Rochester Electronics LLC 4164 - DRAM, 64K X 1, 3-STATE OUTPUTS, 120 NS ACCESS TIME - Dual marked (8201008EA) Visit Rochester Electronics LLC Buy
    4164-15JDS/BEA Rochester Electronics LLC 4164 - DRAM, 64K X 1, 3-STATE OUTPUTS, 150 NS ACCESS TIME - Dual marked (8201006EA) Visit Rochester Electronics LLC Buy
    NSC810AD/B Rochester Electronics LLC NSC810A - RAM I/O TIMER Visit Rochester Electronics LLC Buy
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device (High voltage PWM DC brushless motor driver) / VBB=600 V / Iout=2 A / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation

    4164-2 RAM Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    IC 4164

    Abstract: 4164-2 RAM 4164 ram 4164 ram mos 4164 4164-2 HYB4164 RAM 4164 4164 eve
    Text: SIEM EN S HYB 4164-1, HYB 4164-2, HYB 4164-3 65,536-Bit Dynamic Random Access Memory RAM • 65,536 X1 bit organization • All inputs and outputs T T L com patible • Industry standard 16-pin JE D E C configuration • High over- and undershooting capability


    OCR Scan     		536-Bit 16-pin iPin12) HYB41 IC 4164 4164-2 RAM 4164 ram 4164 ram mos 4164 4164-2 HYB4164 RAM 4164 4164 eve PDF

    4164 ram

    Abstract: HYB4164 4164-2 RAM HYB4164-P2 4164 4164 dynamic ram siemens hyb4164 4164-2 RAM 4164 HYB4164-1
    Text: SIEM ENS HYB 4164-1, HYB 4164-2, HYB 4164-3 65,536-Bit Dynamic Random Access Memory RAM • 65,536 X1 b it organization • • A ll inputs and outputs TTL com patible • High over- and undershooting capability on all inputs • Low supply current transients


    OCR Scan     		536-Bit 536X1 16-pin HYB4164-1) HYB4164-3) HYB4164-P1 HYB4164-P2 HYB41 64-P3 4164 ram HYB4164 4164-2 RAM 4164 4164 dynamic ram siemens hyb4164 4164-2 RAM 4164 HYB4164-1 PDF

    4164 ram

    Abstract: 4164 dynamic ram RAM 4164 4Q709 4164 4164 (RAM)
    Text: TEXAS IN STR { A S I C / M E M O R Y J- 7 7 Ö961725 TEXAS INSTR CASIC/MEMORY D E| 8^1755 D 04 G 7D t , 77C 4 0 7 0 6 3 D TM4164EL9, TM4164FM9 65,536 BY 9-BIT DYNAMIC RAM MODULES NOVEMBER 1983 - REVISED NOVEMBER 1986 6 5 ,5 3 6 X 9 Organization TM 4164EL9 . . . L SINGLE-IN-UNE PACKAGE*


    OCR Scan     		TM4164EL9, TM4164FM9 30-Pin 4164EL9 4164FM 4164 ram 4164 dynamic ram RAM 4164 4Q709 4164 4164 (RAM) PDF

    LM 4138

    Abstract: HL 482 RAM 4163 cd 4162 GFIJ c 4161
    Text: TO SH IB A TLCS-870/X V 3 y - t r í i , TLCS-870/X v V - X 1.10.1 t< flJ g S íift'íív ^ c o v i-c ia ili L T $¿3S/3£Í& B n ^ 1 LD A, (x) ^ í y ^ fj Í08H' -7 > t “ #±Ü liO ^ ï 'J fi-tf n f X h ÿ (?) n — ^ K$% ❖ j i t f b b %> f) t “ -tfn T-x M l f g H Í -9 i ¿ H i <0,


    OCR Scan     		TLCS-870/X 000FC 00102H 00FCH 11110000B 11011000B 11111111B 00001111B 10100110B LM 4138 HL 482 RAM 4163 cd 4162 GFIJ c 4161 PDF

    4164 ram

    Abstract: IC 4164 DYNAMIC RAM 65536 TEXAS tms4164 RAM 4164 4164 (RAM)
    Text: TEXAS INSTR -CASIC/flEMORY} 77 DE§ 0Tbl7SS 0040737 3 0 9 6 1 7 2 5 TEXAS INSTR <ASIC/MEMORY T7C 4 0 7 3 7 TM4164FL8, TM4164FM8 65.536 BY 8-BIT DYNAMIC RAM MODULES NOVEMBER 1983 - REVISED NOVEMBER 1985 TM 4164FL8 . TM 4164FM 8 6 5,5 36 X 8 Organization Single 5-V Supply 10% Tolerance)


