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    4421 MOSFET Search Results

    4421 MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    4421 MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    NTC 100-11

    Abstract: NTC 10010 NTC 100-11 circuit diagram NR3015T1R0N LPS6225-222ML LPS4018-222ML NR4018T2R2
    Text: 19-4421; Rev 1; 5/09 KIT ATION EVALU LE B A IL A AV Adaptive Step-Up Converters with 1.5A Flash Driver The MAX8834Y/MAX8834Z flash drivers integrate a 1.5A PWM DC-DC step-up converter and three programmable low-side, low-dropout LED current regulators. The step-up converter features an internal


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    MAX8834Y/MAX8834Z regulato34Y/MAX8834Z NTC 100-11 NTC 10010 NTC 100-11 circuit diagram NR3015T1R0N LPS6225-222ML LPS4018-222ML NR4018T2R2 PDF

    Untitled

    Abstract: No abstract text available
    Text: 19-4421; Rev 2; 2/10 KIT ATION EVALU LE B A IL A AV Adaptive Step-Up Converters with 1.5A Flash Driver The MAX8834Y/MAX8834Z flash drivers integrate a 1.5A PWM DC-DC step-up converter and three programmable low-side, low-dropout LED current regulators. The step-up converter features an internal


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    MAX8834Y/MAX8834Z PDF

    NTC 100-11

    Abstract: NTC 100-11 circuit diagram 2578-4 1117AS LPS4018-222ML max8834 809R
    Text: 19-4421; Rev 2; 2/10 KIT ATION EVALU LE B A IL A AV Adaptive Step-Up Converters with 1.5A Flash Driver The MAX8834Y/MAX8834Z flash drivers integrate a 1.5A PWM DC-DC step-up converter and three programmable low-side, low-dropout LED current regulators. The step-up converter features an internal


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    MAX8834Y/MAX8834Z NTC 100-11 NTC 100-11 circuit diagram 2578-4 1117AS LPS4018-222ML max8834 809R PDF

    NTC 100-11 circuit diagram

    Abstract: NTC 100-11 3.7v 1500mA battery LPS6225-222ML LPS4018-222ML 125000M
    Text: 19-4421; Rev 0; 4/09 KIT ATION EVALU LE B A IL A AV Adaptive Step-Up Converters with 1.5A Flash Driver The MAX8834Y/MAX8834Z flash drivers integrate a 1.5A PWM DC-DC step-up converter and three programmable low-side, low-dropout LED current regulators. The step-up converter features an internal


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    MAX8834Y/MAX8834Z MAX8834Y/MAX8834Z NTC 100-11 circuit diagram NTC 100-11 3.7v 1500mA battery LPS6225-222ML LPS4018-222ML 125000M PDF

    NTC 100-11

    Abstract: NTC 100-11 circuit diagram 2766v LPS4018-222ML led constant current driver 700mA LPS331 NR4010 spur LPS4018-102ML w202a22
    Text: 19-4421; Rev 2; 2/10 KIT ATION EVALU LE B A IL A AV Adaptive Step-Up Converters with 1.5A Flash Driver The MAX8834Y/MAX8834Z flash drivers integrate a 1.5A PWM DC-DC step-up converter and three programmable low-side, low-dropout LED current regulators. The step-up converter features an internal


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    MAX8834Y/MAX8834Z NTC 100-11 NTC 100-11 circuit diagram 2766v LPS4018-222ML led constant current driver 700mA LPS331 NR4010 spur LPS4018-102ML w202a22 PDF

    TH 2267

    Abstract: AN7254 AN9321 AN9322 RFD16N05 RFD16N05SM RFD16N05SM9A TB334
    Text: RFD16N05, RFD16N05SM Data Sheet 16A, 50V, 0.047 Ohm, N-Channel Power MOSFETs The RFD16N05 and RFD16N05SM N-channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon,


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    RFD16N05, RFD16N05SM RFD16N05 RFD16N05SM TA09771. TH 2267 AN7254 AN9321 AN9322 RFD16N05SM9A TB334 PDF

    half bridge MC34067

    Abstract: EB205 MC34076 test circuit MBR20200 motorola 1n4747 dl128 half bridge resonant converter 77208 EB-205 MBR20200
    Text: MOTOROLA Order this document by EB205/D SEMICONDUCTOR ENGINEERING BULLETIN EB205 Motorola GaAs Rectifiers Offer High Efficiency in a 1 MHz, 400 to 48 Volt DC-DC Converter By Scott Deuty Motorola Inc. in telecommunications and mainframe computer applications.


