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    YAGEO Corporation P6KE47A-B

    TVS DIODE 40.2VWM 64.8V DO204AC
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    DigiKey P6KE47A-B Cut Tape 2,000 1
    • 1 $0.46
    • 10 $0.272
    • 100 $0.1664
    • 1000 $0.10787
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    P6KE47A-B Ammo Pack 2,000 2,000
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    • 10000 $0.0645
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    Rochester Electronics LLC AD7247ABN

    DAC, 2 CH, PARALLEL, WORD INPUT
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    DigiKey AD7247ABN Tube 1,228 6
    • 1 -
    • 10 $50.25
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    YAGEO Corporation 1.5KE47A-B

    TVS DIODE 40.2VWM 64.8VC DO201
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    DigiKey 1.5KE47A-B Cut Tape 1,000 1
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    • 100 $0.2298
    • 1000 $0.17062
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    1.5KE47A-B Ammo Pack 1,000 1,000
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    • 10000 $0.10774
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    Littelfuse Inc 1.5KE47A-B

    TVS DIODE 40.2VWM 64.8VC DO201
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    DigiKey 1.5KE47A-B Bulk 599 1
    • 1 $0.7
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    • 100 $0.338
    • 1000 $0.223
    • 10000 $0.188
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    Newark 1.5KE47A-B Bulk 500
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    RS 1.5KE47A-B Bulk 8 Weeks 500
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    TME 1.5KE47A-B 1
    • 1 $0.732
    • 10 $0.479
    • 100 $0.28
    • 1000 $0.223
    • 10000 $0.223
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    Skyworks Solutions Inc SI5347A-B-GM

    IC CLK BUFFER PLL 64QFN
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    DigiKey SI5347A-B-GM Tray 500 1
    • 1 $71.01
    • 10 $56.725
    • 100 $56.725
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    Rochester Electronics SI5347A-B-GM 3,494 1
    • 1 $65.24
    • 10 $65.24
    • 100 $61.33
    • 1000 $55.45
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    Win Source Electronics SI5347A-B-GM 1,000
    • 1 $77.778
    • 10 $63.195
    • 100 $63.195
    • 1000 $63.195
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    47 AB Datasheets Context Search

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    PDF

    Coaxial Switches

    Abstract: No abstract text available
    Text: Series CCS-47/CS-47 COAX SWITCHES High Power DC–12 GHz Latching TRANSFER Coaxial Switch PART NUMBER DESCRIPTION CCS-47 Commercial Latching TRANSFER, DC-12GHz CS-47 Elite Latching TRANSFER, DC-12GHz The CCS-47/CS-47 is a long-life high performance transfer switch designed for use in 50 Ohms coaxial


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    CCS-47/CS-47 CCS-47 DC-12GHz CS-47 CCS-47/CS-47 CS-47TX0-M CS-47TXC-MS CS-47TX0-MS CS-47TXC-R Coaxial Switches PDF

    Untitled

    Abstract: No abstract text available
    Text: Part Number: Description: 4107 010008 Packaged part # Bulk part # 1 BU-45 (2) BU-47-0 (3) BU-47-2 • #010008 Packaged parts • Includes: BU-45 (4) BU-47-0 (2) BU-47-2 (2) • More details about bulk parts number refer to relative datasheets


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    BU-45 BU-47-0 BU-47-2 PDF

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PEMH2 NPN resistor-equipped transistors; R1 = 47 kΩ, R2 = 47 kΩ Preliminary specification 2001 Oct 22 Philips Semiconductors Preliminary specification NPN resistor-equipped transistors; R1 = 47 kΩ, R2 = 47 kΩ


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    M3D744 SC-75/SC-89 SCA73 613514/01/pp8 PDF

