46163 Search Results
46163 Price and Stock
TE Connectivity 5084616-3CONN RCPT 80POS SMD GOLD |
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5084616-3 | Cut Tape | 1,320 | 1 |
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5084616-3 | Reel | 5 Weeks, 3 Days | 1,200 |
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5084616-3 | 245 |
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5084616-3 | Reel | 15,000 | 200 |
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5084616-3 |
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5084616-3 | 5 Weeks | 200 |
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5084616-3 | 3 Weeks, 4 Days | 600 |
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5084616-3 | 15,000 | 200 |
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Molex 0015246163CONN HEADER R/A 16POS 4.2MM |
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0015246163 | Bulk | 1,228 | 1 |
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Phoenix Contact 5446163TERM BLOCK HDR 10POS 5MM |
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5446163 | Bulk | 100 |
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5446163 |
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5446163 | Each | 2,897 | 3 |
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TE Connectivity 1546163-1CONN TERM BLK END PLATE GRAY |
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1546163-1 | Bulk | 7 Weeks | 1,500 |
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1546163-1 | Bulk | 1,500 |
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1546163-1 | Each | 1 |
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1546163-1 | 1 |
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1546163-1 |
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Molex 0459846163CONN RCPT LPHPOWER 38POS PCB |
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0459846163 | Tray | 700 |
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0459846163 | 700 |
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46163 Datasheets Context Search
Catalog Datasheet |
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Contextual Info: VIS Preliminary 4616321B/4616322B 262,144x32x2-Bit CMOS Synchronous Graphic RAM Overview The V G 4616321 2 SG R AM is a high-speed C M O S syn ch ro n o u s g raphics RAM containing 16M bits. It is internally configured as a dual 256K x 32 DRAM w ith a synch ro n o u s interface (all signals are registered on |
OCR Scan |
VG4616321B/VG4616322B 144x32x2-Bit G5-0145 | |
Contextual Info: General Information & Indexes US Sales Representatives. 8 8 3 2 3 1 3 11 7 2 1 2 4 15 2 1 13 1 2 4 4 15 12 4 1 6 6 14 10 14 McNamara Associates, 5936 Busch Drive, Malibu, CA 90265, Tel: 310-457-4478 Express #: 800-542-4457 Fax: 775-261-5235 email: gjmc@aol.com |
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3115-P | |
PICO Electronics 47231
Abstract: 50241 PICO 49461 270 microHenry 4836 49441 50161 inductors 10 micro henry inductors 50 micro henry 4557
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MIL-PRF-27, PICO Electronics 47231 50241 PICO 49461 270 microHenry 4836 49441 50161 inductors 10 micro henry inductors 50 micro henry 4557 | |
CY62128DV30
Abstract: CY62128EV30 CY62128EV30LL CY62128EV30LL-45SXI CY62128EV30LL-45ZAXI CY62128EV30LL-45ZXA CY62128EV30LL-45ZXI CY62128EV30LL-55ZXE
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CY62128EV30 CY62128DV30 CY62128EV30LL CY62128EV30LL-45SXI CY62128EV30LL-45ZAXI CY62128EV30LL-45ZXA CY62128EV30LL-45ZXI CY62128EV30LL-55ZXE | |
Contextual Info: CY62128EV30 MoBL 1-Mbit 128 K x 8 Static RAM 1-Mbit (128 K × 8) Static RAM Features Functional Description • Very high speed: 45 ns The CY62128EV30 is a high performance CMOS static RAM module organized as 128K words by 8-bits. This device features |
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CY62128EV30 | |
CY62128B
Abstract: CY62128E CY62128ELL CY62128ELL-45SXA CY62128ELL-45SXI CY62128ELL-45ZAXI CY62128ELL-45ZXA CY62128ELL-45ZXI
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CY62128E CY62128B CY62128ELL CY62128ELL-45SXA CY62128ELL-45SXI CY62128ELL-45ZAXI CY62128ELL-45ZXA CY62128ELL-45ZXI | |
ITT DBM-25P
Abstract: 609-50P 0903 196 2921 HFM068A 609-50300 0903 164 2921 622-5016ES ADE-9S-1A2N-A197 622-5024ES HFM026A
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1016029C01 ITT DBM-25P 609-50P 0903 196 2921 HFM068A 609-50300 0903 164 2921 622-5016ES ADE-9S-1A2N-A197 622-5024ES HFM026A | |
rtc ds130Contextual Info: Surge Protection AC & DC Power Photovoltaic Telecom Dataline Coaxial SURGE PROTECTORS for AC & DC Power, Photovoltaic, Telecom, Dataline, & Coaxial - 9 t h e d i t i o n , N o r t h A m e r i c a 9 th E d i t i o n North America 1 9 th E d i t i o n North America |
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RU-105082 rtc ds130 | |
Contextual Info: CY62128EV30 MoBL 1-Mbit 128 K x 8 Static RAM 1-Mbit (128 K × 8) Static RAM Functional Description Features The CY62128EV30 is a high performance CMOS static RAM module organized as 128K words by 8-bits. This device features advanced circuit design to provide ultra low active current. This |
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CY62128EV30 | |
