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    Bimba Manufacturing Company PC-046-DBM

    Cylinder, O.L., Plastic End Caps; 3/4In Bore; Stroke: 6In; F Nose, Bump ,Magnet | Bimba PC-046-DBM
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS PC-046-DBM Bulk 5 Weeks 1
    • 1 $121.15
    • 10 $121.15
    • 100 $121.15
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    Bimba Manufacturing Company LT-046-DBM

    Cylinder, O.L., With Magnet ; 3/4In Bore; Stroke: 6In; Dbl Act/FN Mt, Bump | Bimba LT-046-DBM
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS LT-046-DBM Bulk 5 Weeks 1
    • 1 $74.4
    • 10 $74.4
    • 100 $74.4
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    • 10000 $74.4
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    Bimba Manufacturing Company LT-3146-DBM

    Thruster, Linear Thruster Cylinder ; 2in Bore ; Stroke: 46 in; Double Acting ; | Bimba LT-3146-DBM
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS LT-3146-DBM Bulk 5 Weeks 1
    • 1 $373.25
    • 10 $373.25
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    Bimba Manufacturing Company LT-046-DBMQ

    Thruster, Linear Thruster Cylinder ; 3/4in Bore ; Stroke: 6 in; Double Acting ; | Bimba LT-046-DBMQ
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS LT-046-DBMQ Bulk 5 Weeks 1
    • 1 $74.41
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    • 100 $74.41
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    • 10000 $74.41
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    Bimba Manufacturing Company LT-046-DBMV

    Thruster, Linear Thruster Cylinder ; 3/4in Bore ; Stroke: 6 in; Double Acting ; | Bimba LT-046-DBMV
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS LT-046-DBMV Bulk 5 Weeks 1
    • 1 $93.1
    • 10 $93.1
    • 100 $93.1
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    46DBM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    EIA1414-2P

    Abstract: EIB1414-2P
    Text: Excelics EIA/EIB1414-2P PRELIMINARY DATA SHEET 14.0-14.5GHz, 2W Internally Matched Power FET • • • • • • 14.0-14.5GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM EIA FEATURES HIGH PAE 30% TYPICAL EIB FEATURES HIGH IP3(46dBm TYPICAL)


    Original     		PDF EIA/EIB1414-2P 46dBm EIA1414-2P 180mA 32dBm 175oC 150oC 45dBc 23dBm/Tone -65/150oC EIA1414-2P EIB1414-2P

    EIA1818-2P

    Abstract: EIB1818-2P f1815
    Text: Excelics EIA/EIB1818-2P PRELIMINARY DATA SHEET 18.15-18.75GHz, 2W Internally Matched Power FET • • • • • • 18.15-18.75GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM EIA FEATURES HIGH PAE 25% TYPICAL EIB FEATURES HIGH IP3(46dBm TYPICAL)


    Original     		PDF EIA/EIB1818-2P 75GHz, 75GHz 46dBm EIA1818-2P EIB1818-2P 75GHz 180mA 32dBm 175oC EIA1818-2P EIB1818-2P f1815

    EIA1718-2P

    Abstract: EIB1718-2P
    Text: Excelics EIA/EIB1718-2P PRELIMINARY DATA SHEET 17.7-18.7GHz, 2W Internally Matched Power FET • • • • • • 17.7-18.7GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM EIA FEATURES HIGH PAE 25% TYPICAL EIB FEATURES HIGH IP3(46dBm TYPICAL)


    Original     		PDF EIA/EIB1718-2P 46dBm EIA1718-2P 180mA 32dBm 175oC 150oC 45dBc 23dBm/Tone -65/150oC EIA1718-2P EIB1718-2P

    LM79GCP

    Abstract: EIA1819-2P EIB1819-2P
    Text: Excelics EIA/EIB1819-2P PRELIMINARY DATA SHEET 18.7-19.7GHz, 2W Internally Matched Power FET • • • • • • 18.7-19.7GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM EIA FEATURES HIGH PAE 25% TYPICAL EIB FEATURES HIGH IP3(46dBm TYPICAL)


