Untitled
Abstract: No abstract text available
Text: R-Series Carbon Film Fixed Resistor y iabilit logy • Rel y t Techno i l a n via w Qu o t-D Cos Specifications Per R-Series • IEC 115-1 115-4 • MIL R-10509 • DIN 44051 44052 d H L Features D • Conformal multi-layer coating flame proof coating available
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R-10509
MIL-STD-202
30minutes,
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Untitled
Abstract: No abstract text available
Text: IG Ignition Fixed Resistor y iabilit logy • Rel y t Techno i l a n via w Qu o t-D Cos Specifications Per • IEC 115-1 115-4 • MIL R-10509 • DIN 44051 44052 IG d H L Features D • Special coating technique to ensure fast ignition • Color code per MIL & EIA standards
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R-10509
MIL-STD-202
30minutes,
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61558-2-6
Abstract: MYRRA 44051 CURRENT TRANSFORMER myrra 44058 an 44050 en 61558 transistor 9-t VOLTAGE TRANSFORMER datasheet of transformer of va rating 28
Text: Protection Reference 44049 44050 44051 44052 44053 44054 44055 44056 44057 44058 44059 44060* PRIMARY VOLTAGE Secondary Secondary No-load voltage Current voltage V mA V 6 167 8,6 9 111 12,9 12 83 17,2 15 67 21,6 18 56 25,9 24 42 37,9 2x6 2 x 83 2 x 8,6 2x9
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Untitled
Abstract: No abstract text available
Text: Inductive sensor NI4-M12-AD4X • Threaded barrel, M12 x 1 ■ Chrome-plated brass ■ DC 2-wire, 10…65 VDC ■ NO contact ■ Cable connection Wiring diagram Type code Ident no. NI4-M12-AD4X 44052 Rated operating distance Sn Mounting condition Assured sensing range
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NI4-M12-AD4X
BST-12B
MW-12
BSS-12
2013-07-13T12
D-45472
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Untitled
Abstract: No abstract text available
Text: R-series Carbon Film Fixed Resistor Specifications Per ● IEC 115-1 115-4 ● MIL R-10509 ● DIN 44051 44052 Features ● Conformal Multi-layer Coating ● Color Code Per MIL & EIA Standards ● Special Tin Plated Electrolytic Copper Lead Wire Dimensions:
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R-10509
1000Pcs
260oC
MIL-STD-202
125oC
-55oC
30minutes,
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RA55H4452M
Abstract: No abstract text available
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA55H4452M RoHS Compliance , 440-520MHz 55W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA55H4452M is a 55-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 440- to
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RA55H4452M
440-520MHz
RA55H4452M
55-watt
520-MHz
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RA13H4452M
Abstract: RA13H4452M-101
Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA13H4452M RoHS Compliance , 440-520MHz 13W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA13H4452M is a 13-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 440- to
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RA13H4452M
440-520MHz
RA13H4452M
13-watt
520-MHz
RA13H4452M-101
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RA45H4452M
Abstract: RA45H4452M-101
Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA45H4452M RoHS Compliance , 440-520MHz 45W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA45H4452M is a 45-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 440- to
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RA45H4452M
440-520MHz
RA45H4452M
45-watt
520-MHz
RA45H4452M-101
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RA07M4452M
Abstract: generator 4.20 mA
Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RA07M4452 RA07M4452M 07M4452MSA OBSERVE HANDLING PRECAUTIONS RoHS Compliance , 440-520MHz 7.0W 7.2V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07M4452MSA is a 7-watt RF MOSFET Amplifier
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RA07M4452M
RA07M4452MSA
07M4452
440-520MHz
RA07M4452MSA
520-MHz
RA07M4452M
generator 4.20 mA
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RA60H4047M1
Abstract: RA60H4452M1
Text: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-UHF-078-B Date : 26th Sep. 2006 Rev. date : 22th Jun. 2010 Prepared : K. Mori Confirmed : S.Kametani Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: Electro Static Sensitivity for RA60H4452M1 and RA60H4047M1
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AN-UHF-078-B
RA60H4452M1
RA60H4047M1
RA60H4047M1
RA60H4047M1.
