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Bimba Manufacturing Company PC-041-DBM Cylinder, O.L., Plastic End Caps; 3/4In Bore; Stroke: 1In; F Nose, Bump ,Magnet \| Bimba PC-041-DBM
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
RS	PC-041-DBM	Bulk		5 Weeks	1	1 $102.55 10 $102.55 100 $102.55 1000 $102.55 10000 $102.55	Get Quote
Bimba Manufacturing Company LT-041-DBM Thruster, Linear Thruster Cylinder ; 3/4in Bore ; Stroke: 1 in; Double Acting ; \| Bimba LT-041-DBM
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
RS	LT-041-DBM	Bulk		5 Weeks	1	1 $59.45 10 $59.45 100 $59.45 1000 $59.45 10000 $59.45	Get Quote
Bimba Manufacturing Company PC-041-DBMW Cylinder, O.L., Plastic End Caps; 3/4In Bore; Stroke: 1In; F Nose, Bump ,Magnet \| Bimba PC-041-DBMW
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
RS	PC-041-DBMW	Bulk		5 Weeks	1	1 $108.8 10 $108.8 100 $108.8 1000 $108.8 10000 $108.8	Get Quote
Bimba Manufacturing Company PC-041-DBMT2 Cylinder, O.L., Plastic End Caps; 3/4In Bore; Stroke: 1In; F Nose, Bump ,Magnet \| Bimba PC-041-DBMT2
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
RS	PC-041-DBMT2	Bulk		5 Weeks	1	1 $108.8 10 $108.8 100 $108.8 1000 $108.8 10000 $108.8	Get Quote
Bimba Manufacturing Company LT-041-DBMT1 Thruster, Linear Thruster Cylinder ; 3/4in Bore ; Stroke: 1 in; Double Acting ; \| Bimba LT-041-DBMT1
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
RS	LT-041-DBMT1	Bulk		5 Weeks	1	1 $64.55 10 $64.55 100 $64.55 1000 $64.55 10000 $64.55	Get Quote

