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    4800MA Search Results

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    Part ECAD Model Manufacturer Description Download Buy
    DFE32CAH1R5MR0L Murata Manufacturing Co Ltd Fixed IND 1.5uH 4800mA POWRTRN Visit Murata Manufacturing Co Ltd
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    4800MA Price and Stock

    Eaton Bussmann BK-S504-800MA

    FUSE GLASS 800MA 250VAC 5X20MM
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    DigiKey BK-S504-800MA Bulk 100
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    Citizen Finedevice Co Ltd CM309S4.800MABJT

    CRYSTAL 4.8000MHZ 18PF SMD
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    DigiKey CM309S4.800MABJT Reel 1,000
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    CM309S4.800MABJT Cut Tape 1
    • 1 $0.97
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    CM309S4.800MABJT Digi-Reel 1
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    Seiko Epson Corporation FA-20H-48.00M-A0NNNNG40RE0

    FA-20H 48.00M-A0NNNNG40RE0: MHZ
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    DigiKey FA-20H-48.00M-A0NNNNG40RE0 Reel 1,000
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    Seiko Epson Corporation TSX-3225-48.00M-A0AAFFG30RGB

    CRYSTAL 48.0000MHZ 10PF SMD
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    DigiKey TSX-3225-48.00M-A0AAFFG30RGB Bulk 100
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    Energizer Battery Company NH12BP-4 800MAH

    Battery, Nickel Metal Hydride-Nimh, aaa,1.2V,700Mah; Battery Technology:Nickel Metal Hydride; Battery Capacity:800Mah; Battery Voltage:1.2V; Battery Size Code:Aaa; Battery Terminals:Raised Positive And Flatnegative; Weight:12G |Energizer NH12BP-4 800MAH
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    Newark NH12BP-4 800MAH Pack 6
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    4800MA Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    asus

    Abstract: FA8142 PT8300 RS690M ATI M76-M m64m H5401 PT8700 M64-M ATXP1 8632e
    Text: 5 4 3 2 1 */E*/I &PSGO MEKVEQ VGA VCORE D AMD CPU S1g1 CPU VCORE PAGE 85 PAGE 80 Clock gen. DDR2-800MHz PAGE 29 Dual Channel DDR2 D SO-DIMM X 2 Power On Sequence Up to 4GB DDRII PAGE 7,8,9 PAGE 32 PAGE 3,4,5 Li-Ion 6 cells:4800mAH,3S2P,53.28W (3S2P;4.2*3=12.6V;2400mAH*2=4800mAH;


    Original     		PDF DDR2-800MHz 4800mAH 2400mAH 4800mAH; 7200mAH 7200mAH; 638pin TL-50/52/56/60) asus FA8142 PT8300 RS690M ATI M76-M m64m H5401 PT8700 M64-M ATXP1 8632e

    BRS105

    Abstract: No abstract text available
    Text: Data Sheet Model No.: 160CK Type : Rechargeable Nickel Cadmium Cylindrical Cell Nominal Dimension with Sleeve : ∅ = 26.2mm H = 50.0mm : Recommended discharge current 320 to 4800mA Voltage (V) 1.6 Nominal Voltage : 1.2V 1.4 Nominal Capacity : Minimim : 1600mAh


    Original     		PDF 160CK 4800mA 1600mAh 1680mAh 320mA 160mA 800mA 10-20mV 800mA BRS105

    Untitled

    Abstract: No abstract text available
    Text: Spec Sheet INDUCTORS High Reliability Application SMD Power Inductors for Industrial / Automotive Comfort and Safeｔｙ Applications (NR series H type / V type / S type) NRS8030T2R2NJGJV Features Item Summary 2.2 H(±30%), 4900mA, 4800mA Lifecycle Stage


    Original     		PDF NRS8030T2R2NJGJV 4900mA, 4800mA AEC-Q200 1000pcs 100kHz 4900mA

    Untitled

    Abstract: No abstract text available
    Text: Spec Sheet INDUCTORS High Reliability Application SMD Power Inductors for Industrial / Automotive Comfort and Safeｔｙ Applications (NR series H type / V type / S type) NRS8030T2R2NJGJV Features Item Summary 2.2 H(±30%), 4900mA, 4800mA Lifecycle Stage


    Original     		PDF NRS8030T2R2NJGJV 4900mA, 4800mA AEC-Q200 1000pcs 100kHz 4900mA

    Untitled

    Abstract: No abstract text available
    Text: Spec Sheet INDUCTORS SMD Power Inductors NR series S type NRS8030T2R2NJGJ Features Item Summary 2.2 H(±30%), 4900mA, 4800mA Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 1000pcs Products characteristics table External Dimensions


