Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    4310 MOSFET Search Results

    4310 MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    4310 MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SENSITRON SEMICONDUCTOR SPD25D28 TECHNICAL DATA DATASHEET 4310, Rev- DC Solid State Power Controller Module Description: The Solid State Power Controller SSPC Module is a 25 Amp microcontroller-based Solid State Relay designed to be used in Army, Air force and Navy in 28V DC applications. This module has integrated


    Original
    PDF SPD25D28 MIL-STD-1275B, MIL-STD-704F MIL-STD-217F, Vehicles-4/20/04

    sspc

    Abstract: relay aircraft 25A 28V MIL-STD-1275B MIL-W-5088L 217F SN74LVC3G14 14-GAUGE 28V generator aerospace
    Text: SENSITRON SEMICONDUCTOR SPD25D28NT TECHNICAL DATA DATASHEET 4310, Rev D DC Solid State Power Controller Module Description: This Solid State Power Controller SSPC Module is a microcontroller-based Solid State Relay rated up to 25A, designed to be used in 28V DC applications. This module has integrated current sensing with no


    Original
    PDF SPD25D28NT MIL-STD-1275B, MIL-STD-704F MIL-STD-217F, Vehicles-4/20/04 sspc relay aircraft 25A 28V MIL-STD-1275B MIL-W-5088L 217F SN74LVC3G14 14-GAUGE 28V generator aerospace

    MIL-W-5088L

    Abstract: sspc 4310 MOSFET SPD25D28 *4310
    Text: SENSITRON SEMICONDUCTOR SPD25D28 TECHNICAL DATA DATASHEET 4310, Rev- DC Solid State Power Controller Module Description: The Solid State Power Controller SSPC Module is a 25 Amp microcontroller-based Solid State Relay designed to be used in Army, Air force and Navy in 28V DC applications. This module has integrated


    Original
    PDF SPD25D28 MIL-STD-1275B, MIL-STD-704F MIL-STD-217F, Vehicles-4/20/04 MIL-W-5088L sspc 4310 MOSFET SPD25D28 *4310

    DIODE i2t

    Abstract: 450W Mosfet Module
    Text: SENSITRON SEMICONDUCTOR SPDXXD28 SERIES TECHNICAL DATA DATASHEET 4310, Rev C DC Solid State Power Controller Module Description: These Solid State Power Controller SSPC Modules are microcontroller-based Solid State Relays rated up to 25A designed to be used in Army, Air force and Navy in 28V DC applications. These modules have


    Original
    PDF SPDXXD28 SPD5D28: SPD12D28: SPD25D28: DIODE i2t 450W Mosfet Module

    SPD25D28NT

    Abstract: sspc 217F t4 switch 5 pin relay 28vdc drawing circuit diagram of relay 8 pin MIL-W-5088L MIL-STD-1275B 450W Mosfet Module
    Text: SENSITRON SEMICONDUCTOR SPD25D28NT TECHNICAL DATA DATASHEET 4310, Rev D.1 DC Solid State Power Controller Module Description: This Solid State Power Controller SSPC Module is a microcontroller-based Solid State Relay rated up to 25A, designed to be used in 28V DC applications. This module has integrated current sensing with no


    Original
    PDF SPD25D28NT MIL-STD-1275B, MIL-STD-704F MIL-STD-217F, Vehicles-4/20/04 SPD25D28NT sspc 217F t4 switch 5 pin relay 28vdc drawing circuit diagram of relay 8 pin MIL-W-5088L MIL-STD-1275B 450W Mosfet Module

    relay aircraft 20A 28V

    Abstract: SPD25D28 SPD5D28-1 SPD5D28-3 SPD5D28-5 SPDXXD28 relay aircraft 25A 28V
    Text: SENSITRON SEMICONDUCTOR SPDXXD28 SERIES TECHNICAL DATA DATASHEET 4310, Rev B DC Solid State Power Controller Module Description: The Solid State Power Controller SSPC Module is a microcontroller-based Solid State Relay rated upto 25A designed to be used in Army, Air force and Navy in 28V DC applications. This module has integrated


    Original
    PDF SPDXXD28 SPD5D28 SPD5D28-1: SPD5D28-3: SPD5D28-5: SPD15D28 SPD14D28-7: SPD14D28-10: SPD14D28eet relay aircraft 20A 28V SPD25D28 SPD5D28-1 SPD5D28-3 SPD5D28-5 relay aircraft 25A 28V

