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    4221 MOSFET Search Results

    4221 MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    4221 MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    10a h-bridge driver

    Abstract: No abstract text available
    Text: ISO 9001 CERTIFIED BY DSCC M.S.KENNEDY CORP. 75 VOLT 8 AMP MOSFET H-BRIDGE PWM MOTOR DRIVER/AMPLIFIER 4221 8170 Thompson Road Cicero, N.Y. 13039 315 699-9201 FEATURES: Low Cost Complete H-Bridge 8 Amp Capability, 75 Volt Maximum Rating Self-contained Smart Lowside/Highside Drive Circuitry


    Original     		PDF MSK4221 10a h-bridge driver

    PWM Four quadrant control

    Abstract: 4221 mosfet 200 Amp bridge mosfet 300 Volt mosfet schematic circuit 4221 transistor datasheet MSK4221 10a h-bridge driver
    Text: ISO 9001 CERTIFIED BY DSCC M.S.KENNEDY CORP. 75 VOLT 8 AMP MOSFET H-BRIDGE PWM MOTOR DRIVER/AMPLIFIER 4221 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 FEATURES: Low Cost Complete H-Bridge 8 Amp Capability, 75 Volt Maximum Rating Self-contained Smart Lowside/Highside Drive Circuitry


    Original     		PDF MSK4221 PWM Four quadrant control 4221 mosfet 200 Amp bridge mosfet 300 Volt mosfet schematic circuit 4221 transistor datasheet MSK4221 10a h-bridge driver

    marking BM

    Abstract: "MARKING BM" 2SJ285 EN4221
    Text: Ordering number:EN4221 P-Channel Silicon MOSFET 2SJ285 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. unit:mm 2091A 0.4 3 0.5 [2SJ285] 0.16 0.95 0.95 2 1.9 2.9 2.5


    Original     		PDF EN4221 2SJ285 2SJ285] marking BM "MARKING BM" 2SJ285 EN4221

    2SJ285

    Abstract: marking BM
    Text: Ordering number:EN4221 P-Channel Silicon MOSFET 2SJ285 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. unit:mm 2091A 0.4 3 0.5 [2SJ285] 0.16 0.95 0.95 2 1.9 2.9 2.5


    Original     		PDF EN4221 2SJ285 2SJ285] 2SJ285 marking BM

    Untitled

    Abstract: No abstract text available
    Text: LTC4221 Dual Hot Swap Controller/ Power Sequencer with Dual Speed, Dual Level Fault Protection FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ U ■ DESCRIPTIO The LTC 4221 is a 2-channel Hot SwapTM controller that allows a board to be safely inserted and removed from a


    Original     		PDF LTC4221 LTC4230 LTC4251 S0T-23 LTC4252 LTC4253 4221fa

    4221 transistor

    Abstract: RX2 0841 G07 15S rx1 1240 hot 95a RX2 0817 WSL25126L000F WSL25126L000 IRF7413 LTC4221
    Text: LTC4221 Dual Hot Swap Controller/ Power Sequencer with Dual Speed, Dual Level Fault Protection U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO The LTC 4221 is a 2-channel Hot SwapTM controller that allows a board to be safely inserted and removed from a


    Original     		PDF LTC4221 LTC4230 LTC4251 S0T-23 LTC4252 LTC4253 4221fa 4221 transistor RX2 0841 G07 15S rx1 1240 hot 95a RX2 0817 WSL25126L000F WSL25126L000 IRF7413 LTC4221

    rx1 1240

    Abstract: resistor 56k 0617 lt 8220 4221 transistor datasheet 8205 A mosfet transistor g25 mosfet 4221 transistor LT 8195
    Text: LTC4221 Dual Hot Swap Controller/ Power Sequencer with Dual Speed, Dual Level Fault Protection U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO The LTC 4221 is a 2-channel Hot SwapTM controller that allows a board to be safely inserted and removed from a


    Original     		PDF LTC4221 LTC4230 LTC4251 S0T-23 LTC4252 LTC4253 4221f rx1 1240 resistor 56k 0617 lt 8220 4221 transistor datasheet 8205 A mosfet transistor g25 mosfet 4221 transistor LT 8195

