Untitled
Abstract: No abstract text available
Text: HITACH I/ LOGIC/ARRAYS/MEfl ì n j 44Tb2D3 00104L.7 5 J~~ -> HD74HC253 92D 10467 D # Dual 4-to-l-line Data Selectors/Multiplexers with 3-state outputs r * b * 7 " X l - 5 1 T he large ou tp u t drive a n d 3-state features o f this device P IN A R R A N G E M E N T
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44Tb2D3
00104L
HD74HC253
0D1D315
T-90-20
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Untitled
Abstract: No abstract text available
Text: H I T A C H I ^ L O G I C / A R R A Y S / M E M TS D E j 44Tb2D3 DDlGblO 92D HD74HC4040 # 10610 T - H 5 ~ 3 3 - n 12-stage Binary Counter The HD74HC4040 is a 12 stage counter. This device is incre- | D PIN ARRANGEMENT merited on the falling edge negative transition} of the input
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44Tb2D3
HD74HC4040
12-stage
HD74HC4040
0D1D315
T-90-20
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Untitled
Abstract: No abstract text available
Text: HN62454 Series 524288-word X 8-bit/ 262144-word x 16-bit CMOS Mask Programmable ROM HITACHI ADE-203-402A Z Rev. 1.0 May. 9,1996 Description T he H N 62454 is a 4-M bit CM O S m ask-P rogram m able R O M o rganized eith er as 262144 w ords by 16 bits or 524288 w ords by 8 bits. R ealizing low p o w er consum ption, this m em ory is allow ed for battery operation.
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HN62454
524288-word
262144-word
16-bit
ADE-203-402A
HN62454P-8
HN62454P-85
HN62454FA-8
HN62454FA-85
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Untitled
Abstract: No abstract text available
Text: H M 5 1 4 1 O O C /C L S e r i e s Preliminary 4,194,304-word x 1-bit Dynamic Random Access Memory HITACHI T he H ita c h i H M 514100C is a CM OS dynam ic R A M o rg a n iz e d 4 ,1 9 4 ,3 0 4 w o rds x 1 b its . HM 514100C has realized higher density, higher
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304-word
514100C
300-m
20-pin
44TbEG3
HM514100C/CL
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Untitled
Abstract: No abstract text available
Text: blE D • MM^baG3 G0E32fi0 1T4 ■ H I T 2 H M 5 1 4 1 9 0 , H M 5 1 4 1 9 0 L S e r i e s -262,144-word x 18-bit Dynamic Random Access Memory HITACHI/ LOGIC/ARRAYS/ NEM The Hitachi HM 514190 are CM OS dynamic RAM organized as 262,144-w ord x 18-bit. HM 514190
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G0E32fi0
144-word
18-bit
144-w
18-bit.
400-mil
40-pin
475-mil
400mil
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Untitled
Abstract: No abstract text available
Text: HM51441OB/BL Series 1,048,576-word x 4-bit Dynamic RAM The Hitachi H M 51441 OB/BL is a CMOS dynamic R A M o rg a n iz e d 1,0 4 8 ,5 7 6 -w o rd x 4 -b it. H M 5 1441 OB/BL h as re a liz e d h ig h e r d en sity , h ig h e r p e rfo rm a n c e and v a rio u s fu n c tio n s by
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HM51441OB/BL
576-word
20pin
20-pin
HM514410BS/BLS-7
HM51441OBS/BLS-8
300-mil
20-pin
CP-20D)
HM514410BHM514410B/BL
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Untitled
Abstract: No abstract text available
Text: 5QE D 44^503 G01341Q 5 HITACHI/ L0GIC/ARRAYS/MÉÎ1 0 H IT A C H I S e p t e m b e r , 1985 CMOS GATE ARRAYS i HD61 SERIES DESIGNER'S MANUAL AND PRODUCT SPECIFICATION HITACHI/ LOGIC/ARR'A YS/MEM SQE D • 4 4TLS03 0G13411 4 T -42-11-09 CMOS GATE ARRAYS HD61 SERIES
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G01341Q
4TLS03
0G13411
HD14070B
1407IB
HD14556B
HD14558B
HD14560B
HD14562B
HD14072B
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Untitled
Abstract: No abstract text available
Text: HB56H232 Series 2,097,152-word x 32-bit High Density Dynamic RAM Module HITACHI Description The HB56H232 is a 2M x 32 dynamic RAM module, mounted 4 pieces of 16-Mbit DRAM HM5118165AJ sealed in SOJ package. The HB56H232 offers Extended Data Out (EDO) Page Mode as a high speed access time.
