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    4430 MOSFET Search Results

    4430 MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    4430 MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BRIDGE RECTIFIER TOSHIBA 3B

    Abstract: LT3748 LT4430ES6 mosfet 4430 Current-doubler 4430 transistor FG 5.5V 0.47F PA0785 LT4430 tapped inductor high voltage buck converter
    Text: LT4430 Secondary-Side Opto-Coupler Driver FEATURES DESCRIPTION n The LT 4430 drives the opto-coupler that crosses the galvanic barrier in an isolated power supply. The IC contains a precision-trimmed reference, a high bandwidth error amplifier, an inverting gain of 6 stage to drive the optocoupler and unique overshoot control circuitry.


    Original     		PDF LT4430 600mV LTC3805/LTC3805-5 70KHz 700kHz) MSOP-10E DFN-10 LT3748 MSOP-16 LT3758 BRIDGE RECTIFIER TOSHIBA 3B LT3748 LT4430ES6 mosfet 4430 Current-doubler 4430 transistor FG 5.5V 0.47F PA0785 LT4430 tapped inductor high voltage buck converter

    BRIDGE RECTIFIER TOSHIBA 3B

    Abstract: Optocoupler 601 lt30 transistor sharp flyback schematic Ceramic Resistor 82K 5W 4430 4430 transistor flyback 200w LTC3723-2 Current-doubler rectifier
    Text: LT4430 Secondary-Side Optocoupler Driver U FEATURES • ■ ■ ■ ■ ■ ■ DESCRIPTIO 600mV Reference 1.25% Over Temperature Wide Input Supply Range: 3V to 20V Overshoot Control Function Prevents Output Overshoot on Startup and Short-Circuit Recovery


    Original     		PDF LT4430 600mV 200kHz LT3804 LTC3900 LTC3901 4430f BRIDGE RECTIFIER TOSHIBA 3B Optocoupler 601 lt30 transistor sharp flyback schematic Ceramic Resistor 82K 5W 4430 4430 transistor flyback 200w LTC3723-2 Current-doubler rectifier

    mosfet 4430

    Abstract: schematic diagram 72v to 12v converter lt30 transistor flyback converter 12v to 18v linear opto coupler LT4430ES6 LTC3722-2 opto coupler 2kw full bridge converter design 4430 transistor
    Text: LT4430 Secondary-Side Opto-Coupler Driver FEATURES n n n n n n n DESCRIPTION 600mV Reference 1.25% Over Temperature Wide Input Supply Range: 3V to 20V Overshoot Control Function Prevents Output Overshoot on Start-Up and Short-Circuit Recovery High Bandwidth Error Amplifier Permits Simple Loop


    Original     		PDF LT4430 600mV 200kHz LT3804 LTC3900 LTC3901 4430fa mosfet 4430 schematic diagram 72v to 12v converter lt30 transistor flyback converter 12v to 18v linear opto coupler LT4430ES6 LTC3722-2 opto coupler 2kw full bridge converter design 4430 transistor

    Untitled

    Abstract: No abstract text available
    Text: LT4430 Secondary-Side Opto-Coupler Driver Features Description 600mV Reference 1.25% Over Temperature n Wide Input Supply Range: 3V to 20V n Overshoot Control Function Prevents Output Overshoot on Start-Up and Short-Circuit Recovery n High Bandwidth Error Amplifier Permits Simple Loop


    Original     		PDF LT4430 600mV LTC3805/LTC3805-5 70KHz 700kHz) MSOP-10E DFN-10 LT3748 MSOP-16 LT3798

    mosfet 4430

    Abstract: No abstract text available
    Text: LT4430 Secondary-Side Opto-Coupler Driver FEATURES n n n n n n n DESCRIPTION 600mV Reference 1.25% Over Temperature Wide Input Supply Range: 3V to 20V Overshoot Control Function Prevents Output Overshoot on Start-Up and Short-Circuit Recovery High Bandwidth Error Amplifier Permits Simple Loop


    Original     		PDF LT4430 600mV LTC3805/LTC3805-5 70KHz 700kHz) MSOP-10E DFN-10 LT3748 MSOP-16 LT3758 mosfet 4430

