4484 8 pin
Abstract: TLE 5025 4484 AEB02862 AEP02857 AES02863 Q67006-A9396 4484 mos vq15 TLE 4484 G
Text: Dual Voltage Regulator with 5 V and 15 V Outputs TLE 4484 Target Data Features • • • • • • • • Dual output: 5 V and 15 V High input voltage range: up to 45 V High output current capability High output voltage accuracy Very low current consumption
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OT-223
Q67006-A9396
P-SOT223-4-2
4484 8 pin
TLE 5025
4484
AEB02862
AEP02857
AES02863
Q67006-A9396
4484 mos
vq15
TLE 4484 G
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max14800
Abstract: MAX14801 MAX14802 medical ultrasonic probe medical ultrasound guide
Text: 19-4484; Rev 1; 9/09 Low-Charge Injection, 16-Channel, High-Voltage Analog Switches The MAX14800–MAX14803 provide high-voltage switching on 16 channels for ultrasonic imaging and printer applications. The devices utilize HVCMOS process technology to provide 16 high-voltage lowcharge-injection SPST switches, controlled by a digital
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Original
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16-Channel,
MAX14800
MAX14803
16-bit
-100V,
00V/0V,
0V/-160V.
MAX14801
MAX14802
medical ultrasonic probe
medical ultrasound guide
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medical ultrasonic probe
Abstract: MAX14803CCM MAX14802 medical ultrasound guide max14800 128 pin ultrasound probe ultrasound piezoelectric design probe transducer
Text: 19-4484; Rev 0; 4/09 Low-Charge Injection, 16-Channel, High-Voltage Analog Switches The MAX14800–MAX14803 provide high-voltage switching on 16 channels for ultrasonic imaging and printer applications. The devices utilize HVCMOS process technology to provide 16 high-voltage lowcharge-injection SPST switches, controlled by a digital
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Original
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16-Channel,
MAX14800
MAX14803
16-bit
-100V,
00V/0V,
0V/-160V.
C48-6
medical ultrasonic probe
MAX14803CCM
MAX14802
medical ultrasound guide
128 pin ultrasound probe
ultrasound piezoelectric design probe transducer
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PDF
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230v 5v level shifter
Abstract: No abstract text available
Text: 19-4484; Rev 2; 11/10 Low-Charge Injection, 16-Channel, High-Voltage Analog Switches The MAX14802/MAX14803/MAX14803A provide highvoltage switching on 16 channels for ultrasonic imaging and printer applications. The devices utilize HVCMOS process technology to provide 16 high-voltage lowcharge-injection SPST switches, controlled by a digital
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Original
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16-Channel,
MAX14802/MAX14803/MAX14803A
16-bit
00V/-100V,
00V/0V,
0V/-160V.
MAX14800/MAX14801
MAX14803A;
230v 5v level shifter
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PDF
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Untitled
Abstract: No abstract text available
Text: 19-4484; Rev 1; 9/09 Low-Charge Injection, 16-Channel, High-Voltage Analog Switches The MAX14800–MAX14803 provide high-voltage switching on 16 channels for ultrasonic imaging and printer applications. The devices utilize HVCMOS process technology to provide 16 high-voltage lowcharge-injection SPST switches, controlled by a digital
|
Original
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16-Channel,
MAX14800
MAX14803
16-bit
-100V,
00V/0V,
0V/-160V.
|
PDF
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PIEZOELECTRIC CABLE medical ultrasound capacitance
Abstract: No abstract text available
Text: 19-4484; Rev 2; 11/10 Low-Charge Injection, 16-Channel, High-Voltage Analog Switches The MAX14802/MAX14803/MAX14803A provide highvoltage switching on 16 channels for ultrasonic imaging and printer applications. The devices utilize HVCMOS process technology to provide 16 high-voltage lowcharge-injection SPST switches, controlled by a digital
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Original
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16-Channel,
MAX14802/MAX14803/MAX14803A
16-bit
00V/-100V,
00V/0V,
0V/-160V.
MAX14800/MAX14801
MAX14803A;
PIEZOELECTRIC CABLE medical ultrasound capacitance
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PDF
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TLE 4484 G
Abstract: AEB02862 AEP02857 AES02863 Q67006-A9396 GSRH 4484 8 pin xs 004 a
Text: Dual Voltage Regulator with 5 V and 15 V Outputs TLE 4484 Features • • • • • • • • Dual output: 5 V and 15 V High input voltage range: up to 45 V High output current capability High output voltage accuracy Very low current consumption Short circuit protected
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Original
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OT-223
Q67006-A9396
P-SOT223-4-2
TLE 4484 G
AEB02862
AEP02857
AES02863
Q67006-A9396
GSRH
4484 8 pin
xs 004 a
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PDF
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MAX14803AEWZ
Abstract: MAX14803 MAX14802
Text: 19-4484; Rev 3; 8/11 Low-Charge Injection, 16-Channel, High-Voltage Analog Switches The MAX14802/MAX14803/MAX14803A provide highvoltage switching on 16 channels for ultrasonic imaging and printer applications. The devices utilize HVCMOS process technology to provide 16 high-voltage lowcharge-injection SPST switches, controlled by a digital
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Original
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16-Channel,
MAX14802/MAX14803/MAX14803A
16-bit
00V/-100V,
00V/0V,
0V/-160V.
