VTB22FWC
Abstract: VTB23FWD CA95037 VTB23FWC
Text: DC/DC SWITCHING POWER SUPPLY DC INPUT 12,24,48, 110 DUAL OUTPUT 45WATTS VTB-WCx/VTB-WD SERIES General Description Features 1. 2. 3. Dimension: 96W x 160L × 33H Variety of Models Chassis mount type Compact and High Efficiency DC INPUT: 12V Input Characteristics
|
Original
|
PDF
|
45WATTS
VTB21FWC
VTB22FWC
VTB23FWC
VTB24FWC
V-16V
VTB23FWD
CA95037
|
VTB01C24
Abstract: VTB01C48B
Text: DC/DC SWITCHING POWER SUPPLY DC INPUT 12,24,48, 110 MULTIPLE OUTPUT 45WATTS VTB-00Cx/VTB-00D SERIES General Description Features Dimension: 96W x 160L × 33H 1. 2. 3. Variety of Models Chassis mount type Compact and High Efficiency DC INPUT: 12V Input Characteristics
|
Original
|
PDF
|
45WATTS
VTB-00Cx/VTB-00D
VTB01C12
VTB01C12B
VTB03C12
VTB04C12
V-16V
VTB01C24
VTB01C24B
VTB03C24
VTB01C24
VTB01C48B
|
luxtron 800
Abstract: fr108 FT10301N0050J FT10800N0050J02 FT10515N0050J DK004 LT11020T0050J FT103 ft10515n0050j01 resistor catalog
Text: AMERICAN TECHNICAL CERAMICS HIGH POWER RESISTIVE PRODUCTS AT C H I G H P O W E R R E S I S T I V E P R O D U C T S Table of Contents ATC: Company
|
Original
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: polyfet rf devices L88026 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base
|
Original
|
PDF
|
L88026
|
IRL19
Abstract: No abstract text available
Text: T1L2003028-SP 30 W, 28V, 500 MHz—2 GHz, PowerbandTM LDMOS RF Power Transistor Introduction The T1L2003028-SP is a POWERBANDTM discrete LDMOS, enhancement mode RF Power transistor designed to operate from 500MHz to 2GHz in wide-band circuits. The device has an
|
Original
|
PDF
|
T1L2003028-SP
500MHz
30watts
45Watts
500MHz-2GHz
IRL19
|
Untitled
Abstract: No abstract text available
Text: EEMB BATTERY 45W Solar module No.ESP045 THE CUSTOM DESIGN: The left picture shows the format of this solar module. It could be changed according to the need of customer or designer. All the figures and parameters rely on the actual need of user. SPECIFICATIONS*
|
Original
|
PDF
|
ESP045
45Watts
36pcs
800mm
541mm
Insulation100M
|
Untitled
Abstract: No abstract text available
Text: High Power Resistive Products Resistors and Terminations: Engineering Guidelines DESIGN, MEASUREMENT AND PERFORMANCE As the wireless revolution extends component requirements upward in frequency, higher in operating power, and smaller in size, performance demands on resistive devices grow ever
|
Original
|
PDF
|
MTT-33,
|
LX803
Abstract: No abstract text available
Text: polyfet rf devices LX803 General Description Silicon VDMOS and LDMOS transistors designed specifically SILICON GATE ENHANCEMENT MODE for broadband RF applications. RF POWER LDMOS TRANSISTOR Suitable for Military Radios, Cellular and Paging Amplifier Base 45 Watts Single Ended
|
Original
|
PDF
|
LX803
LX803
|
fr108
Abstract: Ever Ohms chip resistor
Text: AT C H I G H P O W E R R E S I S T I V E P R O D U C T S ATC Resistors and Terminations: Engineering Guidelines Design, Measurement and Performance Structures, Implementations, and Configurations . . . . . . . . . . . . . . . . . . . . .36 Specs and Specmanship . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .37
|
Original
|
PDF
|
84-WA/HT-110.
MTT-33,
fr108
Ever Ohms chip resistor
|
FT10515N0050J
Abstract: luxtron 800 FA10975N01DBFBK high power dummy load 50 ohm 200w FT10870N0050J03 1945 LT CT12010T0050J CT11020T0050J RO4350 30mil FT109
Text: AMERICAN TECHNICAL CERAMICS HIGH POWER RESISTIVE PRODUCTS AT C H I G H P O W E R R E S I S T I V E P R O D U C T S Table of Contents ATC: Company
|
Original
|
PDF
|
|
1800 ldmos
Abstract: T1L2003028-SP 28V LT 862 ADE CDM 03 T1L2003028-SP 013964 3442-16 TRANSISTOR table
Text: TriQuint It TM POWER BAND SEMICONDUCTOR T 1L2003028-S P 30 W, 28V, 500 M H z -2 G Hz, P o w e r b a n d L D M O S RF P o w e r T r a n s is t o r In tr o d u c tio n Table 1. T h e rm a l C h a ra c te ris tic s Parameter The T1L2003028-SP is a POWERBAND™ discrete
|
OCR Scan
|
PDF
|
T1L2003028-SP
T1L2003028-SP
500MHz
30watts
45Watts
500MHz-2000MHz
VDo-28V
1800 ldmos
T1L2003028-SP 28V
LT 862
ADE CDM 03
013964
3442-16
TRANSISTOR table
|
Untitled
Abstract: No abstract text available
Text: TriQuint PüwERBAND SEMICONDUCTOR TM T 1L2003028-S P 30 W, 28V, 500 M H z -2 G Hz, P o w e r b a n d L D M O S RF P o w e r T r a n s is t o r Introduction T a ble 1. T h e rm a l C h a ra c te ris tic s Parameter The T1L2003028-SP is a POWERBAND™ discrete
|
OCR Scan
|
PDF
|
1L2003028-S
T1L2003028-SP
500MHz
30watts
45Watts
|