MSM51V16165D
Abstract: MSM51V16165DSL SOJ42-P-400-1
Text: Pr E2G0132-17-61 el im y 1,048,576-Word ¥ 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSM51V16165D/DSL is a 1,048,576-word ¥ 16-bit dynamic RAM fabricated in Oki's silicongate CMOS technology. The MSM51V16165D/DSL achieves high integration, high-speed operation,
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E2G0132-17-61
576-Word
16-Bit
MSM51V16165D/DSL
42-pin
50/44-pin
MSM51V16165D
MSM51V16165DSL
SOJ42-P-400-1
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MSM51V4222C
Abstract: MSM51V8222A MSM54V12222A MSM54V12222A-30-TS-K MSM54V12222A-40-TS-K
Text: MSM54V12222A OKI Semiconductor OKI Semiconductor MSM54V12222A REVISION-1 1997. 9 . 30 262,214 Words ¥ 12 Bits FIELD MEMORY GENERAL DESCRIPTION The OKI MSM54V12222A is a high performance 3M bits, 256K X 12 bits, Field Memory especially designed for high-speed serial access applications such as HDTVs, conventional NTSC TVs, VTRs, digital
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MSM54V12222A
MSM54V12222A
MSM54V12222As
256KX12
MSM51V4222C
MSM51V8222A
MSM54V12222A-30-TS-K
MSM54V12222A-40-TS-K
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MR27V1652D
Abstract: DIP42-P-600-2 MR27V1652DMA MR27V1652DRA
Text: ¡ Semiconductor 1A MR27V1652D 1,048,576-Word x 16-Bit or 2,097,152-Word x 8-Bit 8-Word x 16-Bit or 16-Word x 8-Bit Page Mode One Time PROM DESCRIPTION The MR27V1652D is a 16Mbit electrically Programmable Read-Only Memory with page mode. Its configuration can be electrically switched between 1,048,576 word x 16bit and 2,097,152 word x 8
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MR27V1652D
576-Word
16-Bit
152-Word
16-Word
MR27V1652D
16Mbit
16bit
DIP42-P-600-2
MR27V1652DMA
MR27V1652DRA
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MSM27C402CZ
Abstract: No abstract text available
Text: ¡ Semiconductor 1A MSM27C402CZ 262,144-Word x 16-Bit or 524,288-Word x 8-Bit One Time PROM DESCRIPTION The MSM27C402CZ is a 4Mbit electrically Programmable Read-Only Memory whose configuration can be electrically switched between 262,144 word x 16bit and 524,288 word x 8bit. The MSM27C40
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MSM27C402CZ
144-Word
16-Bit
288-Word
MSM27C402CZ
16bit
MSM27C40
MSM27C402
40-pin
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MR27V402D
Abstract: MR27V402DMP MR27V402DRP MR27V402DTP
Text: ¡ Semiconductor 1A MR27V402D 262,144-Word x 16-Bit or 524,288-Word x 8-Bit One Time PROM DESCRIPTION The MR27V402D is a 4Mbit electrically Programmable Read-Only Memory whose configuration can be electrically switched between 262,144 word x 16bit and 524,288 word x 8bit. The MR27V402D
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MR27V402D
144-Word
16-Bit
288-Word
MR27V402D
16bit
40-pin
MR27V402DMP
MR27V402DRP
MR27V402DTP
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MR27V1602D
Abstract: DIP42-P-600-2 MR27V1602DMA MR27V1602DRA
Text: ¡ Semiconductor 1A MR27V1602D 1,048,576-Word x 16-Bit or 2,097,152-Word x 8-Bit One Time PROM DESCRIPTION The MR27V1602D is a 16Mbit electrically Programmable Read-Only Memory whose configuration can be electrically switched between 1,048,576 word x 16bit and 2,097,152 word x 8bit. The MR27
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MR27V1602D
576-Word
16-Bit
152-Word
MR27V1602D
16Mbit
16bit
V1602D
MR27V1602
DIP42-P-600-2
MR27V1602DMA
MR27V1602DRA
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SOJ42-P-400-1
Abstract: MSM51V18165DSL
Text: Pr E2G0133-17-61 im el y 1,048,576-Word ¥ 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSM51V18165D/DSL is a 1,048,576-word ¥ 16-bit dynamic RAM fabricated in Oki's silicongate CMOS technology. The MSM51V18165D/DSL achieves high integration, high-speed operation,
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E2G0133-17-61
