Etron Technology
Abstract: EM562166BC-55 EM562166BC-70
Text: EtronTech EM562166 128K x 16 Low Power SRAM Rev 1.5 04/2007 48-Ball BGA CSP , Top View Features • Single power supply voltage of 2.7V to 3.6V • Power down features using CE • Low operating current : 30mA(max for 55 ns) • Maximum Standby current : 35µA at 3.6 V
|
Original
|
EM562166
48-Ball
EM562166BC-55
EM562166BC-55G
EM562166TS-55
44pin
EM562166BC-70
Etron Technology
EM562166BC-55
EM562166BC-70
|
PDF
|
GLT44016-35J4
Abstract: GLT44016P-40J4 glt44016
Text: G -LINK GLT44016 256K X 16 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT Sep, 2003 Rev.3.2 Features : Description : ∗ ∗ ∗ ∗ ∗ The GLT44016 is a 262,144 x 16 bit high-performance CMOS dynamic random access memory. The GLT44016 offers Fast Page mode with Extended Data Output, and
|
Original
|
GLT44016
GLT44016
512-cycle
2701Northwestern
GLT44016-35J4
GLT44016P-40J4
|
PDF
|
A416316S-40
Abstract: AT7370
Text: A416316 64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE Document Title 64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE Revision History Rev. No. History Issue Date Remark 0.0 Initial issue March 06, 1998 Preliminary 0.1 Modify 40/44L TSOP type II package outline drawing and
|
Original
|
A416316
40/44L
40/44L
A416316S-40
AT7370
|
PDF
|
Untitled
Abstract: No abstract text available
Text: A416316B Series 64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE Document Title 64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE Revision History History Issue Date Remark 0.0 Initial issue November 15, 2000 Preliminary 1.0 Final version release September 29, 2003
|
Original
|
A416316B
A416316B-L
|
PDF
|
GLT41116-40J4
Abstract: GLT41116-35J4 64K x 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE GLT4 GLT41116 GLT41116-30J4 GLT41116-30TC GLT41116-35TC GLT41116-40TC GLT41116-45J4
Text: G -LINK GLT41116 64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE Feb 2004 Rev 2.1 Features : Description : ∗ ∗ ∗ ∗ ∗ The GLT41116 is a 65,536 x 16 bit highperformance CMOS dynamic random access memory. The GLT41116 offers Fast Page mode ,and has both BYTE WRITE and
|
Original
|
GLT41116
GLT41116
256-cycle
256x16
400mil
GLT41116-40J4
GLT41116-35J4
64K x 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE
GLT4
GLT41116-30J4
GLT41116-30TC
GLT41116-35TC
GLT41116-40TC
GLT41116-45J4
|
PDF
|
GLT41016-30J4
Abstract: GLT41016 GLT41016-30TC GLT41016-35J4 GLT41016-35TC GLT41016-40J4 GLT41016-40TC GLT41016-45J4 GLT41016-45TC
Text: G -LINK GLT41016 64K X 16 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT Feb 2004 Rev 2.2 Features : Description : ∗ ∗ ∗ ∗ ∗ The GLT41016 is a 65,536 x 16 bit highperformance CMOS dynamic random access memory. The GLT41016 offers Fast Page mode with Extended Data Output, and has
|
Original
|
GLT41016
GLT41016
256-cycle
400mil
GLT41016-30J4
GLT41016-30TC
GLT41016-35J4
GLT41016-35TC
GLT41016-40J4
GLT41016-40TC
GLT41016-45J4
GLT41016-45TC
|
PDF
|
GLT44016-35J4
Abstract: GLT44016-40TC GLT44016 GLT44016-50J4
Text: G -LINK GLT44016 256K X 16 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT Aug, 2000 Rev.3.1 Features : Description : ∗ ∗ ∗ ∗ ∗ The GLT44016 is a 262,144 x 16 bit high-performance CMOS dynamic random access memory. The GLT44016 offers Fast Page mode with Extended Data Output, and
|
Original
|
GLT44016
GLT44016
512-cycle
GLT44016-40J4
256Kx16
400mil
2701Northwestern
GLT44016-35J4
GLT44016-40TC
GLT44016-50J4
|
PDF
|
GLT41116-35J4
Abstract: GLT710008
Text: G -LINK GLT41116 64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE May 1998 Rev 2 Features : Description : ∗ ∗ ∗ ∗ ∗ The GLT41116 is a 65,536 x 16 bit highperformance CMOS dynamic random access memory. The GLT41116 offers Fast Page mode ,and has both BYTE WRITE and