    OCR Scan     		TM4164FL8, TM4164FM8 30-Pin 4164FL8 4164FM 4164 ram IC 4164 DYNAMIC RAM 65536 TEXAS tms4164 RAM 4164 4164 (RAM) PDF

    4164-12

    Abstract: NEC 4164 PD4164 4164-10 LPD416
    Text: NEC |jl,PD4164 6 5,536 x 1-BIT DYNAMIC NMOS RAM NEC Electronics Inc. Revision 4 Description Pin Configuration The N EC J.PD4164 is a 65,536-word by 1-bit dynamic N-channel MOS R andom -access M em ory (RAM designed to operate from a single + 5V power supply. The negativevoltage substrate bias is internally generated providing both


    OCR Scan     		uPD4164 536-word M-PD4164 PD4164 fxPD4164 4164-12 NEC 4164 4164-10 LPD416 PDF

    PEB 4165 T

    Abstract: AC GENERATOR PEB 3465 V1.2 PEB 3465 PEB 4166 T
    Text: A pplic ation N ote, D S2, Jan. 2001 MuSLIC Multichannel Subscriber Line Interface Concept PEB 3465 V 1.2 PEB 31666/31665/31664 V1.3 PEB 4166/4165/4164 V2.3 Coefficient Handling of MuSLIC Chipset Wired Communications N e v e r s t o p t h i n k i n g . Edition 2001-01-15


    Original     		D-81541 PEB 4165 T AC GENERATOR PEB 3465 V1.2 PEB 3465 PEB 4166 T PDF

    Untitled

    Abstract: No abstract text available
    Text: TM4164EL9, TM4164FM9 65,536 BY 9-BIT DYNAMIC RAM MODULES NOVEMBER 1 9 8 3 - 6 5 ,5 3 6 X 9 Organization REVISED NOVEMBER 1 9 8 5 TM 4164E L9 . . . L SINGLE-IN-LINE PACKAGEf T M 4164 F M 9 . . . M SINGLE-IN-LINE PACKAGE Single 5-V Supply 10% Tolerance (TOP VIEW)


    OCR Scan     		TM4164EL9, TM4164FM9 30-Pin 4164E PDF

    dram 4164

    Abstract: 74670 register 41256
    Text: UNITED MICROELECTRONICS 30E D • q3a5fl5a 00001 51 T ■ T ~ 5 ^ - 3 3 -òS UM82C088 PC/X T Integration Chip Features ■ Fully IBM-PC/XT compatible ■ 82C84 Clock generator with 2 clock-inputs to generate the CPU clock. These are 14.318 MHz and 30 MHz which will support 4.77 MHz and 10 MHz CPU clocks


    OCR Scan     		UM82C088 82C84 82C88 82C37 82C59 82C53 82C55 dram 4164 74670 register 41256 PDF

    AN-3004

    Abstract: valve control example l1.2 Multivibrator 555
    Text: BACK AN3004 sames AN3004 APPLICATION NOTE SA9202 PORT EXPANDER The SA9202 family of port expanders may be used in a variety of applications in industries ranging from agricultural to food processing or telecommunications. This application note describes how the SA9202 could be applied in a typical industrial control system.


    Original     		AN3004 AN3004 SA9202 PDS038-SA9202-001 100Hz AN-3004 valve control example l1.2 Multivibrator 555 PDF

    information applikation

    Abstract: U880D information applikation mikroelektronik Halbleiterbauelemente DDR "Mikroelektronik" Heft u880 mikroelektronik applikation VEB mikroelektronik mikroelektronik information applikation mikroelektronik DDR
    Text: i« ¡ 2 Information Applikation t m f f i ^ o e l e k t s n o •/ Information Applikation n • Heft 30: HALBLEITERSPEICHER Teil 2 SRAM und DRAM v e b halbleiterw erk frankfurfc/odor KBD im veb Kombinat mikroelektronik KAMMER DER TECHNIK Bezirksverbond