    6605814-6

    Abstract: DVI Male 30 5 (DVI-I) to VGA Female Adapter DIN 45322 female jacks RCA 40250 how to make a scart to dvi-d cable 5-6605758-1 6450370-5 DIN 41524 IEC603-8 1474654-3
    Text: Preferred Parts Catalogue Interconnection Anglia Tel : +44 0 1945 47 47 47 Fax : +44 (0)1945 47 48 49 Sandall Road, Wisbech, PE13 2PS UK www.anglia.com info@anglia.com RoHS Ready Product Technology Overview Internal Equipment Connection Pages 1 - 78 Terminals & Splices


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    PDF

    PUMD12

    Abstract: PEMD12 PEMB2
    Text: DISCRETE SEMICONDUCTORS DATA SHEET PEMD12; PUMD12 NPN/PNP resistor-equipped transistors; R1 = 47 kΩ, R2 = 47 kΩ Product data sheet Supersedes data of 2001 Nov 7 2003 Oct 08 NXP Semiconductors Product data sheet NPN/PNP resistor-equipped transistors; R1 = 47 kΩ, R2 = 47 kΩ


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    PEMD12; PUMD12 R75/03/pp8 PUMD12 PEMD12 PEMB2 PDF

    MMDT511HW

    Abstract: 5114 MMDT5116W
    Text: MMDT5110WMMDT511ZW PNP Silicon Epitaxial Planar Digital Transistor Collector Output Base (Input) R1 R2 Emitter (Common) Resistance Values Type R1 (KΩ) R2 (KΩ) Type R1 (KΩ) R2 (KΩ) MMDT5110W 47 - MMDT511DW 47 10 MMDT5111W 10 10 MMDT511EW 47 22


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    MMDT5110W. MMDT511ZW MMDT5110W MMDT511DW MMDT5111W MMDT511EW MMDT5112W MMDT511FW MMDT5113W MMDT511HW MMDT511HW 5114 MMDT5116W PDF

    OP-47

    Abstract: raytheon OP47 op47 OP47BD OP47G OP47GM op47gt OP-47BT OP-47CT OP47AD
    Text: Operational Amplifiers OP-47 OP-47 Low Noise, High Slew Rate Operational Amplifier Description The OP-47 is designed for instrumentation grade signal conditioning where low noise both spectral density and burst , wide bandwidth, and high slew rate are required along with low


    OCR Scan
    OP-47 OP-47 600i2 OP-47_ raytheon OP47 op47 OP47BD OP47G OP47GM op47gt OP-47BT OP-47CT OP47AD PDF

    PEMD48

    Abstract: PUMD48 transistor TR1
    Text: DISCRETE SEMICONDUCTORS DATA SHEET PEMD48; PUMD48 NPN/PNP resistor-equipped transistors; R1 = 47 kΩ, R2 = 47 kΩ and R1 = 2.2 kΩ, R2 = 47 kΩ Product specification Supersedes data of 2004 Jun 02 2004 Jun 24 Philips Semiconductors Product specification


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    PEMD48; PUMD48 47e-mail SCA76 R75/04/pp12 PEMD48 PUMD48 transistor TR1 PDF

    diode Zenner 12V

    Abstract: fuji capacitor 200w computer power supply Circuit diagram zenner 15V 12v 200W AUDIO AMPLIFIER CIRCUIT DIAGRAM 12v to Amplifier 200w circuit diagrams 2SK3677-01MR equivalent AN-027E D5SBA60 ERA92 DIODE
    Text: FA5546 / 47 Fuji Electric Switching Power Supply Control IC Green Mode PWM IC FA5546 / 47 2 Stage OLP Type Application Note December -2008 Fuji Electric Device Technology Co., Ltd. AN-027E Rev.0.3 December -2008 1 Fuji Electric Device Technology FA5546 / 47


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    FA5546 AN-027E 115Vac 230Vac diode Zenner 12V fuji capacitor 200w computer power supply Circuit diagram zenner 15V 12v 200W AUDIO AMPLIFIER CIRCUIT DIAGRAM 12v to Amplifier 200w circuit diagrams 2SK3677-01MR equivalent D5SBA60 ERA92 DIODE PDF

