7C168A
Abstract: CY7C168A CY7C169A 7C168 CY7C168A-25LMB
Text: CYPRESS SEM ICOND UC TO R MhE D ^ B 250^2 GODbSlM 5 O C V P ,7 ^ CY7C168A CY7C169A <VH 'V? -O 2> CYPRESS SEMICONDUCTOR Features Automatic pow er-dow n when dese lected 7C168A CMOS for optimum speed/power High speed — U a = 15 n s — tACE = 10ns(7C169A)
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CY7C168A
CY7C169A
7C168A)
7C169A)
7C168)
2001Velectrostatic
CY7C168A
CY7C169A
CY7CI68Ahas
CY7C169A-45FMB
7C168A
7C168
CY7C168A-25LMB
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Untitled
Abstract: No abstract text available
Text: Features 32K x 8 Power-Switched and Reprogrammable PROM • Capable of withstanding > 4001V static discharge • CMOS for optimum speed/power • Windowed for reprogrammability • High speed — 25 ns commercial — 35 ns (military) • Low power — 275 mW (commercial)
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300-mil
CY7C271A
CY7C271A
768-word
7C271A
S50Tbb2
GG1530Q
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PDF
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Untitled
Abstract: No abstract text available
Text: CY7C148 CY7C149 CYPRESS SEMICONDUCTOR 1024x4 Static RAM Functional Description • Automatic power-down when d ese lected 7C148 TheC Y 7C 148 a n d CY 7C149 arehigh-perform ance C M O S static R A M s organized as 1024 by 4 bits. Easy m em ory expansion
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CY7C148
CY7C149
1024x4
7C148)
7C149
7C148
25-ns
tACSlI14'
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PDF
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Untitled
Abstract: No abstract text available
Text: CY7C191 CY7C192 " ^ cÌ press SEMICONDUCTOR Features • Automatic power-down when deselected • Transparent write 7C191 • CMOS for optimum speed/power • High speed — ‘ a a = 2 5 ns • Low active power — 880 raW • Low standby power 65,536 x 4 Static R/W RAM
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CY7C191
CY7C192
7C191)
7C192
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PDF
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33AO
Abstract: No abstract text available
Text: ss CY7C170A B>'ss c y p r e s s SEMICONDUCTOR — 4096 x 4 Static RAV RAM Features Functional Description • CMOS for optimum speed/power The CY7C170A is a high-performance CMOS static RAM organized as 4096 words by 4 bits. Easy memory expansion is provided by an active LOW chip select
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CY7C170A
CY7C170A
chi170A
20KMB
CY7C170A--
CY7C170A-25VC
25DMB
CY7C170A-25KMB
33AO
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PDF
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7c169A
Abstract: No abstract text available
Text: CY7C168A CY7C169A CYPRESS SEMICONDUCTOR Features • Automatic power—down when dese lected 7C168A • CMOS for optimum speed/power • Highspeed — tAA = 15 ns — tACE = l« n s (7C169A) • Low active power — 385 mW • Low standby power (7C168)
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CY7C168A
CY7C169A
7C168A)
7C169A)
7C168)
7C168
7c169A
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PDF
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Untitled
Abstract: No abstract text available
Text: CY7C148 CY7C149 CYPRESS SEMICONDUCTOR Functional Description Automatic power-down when dese lected 7CI48 CMOS for optimum speed/power 25-ns access time Low active power — 440 mW (commercial) — 605 mW (military) Low standby power (7C148) — 82.5 mW (25-ns version)
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CY7C148
CY7C149
7CI48)
25-ns
7C148)
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PDF
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Untitled
Abstract: No abstract text available
Text: CY7C168A CY7C169A CYPRESS SEMICONDUCTOR Features • Automatic power—down when dese lected 7C168A • CMOS for optimum speed/power • H ighspeed — 1 \ \ = 15 ns — t A C E = 10ns(7C 169A ) • Low active power — 385 mW • Low standby power (7C168)
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CY7C168A
CY7C169A
7C168A)
7C168)
7C168
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PDF
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Untitled
Abstract: No abstract text available