    Original     		PDF EIA/EIB1819-2P 46dBm EIA1819-2P 180mA 32dBm 175oC 150oC 45dBc 23dBm/Tone -65/150oC LM79GCP EIA1819-2P EIB1819-2P

    EIA1314-2P

    Abstract: EIB1314-2P
    Text: Excelics EIA/EIB1314-2P PRELIMINARY DATA SHEET 13.75-14.5GHz, 2W Internally Matched Power FET • • • • • • 13.75-14.5GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM EIA FEATURES HIGH PAE 30% TYPICAL EIB FEATURES HIGH IP3(46dBm TYPICAL)


    Original     		PDF EIA/EIB1314-2P 46dBm EIA1314-2P 180mA 32dBm 175oC 150oC 45dBc 23dBm/Tone -65/150oC EIA1314-2P EIB1314-2P

    EIA1213-2P

    Abstract: EIB1213-2P
    Text: Excelics EIA/EIB1213-2P PRELIMINARY DATA SHEET 12.75-13.25GHz, 2W Internally Matched Power FET • • • • • • 12.75-13.25GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM EIA FEATURES HIGH PAE 30% TYPICAL EIB FEATURES HIGH IP3(46dBm TYPICAL)


    Original     		PDF EIA/EIB1213-2P 25GHz, 25GHz 46dBm EIA1213-2P EIB1213-2P 25GHz 180mA 32dBm 175oC EIA1213-2P EIB1213-2P

    diode 1GHz

    Abstract: EIA1718A-2P EIB1718A-2P
    Text: Excelics EIA/EIB1718A-2P PRELIMINARY DATA SHEET 17.3-18.1GHz, 2W Internally Matched Power FET • • • • • • 17.3-18.1GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM EIA FEATURES HIGH PAE 25% TYPICAL EIB FEATURES HIGH IP3(46dBm TYPICAL)


    Original     		PDF EIA/EIB1718A-2P 46dBm EIA1718A-2P 180mA 32dBm 175oC 150oC 45dBc 23dBm/Tone -65/150oC diode 1GHz EIA1718A-2P EIB1718A-2P

    Untitled

    Abstract: No abstract text available
    Text: Push Pull Type Power Transistor RT440 Product Features Application • Frequency Range = 50MHz ~ 6GHz • High Output Power P1dB = 43dBm Typ. @2.14GHz P3dB = 46dBm(Typ.)@2.14GHz • High Efficiency • High In/Out Impedance • High Power Gain G1dB = 18dB(Typ.)@900MHz


    Original     		PDF RT440 50MHz 43dBm 14GHz 46dBm 900MHz IMT-2000 WP-14

    Untitled

    Abstract: No abstract text available
    Text: Push Pull Type Power Transistor RT440 Product Features Application • Frequency Range = 50MHz ~ 6GHz • High Output Power P1dB = 43dBm Typ. @2.14GHz P3dB = 46dBm(Typ.)@2.14GHz • High Efficiency • High In/Out Impedance • High Power Gain G1dB = 18dB(Typ.)@900MHz


    Original     		PDF RT440 50MHz 43dBm 14GHz 46dBm 900MHz IMT-2000 WP-14

    Untitled

    Abstract: No abstract text available
    Text: High Power Amplifier Module 935 – 960MHz, 23dB AM091047SF-2H April 2010 Rev 3 DESCRIPTION AMCOM's AM091047SF-2H is a Cellular Broadband Power Amplifier designed for high power applications. The class AB amplifier operates from 935 to 960MHz and delivers a minimum P1dB of +46dBm and a


    Original     		PDF 960MHz, AM091047SF-2H AM091047SF-2H 960MHz 46dBm 57dBm)