    Untitled

    Abstract: No abstract text available
    Text: OPA547 OPA 5 47 OPA 5 47 OPA 5 47 SBOS056F – JANUARY 2002 – JULY 2005 High-Voltage, High-Current OPERATIONAL AMPLIFIER FEATURES DESCRIPTION ● WIDE SUPPLY RANGE Single Supply: +8V to +60V Dual Supply: ±4V to ±30V ● HIGH OUTPUT CURRENT: 500mA Continuous


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    OPA547 SBOS056F 500mA O-220, OPA547 PDF

    c 3807

    Abstract: ttl cmos advantages disadvantages idt 3805 FCT3805 TRANSISTOR C 3807 transistor 805A
    Text: CLOCK AND SIGNAL DISTRIBUTION USING IDT CLOCK BUFFERS APPLICATION NOTE AN-150 Integrated Device Technology, Inc. By Anupama Hegde INTRODUCTION Decoupling . 46 EMI 47 SUMMARY . 47


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    AN-150 c 3807 ttl cmos advantages disadvantages idt 3805 FCT3805 TRANSISTOR C 3807 transistor 805A PDF

    Untitled

    Abstract: No abstract text available
    Text: Model 47 UltraStable Medical Instrumentation PC Board Mountable Pressure Sensor Calibration 0-100 mV Output Process Control Gage and Absolute Pressure Factory Automation Wide Temperature Range Air Flow Management Leak Detection DESCRIPTION The Model 47 is high performance, temperature compensated,


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    temperature sensor 750 C

    Abstract: 0-250PSI
    Text: Model 47 UltraStable Medical Instrumentation PC Board Mountable Pressure Sensor Calibration 0-100 mV Output Process Control Gage and Absolute Pressure Factory Automation Wide Temperature Range Air Flow Management Leak Detection DESCRIPTION The Model 47 is a high performance, temperature compensated,


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    PDF

    KSR1204

    Abstract: KSR2204
    Text: KSR1204 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1 =47 , R2=47 ) • Complement to KSR2204 Ï TO-92S Ï Î) ABSOLUTE MAXIMUM RATINGS (TA=25


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    KSR1204 KSR2204 O-92S KSR1204 KSR2204 PDF

    Untitled

    Abstract: No abstract text available
    Text: SBBA-120-47-02-SMA DATA SHEET 6 GHz to 12 GHz, 47 dB Gain Broadband High Gain Amplifier with 2 Watt and SMA SBBA-120-47-02-SMA is a 2W wideband coaxial power amplifier operating in the 6 to 12 GHz frequency range. The amplifier offers 33 dBm min of P1db and high


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    SBBA-120-47-02-SMA SBBA-120-47-02-SMA -high-gain-amplifier-sbba-120-47-02-sma-p PDF

    108-18055

    Abstract: bon sertissage 114-18022-0 108-18025 moteur pas a pas
    Text: Spécification produit 108-15225-1 CONNECTEUR 47 VOIES ABS POUR CONTACT MICRO-TIMER II ET STANDARD-POWER-TIMER 29 SEP 05 Rév. F 1. DOMAINE D'APPLICATION Cette spécification définit les caractéristiques techniques et les performances du connecteur 47 voies étanche


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    capacitor 22uF 250V SMD

    Abstract: 0.22uf 250v capacitor 33uf smd CKG57D
    Text: 481_CKG 1/1 Ceramic Capacitors CKG Series Mega Cap SMD CKG57D 150µF(68µF x2) 100µF(47µF ×2) 47µF(22µF ×2) 22µF(10µF ×2) CKG57D 6max. 7max. W max. CKG45D 68µF(33µF ×2) 47µF(22µF ×2) – 10µF(4.7µF ×2) CKG45D 5.5max. Rated voltage DC.10V


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    CKG45D CKG57D capacitor 22uF 250V SMD 0.22uf 250v capacitor 33uf smd PDF

    CD860

    Abstract: IFN860 NJ3600L IF3602 IFN5911 IFN5912
    Text: Databook.fxp 1/14/99 11:32 AM Page B-47 B-47 01/99 IFN5911, IFN5912 N-Channel Dual Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ VHF Amplifiers ¥ Wideband Differential Amplifiers Continuous Forward Gate Current Continuous Device Power Dissipation