    EN4310

    Abstract: AX-9832 2SK1921
    Text: Ordering number:EN4310 N-Channel Silicon MOSFET 2SK1921 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. unit:mm 2052C [2SK1921] 10.2 3.6 4.5 5.1 18.0 15.1 6.3 2.7


    Original
    PDF EN4310 2SK1921 2052C 2SK1921] O-220AB EN4310 AX-9832 2SK1921

    car mosfet audio amplifier diagram

    Abstract: mosfet HF amplifier TDA car audio amplifier AM FM TUNER module car Car electronics 5.1 amplifier circuits tda audio amplifier 4320X 4310 SMD IC tetrode smd
    Text: TUA 4310XS / TDA 4320X CAR RADIO Enclosure: figure 1 figure 2 figure 3 figure 4 figure 5 block circuitrys of the ICs schematic diagram of the demoboard partlist for the FM module SO-SMD partside of the pcb partside of the pcb measurement diagrams Integrated Circuits for Consumer Electronics


    Original
    PDF 4310XS 4320X car mosfet audio amplifier diagram mosfet HF amplifier TDA car audio amplifier AM FM TUNER module car Car electronics 5.1 amplifier circuits tda audio amplifier 4320X 4310 SMD IC tetrode smd

    ir 4310

    Abstract: irf7832pbf mj 4310 4310 MOSFET
    Text: PD - 95016A IRF7832PbF HEXFET Power MOSFET Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems l Lead-Free VDSS Benefits l Very Low RDS on at 4.5V VGS l Ultra-Low Gate Impedance


    Original
    PDF 5016A IRF7832PbF EIA-481 EIA-541. ir 4310 irf7832pbf mj 4310 4310 MOSFET

    IRGKI165F06

    Abstract: IRGDDN600M06 IRGDDN600K06 IRF7311 IRGNIN075 IRFK6H054 IRF7601 IRLI2203N IRLML2803 IRLML5103
    Text: Index HEXFET Power MOSFETs Part Number International Rectifier ID R DS on V(BR)DSS Continuous On-State Drain-to-Source Drain Current Breakdown Voltage Resistance 25°C (Ω) (A) (V) ID Continuous Drain Current 70°C (A) RθJ A Max Thermal Resistance (°C/W)


    Original
    PDF OT-23) IRLML2402* IRLML2803 IRLML5103 IRLML6302* IRGKI165F06 IRGDDN600M06 IRGDDN600K06 IRF7311 IRGNIN075 IRFK6H054 IRF7601 IRLI2203N IRLML2803 IRLML5103

    FDA24N50F

    Abstract: No abstract text available
    Text: UniFETTM FDA24N50F N-Channel MOSFET 500V, 24A, 0.2 Features Description • RDS on = 0.166 ( Typ.)@ VGS = 10V, ID = 12A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original
    PDF FDA24N50F FDA24N50F

    4311 mosfet transistor

    Abstract: transistor tl 4311 IRFP140 TA17421 TB334
    Text: IRFP140 Data Sheet July 1999 31A, 100V, 0.077 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of


    Original
    PDF IRFP140 TA17421. 4311 mosfet transistor transistor tl 4311 IRFP140 TA17421 TB334

    fda24n50f

    Abstract: A1872 ir 4310
    Text: UniFETTM FDA24N50F tm N-Channel MOSFET 500V, 24A, 0.2Ω Features Description • RDS on = 0.166Ω ( Typ.)@ VGS = 10V, ID = 12A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original
    PDF FDA24N50F FDA24N50F A1872 ir 4310

    Untitled

    Abstract: No abstract text available
    Text: PD - 97205A AUTOMOTIVE MOSFET IRF3805S-7PPbF IRF3805L-7PPbF Features l l l l l l HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free D VDSS = 55V


    Original
    PDF 7205A IRF3805S-7PPbF IRF3805L-7PPbF IRF3805S/L-7PPbF O-263CA

    Irf 1540 N

    Abstract: Irf 1540 G MOSFET IRF 1540 IRF3805S-7P IRF 4310 AN-994 L0043 IRF3805S mj 4310
    Text: PD - 96904 AUTOMOTIVE MOSFET IRF3805S-7P HEXFET Power MOSFET Features l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax D VDSS = 55V RDS on = 2.6mΩ‰ G ID = 160A


