Untitled
Abstract: No abstract text available
Text: TOSHIBA {DISCRETE/OPTO! 9097250 TOSHIBA ~5b DE J t D T T S S D 0G074flb 7 DISCRETE/OPTO o _ 7 ^ j 3 - o f r SILICON NPN EPITA X IA L PLANAR TYPE Unit in nun UHF BAND POWER AMPLIFIER APPLICATIONS. 45°'V/ 5 FEATURES : . Output Power : P0=6W(Min.) u H (f=47QMHz, VCc=12.6V, P-^IW)
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0G074flb
47QMHz,
2SC2105
470MHz
-15pF
01/iF
470MHz
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2SC2379
Abstract: No abstract text available
Text: 2SC2379 SILICON NPN EPITAXIAL PLANAR TY P E Unit in mm UHF BAND POWER AMPLIFIER APPLICATIONS. FEATURES : . Output Power : P0=6W Min. (f=470MHz, VCC=12.6V, Pi=lW) . 100% Tested for Load Mismatch Stress at All Phase Angles with 30:1 VSWR @ VCC=12.5V, P0-6.5W, f=470MHz
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2SC2379
470MHz,
470MHz
470MH
47QMHz
x15mm
2SC2379
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2sb504
Abstract: 2t306 2N5983 2SD588 2sd73 2sc497 HD6801V
Text: /T 1 4 R C“ 4 j r\ & M- -_ ~- i l^ it 4 4 ~\ 3 — 4 & 3 * 4 i3 !. 3: " & -\ vi- W- 4 3: - x 1 — v!r 'Hv j 4 n 3 fr 4 j •& $ 3t * 3 r^-. r+ *; 5+ x i •3I .<> iS I R k Q PS Q fit S r\ tiSE H-, 4 4 ~9> x-v r-i 5+ ' s, (vs •u- lit ZSZ\'1* n 3 St
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S029747
SS963&
2sb504
2t306
2N5983
2SD588
2sd73
2sc497
HD6801V
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