576-Word
16-Bit
MSM51V18165D/DSL
42-pin
50/44-pin
SOJ42-P-400-1
MSM51V18165DSL
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MR27V1602E
Abstract: MR27V1602EMA MR27V1602ETN MR27V1602ETP
Text: PEDR27V1602E-01-01 1Semiconductor MR27V1602E This version : Dec. 1999 Previous version: - Preliminary 1,048,576–Word x 16–Bit or 2,097,152–Word × 8–Bit One Time PROM GENERAL DESCRIPTION The MR27V1602E is a 16 Mbit electrically Programmable Read-Only Memory that can be electrically switched
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PEDR27V1602E-01-01
MR27V1602E
MR27V1602E
576-word
16-bit
152-word
MR27V1602EMA
MR27V1602ETN
MR27V1602ETP
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MR27V802D
Abstract: D1325 d1428
Text: お客様各位 資料中の「沖電気」「ＯＫＩ」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株
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MR27V802D
576-Word
288-Word
16-Bit
MR27V802D8M
MR27V802DCMOS42
DIP44SOP44TSOP
100ns
42DIP
DIP42-P-600-2
MR27V802D
D1325
d1428
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DIP40
Abstract: MSM27C402CZ
Text: お客様各位 資料中の「沖電気」「ＯＫＩ」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株
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MSM27C402CZ
144-Word
16-Bit
288-Word
MSM27C402CZ4MPROM
MSM27C402CZCMOS
40DIP40SOP44TSOP
40DIP
DIP40-P-600-2
40SOP
DIP40
MSM27C402CZ
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MR27V802F
Abstract: MR27V802FMA MR27V802FTN MR27V802FTP
Text: Dear customers, About the change in the name such as "Oki Electric Industry Co. Ltd." and "OKI" in documents to OKI Semiconductor Co., Ltd. The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI Semiconductor Co., Ltd. on October 1, 2008.
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MSM27C402CZ
Abstract: No abstract text available
Text: Dear customers, About the change in the name such as "Oki Electric Industry Co. Ltd." and "OKI" in documents to OKI Semiconductor Co., Ltd. The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI Semiconductor Co., Ltd. on October 1, 2008.
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D-41460
MSM27C402CZ
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MR27V3202F
Abstract: MR27V3202FMA MR27V3202FTN MR27V3202FTP
Text: お客様各位 資料中の「沖電気」「ＯＫＩ」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株
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MR27V3202F
FEDR27V3202F-01-04
MR27V3202F
152-word
16-bit
304-word
16-bit/4
MR27V3202FMA
MR27V3202FTN
MR27V3202FTP
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TSOP 173 g
Abstract: MR27V1602E
Text: お客様各位 資料中の「沖電気」「ＯＫＩ」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株
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MR27V1602E
FEDR27V1602E-02-03
MR27V1602E
576-word
16-bit
152-word
16-bit/2
TSOP 173 g
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MSM27C452CZ
Abstract: DIP40
Text: お客様各位 資料中の「沖電気」「ＯＫＩ」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株
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MSM27C452CZ
144-Word
16-Bit
288-Word
16Word
MSM27C452CZ4MPROM
MSM27C452CZCMOS
40DIP40SOP44TSOP
40DIP
MSM27C452CZ
DIP40
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MR27T3202F
Abstract: No abstract text available
Text: お客様各位 資料中の「沖電気」「ＯＫＩ」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株
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FEDR27T3202F-02-04
MR27T3202F
152-word
16-bit
304-word
MR27T3202F-xxxMA
44-pin
OP44-P-600-1
MR27T3202F-xxxTP
MR27T3202F
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MSM51V18160F
Abstract: SOJ42-P-400-1
Text: Dear customers, About the change in the name such as "Oki Electric Industry Co. Ltd." and "OKI" in documents to OKI Semiconductor Co., Ltd. The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI Semiconductor Co., Ltd. on October 1, 2008.