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HB56H232
152-word
32-bit
16-Mbit
HM5118165AJ)
72-pin
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Untitled
Abstract: No abstract text available
Text: H M 6 2 W 8 5 1 1 H S e r ie s 524288-word x 8-bit High Speed CMOS Static RAM HITACHI ADE-203-750 Z Preliminary Rev. 0.0 F eb.27,1997 Description The HM62W8511H is an asynchronous high-speed static RAM organized as 512-kword x 8-bit. It achieves high-speed access time (10/12/15 ns) through 0.35 p.m CMOS process and high-speed circuit designing
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524288-word
ADE-203-750
HM62W8511H
512-kword
400-mil
36-pin
ns/12
ns/15
GD34GÃ
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Untitled
Abstract: No abstract text available
Text: Preliminary HN624316 Series 16M 1M x 16-bit and (2M x 8-bit) Mask ROM • DESCRIPTION T he H ita c h i H N 6 2 4 3 1 6 is a 1 6 -M e g a b it C M O S M a sk Program mable Read Only M em ory organized as 1,048,576 x 16-bit and 2,097,152 x 8-bit. The high density and high speed provide enough capacity and
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HN624316
16-bit)
16-bit
32-bit
42-pin
44-lead
48-lead
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A03404
Abstract: No abstract text available
Text: HM67S18258 Series 262,144-words x 18-bits Synchronous Fast Static RAM HITACHI ADE-203-661A Z Product Preview Rev. 1 Feb. 21 ,1997 Features • 3.3V ± 5% Operation • LVCMOS Compatible Input and Output • Synchronous Operation • Internal self-timed Late Write
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HM67S18258
144-words
18-bits
ADE-203-661A
M67S18258BP-7
BP-119)
67S18256BP
A03404
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Untitled
Abstract: No abstract text available
Text: HB56T433D Series 4,194,304-word x 32-bit High Density Dynamic RAM Module HITACHI ADE-203Rev. 0.0 Dec. 1, 1995 Description The HB56T433D is a 4 M x 32 dynamic RAM Small Outline DIMM S.O.DIMM , mounted 8 pieces of 16 Mbit DRAM (HM 5117400BTS/BLTS) sealed in TSOP package. An outline of the HB56T433D is 72-pin
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HB56T433D
304-word
32-bit
ADE-203Rev.
5117400BTS/BLTS)
72-pin
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Untitled
Abstract: No abstract text available
Text: HM67S36130 Series 131,072-words x 36-bits Synchronous Fast Static RAM HITACHI ADE-203-659A Z Product Preview Rev. 1 Feb. 21,1997 Features • 3.3V ± 5% Operation • LVCMOS Compatible Input and Output • Synchronous Operation • Internal self-timed Late Write
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HM67S36130
072-words
36-bits
ADE-203-659A
HM67S36130BP-7
BP-119)
GG344f
HM67S36130ng
D34511
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HM514170CLJ8
Abstract: HM514170CLJ-8 HM514170CJ7
Text: HM514170C Series HM51S4170C Series 262,144-word x 16-bit Dynamic Random Access Memory HITACHI Rev. 1.0 Jul. 21, 1995 Description The Hitachi HM 51 S 4170C are CMOS dynamic RAM organized as 262,144-word x 16-bit. HM51(S)4170C have realized higher density, higher performance and various functions by employing 0.8 p.m CMOS process
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HM514170C
HM51S4170C
144-word
16-bit
4170C
16-bit.
4170C
HM514170CLJ8
HM514170CLJ-8
HM514170CJ7
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Untitled
Abstract: No abstract text available
Text: HN29WT800/HN29WB800 Series 1048576-word x 8-bit / 524288-word x 16-bit CMOS Flash Memory HITACHI ADE-203-537 Z Preliminary - Rev. 0.0 J u n .14,1996 Description The Hitachi HN29WT800 Series, HN29WB800 Series are 1-Mword x 8-bit/512-kword x 16-bit CMOS Flash Memory with DINOR (Divided bitlineNOR) type memory cells, thatrealize programming and erase
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HN29WT800/HN29WB800
1048576-word
524288-word
16-bit
ADE-203-537
HN29WT800
HN29WB800
8-bit/512-kword
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Untitled
Abstract: No abstract text available
Text: HM5118160BI Series 1048576-word x 16-bit Dynamic Random Access Memory HITACHI ADE-203-580A Z Rev. 1.0 May. 20, 1996 Description T he H itachi H M 5118160B I is a C M O S dynam ic R A M organized as 1,048,576-w ord x 16-bit. It em ploys the m ost advanced C M O S technology fo r high perform ance and low pow er. T he H M 5118160B I offers
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HM5118160BI
1048576-word
16-bit
ADE-203-580A
5118160B
576-w
16-bit.
