d4218160
Abstract: H1311 4218160LG 5-A70
Text: NEC MOS INTEGRATED CIRCUIT _ _ _ _ _ _ _ mPD42S16160L, 4216160L, 42S18160L, 421816QL 3.3 V OPERATION 16M-BIT DYNAMIC RAM 1M-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE DESCRIPTION The MPD42S16160L, 4216160L, 42S18160L, 4218160L are 1 048 576 w o rd s by 16 bits d yn a m ic CMOS RAMs.
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uPD42S16160L
uPD4216160L
uPD42S18160L
uPD4218160L
16M-BIT
16-BIT,
MPD42S16160L,
4216160L,
42S18160L,
4218160L
d4218160
H1311
4218160LG 5-A70
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT ¿¿PD4 2 S 1 8 1 6 0 L , 4 2 1 8 1 6 0 L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE The ,uPD42S18160L, 4218160L are 1,048, 576 words by 16 bits CMOS dynamic RAMs. The fast page mode and
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16-BIT,
uPD42S18160L
4218160L
PD42S18160L
50-pin
42-pin
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