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MR27V802D
Abstract: DIP42-P-600-2 MR27V802DMA MR27V802DRA MR27V802DTP
Text: Dear customers, About the change in the name such as "Oki Electric Industry Co. Ltd." and "OKI" in documents to OKI Semiconductor Co., Ltd. The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI Semiconductor Co., Ltd. on October 1, 2008.
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com/en/12)
MR27V802D
MR27V802D
DIP42-P-600-2
MR27V802DMA
MR27V802DRA
MR27V802DTP
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mr27v452
Abstract: MR27V452D MR27V452DMP MR27V452DRP MR27V452DTP
Text: Dear customers, About the change in the name such as "Oki Electric Industry Co. Ltd." and "OKI" in documents to OKI Semiconductor Co., Ltd. The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI Semiconductor Co., Ltd. on October 1, 2008.
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MR27V452D
mr27v452
MR27V452D
MR27V452DMP
MR27V452DRP
MR27V452DTP
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TC5118160CJ
Abstract: tc5118160 TC5118160c
Text: TOSHIBA TC5118160CJ/CFT-50,-60 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 1,048,576-WORD x 16-BIT FAST PAGE DYNAMIC RAM DESCRIPTION The TC5118160CJ/CFT is a fast page dynamic RAM organized as 1,048,576 words by 16 bits. The TC5118160CJ/CFT utilizes TOSHIBA’SCMOS silicon gate process technology as well as advanced
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TC5118160CJ/CFT-50
576-WORD
16-BIT
TC5118160CJ/CFT
42-pin
50-pin
TC5118160CJ
tc5118160
TC5118160c
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MSM5118165B
Abstract: TSOP 86 Package
Text: O K I Semiconductor MSM5118165B_ E2G 0055-17-41 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION TheMSM5118165B is a 1,048,576-word x 16-bit dynamic RAM fabricated inOki's silicon-gate CMOS technology. The MSM5118165B achieves high integration, high-speed operation, and low-power
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E2G0055-17-41
MSM5118165B_
576-Word
16-Bit
TheMSM5118165B
MSM5118165B
42-pin
TSOP 86 Package
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bft10
Abstract: No abstract text available
Text: TO SHIBA TENTATIVE TC55V1664BJ/BFT-10,-12,-15 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 65,536-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The TC55V1664BJ/BFT is a 1,048,576 bits high speed static random access memory organized as 65,536 words by 16 bits using CMOS technology, and operated from a single 3.3V supply. Toshiba’s
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TC55V1664BJ/BFT-10
536-WORD
16-BIT
TC55V1664BJ/BFT
SOJ44-P-400-1
44-P-400-0
bft10
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Untitled
Abstract: No abstract text available
Text: TO SHIBA T C 5 5 V 2 161 FT-85f-10,-85L,-10L TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TENTATIVE SILICON GATE CMOS 131,072-WORD BY 16-BIT STATIC RAM DESCRIPTION The TC55V2161FT is a 2,097,152-bit static random access memory SRAM organized as 131,072 words by 16
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FT-85f-10
072-WORD
16-BIT
TC55V2161FT
152-bit
44-P-400-0
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TENTATIVE TC55V8512J/FT-12,-15.-20 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 524,288-W O R D BY 8-BIT CMOS STATIC RAM DESCRIPTION The TC55V8512J/FT is a 4,194,304-bit high-speed static random access memory SRAM organized as 524,288
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TC55V8512J/FT-12
TC55V8512J/FT
304-bit
SOJ36-P-400-1
44-P-400-0
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