|
Original
|
GLT41116
GLT41116
256-cycle
256x16
400mil
2701Northwestern
GLT41116-35J4
GLT710008
|
PDF
|
GLT41316-40J4
Abstract: No abstract text available
Text: G -LINK GLT41316 64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE June 1998 Rev 2 Features : Description : ∗ ∗ ∗ ∗ ∗ The GLT41316 is a 65,536 x 16 bit highperformance CMOS dynamic random access memory. The GLT41316 offers Fast Page mode ,and has both BYTE WRITE and
|
Original
|
GLT41316
GLT41316
256-cycle
256x16
400mil
2701Northwestern
GLT41316-40J4
|
PDF
|
GLT41216-40TC
Abstract: GLT41216-30J4 GLT41216-30TC GLT41216-35J4 GLT41216-35TC GLT41216-40J4 GLT41216-45J4 GLT41216-45TC
Text: G -LINK GLT41216 64K X 16 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT Feb 2004 Rev.2.2 Features : Description : ∗ ∗ ∗ ∗ ∗ The GLT41216 is a 65,536 x 16 bit highperformance CMOS dynamic random access memory. The GLT41216 offers Fast Page mode with Extended Data Output, and has
|
Original
|
GLT41216
GLT41216
256-cycle
48Pin
60Ball
GLT41216-40TC
GLT41216-30J4
GLT41216-30TC
GLT41216-35J4
GLT41216-35TC
GLT41216-40J4
GLT41216-45J4
GLT41216-45TC
|
PDF
|
GLT41016-30J4
Abstract: EDO Corporation 64k dynamic RAM
Text: G -LINK GLT41016 64K X 16 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT Dec 1998 Rev 2.1 Features : Description : ∗ ∗ ∗ ∗ ∗ The GLT41016 is a 65,536 x 16 bit highperformance CMOS dynamic random access memory. The GLT41016 offers Fast Page mode with Extended Data Output, and has
|
Original
|
GLT41016
GLT41016
256-cycle
400mil
2701Northwestern
GLT41016-30J4
EDO Corporation
64k dynamic RAM
|
PDF
|
GLT41016
Abstract: GLT41016-35J4 GLT41016-40J4
Text: G -LINK GLT41016 64K X 16 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT May 1997 Rev 1 Features : Description : The GLT41016 is a 65,536 x 16 bit highperformance CMOS dynamic random access memory. The GLT41016 offers Fast Page mode with Extended Data Output, and has
|
Original
|
GLT41016
GLT41016
256-cycle
400mil
2701Northwestern
GLT41016-35J4
GLT41016-40J4
|
PDF
|
GLT41216-30J4
Abstract: No abstract text available
Text: G -LINK GLT41216 64K X 16 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT Aug 1999 Rev.2.1 Features : Description : ∗ ∗ ∗ ∗ ∗ The GLT41216 is a 65,536 x 16 bit highperformance CMOS dynamic random access memory. The GLT41216 offers Fast Page mode with Extended Data Output, and has
|
Original
|
GLT41216
GLT41216
256-cycle
GLT44016-40J4
256Kx16
400mil
2701Northwestern
GLT41216-30J4
|
PDF
|
GLT440L16P-40TC
Abstract: GLT440L16-40TC GLT440L16P-40J4 GLT440L16 GLT440L16-50J4 GLT440L16-40J4
Text: G -LINK GLT440L16 256K X 16 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT Aug. 2003 Rev.2.3 Features : Description : ∗ ∗ ∗ ∗ ∗ The GLT440L16 is a 262,144 x 16 bit high-performance CMOS dynamic random access memory. The GLT44016 offers Fast Page mode with Extended Data Output, and
|
Original
|
GLT440L16
GLT440L16
GLT44016
512-cycle
F60ns
100ns
GLT440L16P-40TC
GLT440L16-40TC
GLT440L16P-40J4
GLT440L16-50J4
GLT440L16-40J4
|
PDF
|
|
|
IC HS 8108
Abstract: PIC16 example codes TECH C compiler pwm PIC16 example codes TECH C compiler interrupt HS 8108 PIC16 example codes spi slave PCD8572 PIC16 example codes parallel ram eprom PIC16 example c code i2c master PIC16f84 example codes TECH C compiler interrupt powerful listening bug notes
Text: Table of Contents PRODUCT SELECTION GUIDE INTRODUCTION The Embedded Control Solutions Company .3 PIC16/17 8-BIT MICROCONTROLLERS PIC12CXXX Family: 8-Pin Family .10
|
Original
|
PIC16/17
PIC12CXXX
PIC16C5X
PIC16C6XX
PIC14C000
10F-1C
DS00027N-page
IC HS 8108
PIC16 example codes TECH C compiler pwm