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ITT Cannon Connectors FCI 851 Series
Abstract: NATC06 SBP-15 MS3456 TORQUE 440072 620-053
Text: Circular Connector Backshells and Accessories U n i t e d S t a t e s U n i t e d K i n g d o m G e r m a n y F r a n c e N o r d i c I t a l y Spain Introducing the "NESTOR" AS85049 Style "N" Coupling Spring-Loaded, Positive-Lock Backshells
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AS85049
ITT Cannon Connectors FCI 851 Series
NATC06
SBP-15
MS3456 TORQUE
440072
620-053
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RA07N4452M
Abstract: RF MOSFET MODULE RA07N4452
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA07N4452M RoHS Compliance , 440-520MHz 7.5W 9.6V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07N4452M is a 7.5-watt RF MOSFET Amplifier Module for 9.6-volt portable radios that operate in the 440- to
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RA07N4452M
440-520MHz
RA07N4452M
520-MHz
RF MOSFET MODULE
RA07N4452
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RA13H4452M-01
Abstract: hatfield attenuator MITSUBISHI RF module RF MOSFET MODULE RA13H4452M RA13H4452M-E01 RF POWER amplifier 10 watt
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA13H4452M 440-520MHz 13W 12.5V MOBILE RADIO DESCRIPTION The RA13H4452M is a 13-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 440- to 520-MHz
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RA13H4452M
440-520MHz
RA13H4452M
13-watt
520-MHz
RA13H4452M-01
hatfield attenuator
MITSUBISHI RF module
RF MOSFET MODULE
RA13H4452M-E01
RF POWER amplifier 10 watt
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RA07M4452MSA
Abstract: RA07M
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA07M4452MSA RoHS Compliance , 440-520MHz 7.0W 7.2V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07M4452MSA is a 7-watt RF MOSFET Amplifier Module for 7.2-volt portable radios that operate in the 440- to
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RA07M4452MSA
440-520MHz
RA07M4452MSA
520-MHz
RA07M
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CR16
Abstract: CR16A CR16B CR32
Text: CompactRISC CR16 Development Toolset Beta Version 2.0 Release Letter Part Number: 433521772-001 January 1998 1998 National Semiconductor Corporation ii PREFACE This release letter describes the CompactRISC Development Toolset, Version 2.0, for the
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CR16A/B
CR16
CR16A
CR16B
CR32
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Untitled
Abstract: No abstract text available
Text: CompactRISC Debugger Communication Interface DbgCom Beta Version 0.80 Release Letter Part Number: 433521771-001 August 1998 PREFACE This release letter describes the Debugger Communication Interface (DbgCom) Beta Version 0.80 for CompactRISC debuggers.
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RA07H4452M
Abstract: RA07H4452M-01
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA07H4452M 440-520MHz 7W 12.5V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07H4452M is a 7-watt RF MOSFET Amplifier Module for 12.5-volt portable radios that operate in the 440- to 520-MHz
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RA07H4452M
440-520MHz
RA07H4452M
520-MHz
RA07H4452M-01
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RA30H4452M
Abstract: RA30H4452M-01 RA30H4452M-E01
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA30H4452M 440-520MHz 30W 12.5V MOBILE RADIO DESCRIPTION The RA30H4452M is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 440- to
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RA30H4452M
440-520MHz
RA30H4452M
30-watt
520-MHz
RA30H4452M-01
RA30H4452M-E01
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PC87307
Abstract: PC97307 PC87307EB PC87307/PC97307
Text: SuperI/O PC97307-IBW/EB Release Letter Part Number: 433521688-701 February 1998 2 1998 National Semiconductor Corporation PREFACE This release letter describes the PC97307-IBW Evaluation Board PC97307-IBW/EB , which is designed to verify the I/O functions of the PC97307-IBW/VUL chip.
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PC97307-IBW/EB
PC97307-IBW
PC97307-IBW/EB)
PC97307-IBW/VUL
PC87307EB
PC87307
PC97307
PC87307/PC97307
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RA60H4047M1
Abstract: mitsubishi bipolar rf power RA60H4452M1 mitsubishi rf
Text: MITSUBISHI RF POWER SEMICONDUCTORS APPLICATION NOTE Document NO. AN-UHF-078 Date : 26th Sep. 2006 Prepared : K. Mori Confirmed : S.Kametani SUBJECT: Electro Static Sensitivity for RA60H4452M1 and RA60H4047M1 GENERAL: RA60H4452M1 and RA60H4047M1 use MOS FET device.
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AN-UHF-078
RA60H4452M1
RA60H4047M1
RA60H4047M1
RA60H4047M1.
mitsubishi bipolar rf power
mitsubishi rf
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Untitled
Abstract: No abstract text available
Text: Three Phase Filters 440-520Vac 8-450 Amps F.LL.D3.*A.AN/HN. *1 series Industrial Applications Description Mechanical Specification Electrical Specifications Rated Voltage VR : ‘AN’: 440Vac, 50/60Hz at 40˚C ‘HN’: 520Vac, 50/60Hz at 40˚C Leakage Current(IL) : At VR/ √3, 50Hz, max value
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440-520Vac
440Vac,
50/60Hz
520Vac,
1700Vdc
3200Vdc
3470Vdc
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Untitled
Abstract: No abstract text available
Text: <Silicon RF Power Modules > RA55H4452M RoHS Compliance , 440-520MHz 55W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA55H4452M is a 55-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 440- to 520-MHz range. The battery can be connected directly to the drain of the
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RA55H4452M
440-520MHz
RA55H4452M
55-watt
520-MHz
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PIHER 326 M
Abstract: RLR20 resistors
Text: Fixed resistors OI PIHER GLC CM ." Series V2 Watt Carbon Film Resistors • New in the range o f carbon film resistors, the G L O -O H M offers an increased d issip a tio n of 0.5 W 70°C by using a newly form ula ted ceram ic nucleus. % Electrical Characteristics
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OCR Scan
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RLR20
IEC-68)
RS-196)
R-39017C.
R-39017C
R-39017C
IEC-195
Quan-Tech315-B
F-208
PIHER 326 M
RLR20 resistors
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SIEMENS BB409
Abstract: bb409
Text: SIEMENS AKTIENGESELLSCHAF bOE » • fi23SbOS 0051403 547 « S I E G SIEMENS 7 Dioden Diodes Varaktor- Tuner- Dioden Varactor (Tuning) Diodes Type Characteristics ( 7 a = 25°C) Cj at Vpj V pF Cj pF at VR V ^Ratio ca Maximum Ratings Wt h V mA Package Lead SMD/
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fi23SbOS
BB419
OD-123
BB409
BB439
OD-323
BB512
BB515
SIEMENS BB409
bb409
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