cp019
Abstract: CP019-1B ISSI 614 7306-11 86038-8
Text: ISSI REPRESENTATIVES Integrated Silicon Solution, Inc. ISSI Regional Sales Offices Headquarters 800-379-4774 Tel. 408-588-0806 Fax Northeast Office 603-594-4176 Tel. 603-594-4181 Fax Central Office 972-488-9691 Tel. 972-488-9690 Fax West Coast Office Europe Office
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sharp ir receiver
Abstract: GP1UD267RK GP1UD267RK0F 4176
Text: GP1UD267RK0F - Sharp Microelectronics Products Product Search Location: Optoelectronics - Infrared » IR Remote Receiver » GP1UD267RK0F Advanced Search Parametric Search GP1UD267RK0F Home Optoelectronics Infrared GP1UD26R Infrared •Photocouplers •IrDA
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GP1UD267RK0F
GP1UD267RK0F
GP1UD26R
GP1UD267RK
Audio/Visua04/15/2005
sharp ir receiver
GP1UD267RK
4176
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K 2545
Abstract: TH225J TH349 TH220J33G TH310J36G TH310J34G K1388 TH225J13G TH310J39G TH410J40G
Text: DIODE TYPE THERMISTOR GLASS ENCAPSULATED RADIAL LEAD THERMISTOR This product is a thermistor chip that has been glass sealed in DHD type double heat sink diode package . This construction results in a high reliability durable product. FEATURES • • •
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TH220J33G
TH225J13G
TH238J34G
TH253J34G
TH310J34G
TH310J36G
TH310J39G
TH315J39G
TH320J39G
TH349J39G
K 2545
TH225J
TH349
K1388
TH410J40G
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STK621-051
Abstract: STK621-220 Sanyo STK621 STK630 INVERTER BOARD STK621 STK762-921G 3 phase inverter sanyo STK621 STK630-255A stk621 stk611-031
Text: Ordering number: EP35E Combining Power and Control, Sanyo Inverter Power IC Enables Easy Realization of Power Saving for Equipment To what extent can electrical equipment become environmentally friendly? One of the answers is power-saving and low-consumption power technology. Inverter technology
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EP35E
15-C2,
STK621-051
STK621-220
Sanyo STK621
STK630
INVERTER BOARD STK621
STK762-921G
3 phase inverter sanyo STK621
STK630-255A
stk621
stk611-031
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K 2545
Abstract: k1388 6790 3952K TH310J34G diode 8847 TH420J34G TH320J39G TH350J39G TH310J39G
Text: g DIODE TYPE THERMISTOR GLASS ENCAPSULATED RADIAL LEAD THERMISTOR This product is a thermistor chip that has been glass sealed in DHD type double heat sink diode package . This construction results in a high reliability durable product. FEATURES • • •
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TH220J33G
TH225J13G
TH238J34G
TH253J34G
TH310J34G
TH310J36G
TH310J39G
TH315J39G
TH320J39G
TH346661
K 2545
k1388
6790
3952K
TH310J34G
diode 8847
TH420J34G
TH320J39G
TH350J39G
TH310J39G
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SMV1213-040LF
Abstract: No abstract text available
Text: DATA SHEET SMV1213-040LF: Surface Mount, 0402 Silicon Hyperabrupt Tuning Varactor Diode Applications • Wide bandwidth VCOs • Wide range voltage-tuned phase shifters and filters Features • Low series resistance: 1.4 Ω typical • High capacitance ratio at low reverse voltage: CT1/CT2.5 = 2.0
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SMV1213-040LF:
J-STD-020
SMV1213-040LF
201606B
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Untitled
Abstract: No abstract text available
Text: DATA SHEET SMV1213-040LF: Surface Mount, 0402 Silicon Hyperabrupt Tuning Varactor Diode Applications • Wide bandwidth VCOs • Wide range voltage-tuned phase shifters and filters Features • Low series resistance: 1.4 Ω typical • High capacitance ratio at low reverse voltage: CT1/CT2.5 = 2.0
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SMV1213-040LF:
J-STD-020
SMV1213-040LF
01606A
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Untitled
Abstract: No abstract text available