MAX14803A;
MAX14802ECM+
MAX14803AEWZ
MAX14803
MAX14802
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PDF
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Untitled
Abstract: No abstract text available
Text: 19-4484; Rev 3; 8/11 Low-Charge Injection, 16-Channel, High-Voltage Analog Switches Features The MAX14802/MAX14803/MAX14803A provide highvoltage switching on 16 channels for ultrasonic imaging and printer applications. The devices utilize HVCMOS process technology to provide 16 high-voltage lowcharge-injection SPST switches, controlled by a digital
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Original
|
16-Channel,
MAX14802/MAX14803/MAX14803A
16-bit
00V/-100V,
00V/0V,
0V/-160V.
MAX14803A;
MAX14802ECM+
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PDF
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AEB02862
Abstract: AEP02857 Q67006-A9396 4484 8 pin
Text: Dual Voltage Regulator with 5 V and 15 V Outputs TLE 4484 Features • • • • • • • • • Dual output: 5 V and 15 V High input voltage range: up to 45 V High output current capability High output voltage accuracy Very low current consumption Short circuit protected
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Original
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P-SOT223-4
AEB02862
AEP02857
Q67006-A9396
4484 8 pin
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PDF
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sharp CCD Image Sensor
Abstract: sharp CCD Camera area CCD sensor 2.2 black V11R
Text: Developed High-Definition 1/1.72 Type 14M CCD CCD Area Image Sensor MN34520PL Overview MN34520PL, which is the most suitable for a high-definition digital still camera and a CCD image sensor with industry-leading 14,750 thousands pixels in the 1/1.72 type, has been developed. Using RGBBayer-array primary color on-chip filters enables excellent color
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MN34520PL
MN34520PL,
720/30P.
MN34520PL
sharp CCD Image Sensor
sharp CCD Camera
area CCD sensor 2.2 black
V11R
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PDF
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4485 40V N-Channel MOS
Abstract: RFG75N05E AN7254 AN7260 AN9321 AN9322
Text: RFG75N05E Data Sheet July 1999 75A, 50V, 0.008 Ohm, N-Channel Power MOSFET Features These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode
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Original
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RFG75N05E
4485 40V N-Channel MOS
RFG75N05E
AN7254
AN7260
AN9321
AN9322
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PDF
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transistor C2001
Abstract: 3DC09 ConCorde MR 200 IC 7476 DONG YUNG 3DC11LP smd transistor 1589 7476 IC data 9806 ARISTON
Text: Worldwide Sales Network Headquarters: Premo Corporation S.L C/Conchita Supervía,13 08028 - Barcelona - Spain P: +34 934 098 980 F: +34 934 906 682 info@grupopremo.com www.grupopremo.com Manufacturing Plants: China PREMO Electronic Wuxi Bldg. No. 26-B Lot 52, Han Jiang Rd
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Original
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20kHz
150kHz)
20kHz-150kHz)
SDTR1503
TR1102CAP
340uH)
SDTR1103
38mH-16
ZAC1203
transistor C2001
3DC09
ConCorde MR 200
IC 7476
DONG YUNG
3DC11LP
smd transistor 1589
7476 IC data
9806
ARISTON
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PDF
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3 phase ac sinewave phase inverter single ic
Abstract: IC 7476 e 938 hall Effect sensor ARISTON transistor C2001 IC 7476 datasheet CH-6300 D89522 DONG YUNG OFF GRID SOLAR INVERTER IC
Text: Worldwide Sales Network Headquarters: Premo Corporation S.L C/Conchita Supervía,13 08028 - Barcelona - Spain P: +34 934 098 980 F: +34 934 906 682 info@grupopremo.com www.grupopremo.com Manufacturing Plants: China PREMO Electronic Wuxi Bldg. No. 26-B Lot 52, Han Jiang Rd
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PDF
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Thomson ceramic capacitor
Abstract: TSFL06 K 3264 CERAMIC LCCC 68 TSFL TSBC LAYER .35 micron gate array TSFL12 TSGC
Text: THOMSON MIL ET SPATIAUX SSE 1> • S02bfl7S DDDÜSÜ7 ^23 ■ THCM T^Hà- ASIC PRODUCTS TMS offers a wide range of ASIC's products : bipolar, MOS, BICMOS, linear, digital, gate arrays, standard cells, full custom. All — — — ASIC's products are available with the following screening levels :
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00D0SQ7
Thomson ceramic capacitor
TSFL06
K 3264
CERAMIC LCCC 68
TSFL
TSBC
LAYER
.35 micron gate array
TSFL12
TSGC
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PDF
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TSGB01
Abstract: TSFL12 TSFL06 Thomson Linear Integrated Circuits TSGB 54080
Text: ASIC PRODUCTS THOMSON MIL ET SPATIAUX TMS offers a wide range of ASIC's products, BIPOLAR, MOS, LINEAR, DIGITAL GATE ARRAYS, STANDARD CELLS, FULL CUSTOM. All ASIC’s products are available with the following screening / quality classes: - Military temperature ra n g e ;
