Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    47N60C3 INFINEON Search Results

    47N60C3 INFINEON Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    47n60c3

    Abstract: P-TO247 47N60C P-TO-247 SPW47N60C3 47n60c3 infineon 2449
    Text: SPW47N60C3 Target data sheet Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Worldwide best R DS on in TO 220 • Ultra low gate charge VDS @ Tjmax 650 V RDS(on) 0.07 Ω


    Original
    PDF SPW47N60C3 P-TO247 47N60C3 47n60c3 P-TO247 47N60C P-TO-247 SPW47N60C3 47n60c3 infineon 2449

    SPW47N60C3

    Abstract: 47n60c3
    Text: SPW47N60C3 Preliminary data Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax 650 V • Periodic avalanche rated RDS on 0.07 Ω • Extreme dv/dt rated ID 47 A • Ultra low effective capacitances


    Original
    PDF SPW47N60C3 P-TO247 Q67040-S4491 47N60C3 SPW47N60C3 47n60c3

    47n60c3

    Abstract: SPW47N60C3 SDP06S60 617 300
    Text: SPW47N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.07 Ω ID 47 A • New revolutionary high voltage technology • Worldwide best R DS(on) in TO 247 • Ultra low gate charge P-TO247 • Periodic avalanche rated • Extreme dv/dt rated


    Original
    PDF SPW47N60C3 P-TO247 Q67040-S4491 47N60C3 47n60c3 SPW47N60C3 SDP06S60 617 300

    47n60C3

    Abstract: 47N60C SPW47N60C3 SDP06S60
    Text: SPW47N60C3 Final data Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.07 Ω ID 47 A Feature • New revolutionary high voltage technology • Worldwide best R DS(on) in TO 247 • Ultra low gate charge P-TO247 • Periodic avalanche rated • Extreme dv/dt rated


    Original
    PDF SPW47N60C3 P-TO247 Q67040-S4491 47N60C3 47n60C3 47N60C SPW47N60C3 SDP06S60

    47n60C3

    Abstract: SPW47N60C3 47N60 SDP06S60
    Text: SPW47N60C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax 650 V • Periodic avalanche rated RDS on 0.07 Ω • Extreme dv/dt rated ID 47 A • Ultra low effective capacitances


    Original
    PDF SPW47N60C3 P-TO247 Q67040-S4491 47N60C3 47n60C3 SPW47N60C3 47N60 SDP06S60

    47n60c3

    Abstract: SPW47N60C3 47N60 SDP06S60 47N60C
    Text: SPW47N60C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.07 Ω ID 47 A • New revolutionary high voltage technology • Worldwide best R DS(on) in TO 247 • Ultra low gate charge P-TO247 • Periodic avalanche rated • Extreme dv/dt rated


    Original
    PDF SPW47N60C3 P-TO247 Q67040-S4491 47N60C3 47n60c3 SPW47N60C3 47N60 SDP06S60 47N60C

    47n60c3

    Abstract: 47n60 Q67040-S4491 47N60C 47n60c3 infineon
    Text: SPW47N60C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.07 Ω ID 47 A • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 247 P-TO247 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated


    Original
    PDF SPW47N60C3 P-TO247 Q67040-S4491 47N60C3 47n60c3 47n60 Q67040-S4491 47N60C 47n60c3 infineon

    47n60c3

    Abstract: SPW47N60C3 47N60 SDP06S60 tp 2116 Pulse-10
    Text: SPW47N60C3 Preliminary data Cool MOS =Power Transistor Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax 650 V •=Periodic avalanche rated RDS on 0.07 Ω • Extreme dv/dt rated ID 47 A •=Ultra low effective capacitances


    Original
    PDF SPW47N60C3 P-TO247 Q67040-S4491 47N60C3 47n60c3 SPW47N60C3 47N60 SDP06S60 tp 2116 Pulse-10

    BCM 4336

    Abstract: 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265
    Text: 01.07.2005 11:10 Uhr Seite 2 Shor t Form Catalog for Distribution 2005/06 w w w. i n f i n e o n . c o m / d i s t r i b u t i o n Published by Infineon Technologies AG Ordering No. B192-H6780-G9-X-7600 Printed in Germany LM 060550. Shor t Form Catalog Distribution 2005/06


    Original
    PDF B192-H6780-G9-X-7600 D-81669 VDSL5100i-E VDSL6100i-E BCM 4336 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265

    PEF 24628

    Abstract: PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819
    Text: 2006/2007 Published by Infineon Technologies AG Ordering No. B192-H6780-G10-X-7600 Printed in Germany PS 080648. nb Infineon Product Catalog for Distribution 2006/2007 Product Catalog for Distribution www.infineon.com/distribution Edition July 2006 Published by


    Original
    PDF B192-H6780-G10-X-7600 SP000012954 SP000013610 SP000017969 SP000014627 SP000018085 SP000018086 PEF 24628 PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819