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41DBM Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
41dBm Abstract: BX7101 FP7101 TM7101 TN7101 Text: Available as: RF AMPLIFIER MODEL TM7101 TM7101, 4 Pin TO-8 T4 TN7101, 4 Pin Surface Mount (SM3) FP7101, 4 Pin Flatpack (FP4) BX7101,Connectorized Housing (H1) Features Typical Intermodulation Performance at 25 º C ! ! ! ! Second Order Harmonic Intercept Point. +41dBm (Typ.)	Original	TM7101 TM7101, TN7101, FP7101, BX7101 41dBm 41dBm FP7101 TM7101 TN7101	PDF
Untitled Abstract: No abstract text available Text: E-pHEMT AE663 Product Features Application • 500 ~ 4000MHz • GaAs E-pHEMT • 41dBm Output IP3 • 20dB Gain at 900MHz • 29dBm P1 dB • SOT-89 SMT Package • Single +5V Supply • Pb Free / RoHS Standard • Cellular, CDMA,W-CDMA, Wimax Drive or Pre-drive Amplifier	Original	AE663 4000MHz 41dBm 900MHz 29dBm OT-89 OT-89 AE663 4000MHz	PDF
Untitled Abstract: No abstract text available Text: Available as: RF AMPLIFIER TM9135 MODEL TM9135, 4 Pin TO-8 T4 TN9135, 4 Pin Surface Mount (SM3) FP9135, 4 Pin Flatpack (FP4) BX9135, Connectorized Housing (H1) Features Typical Intermodulation Performance at 25 º C Second Order Harmonic Intercept Point.+41dBm (Typ.)	Original	TM9135 TM9135, TN9135, FP9135, BX9135, 41dBm	PDF
TM7101 Abstract: low noise BX7101 FP7101 TN7101 Text: Available as: RF AMPLIFIER MODEL TM7101 TM7101, 4 Pin TO-8 T4 TN7101, 4 Pin Surface Mount (SM3) FP7101, 4 Pin Flatpack (FP4) BX7101,Connectorized Housing (H1) Features Typical Intermodulation Performance at 25 ºC ! ! ! ! Second Order Harmonic Intercept Point. +41dBm (Typ.)	Original	TM7101 TM7101, TN7101, FP7101, BX7101 41dBm TM7101 low noise FP7101 TN7101	PDF
Untitled Abstract: No abstract text available Text: Coaxial Low Noise Ampliﬁer 50Ω ZQL-1900MLNW 1800 to 2000 MHz Features • very low noise, 1.6 dB max. • high IP3, +41dBm typ. • rugged, shielded case Applications • PCS • mobile satellite service • UMTS Connectors SMA CASE STYLE: CW686 Model	Original	41dBm ZQL-1900MLNW CW686 ZQL-1900MLNW	PDF
Untitled Abstract: No abstract text available Text: Product Information ISO 9001 CERTIFIED 6004 5.725 to 5.825 GHz GaAs MMIC U-NII Band Power Amplifier F e a t u rre es ♦ ♦ ♦ ♦ 24 dB Small Signal Gain 28.5dBm Linear Output Power 41dBm Third Order Intercept Point Thermally Efficient Moly-Copper Package	Original	41dBm	PDF
M121747 Abstract: ZQL-1900MLNW ZQL-900MLN ZQL1900MLNW Text: Coaxial Low Noise Amplifier 50Ω ZQL-1900MLNW+ 1800 to 2000 MHz Features • very low noise, 1.6 dB max. • high IP3, +41dBm typ. • rugged, shielded case CASE STYLE: CW686 Connectors Model Price Qty. SMA ZQL-1900MLNW+ $249.00 ea. 1-9 Applications + RoHS compliant in accordance	Original	ZQL-1900MLNW+ 41dBm CW686 2002/95/EC) M121747 ZQL-1900MLNW ZQL-900MLN ZQL1900MLNW	PDF