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    EB205/D EB205 EB205 EB205/D* half bridge MC34067 MC34076 test circuit MBR20200 motorola 1n4747 dl128 half bridge resonant converter 77208 EB-205 MBR20200 PDF

    APT9403

    Abstract: 3000-4-CMD5005 mosfet power hf 1kw CMD5005 APT9302 RC07 768XT188 AP031HV Class B power amplifier, 13.56MHz 13.56Mhz class e power amplifier
    Text: APT9403 By: Kenneth Dierberger Simple and Inexpensive High-Efficiency Power Amplifier Using New APT MOSFETs Presented at RF Expo East November 1994 Simple and Inexpensive High-Efficiency Power Amplifier Using New APT MOSFETs Kenneth Dierberger Applications Engineering Manager


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    APT9403 APT9403 3000-4-CMD5005 mosfet power hf 1kw CMD5005 APT9302 RC07 768XT188 AP031HV Class B power amplifier, 13.56MHz 13.56Mhz class e power amplifier PDF

    advantages and disadvantage max232

    Abstract: uart PIC16F628 Triac tesla TC442X op amp c812 pickit 2 pic16F628 Q6X3 pic16f628 PWM LC resonant PIC16F62* comparator
    Text: AN232 Low-Frequency Magnetic Transmitter Design Author: Ruan Lourens Microchip Technology Inc. INTRODUCTION Low-frequency magnetic communications LFMC is a viable “wireless” communications alternative to traditional radio frequency (RF) or infrared communications. It is well suited for certain applications when


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    AN232 DS00232B-page advantages and disadvantage max232 uart PIC16F628 Triac tesla TC442X op amp c812 pickit 2 pic16F628 Q6X3 pic16f628 PWM LC resonant PIC16F62* comparator PDF

    uart PIC16F628

    Abstract: pwm de PIC16F628 advantages and disadvantage max232 DS00232A TC442X pic microcontroller triac control AN232 pic16f628 PWM full bridge LC resonant 3 phase pwm pic16f628
    Text: AN232 Low Frequency Magnetic Transmitter Design Author: Ruan Lourens Microchip Technology Inc. INTRODUCTION Low frequency magnetic communications LFMC is a viable “wireless” communications alternative to traditional radio frequency (RF) or Infrared communications. It is well suited for certain applications when


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    AN232 D-85737 DS00232A-page uart PIC16F628 pwm de PIC16F628 advantages and disadvantage max232 DS00232A TC442X pic microcontroller triac control AN232 pic16f628 PWM full bridge LC resonant 3 phase pwm pic16f628 PDF

    Untitled

    Abstract: No abstract text available
    Text: M iere / M IC 4421/4422 MIC4421/4422 9A-Peak Low-Side MOSFET Driver Bipolar/CMOS/DMOS Process General Description Features MIC4421 and MIC4422 MOSFET drivers are rugged, effi­ cient, and easy to use. The MIC4421 is an inverting driver, while the MIC4422 is a non-inverting driver.


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    MIC4421/4422 MIC4421 MIC4422 000pF O-220 T0-220 PDF

    MAR 544 MOSFET TRANSISTOR

    Abstract: 4422
    Text: MIC4421/4422 9A-Peak Low-Side MOSFET Driver Bipolar/CMOS/DMOS Process General Description Features BiCMOS/DMOS Construction Latch-Up Proof: Fully Isolated Process is Inherently Immune to Any Latch-up. Input Will Withstand Negative Swing of Up to 5V Matched Rise and Fall T im es.25ns


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    MIC4421/4422 MIC4421 MIC4422 MIC4421/4422 MAR 544 MOSFET TRANSISTOR 4422 PDF

    Untitled

    Abstract: No abstract text available
    Text: M IC 4 4 2 1 /4 4 2 2 9A High-Speed High-Current MOSFET Driver Bipolar/CMOS/DMOS Process Features General Description BiCM O S/DM O S Construction Latch-Up Proof: Fully Isolated Process is Inherently Immune to Any Latch-up. Input W ill W ithstand Negative Swing of Up to 5V


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    000pF PDF

    Untitled

    Abstract: No abstract text available
    Text: RFD16N05, RFD16N05SM S e m iconductor Data Sheet 16A, 50 V, 0.047 Ohm, N-Channel Power MOSFETs The RFD16N05 and RFD16N05SM N-channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon,


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    RFD16N05, RFD16N05SM RFD16N05 RFD16N05SM TA09771. 047i2 PDF

    fd320

    Abstract: No abstract text available
    Text: 2 HARRIS IRFD320/321/322/323 IRFD320R/321R/322R/323R N-Channel Power MOSFETs Avalanche Energy Rated* A u g u st 1991 Features Package 4-P IN DIP • 0.5A and 0.4A, 350V - 400V TOP VIEW • rDS(on = 1-8n and 2 .5 fi • Single Pulse Avalanche Energy Rated*


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    IRFD320/321/322/323 IRFD320R/321R/322R/323R IRFD320, IRFD332, IRFD322, IRFD323 IRFD320R, IRFD332R, IRFD322R, IRFD323R fd320 PDF

    WALMSLEY MICROSYSTEMS

    Abstract: STA10 "matched transistor" STA10 transistor is4128 CMOS spice model "magnetic tape"
    Text: ttjM a Walmsley BlHm §IH!EET M ICRO SYSTEM S LIM ITED STA10 MIXED ANALOGUE/DIGITAL CMOS ARRAY The STA10 is a sim ple mixed analogue/digital CMOS com ponent array ASIC specifically designed for very low cost applications. A single layer of m etal is used to interconnect the predefined com ponents in the array