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OCR Scan
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00DDD3B
30x30
TSGB01
TSFL12
TSFL06
Thomson Linear Integrated Circuits
TSGB
54080
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PDF
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Untitled
Abstract: No abstract text available
Text: • 4302571 QDSmiD tSü ■ HAS E5J HARRIS IRFP15 0 /1 5 1 /1 5 2 /1 53 IRFP150R/151 R /152R/153R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Package Features TO-247 TOP VIEW • 3 4 A and 40 A , 6 0 V - 1 0 0V • rD S on = 0 .0 5 5 H an d 0 .0 8 0
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OCR Scan
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IRFP15
IRFP150R/151
/152R/153R
O-247
IRFP150,
IRFP151,
IRFP152,
IRFP153
IRFP150R,
IRFP151R,
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PDF
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RFG75N05E
Abstract: No abstract text available
Text: RFG75N05E Semiconductor April 1999 Data Sheet 75A, 50 V, 0.008 Ohm, N-Channel Power MOSFET File Number 2275.4 Features • 75A, 50V These are N-Channel enhancem ent mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a
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OCR Scan
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RFG75N05E
008i2
23e-12
249e-3
55e-9
1e-30
14e-9)
17e-6)
37e-5)
78e-3
RFG75N05E
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PDF
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diode 4483
Abstract: IRFP150R irfp 350 n 4484 MOSfet
Text: IRFP150/151/152/153 IRFP150R/1 51R /152R/153R 23 HARRIS N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Package Features T O -2 4 7 • 34A and 40A, 60V - 100V TOP VIEW • r0S on = 0.055£1 and 0 .0 8 fl DRAIN (T A B ) • Single Pulse Avalanche Energy Rated*
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OCR Scan
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IRFP150/151/152/153
IRFP150R/1
/152R/153R
IRFP150,
IRFP151,
IRFP152,
IRFP153
IRFP150R,
IRFP151R,
IRFP152R,
diode 4483
IRFP150R
irfp 350 n
4484 MOSfet
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PDF
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Untitled
Abstract: No abstract text available
Text: SSÌ h a r fr is U S E M I C O N D U C T O R 7A, 250V, 0.460 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 7A, 250V, rDS ON = 0.460U The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs
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OCR Scan
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FSS23A4D,
FSS23j\4R
MIL-STD-750,
MIL-S-19500,
100ms;
500ms;
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PDF
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MEM551
Abstract: 3n207 3N208
Text: TYPE 3N207 DUAL P-CHANNEL ENHANCEMENT-TYPE INSULATED GATE FIELD EFFECT TRANSISTOR B U L L E T I N N O . D L - S 7 3 1 1 7 0 8 , A P R I L 1 9 7 2 - R E V I S E D M A R C H 1 9 7 3 TWO E N H A N C E M E N T -T Y P E t MOS SILIC O N TRAN SISTO RS
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OCR Scan
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3N207
MEM551
3N208
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PDF
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Untitled
Abstract: No abstract text available
Text: 610 54F/74F610 • 54F/74F612 • 612 Connection Diagrams -r~ r Memory Mappers With 3-State Outputs and Output Latches Description The 'F610 ana^F§12 memory mappers are designed to expand the address capability o f a Central Processing Unit CPU by eight bits. These
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OCR Scan
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54F/74F610
54F/74F612
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PDF
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74*612
Abstract: memory mapper 612
Text: 610 54F/74F610 • 54F/74F612 • 612 Connection Diagrams - - Memory Mappers W iib3-State Outputs and Output Latches The ’F610 A d K f ir z jn e m o r y mappers are designed to expand the address c a p 4 | U t y ^ a C jp tra l Processing Unit CPU by eight bits. These
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OCR Scan
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54F/74F610
54F/74F612
74*612
memory mapper 612
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PDF
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F610
Abstract: F612 74f610 memory mapper 612 74 610 memory
Text: 610 54F/74F610 • 54F/74F612 612 • Connection Diagrams Memory Mappers With 3-State Outputs and Output Latches Description , The ’FCTO em ory mappers are designed to expand the address r r i p m n Cgptral Processing Unit CPU by eight bits. These devices c o n ta in ^ i^ b e n ^ p a A fe g ^ te r s , each con tain ing tw elve bits, that
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54F/74F610
54F/74F612
F610
F612
74f610
memory mapper 612
74 610 memory
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PDF
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