PIC16 example codes TECH C compiler interrupt
HS 8108
PIC16 example codes spi slave
PCD8572
PIC16 example codes parallel ram eprom
PIC16 example c code i2c master
PIC16f84 example codes TECH C compiler interrupt
powerful listening bug notes
|
PDF
|
Untitled
Abstract: No abstract text available
Text: A4263161A Series 64K X 16 CMOS DYNAMIC RAM WITH EDO PAGE MODE Preliminary WITH DUAL WE Document Title 64K X 16 CMOS DYNAMIC RAM WITH EDO PAGE MODE WITH DUAL WE Revision History Rev. No. 0.0 PRELIMINARY History Issue Date Remark Initial issue October 26, 1999
|
Original
|
A4263161A
400mil,
40-pin
|
PDF
|
A426316AS-35
Abstract: A426316AS-35L A426316AS-30L
Text: A426316A Series Preliminary 64K X 16 CMOS DYNAMIC RAM WITH EDO PAGE MODE Document Title 64K X 16 CMOS DYNAMIC RAM WITH EDO PAGE MODE Revision History Rev. No. 0.0 PRELIMINARY History Issue Date Remark Initial issue October 26, 1999 Preliminary October, 1999, Version 0.0
|
Original
|
A426316A
400mil,
40-pin
A426316AS-35
A426316AS-35L
A426316AS-30L
|
PDF
|
A426316B
Abstract: A426316BS A426316BV
Text: A426316B Series Preliminary 64K X 16 CMOS DYNAMIC RAM WITH EDO PAGE MODE Document Title 64K X 16 CMOS DYNAMIC RAM WITH EDO PAGE MODE Revision History Rev. No. 0.0 PRELIMINARY History Issue Date Remark Initial issue November 15, 2000 Preliminary November, 2000, Version 0.0
|
Original
|
A426316B
400mil,
40-pin
A426316BS
A426316BV
|
PDF
|
A416316B
Abstract: No abstract text available
Text: A416316B Series Preliminary 64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE Document Title 64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE Revision History Rev. No. 0.0 PRELIMINARY History Issue Date Remark Initial issue November 15, 2000 Preliminary November, 2000, Version 0.0
|
Original
|
A416316B
400mil,
40-pin
|
PDF
|
Untitled
Abstract: No abstract text available
Text: A416316B Series 64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE Document Title 64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE Revision History Rev. No. History Issue Date Remark 0.0 Initial issue November 15, 2000 Preliminary 1.0 Final version release September 29, 2003
|
Original
|
A416316B
400mil,
40-pin
|
PDF
|
Untitled
Abstract: No abstract text available
Text: AT29C1024 Features • • • • • • • • • • • • Fast Read Access Time - 70 ns Five-Volt-Only Reprogramming Sector Program Operation Single Cycle Reprogram Erase and Program 512 Sectors (128 words/sector) Internal Address and Data Latches for 128 W ords
|
OCR Scan
|
AT29C1024
10-Year
|
PDF
|
Untitled
Abstract: No abstract text available
Text: AT29LV1024 Features • • • • • • • • • • • • Single 3.3 V ± 1 0 % Supply Three-Volt-Only Read and Write Operation Software Protected Programming Fast Read Access Time - 250 ns Low Power Dissipation 15 mA Active Current 50 nA CMOS Standby Current
|
OCR Scan
|
AT29LV1024
10-Year
|
PDF
|
AT-29C1024
Abstract: No abstract text available
Text: AT29C1024k / Features • • • • • • • • • • • • Fast Read Access Time - 70 ns Five-Volt-Only Reprogramming Sector Program Operation Single Cycle Reprogram Erase and Program 512 Sectors (128 words/sector) Internal Address and Data Latches for 128 Words
|
OCR Scan
|
AT29C1024k
10-Year
PER29C1024-15TI
AT29C1024-15LM
AT29C1024
AT-29C1024
|
PDF
|
Untitled
Abstract: No abstract text available
Text: AT29LV1024 Features • • • • • • • • • • • • Single 3.3 V ± 10% Supply Three-Volt-Only Read and Write Operation Software Protected Programming Fast Read A cce ss Time - 250 ns Low Power Dissipation 15 mA Active Current 50 jaA CM OS Standby Current
|
OCR Scan
|
AT29LV1024
10-Year
AT29LV1024-20JC
AT29L
1024-20LC
AT29LV1024-20TC
AT29LV1024-20JI
AT29LV1024-20LI
AT29LV1024-20TI
AT29LV1024-25JC
|
PDF
|