    OCR Scan     		PDF

    lm3364

    Abstract: M5K4164NP-15 LM3364-15 LM3364-20 AM9064-15 M5K4164NS-15 IMS2600-15 A9064 C2164-15 M5K4164NP-20
    Text: - 168 - X m % tt £ CC TRAC max ns) 6 4 K nMOS D y n a m i c + y :7' ft 'ft 'f (ns) TCAD rain (ns) TRCY TAH min (ns) TP nil) (ns) TWCY min (ns) TDH rain (ns) RAM (6 5 5 3 6 x 1 ) £ TRWC min (ns) V D D or V C C (V) A M I DD max <mA) I D D STANDBY (ISB/ISB2)


    OCR Scan     		16PIN An9064-10 M5K4164AP-10 M5K4164AP-12 M5K4164AP-15 M5K4164NP-15 M5K4164NP-20 M5K4164NS-15 M5K4164P-15 lm3364 LM3364-15 LM3364-20 AM9064-15 IMS2600-15 A9064 C2164-15 PDF

    sense amplifier bitline memory device

    Abstract: F4164 F4164-1 F4164-2 F4164-3
    Text: F 4164 6 5 ,5 3 6 x 1 Dynamic RAM MOS Memory Products Logic Symbol Description The F4 1 6 4 is a dynamic Random A c c e s s Memory RAM circuit organized a s 6 5 ,5 3 6 single-bit words. This memory u ses the Fairchild advanced double poly NMOS, Isoplanar-H p ro cess which allows


    OCR Scan     		F4164 F4164 sense amplifier bitline memory device F4164-1 F4164-2 F4164-3 PDF

    Untitled

    Abstract: No abstract text available
    Text: □PM Dense-Pac Microsystems, Inc. DPS8256P8 256K X 8 CMOS SRAM MODULE O DESCRIPTION: The DPS8256P8-25, -35, -45, -55 is a high speed 256K x 8 Static Random Access M em o ry SRAM m o d u le constructed on an ep oxy lam inate substrate using eight 256K x 1 C M O S RAM 's in plastic surface


    OCR Scan     		DPS8256P8 DPS8256P8-25, DPS8256P8 DPS8256P8-25 DPS8256P8-35 DPS8256P8-45 DPS8256P8-55 30A033-00 30A033-00 PDF

    PEB3465

    Abstract: PEB 4165 T PEB31665 dcnc PEB 4166 T P-MQFP-80-1 smd marking KH PEB31664 PEB31666 PEB4164
    Text: Dat a Sh eet , DS1 , Ju ly 20 00 QAP Q u a d A n a lo g P O TS PEB 3465 Version 1.2 W ir e d C o m mu n i ca t io n s N e v e r s t o p t h i n k i n g . Edition 2000-07-14 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 München, Germany


    Original     		D-81541 PEB3465 PEB 4165 T PEB31665 dcnc PEB 4166 T P-MQFP-80-1 smd marking KH PEB31664 PEB31666 PEB4164 PDF

    4164 ram

    Abstract: lh521008
    Text: CMOS 128K x 8 Static RAM FEATURES • Fast Access Times: 20/25/35 ns • JEDEC Standard Pinout • High Density 32-Pin, 400-mil SOJ Package • Low Power Standby when Deselected • TTL Compatible I/O • 5 V± 10% Supply • Fully Static Operation • 2 V Data Retention


    OCR Scan     		32-Pin, 400-mil 32-PIN LH521008 I---------25 SOJ32-P-400) LH521008K-25 4164 ram lh521008 PDF

    smd diode marking LM

    Abstract: 4166 ic equivalent PEB 4165 T ntp 3000 HIGHWAY drv 801 ic MVAM-1 PEB 4166 T PEB31666 PEB3465 PEB4164
    Text: Pr el imi nar y Dat a Sh eet , DS1 , Ju ly 20 00 MuSLIC M u l t i c h a n n e l S u b s c r i b e r L in e Interface Concept PEB 3465 Version 1.2 PEB 31666/31664 Version 1.3 PEB 4166/4164 Version 2.3 W ir e d C o m mu n i ca t io n s N e v e r s t o p t h i n k i n g .