Contextual Info: THIS SPEC IS OBSOLETE Spec No: 001-06348 Spec Title: CY7C1248V18, CY7C1250V18 36-Mbit DDR II+ SRAM 2-Word Burst Architecture 2.0 Cycle Read Latency Sunset Owner: Jayasree Nayar Replaced by: None CY7C1248V18 CY7C1250V18 36-Mbit DDR II+ SRAM 2-Word Burst Architecture (2.0 Cycle Read Latency) |
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CY7C1248V18, CY7C1250V18 36-Mbit CY7C1248V18 CY7C1250V18 | |
AN1064
Abstract: CY62126DV30 CY62126EV30 CY62126EV30LL-45BVXI CY62126EV30LL-45ZSXI CY62126EV30LL-55BVXE
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CY62126EV30 CY62126EV30 AN1064 CY62126DV30 CY62126EV30LL-45BVXI CY62126EV30LL-45ZSXI CY62126EV30LL-55BVXE | |
CY7C1250V18-333BZC
Abstract: CY7C1246V18 CY7C1248V18 CY7C1250V18 CY7C1257V18
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CY7C1246V18 CY7C1257V18 CY7C1248V18 CY7C1250V18 36-Mbit CY7C1246V18, CY7C1257V18, CY7C1248V18, CY7C1250V18 CY7C1250V18-333BZC CY7C1246V18 CY7C1248V18 CY7C1257V18 | |
Contextual Info: CY62128E MoBL 1-Mbit 128 K x 8 Static RAM 1-Mbit (128 K × 8) Static RAM Features Functional Description • Very high speed: 45 ns The CY62128E is a high performance CMOS static RAM organized as 128K words by 8 bits. This device features advanced circuit design to provide ultra low active current. This |
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CY62128E | |
48381
Abstract: inductors 10 micro-henry
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MIL-PRF-27, 48381 inductors 10 micro-henry | |
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Contextual Info: CY7C1268V18 CY7C1270V18 PRELIMINARY 36-Mbit DDR-II+ SRAM 2-Word Burst Architecture 2.5 Cycle Read Latency Features Functional Description • • • • 36-Mbit density (2M x 18, 1M x 36) 300 MHz to 400 MHz clock for high bandwidth 2-Word burst for reducing address bus frequency |
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CY7C1268V18 CY7C1270V18 36-Mbit 165-bas | |
Contextual Info: CY62128E MoBL 1-Mbit 128K x 8 Static RAM Functional Description[1] Features • • • • The CY62128E is a high-performance CMOS static RAM organized as 128K words by 8 bits. This device features advanced circuit design to provide ultra-low active current. |
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CY62128E CY62128B 32-lead | |
SKIIP 33 nec 125 t2
Abstract: skiip 613 gb 123 ct RBS 6302 ericsson SKIIP 513 gb 173 ct THERMISTOR ml TDK 150M pioneer PAL 010a Project Report of smoke alarm using IC 555 doc SKiip 83 EC 125 T1 ericsson RBS 6000 series INSTALLATION MANUAL Ericsson Installation guide for RBS 6302
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734TL UWEB-MODEM-34 HCS412/WM TLV320AIC10IPFB 100MB NEON250 GA-60XM7E BLK32X40 BLK32X42 SKIIP 33 nec 125 t2 skiip 613 gb 123 ct RBS 6302 ericsson SKIIP 513 gb 173 ct THERMISTOR ml TDK 150M pioneer PAL 010a Project Report of smoke alarm using IC 555 doc SKiip 83 EC 125 T1 ericsson RBS 6000 series INSTALLATION MANUAL Ericsson Installation guide for RBS 6302 | |
Contextual Info: CY62126EV30 MoBL 1-Mbit 64 K x 16 Static RAM 1-Mbit (64 K × 16) Static RAM Features Functional Description • High speed: 45 ns The CY62126EV30 is a high performance CMOS static RAM organized as 64K words by 16 bits. This device features advanced circuit design to provide ultra low active current. This |
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CY62126EV30 I/O15) | |
Contextual Info: CY62126EV30 MoBL 1-Mbit 64 K x 16 Static RAM 1-Mbit (64 K × 16) Static RAM Features Functional Description • High speed: 45 ns ■ Temperature ranges ❐ Industrial: –40 °C to +85 °C ❐ Automotive-A: –40 °C to +85 °C ❐ Automotive-E: –40 °C to +125 °C |
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CY62126EV30 CY62126DV30 | |
CY7C1250V18-333BZC
Abstract: CY7C1248V18 CY7C1250V18
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CY7C1248V18 CY7C1250V18 36-Mbit CY7C1248V18, CY7C1250V18 CY7C1250V18-333BZC CY7C1248V18 | |
ITE 8987
Abstract: Z436 transistor tic 913 4-701 76141 EE 19 Switching Transformer ML/82x33/587/OS/ITE 8987
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OCR Scan |
80C26 10Base-T ITE 8987 Z436 transistor tic 913 4-701 76141 EE 19 Switching Transformer ML/82x33/587/OS/ITE 8987 | |
Contextual Info: CY62128E MoBL 1-Mbit 128 K x 8 Static RAM 1-Mbit (128 K × 8) Static RAM Features Functional Description • Very high speed: 45 ns The CY62128E is a high performance CMOS static RAM organized as 128K words by 8 bits. This device features advanced circuit design to provide ultra low active current. This |
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CY62128E | |
Contextual Info: CY62126EV30 MoBL 1-Mbit 64 K x 16 Static RAM 1-Mbit (64 K × 16) Static RAM Features Functional Description • High speed: 45 ns The CY62126EV30 is a high performance CMOS static RAM organized as 64K words by 16 bits. This device features advanced circuit design to provide ultra low active current. This |
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CY62126EV30 I/O15) | |
AN1384Contextual Info: CY62126EV30 MoBL 1-Mbit 64 K x 16 Static RAM 1-Mbit (64 K × 16) Static RAM Features Functional Description • High speed: 45 ns The CY62126EV30 is a high performance CMOS static RAM organized as 64K words by 16 bits. This device features advanced circuit design to provide ultra low active current. This |
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CY62126EV30 I/O15) 727-CY26EV30LL45ZSXI CY62126EV30LL-45ZSXI AN1384 |