Text: CY7C164A CY7C166A CYPRESS SEMICONDUCTOR Features 16,384 x 4 Static R/W RAM through I/O3 is written into the memory location specified on the address pins Ao The CY7C164A and CY7C166A are high- through A 13). performance CMOS static RAMs orga nized as 16,384 by 4 bits. Easy memory ex Reading the device is accomplished by tak
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CY7C164A
CY7C166A
CY7C164A
CY7C166A
7C166A)
CY7C164Aâ
35LMB
CY7C166Aâ
20LMB
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PDF
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Untitled
Abstract: No abstract text available
Text: CY7C281 CY7C282 I CYPRESS IK x 8 PROM SEMICONDUCTOR Features • CMOS for optimum speed/power • High speed — 30 ns commercial — 45 ns (military) • Low power — 495 mW (commercial) — 660 mW (military) • EPROM technology 100% programmable • Slim 300-mil or standard 600-mil DIP
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CY7C281
CY7C282
300-mil
600-mil
28-pin
CY7C281
7C282
1024-w
300-m
600-m
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PDF
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Untitled
Abstract: No abstract text available
Text: CY7C191 CY7C192 b m - . C Y PR ESS r SEMICONDUCTOR Features • Automatic power-down when deselected • Transparent write 7C191 • CMOS for optimum speed/power • Highspeed — tAA = 25 ns • Low active power — 880 mW • Low standby power
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CY7C191
CY7C192
7C191)
CY7C192â
35KMB
35LMB
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TAA 293A
Abstract: CY7C smd code LY Q
Text: CY7C291A CY7C292A/CY7C293A r ' Y P P P ’C jc ; —- SEMICONDUCTOR Reprogrammable 2K x 8 PROM • Direct replacement for bipolar PROMi • Capable of withstanding > 2001V stat ic discharge Features • W indowed fo r rep ro g ram m ab ility • C M O S Tor o p tim u m speed/pow er
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CY7C291A
CY7C292A/CY7C293A
300-mil
600-mll
7C291A
7C292A,
7C293A
291-50T
CY7C291
--50W
TAA 293A
CY7C
smd code LY Q
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PDF
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Untitled
Abstract: No abstract text available
Text: CY7C291A CY7C292A/CY7C293A 'W CYPRESS = SEMICONDUCTOR Reprogrammable 2K x 8 PROM Features • Windowed for reprogrammability • CMOS for optimum speed/power • High speed — 2 0 ns commercial — 25 ns (military) • Low power — 660 mW (commercial and military)
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CY7C291A
CY7C292A/CY7C293A
300-mil
600-mil
CY7C291A,
CY7C292A,
CY7C293A
CY7C292Aâ
35DMB
CY7C293Aâ
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PDF
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Untitled
Abstract: No abstract text available
Text: CY7C128 CYPRESS SEMICONDUCTOR Features Functional Description • Automatic power-down when deselected • CMOS for optimum speed/power • Highspeed The CY7C128 is a high-performance CMOS static RAM organized as 2048 words by 8 bits. Easy memory expansion is
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CY7C128
CY7C128
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CERAMIC LEADLESS CHIP CARRIER
Abstract: la crosse technology smd UJ 99 7C245A CY7C245A 0G152
Text: W CYPRESS Features • • W indowed for reprogram m ability • C M O S for optim um speed/power • • • H igh speed — 15-ns ad dress set-up • — 10-ns clock to output • Low power — 330 m W com m ercial for —25 ns — 660 mW (m ilitary) •
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CY7C245A
15-ns
10-ns
300-mil,
24-pin
CY7C245A
progra8735
CY7C245Aâ
25LMB
CERAMIC LEADLESS CHIP CARRIER
la crosse technology
smd UJ 99
7C245A
0G152
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7c198
Abstract: CY7C198-55DMB 19835 CY7C198-15DMB
Text: CY7C198 _ CY7C199 CYPRESS " SEMICONDUCTOR 32,768 x 8 Static RAV RAM both LOW, data on the eight data input/ output pins I/Oo through I/O7 is written into the memoiy location addressed by the address present on the address pins (Ao through A 14). Reading the device is ac
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CY7C198
CY7C199
CY7C198
7c198
CY7C198-55DMB
19835
CY7C198-15DMB
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PDF
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CY7C128A SRAM
Abstract: 7C128A-55 128a
Text: _ CY7C128A ^ S fcO N D U d O R 2048 x 8 Static R/W RAM Features • Capable o f w ithstanding greater than 2001V electrostatic discharge • Automatic power-down when deselected • V ih o f 2.2V • CMOS for optimum speed/power Functional Description