    4430 mosfet

    Abstract: mosfet 4430 ANPEC A102 APM4430 4430 8 pin ao 4430
    Text: APM4430 N-Channel Enhancement Mode MOSFET Features • Pin Description 30V/23A , RDS ON =4.5mΩ(typ.) @ VGS=10V RDS(ON)=7mΩ(typ.) @ VGS=5V • Super High Dense Cell Design for Extremely Low RDS(ON) • • 5 4 6 3 7 2 8 1 Reliable and Rugged SO-8 Package


    Original     		PDF APM4430 0V/23A 4430 mosfet mosfet 4430 ANPEC A102 APM4430 4430 8 pin ao 4430

    4435 mosfet

    Abstract: APM2014 4410 mosfet MOSFET 4420 4435* mos 4435 sc MOSFET 4435 9935 mosfet ANPEC APM2310
    Text: www.anpec.com.tw ANPEC MOSFET Product Anpec Always Around Prepared By Tim Shiue TEL : 886-3-564-2000 Ext 250 Date : Aug. 12th, 2005 1 大綱 www.anpec.com.tw • Anpec 技術發展 • Anpec MOSFET • 新產品開發方向 2 Anpec MOSFET技術發展 MOSFET技術發展


    Original     		PDF APM70N03 APM3005/7/9N APM2509/6/4N MO-23/25/26/89, SC-70 0V/20V, 30mohm /55mohm~ APM2300A/2322/2324, APM2310/2320/2306, 4435 mosfet APM2014 4410 mosfet MOSFET 4420 4435* mos 4435 sc MOSFET 4435 9935 mosfet ANPEC APM2310

    Si7625DN

    Abstract: mosfet 4430 si7625 S10-2503
    Text: SPICE Device Model Si7625DN Vishay Siliconix P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF Si7625DN S10-2503-Rev. 01-Nov-10 mosfet 4430 si7625 S10-2503

    GE2761

    Abstract: No abstract text available
    Text: Pb Free Plating Product ISSUED DATE :2005/05/18 REVISED DATE : GE2761 BVDSS RDS ON ID N-CHANNEL ENHANCEMENT MODE POWER MOSFET 600/650V 1.0 10A Description The GE2761 series provide the designer with best combination of fast switching, ruggedized device design, low


    Original     		PDF GE2761 600/650V GE2761 O-220)

    AP2761P-A

    Abstract: No abstract text available
    Text: AP2761P-A Pb Free Plating Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lower On-resistance D ▼ Fast Switching Characteristic ▼ Simple Drive Requirement G ▼ RoHS Compliant BVDSS 650V RDS ON 1Ω ID 10A S Description


    Original     		PDF AP2761P-A O-220 O-220 100us 100ms AP2761P-A

    Untitled

    Abstract: No abstract text available
    Text: AP2761P-A Pb Free Plating Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Lower On-resistance BVDSS D Fast Switching Characteristic Simple Drive Requirement G RoHS Compliant 650V RDS ON 1 ID 10A S Description The TO-220 package is universally preferred for all commercialindustrial applications. The device is suited for DC-DC ,AC-DC


    Original     		PDF AP2761P-A O-220 O-220 100us 100ms

    mosfet 10a 600v

    Abstract: P channel MOSFET 10A 330v ssm2761pa
    Text: SSM2761P-A N-CHANNEL ENHANCEMENT MODE POWER MOSFET PRODUCT SUMMARY D Lower On-resistance Fast Switching Characteristic Simple Drive Requirement RoHS Compliant G BVDSS 650V RDS ON 1Ω ID 10A S DESCRIPTION The TO-220 package is universally preferred for all commercialindustrial applications.


    Original     		PDF SSM2761P-A O-220 O-220 mosfet 10a 600v P channel MOSFET 10A 330v ssm2761pa

    Untitled

    Abstract: No abstract text available
    Text: AP2761R-A Pb Free Plating Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Lower On-resistance BVDSS D Fast Switching Characteristic Simple Drive Requirement G RoHS Compliant 650V RDS ON 1 ID 10A S Description AP2761 series are specially designed as main switching devices for


    Original     		PDF AP2761R-A AP2761 265VAC O-262 100us 100ms

    AP2761R-A

    Abstract: AP2761
    Text: AP2761R-A Pb Free Plating Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lower On-resistance D ▼ Fast Switching Characteristic ▼ Simple Drive Requirement G ▼ RoHS Compliant BVDSS 650V RDS ON 1Ω ID 10A S Description