    Original     		D-81541 smd diode marking LM 4166 ic equivalent PEB 4165 T ntp 3000 HIGHWAY drv 801 ic MVAM-1 PEB 4166 T PEB31666 PEB3465 PEB4164 PDF

    150TYP

    Abstract: No abstract text available
    Text: DS2257, DS 2257S DALLAS SEMICONDUCTOR DS2257, DS2257S 32K x 8 3V Operation Static RAM PIN ASSIGNMENT FEATURES • Low power CMOS design A12 C C A7 Z A14 • Standby current 400 nA max at 500 nA max at 4 jiA max at 10 nA max at tA = 25°C tA = 25°C tA = 60°C


    OCR Scan     		DS2257, 2257S DS2257S DS2257S 28-PIN 150TYP PDF

    Untitled

    Abstract: No abstract text available
    Text: DS 2257, DS 2257S PA LLA S SEMICONDUCTOR DS2257, DS2257S 32K x 8 3V Operation Static RAM PIN ASSIGNMENT FEATURES • Low power CMOS design • Standby current 400 nA max at 500 nA max at 4 jiA max at 10 nA max at t* = 25°C tA = 25°C ìa = 60°C t* = 85°C


    OCR Scan     		2257S DS2257, DS2257S DS2257S 28-PIN PDF

    PEB 4165 T

    Abstract: 4166 ic equivalent SPT170 PEB31664 PEB31666 PEB4164 P-MQFP-64-1 PEB 4166 T
    Text: Pr eli mi nar y Dat a Sh eet , DS1 , No v. 20 00 MuPP µC Multichannel Processor for POTS PEB 31666 Version 1.3 PEB 31664 Version 1.3 W ir e d C o m m u n i c a t io n N e v e r s t o p t h i n k i n g . Edition 2000-11-06 Published by Infineon Technologies AG,


    Original     		D-81541 PEB 4165 T 4166 ic equivalent SPT170 PEB31664 PEB31666 PEB4164 P-MQFP-64-1 PEB 4166 T PDF

    Untitled

    Abstract: No abstract text available
    Text: DS2257, DS2257S DALLAS SEMICONDUCTOR CORP DALLAS SEMICONDUCTOR SO E D 2bl4130 1 DS2257, DS2257S 32K x 8 3V Operation Static RAM PIN ASSIGNMENT FEATURES • Low power CMOS design • • Standby current 400 nA max at 500 nA max at 4 jiA max at lOjiAmaxat 00047TD


    OCR Scan     		DS2257, DS2257S 2bl4130 00047TD DS2257S 00047TM PDF

    DDA 003A

    Abstract: DS2257 DS2257-70 DS2257S DS2257S-70
    Text: DS2257, DS2257S DA LL AS S E M I C O N D U C T O R CORP DALLAS SEMICONDUCTOR SOE D 2bl4130 00047^0 1 DS2257, DS2257S 32K x 8 3V Operation Static RAM PIN ASSIGNMENT FEATURES • Low power CMOS design • • Standby current 400 nA max at 500 nA max at 4 jiA max at


    OCR Scan     		DS2257, DS2257S 2bl4130 00047TG DS2257S DDA 003A DS2257 DS2257-70 DS2257S-70 PDF

    TMS4164A

    Abstract: TM41 TM4164 TMS4416 RAM 4164 TM41 diode TM4164EL9 pj 889 diode
    Text: TM4164EL9, TM4164FM9 65,536 BY 9-BIT DYNAMIC RAM MODULES NOVEMBER 1 9 8 3 - 6 5 ,5 3 6 X 9 Organization REVISED NOVEMBER 1 9 8 5 TM 4164EL9 . . . L SINGLE-IN-LINE PACKAGE* T M 4164 F M 9 . . . M SINGLE-IN-LINE PACKAGE Single 5 -V Supply 1 0 % Tolerance (TOP VIEW)


    OCR Scan     		TM4164EL9, TM4164FM9 30-Pin TM4164EL9 TM4164_ TMS4164A TM41 TM4164 TMS4416 RAM 4164 TM41 diode TM4164EL9 pj 889 diode PDF

    5K4164ANP-20

    Abstract: No abstract text available
    Text: MITSUBISHI LSIs M 5K4164ANP-20 6 5 5 3 6 -B IT 6 5 5 3 6 - WORD B Y 1-BIT DYNAMIC RAM DESCRIPTION PIN CONFIGURATION (TOP VIEW) T his is a fa m ily o f 65536-word b y 1-bit d y n a m ic R A M s , fab ricate d w ith the high p erform ance N-channel silicongate


    OCR Scan     		5K4164ANP-20 65536-word 4164ANP-20 65536-BIT 6SS36-W 5K4164ANP-20 PDF