fet 741 Abstract: P0110002P KP022J P0120002P RR0816 pin details of FET eudyna transistors catalog ic 4075 or gate Text: Technical Note P0120002P 250mW GaAs Power FET Pb-Free Type ♦Features ♦Functional Diagram • Up to 2.7 GHz frequency band · Beyond +22 dBm output power · Up to +41dBm Output IP3 · High Drain Efficiency · 15dB Gain at 2.1GHz · SOT-89 SMT Package (Pb-free)	Original	P0120002P 250mW 41dBm OT-89 P0120002P fet 741 P0110002P KP022J RR0816 pin details of FET eudyna transistors catalog ic 4075 or gate	PDF
KP027J Abstract: P0120007P RR0816 Text: P0120007P Technical Note 250mW GaAs Power FET Pb-Free Type ♦Features ♦Functional Diagram • Up to 2.7 GHz frequency band · Beyond +22 dBm output power · Up to +41dBm Output IP3 · High Drain Efficiency · 15dB Gain at 2.1GHz · SOT-89 SMT Package · Low Noise Figure	Original	P0120007P 250mW 41dBm OT-89 P0120007P KP027J RR0816	PDF
Untitled Abstract: No abstract text available Text: M/A-COM Technology Solutions Inc. 100 Chelmsford Street Lowell, Massachusetts 01851 +1 978.656.2500 macomtech.com PRESS RELEASE MACOM Launches New X-Band High Power Amplifiers for Commercial Radar and Communication Applications Two-stage and three-stage MMIC Amplifiers Boast up to 41dBm of Saturated Pulsed Output Power and 40%	Original	41dBm MAAP-015030 41drized	PDF
Untitled Abstract: No abstract text available Text: RFDA2046 RFDA2046Digital Controlled Variable Gain Amplifier 2000 MHz to 2800 MHz DIGITAL CONTROLLED VARIABLE GAIN AMPLIFIER 2000MHz TO 2800MHz High OIP3/P1dB=+41dBm/ 28dBm  Single +5V Supply  Small 28-Pin, 6.0mmx6.0mm, MCM  Power-up Programming GND	Original	RFDA2046 RFDA2046Digital 2000MHz 2800MHz 28-Pin, 41dBm/ 28dBm GRM155R71C104KA88D GRM155R61A105KE15D RMC1/16SJPTH	PDF
3570 1301 Abstract: 3570 1301 053 3570 1301 051 Text: FMM5822X K-Band Power Amplifier MMIC FEATURES •High Output Power; P1dB = 32.5 dBm Typ. •High Linear Gain; GL = 22 dB(Typ.) •Frequency Band ; 17.5 - 20.0 GHz •High Linearity ; OIP3 = 41dBm •Impedance Matched Zin/Zout = 50Ω Device photo DESCRIPTION	Original	FMM5822X 41dBm FMM5822X 3570 1301 3570 1301 053 3570 1301 051	PDF
3570 1301 054 Abstract: FMM5822X 3570 1301 ED-4701 MTTF class E power amplifier 13.56 40938 power amplifier mmic Text: FMM5822X K-Band Power Amplifier MMIC FEATURES •High Output Power; P1dB = 32.5 dBm Typ. •High Linear Gain; GL = 22 dB(Typ.) •Frequency Band ; 17.5 - 20.0 GHz •High Linearity ; OIP3 = 41dBm •Impedance Matched Zin/Zout = 50Ω DESCRIPTION The FMM5822X is a power amplifier MMIC that contains a three	Original	FMM5822X 41dBm FMM5822X 3570 1301 054 3570 1301 ED-4701 MTTF class E power amplifier 13.56 40938 power amplifier mmic	PDF
BC 547 pnp Abstract: ISO-14001 KP027J P0120002P P0120007P RR0816 Ids2590 toko 4437 Text: P0120007P Technical Note 250mW GaAs Power FET Pb-Free Type ♦Features SUMITOMO ELECTRIC 4 ♦Functional Diagram • Up to 2.7 GHz frequency band · Beyond +22 dBm output power · Up to +41dBm Output IP3 · High Drain Efficiency · 15dB Gain at 2.1GHz · SOT-89 SMT Package	Original	P0120007P 250mW 41dBm OT-89 17GHz KP027J P0120007P BC 547 pnp ISO-14001 KP027J P0120002P RR0816 Ids2590 toko 4437	PDF