ns/70
ns/80
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Untitled
Abstract: No abstract text available
Text: HM51W17800 Series 2,097,152-word x 8-bit Dynamic RAM HITACHI ADE-203-664C Z Rev. 3.0 Feb. 24,1997 Description The Hitachi HM51W17800 is a CMOS dynamic RAM organized 2,097,152-word x 8-bit. It employs the most advanced CMOS technology for high performance and low power. The HM51W17800 offers Fast
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HM51W17800
152-word
ADE-203-664C
28-pin
ns/60
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Untitled
Abstract: No abstract text available
Text: HM514405C Series Preliminary 1,048,576-word x 4-bit Dynamic Random Access Memory HITACHI The H itachi H M 514405C is a CMOS dynam ic RA M o rg a n iz e d 1 ,0 4 8 ,5 7 6 w ords x 4 b its. HM514405C has realized higher density, higher performance and various functions by employing
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HM514405C
576-word
514405C
HM514405C
300-mil
26-pin
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Untitled
Abstract: No abstract text available
Text: HB56H164EJ Serie 1,048,576-word x 64-bit High Density Dynamic RAM Modul HITACHI ADE-203-697A Z Rev. 1.0 Dec. 27, 1996 Description The HB56H164EJ belongs to 8 Byte DIMM (Dual In-line Memory Module) family, and has been developed as an optimized main memory solution for 4 and 8 Byte processor applications. The
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HB56H164EJ
576-word
64-bit
ADE-203-697A
16-Mbit
HM5118165)
16-bit
74ABT16244)
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00534
Abstract: GD234
Text: b lE H M D 5 1 1 6 4 1 0 • S MMTbPOB e r ie s 0023404 BBT H IT A C H I/ ■ H I T S l o g i c /A R R A Y S / M E M 4,194,304-word x 4-bit Dynamic Random Access Memory T he H M 5116410 is a CM OS d y n am ic RAM organized 4,194.304 words x 4 bits. It employs the
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304-word
ref441bS03
GG23t2b
L06IC/ARRAYS/HEM
HM5116410
HM5116410Series
L06IC/ARRAYS/HEf!
00534
GD234
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Untitled
Abstract: No abstract text available
Text: HM5216808C Series HM5216408C Series 1,048,576-word x 8-bit x 2-bank Synchronous Dynamic RAM SSTL-3 2,097,152-word x 4-bit x 2-bank Synchronous Dynamic RAM (SSTL-3) HITACHI ADE-203-617 (Z) Preliminary Rev. 0.0 Jul. 10, 1996 Description A ll inputs and outputs are referred to the rising edge of the clock input. The HM5216808C Series,
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HM5216808C
HM5216408C
576-word
152-word
ADE-203-617
Hz/100
Hz/83
7777K\
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Untitled
Abstract: No abstract text available
Text: H B 5 6 U W 1 6 7 3 E - 6 A /7 A 16777216-word x 72-bit High Density Dynamic RAM Module HITACHI ADE-203-575A Z Rev. 1.0 Dec. 24, 1996 Description The HB56UW1673E belongs to the 8-byte DIMM (Dual In-line Memory Module) family, and has been developed as an optimized main memory solution for 4- and 8-byte processor applications. The
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16777216-word
72-bit
ADE-203-575A
HB56UW1673E
18pieces
64-Mbit
HM5165405ATT)
16-bit
74LVT16244)
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Untitled
Abstract: No abstract text available
Text: HM514405C Series Preliminary 1,048,576-word x 4-bit Dynamic Random Access Memory HITACHI The Hitachi HM 514405C is a CMOS dynamic RAM o rganized 1,048,576 w ords x 4 bits. HM514405C has realized higher density, higher performance and various functions by employing
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HM514405C
576-word
514405C
HM514405C
300-mil
26-pin
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Untitled
Abstract: No abstract text available
Text: HB56A272E-5/6/7 2,097,152-wordx72-bit High Density Dynamic RAM Module HITACHI A D E -2 0 3 -7 4 3 A Z R ev. 1.0 F e b .2 0 ,1 9 9 7 Description The HB56A272E belongs to 8 Byte DIMM (Dual In-line Memory Module) family, and has been developed as an optimized main memory solution for 4 and 8 Byte processor applications. The HB56A272E is a 2M
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HB56A272E-5/6/7
152-wordx72-bit
HB56A272E
16-Mbit
HM5117800)
16-bit
74ABT16244)
168-pin
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