Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    4435GJ MOSFET Search Results

    4435GJ MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    4435GJ MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    4435GH

    Abstract: 4435GJ 4435gj MOSFET AP4435GH AP4435GJ 4435*gj 4435g AP4435 marking codes transistors SSs 4435
    Text: AP4435GH/J RoHS-compliant Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D ▼ Lower On-resistance BVDSS -30V RDS ON 20mΩ ID ▼ Fast Switching Characteristic -40A G S Description The TO-252 package is widely preferred for all commercial-industrial


    Original     		PDF AP4435GH/J O-252 AP4435GJ) O-251 O-251 4435GJ 4435GH 4435GJ 4435gj MOSFET AP4435GH AP4435GJ 4435*gj 4435g AP4435 marking codes transistors SSs 4435

    4435GJ

    Abstract: 4435gj MOSFET
    Text: AP4435GH/J RoHS-compliant Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement BVDSS D Lower On-resistance RDS ON Fast Switching Characteristic ID -30V 20m -40A G S Description G The TO-252 package is widely preferred for all commercial-industrial


    Original     		PDF AP4435GH/J O-252 AP4435GJ) O-251 O-251 4435GJ 4435GJ 4435gj MOSFET