Untitled Abstract: No abstract text available Text: RF3315 RF3315Broadband High Linearity Amplifier BROADBAND HIGH LINEARITY AMPLIFIER GND Package Style: SOT89 Features     1 2 3 RF OUT  GND  4 200MHz to 2200MHz +41dBm Output IP3 18dB Gain at 900MHz +25dBm P1dB 2.5dB Typical Noise Figure at	Original	RF3315 RF3315Broadband 200MHz 2200MHz 41dBm 900MHz 25dBm RF3315 DS120530	PDF
Untitled Abstract: No abstract text available Text: E-pHEMT AE663 Product Features Application • 500 ~ 4000MHz • GaAs E-pHEMT • 41dBm Output IP3 • 20dB Gain at 900MHz • 29dBm P1 dB • SOT-89 SMT Package • Single +5V Supply • Pb Free / RoHS Standard • Cellular, CDMA,W-CDMA, Wimax Drive or Pre-drive Amplifier	Original	AE663 4000MHz 41dBm 900MHz 29dBm OT-89 OT-89 AE663 4000MHz	PDF
41dBm Abstract: FPD2250SOT89 Text: EB2250SOT89BC FPD2250SOT89 2.0GHz PA EVALUATION BOARD FEATURES • • ¥ ¥ ¥ Measured @ 2.0GHz 29dBm Output Power 13dB Gain 41dBm IP3 Noise Figure 1.5dB Bias 5V, 50% Idss DESCRIPTION AND APPLICATIONS This evaluation board is a single-ended, dual biased, power amplifier. It is reactively	Original	EB2250SOT89BC FPD2250SOT89 29dBm 41dBm FPD2250SOT89; 2250m 30mil	PDF
FPD3000SOT89 Abstract: No abstract text available Text: EB3000SOT89BB FPD3000SOT89 0.9GHz EVALUATION BOARD FEATURES • • ¥ ¥ ¥ Measured @ 1.85GHz 30dBm Output Power 18dB Gain 1.2dB Noise Figure 41dBm OIP3 @ 22dBm Pout Total Power Bias 5V, 400mA DESCRIPTION AND APPLICATIONS This evaluation board is a single-ended, dual biased, power amplifier. It is reactively	Original	EB3000SOT89BB FPD3000SOT89 85GHz 30dBm 41dBm 22dBm 400mA FPD3000SOT89; 3000m 30mil	PDF
RF Power Amplifier 125KHz Abstract: RFHA5966AX 4500m 1n4148 die GAAS FET AMPLIFIER x-band 10w RFHA5966A x-Band Hemt Amplifier 95GHZ 10Ghz RF Power 10w amplifier "15 GHz" power amplifier 41dBm Text: RFHA5966A RFHA5966AX Band 10W High Power Amplifier GaAs MMIC X BAND 10W HIGH POWER AMPLIFIER GaAs MMIC Die Size: 4500m x 4000m VD1 VD2 Features      20dB Gain +41dBm Saturated Output Power 40% Power Added Efficiency 100% On Wafer DC and RF	Original	RFHA5966AX RFHA5966A 4500m 4000m 41dBm RFHA5966A 1N4148, RF Power Amplifier 125KHz 1n4148 die GAAS FET AMPLIFIER x-band 10w x-Band Hemt Amplifier 95GHZ 10Ghz RF Power 10w amplifier "15 GHz" power amplifier 41dBm	PDF
ED-4701 Abstract: FMM5822X "15 GHz" power amplifier 41dBm power amplifier mmic Text: FMM5822X K-Band Power Amplifier MMIC FEATURES •High Output Power; P1dB = 32.5 dBm Typ. •High Linear Gain; GL = 22 dB(Typ.) •Frequency Band ; 17.5 - 20.0 GHz •High Linearity ; OIP3 = 41dBm •Impedance Matched Zin/Zout = 50Ω DESCRIPTION The FMM5822X is a power amplifier MMIC that contains a three	Original	FMM5822X 41dBm FMM5822X ED-4701 "15 GHz" power amplifier 41dBm power amplifier mmic	PDF
EGN28B200IV-R Abstract: JESD22-A114 S-Band Radar Text: EGN28B200IV-R High Voltage - High Power GaN-HEMT for Radar FEATURES •High Voltage Operation : VDS=50V •High Power : 230W min. @ Pin=12.6W (41dBm) •High Efficiency: 53%(typ.) @ Pin=12.6W (41dBm) DESCRIPTION Sumitomo GaN-HEMT EGN28B100IV-R offers high power, high	Original	EGN28B200IV-R 41dBm) EGN28B100IV-R EGN28B200IV-R JESD22-A114 S-Band Radar	PDF
Untitled Abstract: No abstract text available Text: Coaxial Low Noise Amplifier 50Ω ZQL-1900MLNW 1800 to 2000 MHz Features • very low noise, 1.6 dB max. • high IP3, +41dBm typ. • rugged, shielded case Applications Connectors SMA • PCS • mobile satellite service • UMTS CASE STYLE: CW686 Model Price	Original	41dBm ZQL-1900MLNW CW686 ZQL-1900MLNW	PDF
Untitled Abstract: No abstract text available Text: Coaxial Low Noise Amplifier 50Ω ZQL-1900MLNW 1800 to 2000 MHz Features • very low noise, 1.6 dB max. • high IP3, +41dBm typ. • rugged, shielded case Applications • PCS • mobile satellite service • UMTS Connectors SMA CASE STYLE: CW686 Model Price	Original	41dBm ZQL-1900MLNW CW686 ZQL-1900MLNW	PDF
Untitled Abstract: No abstract text available Text: MITSUBISHI SEMICONDUCTOR GaAs FET MGF0911A L, S BAND POWER GaAs FET DESCRIPTION The MGF0911A, GaAs FET with an N-channel schottky gate, is designed for use in UHF band amplifiers. FEATURES • Class A operation • High output power PidB=41dBm(TYP) @2.3GHz	OCR Scan	MGF0911A MGF0911A, 41dBm	PDF

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41DBM Price and Stock

Bimba Manufacturing Company PC-041-DBM

Bimba Manufacturing Company LT-041-DBM

Bimba Manufacturing Company PC-041-DBMW

Bimba Manufacturing Company PC-041-DBMT2

Bimba Manufacturing Company LT-041-DBMT1

41DBM Datasheets Context Search

41dBm

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TM7101

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M121747

fet 741

KP027J

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3570 1301

3570 1301 054

BC 547 pnp

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41dBm

FPD3000SOT89

RF Power Amplifier 125KHz

ED-4701

EGN28B200IV-R

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