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    STA10 STA10 WALMSLEY MICROSYSTEMS "matched transistor" STA10 transistor is4128 CMOS spice model "magnetic tape" PDF

    MIC4421BN

    Abstract: No abstract text available
    Text: MIC4421/4422 9A Low-Side MOSFET Driver Bipolar/CMOS/DMOS Process General Description Features BiCMOS/DMOS Construction Latch-Up Proof: Fully Isolated Process is Inherently Immune to Any Latch-up. Input Will Withstand Negative Swing of Up to 5V Matched Rise and Fall T im e s.25ns


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    MIC4421/4422 MIC4421 MIC4422 MIC4421/4422 IC4421/4422 MIC4421BN PDF

    soic-8 125c 3 volt switch

    Abstract: how to drive dc MIC4422AJB 4422 dc power supply using TL494 power supply switching
    Text: M IC 4 4 2 1 /4 4 2 2 9A High-Speed High-Current MOSFET Driver Bipolar/CMOS/DMOS Process G eneral Description Features MIC4421 and MIC4422 MOSFET drivers are rugged, effi­ cient, and easy to use. The MIC4421 is an inverting driver, while the MIC4422 is a non-inverting driver.


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    MIC4421 MIC4422 MIC4421/4422 MIC4421/4422 soic-8 125c 3 volt switch how to drive dc MIC4422AJB 4422 dc power supply using TL494 power supply switching PDF

    MOSFET 4418

    Abstract: low voltage power transistor 33n 10e 33n10e mosfet 4419 4418 mosfet S 170 MOSFET TRANSISTOR
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTB33N10E TMOS E-FET ™ High Energy Power FET D2PAK for Surface Mount Motorola Preferred Device TMOS POWER FET 33 AMPERES 100 VOLTS RDS on - 0.06 OHM N-Channel Enhancement-Mode Silicon Gate


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    0E-05 0E-04 0E-03 0E-02 0E-01 35Cms MOSFET 4418 low voltage power transistor 33n 10e 33n10e mosfet 4419 4418 mosfet S 170 MOSFET TRANSISTOR PDF

    Untitled

    Abstract: No abstract text available
    Text: r r u n _ LTC1314/LTC1315 m TECHNOLOGY PCMCIA Switching Matrix with Built-In N-Channel Vcc Switch Drivers K fìT U R C S D € S C R IP T IO n • Output Current Capability: 120 m A ■ External 12 V Regulator Can Be Shut Down ■ Built-In N-Channel V cc Switch Drivers


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    LTC1314/LTC1315 1314/LTC1315 LTC1315 PDF

    Untitled

    Abstract: No abstract text available
    Text: HIP6015 HARRIS S E M I C O N D U C T O R PRELIMINARY Buck Pulse-Width Modulator PWM Controller and Output Voltage Monitor October 1997 Features Description • Drives N-Channel MOSFET The HIP6015 provides complete control and protection for a DC-DC converter optimized for high-performance micropro­


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    HIP6015 HIP6015 1-800-4-HARRIS PDF

    Untitled

    Abstract: No abstract text available
    Text: unm LTC1149-3.3/LTC TM9-5 TECHNOLOGY High Efficiency Synchronous Step-Down Switching Regulators F€flTUR€S DCSCRIPTIOn • Operation to 48V Input Voltage ■ Ultra High Efficiency: Up to 95% ■ Current-Mode Operation for Excellent Line and Load Transient Response


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    LTC1149-3 16-Pin LTC1149 e-KI168M LR2512-01-R040-G LR2010-01-R050-G D01043Ã LTC1149 3/LTC1149-5 PDF

    cqx 87

    Abstract: germanium AEG Thyristor T 558 F TDA 2516 bu208 bf506 la 4430 BF963 TDA1086 transistor bf 175
    Text: Page Contents Diodes 8 Transistors 15 Optoelectronic Devices 24 Integrated Circuits 33 1 Contents, alpha-numeric Type Page AA 112 AA113 AA117 AA 118 AA119 AA 132 AA 133 AA 134 AA 137 AA 138 12 12 8 12 12 8 8 8 12 12 BA 111 BA 121 BA 124 BA 125 BA 147/. BA 157


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    AA113 AA117 AA119 BAV17 BAV18 BAV19 BAV20 BAV21 cqx 87 germanium AEG Thyristor T 558 F TDA 2516 bu208 bf506 la 4430 BF963 TDA1086 transistor bf 175 PDF

    FZH 191

    Abstract: FZJ 101 FZH 261 fzh 111 fzh 171 FZH111 FZH 101 FZH 161 fzh 141 fzh 281
    Text: Elektronik. Wir bauen die Elemente. • VflLVO Professionelle Integrierte Schaltungen, Mikroprozessoren Produktprogramm Elektronik. Wir bauen die Elemente Unser Arbeitsgebiet - besonders die M ikroelektronik - entwickelt sich im m er rascher zum M otor für eine


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    Integrie8510. FZH 191 FZJ 101 FZH 261 fzh 111 fzh 171 FZH111 FZH 101 FZH 161 fzh 141 fzh 281 PDF