Text: GE Measurement & Control Solutions NTC Diode Thermometrics Thermistors A range of NTC chip thermistors in DO-35 style glass package diode outline with axial soldercoated copper-clad steel wires. • Available on axial bandolier to IEC-286-1/ EIA-468A and packet taped to EIA RS-481 for
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DO-35
IEC-286-1/
EIA-468A
RS-481
920-320C
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ntc thermistor GE
Abstract: K3684 thermistor ntc 500k GE Sensing DKA302 DKF104 th310 K3745 DIODE 4014 NTC 5K thermistor
Text: GE Sensing Features A range of NTC chip thermistors in DO-35 style glass package diode outline with axial solder-coated copper-clad steel wires. • Designed for accurate temperature measurement, control and compensation • Tight tolerances on resistance and B value
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DO-35
IEC-286-1/EIA-468A
RS-481
920-320B
ntc thermistor GE
K3684
thermistor ntc 500k
GE Sensing
DKA302
DKF104
th310
K3745
DIODE 4014
NTC 5K thermistor
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Untitled
Abstract: No abstract text available
Text: MC54/74F379 QUAD PARALLEL REGISTER The MC54/74F379 is a 4-bit register with a buffered common enable. This device is similar to the F175 but features the common Enable rather than common Master Reset. The F379 consists of four edge-triggered D-type flip-flops with individual
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MC54/74F379
MC54/74F379
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S3040
Abstract: S3043 S3044 STM-16 STS-48
Text: DEVICE SPECIFICATION SONET/SDH/ATM OC-48 1:16 RECEIVER BiCMOS LVPECL OC-12 CLOCK1:16 GENERATOR SONET/SDH/ATM OC-48 RECEIVER AND RECEIVER TRANSMITTER S3044 S3044 S3044 GENERAL DESCRIPTION FEATURES • Micro-power Bipolar technology • Complies with Bellcore and ITU-T
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OC-48
OC-12
S3044
OC-48)
16-bit
S3044
OC-48
S3040
S3043
STM-16
STS-48
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Untitled
Abstract: No abstract text available
Text: DEVICE SPECIFICATION SONET/SDH/ATM OC-48 1:16 RECEIVER BiCMOS LVPECL OC-12 CLOCK1:16 GENERATOR SONET/SDH/ATM OC-48 RECEIVER AND RECEIVER TRANSMITTER S3044 S3044 S3044 GENERAL DESCRIPTION FEATURES • Micro-power Bipolar technology • Complies with Bellcore and ITU-T
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OC-48
OC-12
S3044
S3044
OC-48)
16-bit
OC-48
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Untitled
Abstract: No abstract text available
Text: DEVICE SPECIFICATION SONET/SDH/ATM OC-48 1:16 RECEIVER BiCMOS LVPECL OC-12 CLOCK1:16 GENERATOR SONET/SDH/ATM OC-48 RECEIVER AND RECEIVER TRANSMITTER S3044 S3044 S3044 GENERAL DESCRIPTION FEATURES • Micro-power Bipolar technology • Complies with Bellcore and ITU-T
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OC-48
OC-12
S3044
S3044
OC-48)
16-bit
OC-48
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Untitled
Abstract: No abstract text available
Text: CEP10N6/CEB10N6 PRELIMINARY 4 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES D 600V , 10A , RDS ON =1Ω @VGS=10V. Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220 & TO-263 package.
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CEP10N6/CEB10N6
O-220
O-263
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Untitled
Abstract: No abstract text available
Text: DEVICE SPECIFICATION SONET/SDH/ATM OC-48 1:16 RECEIVER BiCMOS LVPECL OC-12 CLOCK1:16 GENERATOR SONET/SDH/ATM OC-48 RECEIVER AND RECEIVER TRANSMITTER S3044 S3044 S3044 GENERAL DESCRIPTION FEATURES • Micro-power Bipolar technology • Complies with Bellcore and ITU-T
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OC-48
OC-12
S3044
S3044
OC-48)
16-bit
OC-48
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EN417
Abstract: marking sh SB20-05P RTA100
Text: Ordering n u m b e r:EN417^6 SB20-05P No.4176 Schottky B arrier Diode SANYO 50V, 2A Rectifier A pplications • High frequency rectification switching regulators, converters, choppers . F eatu re s •Low forward voltage (Vp max = 0.55V). ■Fast reverse recovery time (trr max = 20ns).