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CY7C128A
CY7C128A SRAM
7C128A-55
128a
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7C271
Abstract: CY7C271-45WMB 333Q C271 7C274 CY7C271 CY7C274 CY7C274-55WC 57C27-1 7C271-55
Text: CY7C271 CY7C274 32K x 8 PROM PowerSwitched and Reprogrammable Features Functional Description • CMOS for optimum speed/power • Windowed for reprogrammability • High speed — 30 ns commercial — 35 ns (military) • Low power — 660 mW (commercial)
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CY7C271
CY7C274
300-mil
7C271)
CY7C274
768-word
7C271/7C274
CY7C271
7C271
CY7C271-45WMB
333Q
C271
7C274
CY7C274-55WC
57C27-1
7C271-55
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PDF
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1531B
Abstract: 3AAG CY7C281A CY7C282A CY7C281A-45PC CY7C281A-45JC
Text: CY7C281A CY7C282A CYPRESS Features • CMOS for optimum speed/power • High speed — 25 ns commercial — 30 ns (military) • Low power — 495 mW (commercial) — 660 mW (military) • EPROM technology 100% programmable • Slim 300-mil or standard 600-mil DIP
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CY7C281A
CY7C282A
300-mil
600-mil
28-pin
1024-word
600-mil-wide
1531B
3AAG
CY7C281A-45PC
CY7C281A-45JC
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PDF
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CY7CI99-55KMB
Abstract: 25L54 7C198-25 7C19825 7C199-15 7C199-25 7C199-35 CY7C198 CY7C199 cy7c199-25vc
Text: CY7C198 CY7C199 CYPRESS -= s SEMICONDUCTOR Features Functional Description • Automatic power-down when deselected • CMOS for optimum speed/power ■ High speed — 25 ns • h ow active power The CY7C198 and CY7C199 are highperformance CMOS static RAM s orga
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CY7C198
CY7C199
300-mil-widD22
CY7C199â
CY7CI99-55KMB
25L54
7C198-25
7C19825
7C199-15
7C199-25
7C199-35
cy7c199-25vc
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PDF
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CY7C291A
Abstract: CY7C292A CY7C293A 57C29
Text: F# CYPRESS Features • Windowed for reprogrammability • CMOS for optimum speed/power • High speed — 20 ns commercial — 25 ns (military) CY7C291A CY7C292A/CY7C293A 2K X 8 Reprogrammable PROM • Direct replacement for bipolar PROMs • Capable o f withstanding >2001V stat
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CY7C291A
CY7C292A/CY7C293A
300-mil
600-mil
CY7C291A,
CY7C292A,
CY7C293A
300-mil
7C291A,
7C293A)
CY7C292A
57C29
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PDF
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Untitled
Abstract: No abstract text available
Text: CY7C187A 5T CYPRESS SEMICONDUCTOR 65,536 x 1 S tatic R /W R A M Features Functional Description • Automatic power-down when deaelected The CY7C187A is a high-performance CMOS static RAM organized as 65,536 words by 1 b it Easy memory expansion is provided by an active LOW chip enable
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OCR Scan
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CY7C187A
7C187A
coat52
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PDF
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C1985
Abstract: No abstract text available
Text: CY7C198 CY7C199 CYPRESS W SEMICONDUCTOR F unctional D escription Automatic power-down when deselected CMOS for optimum speed/power High speed — 25 os Low active power — 880 mW Low standby power — 220 raW TTL-compatible inputs and outputs Capable o f w ithstanding greater than
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OCR Scan
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CY7C198
CY7C199
C1985
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PDF
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Untitled
Abstract: No abstract text available
Text: — CY7C281 CY7C282 - :ï CYPRESS SEMICONDUCTOR Features • CMOS for optimum speed/power • High speed — 30 ns commercial — 45 ns (military) • Low power — 495 mW (commercial) — 660 mW (m ilitary) • EPROM technology 100% programmable • Slim 300-mil or standard 600-mil DIP
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OCR Scan
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300-mil
600-mil
28-pin
CY7C281
CY7C282
282--30PC
282--45PC
282--45D
24-Lead
600-M
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PDF
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