    Original
    PDF IRF3805S-7P Irf 1540 N Irf 1540 G MOSFET IRF 1540 IRF3805S-7P IRF 4310 AN-994 L0043 IRF3805S mj 4310

    IRF 4310

    Abstract: IRF3805S-7P mj 4310 AN-994 IRF3805S L0043
    Text: PD - 96904A AUTOMOTIVE MOSFET IRF3805S-7P HEXFET Power MOSFET Features l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax D VDSS = 55V RDS on = 2.6mΩ‰ G ID = 160A


    Original
    PDF 6904A IRF3805S-7P IRF 4310 IRF3805S-7P mj 4310 AN-994 IRF3805S L0043

    irf3805s

    Abstract: AN-994 mj 4310 L0043 irf3805l-7p IRF3805L IRF3805L-7PPBF IRF3805S-7P
    Text: PD - 97205A AUTOMOTIVE MOSFET IRF3805S-7PPbF IRF3805L-7PPbF Features l l l l l l HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free D VDSS = 55V


    Original
    PDF 7205A IRF3805S-7PPbF IRF3805L-7PPbF IRF3805S/L-7PPbF O-263CA irf3805s AN-994 mj 4310 L0043 irf3805l-7p IRF3805L IRF3805L-7PPBF IRF3805S-7P

    Untitled

    Abstract: No abstract text available
    Text: PD - 96904A AUTOMOTIVE MOSFET IRF3805S-7P HEXFET Power MOSFET Features l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax D VDSS = 55V RDS on = 2.6mΩ‰ G S


    Original
    PDF 6904A IRF3805S-7P

    FDA24N50F

    Abstract: mj 4310
    Text: UniFETTM FDA24N50F tm N-Channel MOSFET 500V, 24A, 0.2Ω Features Description • RDS on = 0.166Ω ( Typ.)@ VGS = 10V, ID = 12A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original
    PDF FDA24N50F FDA24N50F mj 4310

    IRF 4310

    Abstract: irf7832
    Text: PD - 94594E IRF7832 HEXFET Power MOSFET Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems VDSS Benefits l Very Low RDS on at 4.5V VGS l Ultra-Low Gate Impedance


    Original
    PDF 94594E IRF7832 EIA-481 EIA-541. IRF 4310 irf7832

    IRF7832

    Abstract: No abstract text available
    Text: PD - 94594C IRF7832 HEXFET Power MOSFET Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems VDSS Benefits l Very Low RDS on at 4.5V VGS l Ultra-Low Gate Impedance


    Original
    PDF 94594C IRF7832 EIA-481 EIA-541. IRF7832

    Untitled

    Abstract: No abstract text available
    Text: IRFP140 S em iconductor D ata S h eet Ju ly 1999 31 A, 100V, 0.077 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of


    OCR Scan
    PDF IRFP140 O-247

    IRF 4310

    Abstract: ir 4310 IRF621R
    Text: J2 H A R R IS IR F 620/621/6 2 2 /6 2 3 IR F620R /621R /622R /623R N -C hannel Power MOSFETs Avalanche Energy Rated* August 1991 Package Features T O -2 2 0 A B TOP VIEW • 4.0A and 5.0A, 1S0V - 200V • •-D S o n = 0 . 8 0 a n d 1 . 2 f l DRAIN (FLANGE)


    OCR Scan
    PDF F620R /621R /622R /623R IRF620, IRF621, IRF622, IRF623 IRF620R, IRF621R, IRF 4310 ir 4310 IRF621R

    1RF620

    Abstract: No abstract text available
    Text: • 4302571 0054013 HARRIS lib ■ HAS IR F 620/6 21/6 2 2/6 2 3 IRF62 OR/621R /622R /623R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Features Package T O -2 2 0 A B • 4.0A and 5.0A, 150V - 200V T O P VIE W • fDS on = O.Bii and 1.20 • Single Pulse Avalanche Energy Rated*


    OCR Scan
    PDF IRF62 OR/621R /622R /623R IRF620, IRF621, IRF622, IRF623 IRF620R, IRF621R, 1RF620