    FLL21E180IU

    Abstract: No abstract text available
    Text: FLL21E180IU High Voltage - High Power GaAs FET FEATURES ・High Voltage Operation : VDS=28V ・High Gain: 15.0dB typ. at Pout=46dBm(Avg.) ・Broad Frequency Range : 2100 to 2200MHz ・Proven Reliability DESCRIPTION The FLL21E180IU is a high power GaAs FET that offers high efficiency,


    Original     		PDF FLL21E180IU 46dBm 2200MHz FLL21E180IU

    LTC5567

    Abstract: No abstract text available
    Text: LTC6417 1.6GHz Low Noise High Linearity Differential Buffer/16-Bit ADC Driver with Fast Clamp DESCRIPTION FEATURES 1.6GHz –3dB Small Signal Bandwidth Low Distortion Driving 50Ω Load, 2.4VP-P Out –100dBc/–69dBc HD2/HD3 at 140MHz –80dBc IM3 and 46dBm OIP3 at 140MHz


    Original     		PDF LTC6417 Buffer/16-Bit 100dBc/â 69dBc 140MHz 80dBc 46dBm 66dBc LTC5567

    Untitled

    Abstract: No abstract text available
    Text: RFPA3807 RFPA3807 GaAs HBT 400MHz to 2700MHz Power Amplifier GaAs HBT 400MHz TO 2700MHz POWER AMPLIFIER Package: SOIC-8 Features  High Linearity: OIP3=46dBm at 880MHz  Low Noise: NF<4dB  Low DC Power: 5V, 90mA  400MHz to 2700MHz Operation  Thermally Enhanced Slug


    Original     		PDF RFPA3807 400MHz 2700MHz 2700MHz 46dBm 880MHz

    EIA1011-2P

    Abstract: EIB1011-2P
    Text: Excelics EIA/EIB1011-2P PRELIMINARY DATA SHEET 10.7-11.7GHz, 2W Internally Matched Power FET • • • • • • 10.7-11.7GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM EIA FEATURES HIGH PAE 30% TYPICAL EIB FEATURES HIGH IP3(46dBm TYPICAL)


    Original     		PDF EIA/EIB1011-2P 46dBm EIA1011-2P 180mA 32dBm 175oC 150oC 45dBc 23dBm/Tone -65/150oC EIA1011-2P EIB1011-2P

    EIA1415-2P

    Abstract: EIB1415-2P
    Text: Excelics EIA/EIB1415-2P PRELIMINARY DATA SHEET 14.40-15.35GHz, 2W Internally Matched Power FET • • • • • • 14.40-15.35GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM EIA FEATURES HIGH PAE 27% TYPICAL EIB FEATURES HIGH IP3(46dBm TYPICAL)


    Original     		PDF EIA/EIB1415-2P 35GHz, 35GHz 46dBm EIA1415-2P EIB1415-2P 35GHz 180mA 32dBm 175oC EIA1415-2P EIB1415-2P

    Untitled

    Abstract: No abstract text available
    Text: Preliminary DS/SGN31E030MK High Voltage - High Power GaN-HEMT Driver for Radar FEATURES •High Voltage Operation : VDS=50V •High Power : 46dBm typ. @ Pin=2.5W (34dBm) •High Linear Gain : 15dB(typ.) @ f=3.1GHz DESCRIPTION Sumitomo GaN-HEMT DS/SGN31E030MK offers high efficiency, ease of


    Original     		PDF DS/SGN31E030MK 46dBm 34dBm) DS/SGN31E030MK 200mA, 200msec,

    Untitled

    Abstract: No abstract text available
    Text: RFPA3807 RFPA3807 GaAs HBT 400MHz to 2700MHz Power Amplifier GaAs HBT 400MHz TO 2700MHz POWER AMPLIFIER Package: SOIC-8 Features  High Linearity: OIP3=46dBm at 880MHz  Low Noise: NF<4dB  Low DC Power: 5V, 90mA  400MHz to 2700MHz Operation  Thermally Enhanced Slug


    Original     		PDF RFPA3807 400MHz 2700MHz 2700MHz 46dBm 880MHz

    TR9770

    Abstract: No abstract text available
    Text: Available as: RF AMPLIFIER MODEL TR9770 TR9770, 4 Pin TO-8B T8 TR9770-9, 12 Pin TO-8B (T9) RN9770, 4 Pin Surface Mount (SM 19) BR9770, Connectorized Housing (H2) Features Typical Intermodulation Performance at 25 0 C • ■ ■ ■ Second Order Harmonic Intercept Point+46dBm (Typ.)