    Untitled

    Abstract: No abstract text available
    Text: SSE90N10-14 90A , 100V , RDS ON 16m N-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free TO-220P DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on)


    Original     		PDF SSE90N10-14 O-220P O-220P 12-Dec-2011

    Untitled

    Abstract: No abstract text available
    Text: Analog Power AM90N10-14P N-Channel 100-V D-S MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed VDS (V) 100 Typical Applications: • White LED boost converters • Automotive Systems • Industrial DC/DC Conversion Circuits


    Original     		PDF AM90N10-14P AM90N10-14P

    Untitled

    Abstract: No abstract text available
    Text: Analog Power AM7410N N-Channel 100-V D-S MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed VDS (V) 100 PRODUCT SUMMARY rDS(on) (mΩ) 15 @ VGS = 10V 19 @ VGS = 5.5V DFN5X6-8L Typical Applications: • White LED boost converters


    Original     		PDF AM7410N AM7410N

    irf710 datasheet

    Abstract: IRF710 and its equivalent IRF710 TB334
    Text: IRF710 Data Sheet June 1999 2.0A, 400V, 3.600 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of


    Original     		PDF IRF710 O-220AB irf710 datasheet IRF710 and its equivalent IRF710 TB334

    TC4469

    Abstract: TC4404 TC4404COA TC4404CPA TC4404EOA TC4404EPA TC4404MJA TC4405 TC4405COA TC4405CPA
    Text: 1 TC4404 TC4405 1.5A DUAL OPEN-DRAIN MOSFET DRIVERS 2 FEATURES GENERAL DESCRIPTION • ■ ■ ■ ■ ■ The TC4404 and TC4405 are CMOS buffer-drivers constructed with complementary MOS outputs, where the drains of the totem-pole output have been left separated so


    Original     		PDF TC4404 TC4405 TC4404 TC4405 TC4469 TC4469 TC4404COA TC4404CPA TC4404EOA TC4404EPA TC4404MJA TC4405COA TC4405CPA

    ZRA124

    Abstract: ZRA124A01 ZRA124F01 ZRA124N801 ZRA124R01 ZRA124Y01 capacitor 1c5
    Text: PRECISION 1.25 VOLT MICROPOWER VOLTAGE REFERENCE ZRA124 ISSUE 3 - FEBRUARY 1998 DEVICE DESCRIPTION FEATURES The ZRA124 uses a bandgap circuit design to achieve a precision micropower voltage reference of 1.24 volts. The device is available in small outline surface mount


    Original     		PDF ZRA124 ZRA124 ZRA124A01 ZRA124F01 ZRA124N801 ZRA124R01 ZRA124Y01 capacitor 1c5

    h bridg mosfet out

    Abstract: No abstract text available
    Text: ISO 9001 CERTIFIED BY DESC 80 VOLT 10 AMP MOSFET H-BRIDGE PWM MOTOR 8170 T h o m p so n Road 4221 DRIVER/AMPLIFIER M.S. KENNEDY CORP. C ic e ro , N.Y. 13039 31 5 699-9201 FEATURES: Low 10 C o st Am p C o m p le te S e lf-c o n ta in e d Four 80 S m a rt


    OCR Scan     		PDF MSK4221 h bridg mosfet out

    RF1S70N03SM9A

    Abstract: No abstract text available
    Text: RFP70N03, RF1S70N03SM in t e r r ii D ata S h eet 70A, 30V, 0.010 Ohm, N-Channel Power MOSFETs These N-Channel power M O SFETs are manufactured using the M egaFE T process. This process, which uses feature sizes approaching those of LSI integrated circuits gives


    OCR Scan     		PDF RFP70N03, RF1S70N03SM TA49025. 010C2 AN7254 AN7260. RF1S70N03SM9A

    IRF254

    Abstract: No abstract text available
    Text: ^ n a s? ! 2 J H A R R oDsaiafl I • has I R F S 2 5 / R F 2 , I R F 4 5 6 , 2 5 5 / R F 2 5 7 N-Channel Power MOSFETs Avalanche Energy Rated A u g u st 1991 Package Features T O -2 0 4 A E • 22A and 20A, 275V - 250V BOTTOM VIEW • rDS on = 0-14H and 0 .1 7 ii