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EN417
SB20-05P
marking sh
SB20-05P
RTA100
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Untitled
Abstract: No abstract text available
Text: Zener Regulator Diodes Part Number Microsemi Division Package Outline Type DO-213AA DO-213AA DO-213AA . DO-35 B SQ. MELF : DO-35 B SQ. MELF DO-35 B SQ. MELF DO-35 B SQ. MELF DO-35 B SQ. MELF DO-35 DO-35 DO-35 DO-35 DO-7 DO-35 DO-7 DO-213AA DO-213AA DO-35 DO-213AA
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DO-213AA
DO-213AA
DO-35
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Untitled
Abstract: No abstract text available
Text: CEP9N25/CEB9N25 PRELIMINARY N-Channel Enhancement Mode Field Effect Transistor FEATURES • 250V, 8.1A, R ds o n =450 it Q @VGS=10V. • Super high dense cell design for extremely low R d s (o n ). • High power and current handling capability. • TO-220 & TO-263 package.
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CEP9N25/CEB9N25
450itQ
O-22Q
O-263
to-263
to-220
CEP9N25/CEB9N25
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K1273
Abstract: K2158 1A4M K1399 K2111 K680A a1464 D82C J356 k1587
Text: QUICK REFERENCE GUIDE QUICK REFERENCE GUIDE 1 QUICK REFERENCE TABLE 3 PIN MINI MOLD □ Switching Diodes I Q UICK REFERENCE GUIDE_ Qß ! 3 PIN MINI MOLD SC-59 . _ □ Transistors and FETs v c e o 15 20 20 2S C 2223 2S A1462 40 30
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SC-59
A1462
2SB624
A1464
B736A
K1582
J185W
RD36M
RD39M
RD10FM
K1273
K2158
1A4M
K1399
K2111
K680A
D82C
J356
k1587
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SMW70N06-14
Abstract: 4176 diode smw70n06 250JJ
Text: SMW70N06-14 fEX'SiEconix JJm in c o r p o r a te d N-Channel Enhancement Mode Transistor TO -247 AD TOP VIEW ABSOLUTE MAXIMUM RATINGS 0 c = 25°C Unless Otherwise Noted PAR AM ETERS/TEST CO NDITIONS Gate-Source Voltage Continuous Drain Current Tc = 25°C
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SMW70N06-14
10peration
SMW70N06-14
4176 diode
smw70n06
250JJ
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2N3015
Abstract: No abstract text available
Text: TYPE 2N3015 N-P-N SILICON TRANSISTOR B U L L E T I N N O . D L - S 6 4 5 0 1 7 , M A R C H 196 4 DESIGNED FOR HIGH-SPEED, HIGH-CURRENT SWITCHING APPLICATIONS * m echanical d a ta TH E COLLECTOR IS IN ELE C T R IC A L - 3 COLLECTOR CONTACT W IT H TH E CASE.
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2N3015
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NDS9947
Abstract: G78G
Text: May 1996 National Semiconductor” NDS9947 Dual P-Channel Enhancement Mode Field Effect Transistor Features General Description These P-Channel enhan ce m e n t m o d e pow er field effect tran sisto rs are produced using N ational's proprietary, hig h cell density, DMOS tech no lo g y.
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NDS9947
G78G
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Untitled
Abstract: No abstract text available
Text: g Military 54F379 MOTOROLA Quad Parallel Register With Enable MPO ELECTRICALLY TESTED PER: MIL-M-38510/34109 HUM The 54F379 is a 4-Bit register with a buffered common Enable. This device is similar to the 54F175 but features common Enable rather than common Master Reset.
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54F379
MIL-M-38510/34109
54F379
54F175
t-179
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Untitled
Abstract: No abstract text available
Text: Philips SemIconductors-Signatics Audio/Radio Product« Preliminary specification A stereo continuous calibration DAC CC-DAC GENERAL DESCRIPTION FEATURES The TDA1312/T, which is a voltage driven D/A-converter, is of a new generation of D/A-converters that incorporate the
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TDA1312/T
TDA1312/T,
TDA1312/T
384kHz.
1312/T
UZW-BO/FQ-0601.
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