    Original     		PDF AP2761R-A AP2761 265VAC O-262 100us 100ms AP2761R-A

    Untitled

    Abstract: No abstract text available
    Text: AP2761S-A-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET 100% Avalanche Test BVDSS D Fast Switching Characteristic Simple Drive Requirement G RoHS Compliant & Halogen-Free 650V RDS ON 1 ID 10A S Description


    Original     		PDF AP2761S-A-HF AP2761S 265VAC O-263 100us 100ms

    ap2761

    Abstract: No abstract text available
    Text: AP2761S-A-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Avalanche Test D ▼ Fast Switching Characteristic ▼ Simple Drive Requirement ▼ RoHS Compliant & Halogen-Free G BVDSS 650V RDS ON 1Ω ID


    Original     		PDF AP2761S-A-HF AP2761S 265VAC O-263 100us 100ms ap2761

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SiA483DJ www.vishay.com Vishay Siliconix P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF SiA483DJ 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si7625DN www.vishay.com Vishay Siliconix P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF Si7625DN 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    035H

    Abstract: AN1001 IRFPE30 mosfet 20A 500V
    Text: PD- 94853 IRFP460APbF SMPS MOSFET HEXFET Power MOSFET Applications Switch Mode Power Supply SMPS l Uninterruptable Power Supply l High speed power switching l Lead-Free l Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic


    Original     		PDF IRFP460APbF AN1001) O-247AC IRFPE30 035H AN1001 IRFPE30 mosfet 20A 500V

    mosfet 4430

    Abstract: Diode 400V 20A 035H IRFPE30 igbt 400V 20A irfp460a 4430 mosfet
    Text: IRFP460APbF Static @ TJ = 25°C unless otherwise specified Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage V(BR)DSS IDSS Drain-to-Source Leakage Current


    Original     		PDF IRFP460APbF specifO-247AC IRFPE30 mosfet 4430 Diode 400V 20A 035H IRFPE30 igbt 400V 20A irfp460a 4430 mosfet

    035H

    Abstract: AN1001 IRFPE30 MJ2400 Power MOSFET 50V 20A
    Text: PD- 94853 IRFP460APbF SMPS MOSFET HEXFET Power MOSFET Applications Switch Mode Power Supply SMPS l Uninterruptable Power Supply l High speed power switching l Lead-Free l Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic


    Original     		PDF IRFP460APbF AN1001) O-247AC 035H AN1001 IRFPE30 MJ2400 Power MOSFET 50V 20A

    irfp460a

    Abstract: IRFP460APBF SiHFP460A
    Text: IRFP460A, SiHFP460A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Available Requirement • Improved Gate, Avalanche and Dynamic dV/dt RoHS* COMPLIANT Ruggedness • Fully Characterized Capacitance and Avalanche Voltage


    Original     		PDF IRFP460A, SiHFP460A 2002/95/EC O-247 18-Jul-08 irfp460a IRFP460APBF

    Untitled

    Abstract: No abstract text available
    Text: PD‘91880 International I R Rectifier IRFP460A smpsmosfet HEXFET Power MOSFET Applications • Switch Mode Power Supply SMPS • Uninterruptable Power Supply • High speed power switching V d ss 500V R d s (o n ) m a x 0.27£2 Id 20A Benefits • Low Gate Charge Qg results in Simple


    OCR Scan     		PDF IRFP460A AN1001) Cu310)

    mosfet 4430

    Abstract: FF121R 4431 mosfet
    Text: 23 HARRIS IRFF12 0 /1 2 1/12 2/123 IRFF120R/121 R /122R/123R N-Channel Power MOSFETs Avalanche Energy Rated* A u g u s t 1991 Package Features T O -2 0 5 A F • 5.0A and 6.0A , 8 0 V - 1 0 0V • rDS on = 0.30S1 and 0 .4 0 ii • Single Pulse Avalanche Energy R ated*


    OCR Scan     		PDF IRFF12 IRFF120R/121 /122R/123R IRFF120, IRFF121, IRFF122, IRFF123 IRFF120R, IRFF121R, IRFF122R, mosfet 4430 FF121R 4431 mosfet