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    IFN5911, IFN5912 IFN5911 CD860 IFN860 NJ3600L IF3602 IFN5911 IFN5912 PDF

    B65943

    Abstract: B65943-A-X22 B65944 B65944-B-T1
    Text: PS 47 x 14,9 B65943 Core and Accessories B65944 Core ø5,5+0.2 34 _ 1,1 range from about 30 to 300 kHz 8,1 39+1,1 ø20 _ 0,6 6 • Recommended for new designs ■ For inductive proximity switches ■ Material N22 for the frequency 10+0,5 14 _ 0,7 47 _ 1,3


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    B65943 B65944 FPK0334-J B65943-A-X22 B65944-B-T1 FPK0192-Y B65943 B65943-A-X22 B65944 B65944-B-T1 PDF

    TANTALUM capacitor ESR vs frequency

    Abstract: 2TPE470M6 2TPLF470M4E sanyo tplf 6TPC47MB 2TPSF270M9G 6TPB100MA Electrolytic Capacitor 25V 470uf poscap WAVE Soldering guidelines ELECTROLYTIC
    Text: Characteristics 1. POSCAP Electrical characteristics 1-1. Frequency characteristics Fig.A Impedance frequency characteristics POSCAP vs other type at 25℃ A:POSCAP 6.3V/47 F (3.5x2.8x1.1mm) B:Tantalum capacitor 6.3V/47μF (3.5x2.8x1.9mm)


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    V/47F 5V/47F 2TPE470M6 2TPSF270M9G 2TPLF470M4E RC-2002 TANTALUM capacitor ESR vs frequency 2TPE470M6 2TPLF470M4E sanyo tplf 6TPC47MB 2TPSF270M9G 6TPB100MA Electrolytic Capacitor 25V 470uf poscap WAVE Soldering guidelines ELECTROLYTIC PDF

    SMUN5313DW1T3G

    Abstract: SMUN5313DW1 6x transistor
    Text: MUN5313DW1, SMUN5313DW1, NSBC144EPDXV6, NSBC144EPDP6 Complementary Bias Resistor Transistors R1 = 47 kW, R2 = 47 kW http://onsemi.com NPN and PNP Transistors with Monolithic Bias Resistor Network This series of digital transistors is designed to replace a single


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    MUN5313DW1, SMUN5313DW1, NSBC144EPDXV6, NSBC144EPDP6 DTC144EP/D SMUN5313DW1T3G SMUN5313DW1 6x transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: SKCD 47 C 120 I3 Absolute Maximum Ratings Symbol Conditions Values VRRM Tj = 25 °C, IR = 0.15 mA Tj = 25 °C IF DC = 55 A VRRM = 1200 V Size: 6.86 x 6.86 mm² SKCD 47 C 120 I3 Features • low forward voltage drop combined with a low temperature dependence


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    Untitled

    Abstract: No abstract text available
    Text: MUN2213, MMUN2213L, MUN5213, DTC144EE, DTC144EM3, NSBC144EF3 Digital Transistors BRT R1 = 47 kW, R2 = 47 kW http://onsemi.com NPN Transistors with Monolithic Bias Resistor Network PIN CONNECTIONS This series of digital transistors is designed to replace a single


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    MUN2213, MMUN2213L, MUN5213, DTC144EE, DTC144EM3, NSBC144EF3 DTC144E/D PDF

    Untitled

    Abstract: No abstract text available
    Text: MUN2113, MMUN2113L, MUN5113, DTA144EE, DTA144EM3, NSBA144EF3 Digital Transistors BRT R1 = 47 kW, R2 = 47 kW http://onsemi.com PNP Transistors with Monolithic Bias Resistor Network PIN CONNECTIONS This series of digital transistors is designed to replace a single


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    MUN2113, MMUN2113L, MUN5113, DTA144EE, DTA144EM3, NSBA144EF3 DTA144E/D PDF