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Catalog Datasheet	MFG & Type	PDF	Document Tags
65NG Abstract: 58 65NG 48 65NG Text: NTD5865N N-Channel Power MOSFET 60 V, 38 A, 18 mW Features Low Gate Charge Fast Switching High Current Capability 100% Avalanche Tested These Devices are Pb−Free, Halogen Free and are RoHS Compliant MAXIMUM RATINGS TJ = 25°C unless otherwise noted Symbol	Original	PDF	NTD5865N NTD5865N/D 65NG 58 65NG 48 65NG
49 65NG Abstract: 65NG Text: NTD5865N N-Channel Power MOSFET 60 V, 43 A, 18 mW Features Low Gate Charge Fast Switching High Current Capability 100% Avalanche Tested These Devices are Pb−Free, Halogen Free and are RoHS Compliant MAXIMUM RATINGS TJ = 25°C unless otherwise noted Symbol	Original	PDF	NTD5865N NTD5865N/D 49 65NG 65NG
58 65NG mosfet Abstract: 65NG 369D NTD5865NT4G Text: NTD5865N N-Channel Power MOSFET 60 V, 38 A, 18 mW Features Low Gate Charge Fast Switching High Current Capability 100% Avalanche Tested These Devices are Pb−Free, Halogen Free and are RoHS Compliant MAXIMUM RATINGS TJ = 25°C unless otherwise noted Symbol	Original	PDF	NTD5865N NTD5865N/D 58 65NG mosfet 65NG 369D NTD5865NT4G
58 65NG Abstract: No abstract text available Text: NTD5865N N-Channel Power MOSFET 60 V, 38 A, 18 mW Features Low Gate Charge Fast Switching High Current Capability 100% Avalanche Tested These Devices are Pb−Free, Halogen Free and are RoHS Compliant MAXIMUM RATINGS TJ = 25°C unless otherwise noted Symbol	Original	PDF	NTD5865N NTD5865N/D 58 65NG
Untitled Abstract: No abstract text available Text: NTD5865N N-Channel Power MOSFET 60 V, 43 A, 18 mW Features • • • • • Low Gate Charge Fast Switching High Current Capability 100% Avalanche Tested These Devices are Pb−Free, Halogen Free and are RoHS Compliant http://onsemi.com V BR DSS RDS(on) MAX	Original	PDF	NTD5865N NTD5865N/D
65NG Abstract: 48 65NG 369D Text: NTD4865N Power MOSFET 25 V, 44 A, Single N-Channel, DPAK/IPAK Features •ăTrench Technology •ăLow RDS on to Minimize Conduction Losses •ăLow Capacitance to Minimize Driver Losses •ăOptimized Gate Charge to Minimize Switching Losses •ăThese are Pb-Free Devices	Original	PDF	NTD4865N NTD4865N/D 65NG 48 65NG 369D
65NG Abstract: 369D NTD4865NT4G Text: NTD4865N Power MOSFET 25 V, 44 A, Single N-Channel, DPAK/IPAK Features Trench Technology Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices http://onsemi.com	Original	PDF	NTD4865N NTD4865N/D 65NG 369D NTD4865NT4G
Untitled Abstract: No abstract text available Text: NTD4865N Power MOSFET 25 V, 44 A, Single N-Channel, DPAK/IPAK Features Trench Technology Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices http://onsemi.com	Original	PDF	NTD4865N NTD4865N/D
65NG Abstract: 48 65NG Text: NTD4865N Power MOSFET 25 V, 44 A, Single N-Channel, DPAK/IPAK Features •ăTrench Technology •ăLow RDS on to Minimize Conduction Losses •ăLow Capacitance to Minimize Driver Losses •ăOptimized Gate Charge to Minimize Switching Losses •ăThese are Pb-Free Devices	Original	PDF	NTD4865N NTD4865N/D 65NG 48 65NG
V68A Abstract: No abstract text available Text: NTD4965N Power MOSFET 30 V, 68 A, Single N−Channel, DPAK/IPAK Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Three Package Variations for Design Flexibility	Original	PDF	NTD4965N NTD4965N/D V68A
49 65NG Abstract: 4965ng 65NG 4965n NTD4965N-35G NTD4965NT4G mosfet 126 NTD4965N 369D-01 369D Text: NTD4965N Power MOSFET 30 V, 68 A, Single N−Channel, DPAK/IPAK Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Three Package Variations for Design Flexibility	Original	PDF	NTD4965N NTD4965N/D 49 65NG 4965ng 65NG 4965n NTD4965N-35G NTD4965NT4G mosfet 126 NTD4965N 369D-01 369D
65NG Abstract: 49 65NG 4965ng NTD4965NT4G Text: NTD4965N Power MOSFET 30 V, 68 A, Single N−Channel, DPAK/IPAK Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Three Package Variations for Design Flexibility	Original	PDF	NTD4965N NTD4965N/D 65NG 49 65NG 4965ng NTD4965NT4G
Untitled Abstract: No abstract text available Text: NTD4965N Power MOSFET 30 V, 68 A, Single N−Channel, DPAK/IPAK Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Three Package Variations for Design Flexibility	Original	PDF	NTD4965N NTD4965N/D
65NG Abstract: 49 65NG 4965ng NTD4965N Text: NTD4965N Power MOSFET 30 V, 68 A, Single N−Channel, DPAK/IPAK Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Three Package Variations for Design Flexibility	Original	PDF	NTD4965N NTD4965N/D 65NG 49 65NG 4965ng