    OCR Scan     		PDF TR9770 TR9770, TR9770-9, RN9770, BR9770, 46dBm 40dBm 25dBm Stop1200 TR9770

    Untitled

    Abstract: No abstract text available
    Text: RF AMPLIFIER MODEL TR9756 Available as: Features Typical Intermodulation Performance at 2 5 0 C • ■ ■ ■ Second Order Harmonic Intercept Point.+46dBm Typ. Second Order Two Tone Intercept Point. +40 dBm (Typ.) Third Order Two Tone Intercept Point.+26 dBm (Typ.)


    OCR Scan     		PDF TR9756 TR9756, TR9756-9, RN9756, BR9756, 46dBm S11-------Deg ---------321Mag S12--------Deg ---------322Mag

    Untitled

    Abstract: No abstract text available
    Text: RF AMPLIFIER MODEL TR9771 Available as: Features Typical Intermodulation Performance at 2 5 0 C • ■ ■ ■ Second Order Harmonic Intercept Point. +46dBm Typ. Second Order Two Tone Intercept Point. ,+4CdBm(Typ.) Third Order Two Tone Intercept Point. +26dBm (Typ.)


    OCR Scan     		PDF TR9771 TR9771-9, RN9771, BR9771, 46dBm 26dBm S11--------Mag S21-----Deg S12--------Mag S22--------Deg

    Untitled

    Abstract: No abstract text available
    Text: RF AMPLIFIER MODEL TR9772 A v a ila b le as: Features Typical Intermodulation Performance at 2 5 0 C • ■ ■ ■ Second Order Harmonic Intercept Point +46dBm Typ. Second Order Two Tone Intercept Point.+40dBm (Typ.) Third Order Two Tone Intercept Point. +26dBm (Typ.)


    OCR Scan     		PDF TR9772 46dBm 40dBm 26dBm 1700-2400MHZ S11-------Deg ---------S21---------Mag S12--------Deg S22--------Deg

    Untitled

    Abstract: No abstract text available
    Text: SHF-1000 DC -8 GHz, 4 Watt AIGaAs/GaAs HFET Preliminary Data Features - AIGaAs/GaAs Heterostructure FET Technology - +36dBm Output Power at 1dB Compression - High Power Added Efficiency: Up to 40% - +46dBm Output 3rd Order Intercept Point • Low Cost Copper Tungsten Package


    OCR Scan     		PDF SHF-1000 36dBm 46dBm 900mA)

    SMM-280-4

    Abstract: s parameters 4ghz
    Text: SMM-280-4 1.5-2.7 GHz, 4 Watt GaAs MMIC Amplifier April, 1995 Features - 24dB Gain and 36dBm Output Power - High Third Order Intercept, +46dBm Typ - High Power Added Efficiency - Low VSWR 1.7:1 Typical - Copper-Tungsten Package ,6 4 0 - P 2X .5 60 2X .0 40


    OCR Scan     		PDF SMM-280-4 36dBm 46dBm 3600m 1000m s parameters 4ghz

    124500

    Abstract: 121-430 sn 2509 k
    Text: « HSXAWAVS Features HWF1687RA Medium Power GaAs FET September 1998 Rev.B • Output Power P id B = 3 1.5dBm typ. @2.4GHz • High Gain G l= 16dB(typ.)@2.4GHz OUTLINE DRAW ING • High Efficiency T|add =45%(typ.)@2.4GHz • High Linearity IP3=46dBm(typ.)@2.4GHz


    OCR Scan     		PDF HWF1687RA 46dBm F1687RA 124500 121-430 sn 2509 k