    OCR Scan     		PDF 0-14H IRF254, IRF255, IRF256, IRF257 RF255, Figure16. IRF254

    TA17444

    Abstract: No abstract text available
    Text: IRF710 Semiconductor Data Sheet June 1999 2.0A, 400V, 3.600 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of


    OCR Scan     		PDF IRF710 O-220AB TA17444

    IRF254

    Abstract: No abstract text available
    Text: SI H ARRIS IRF254, IRF255 IRF256, IRF257 N-Channel Power MOSFETs Avalanche Energy Rated August 1991 Package Features T 0 -2 0 4 A E • 22A and 20A , 2 75 V - 250V BOTTOM VIEW • r o s o n = 0 . 1 4 i l a n d 0 . 1 7 0 SOURCE • S in g le P u ls e A v a la n c h e E n e rg y R a te d


    OCR Scan     		PDF Figure16. IRF254

    Untitled

    Abstract: No abstract text available
    Text: Semiconductor, Inc. TC4404 TC4405 1.5A DUAL OPEN-DRAIN MOSFET DRIVERS FEATURES GENERAL DESCRIPTION • ■ ■ ■ ■ ■ The TC4404 and TC4405 are CMOS buffer-drivers constructed with complementary MOS outputs, where the drains of the totem-pole output have been left separated so


    OCR Scan     		PDF TC4404 TC4405 TC4404 TC4405 V-18V)

    4221 motorola transistor

    Abstract: transistor ba rn S2P02
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet MMSF2P02E Medium Power Surface Mount Products Motorola Preferred Device TMOS Single P-Channel Field Effect Transistors ir M iniM OS™ devices are an advanced series of power MOSFETs which utilize Motorola's TMOS process. These miniature surface


    OCR Scan     		PDF MMSF2P02E 4221 motorola transistor transistor ba rn S2P02

    4221 mosfet

    Abstract: No abstract text available
    Text: ~ Semiconductor, Inc. TC4404 1.5A DUAL OPEN-DRAIN MOSFET DRIVERS FEATURES GENERAL DESCRIPTION • ■ ■ ■ ■ ■ The TC4404 and TC4405 are CMOS buffer-drivers constructed with complementary MOS outputs, where the


    OCR Scan     		PDF TC4404 TC4405 TC4404 TC4405 V-18V) TC4469 4221 mosfet

    4311 mosfet transistor

    Abstract: D 4206 TRANSISTOR transistor D 322 Power MOSFETs D 843 Transistor Transistor irf230 h a 431 transistor MOSFET IRF460 n-channel 4336 742r
    Text: - POWER MOSFETs 4 N-CHANNEL POWER MOSFETs PAGE 2N6755, 2N6756 N-Channel Enhancement-Mode Power Field-Effect Transistors. 2N6757, 2N6758 N-Channel Enhancement-Mode Power Field-Effect Transistors. 4-11 2N6759, 2N6760


    OCR Scan     		PDF 2N6755, 2N6756 2N6757, 2N6758 2N6759, 2N6760 2N6761, 2N6762 2N6763, 2N6764 4311 mosfet transistor D 4206 TRANSISTOR transistor D 322 Power MOSFETs D 843 Transistor Transistor irf230 h a 431 transistor MOSFET IRF460 n-channel 4336 742r

    Untitled

    Abstract: No abstract text available
    Text: May 1996 national Semiconductor~ NDS9958 Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P-Channel enhancement mode • N-Channel 3.5A, 20V, RDS 0N| = 0.10 @ VGS = 10V. power field effect transistors are produced using


    OCR Scan     		PDF NDS9958

    4-221

    Abstract: transistor mosfet n-ch drain current NDS9958 Dual N & P-Channel MOSFET
    Text: National Semiconductor" May 1996 NDS9958 Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS


    OCR Scan     		PDF NDS9958 b501130 0Q400bl 4-221 transistor mosfet n-ch drain current NDS9958 Dual N & P-Channel MOSFET