    Original     		PDF NRS8030T2R2NJGJ 4900mA, 4800mA 1000pcs 100kHz 4900mA 60MHz

    GP160AAHC

    Abstract: No abstract text available
    Text: Data Sheet Model No.: GP160AAHC Fast Charge Charge control required Voltage (V) 1.6 Type : Rechargeable Nickel Metal Hydride Cylindrical Cell Nominal Dimension (with Sleeve) : Applications : Recommended discharge current 160 to 4800mA 1.4 Nominal Voltage


    Original     		PDF GP160AAHC 4800mA 1550mAh 1600mAh 320mA 160mA 800mA 1600mA GP160AAHC

    NRS8030T

    Abstract: No abstract text available
    Text: Spec Sheet INDUCTORS SMD Power Inductors NR series S type NRS8030T2R2NJGJ Features Item Summary 2.2 H(±30%), 4900mA, 4800mA Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 1000pcs Products characteristics table External Dimensions


    Original     		PDF NRS8030T2R2NJGJ 4900mA, 4800mA 1000pcs 100kHz 4900mA 60MHz NRS8030T

    ASUS

    Abstract: M64-M ATI M64-M H5401 U4100 f3K inverter U2900 TPA6017 RS690M f7kr
    Text: 5 4 3 2 1 */ &PSGO MEKVEQ VGA VCORE D AMD CPU S1g1 CPU VCORE PAGE 85 PAGE 80 Clock gen. PAGE 29 Dual Channel DDR2 DDR2-800MHz D SO-DIMM X 2 Power On Sequence Up to 4GB DDRII PAGE 7,8,9 PAGE 32 PAGE 3,4,5 Li-Ion 6 cells:4800mAH,3S2P,53.28W (3S2P;4.2*3=12.6V;2400mAH*2=4800mAH;


    Original     		PDF DDR2-800MHz 4800mAH 2400mAH 4800mAH; 7200mAH 7200mAH; 638pin TL-50/52/56/60) 1600MT/s ASUS M64-M ATI M64-M H5401 U4100 f3K inverter U2900 TPA6017 RS690M f7kr

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet Model No.: GP160AAHC Fast Charge Charge control required Voltage (V) 1.6 Type : Rechargeable Nickel Metal Hydride Cylindrical Cell Nominal Dimension (with Sleeve) : Applications : Recommended discharge current 160 to 4800mA 1.4 Nominal Voltage


    Original     		PDF GP160AAHC 4800mA 1550mAh 1600mAh 320mA 160mA 800mA 1600mA

    GP160AAHC

    Abstract: CQS3361 GP rechargeable battery GP BATTERY
    Text: Data Sheet Model No.: GP160AAHC Fast Charge Charge control required Voltage (V) 1.6 Type : Rechargeable Nickel Metal Hydride Cylindrical Cell Nominal Dimension (with Sleeve) : Applications : Recommended discharge current 160 to 4800mA 1.4 Nominal Voltage


    Original     		PDF GP160AAHC 4800mA 1550mAh 1600mAh 320mA 160mA 800mA 1600mA 20min GP160AAHC CQS3361 GP rechargeable battery GP BATTERY

    XP1073-BD

    Abstract: xp1073 DM6030HK XP107
    Text: 34.0-37.0 GHz GaAs MMIC Power Amplifier P1073-BD February 2010 - Rev 16-Feb-10 Features Ka-Band 6W Power Amplifier 22.0 dB Small Signal Gain +37.0 dBm Pulsed Saturated Output Power 24% Power Added Efficiency PAE % 100% On-Wafer RF, DC and Output Power Testing


    Original     		PDF P1073-BD 16-Feb-10 MIL-STD-883 XP1073-BD XP1073-BD xp1073 DM6030HK XP107

    Untitled

    Abstract: No abstract text available
    Text: LUXEON MZ Best combination of brightness, uniformity and luminance enabling precision light control Introduction LUXEON MZ emitters are illumination grade LEDs designed to enable indoor, outdoor and industrial applications with all of the features of LUXEON M including the identical solder footprint, but allowing for tighter beam control


    Original     		PDF DS136

    Untitled

    Abstract: No abstract text available
    Text: Inductors Coils for Power Lines Data Sheet 1 LQH55DN_03 Series 2220/5750 (inch/mm) Wound Thickness General (No Shield) 5.0 mm max. Reflow RoHS OK c Dimensions c Packaging 5.0±0.3 4.7±0.3 5.0±0.3 Code Packaging Minimum Quantity L ø180mm Embossed Taping


    Original     		PDF LQH55DN 180mm 330mm LQH55DNR12M03p 6000mA 450MHz LQH55DNR27M03p 5300mA 300MHz LQH55DNR47M03p

    FLM3742-18F

    Abstract: 4532 fet
    Text: FLM3742-18F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 43.0dBm Typ. High Gain: G1dB = 10.5dB (Typ.) High PAE: ηadd = 37% (Typ.) Low IM3 = -46dBc@Po = 32.0dBm Broad Band: 3.7 ~ 4.2GHz Impedance Matched Zin/Zout = 50Ω


    Original     		PDF FLM3742-18F -46dBc FLM3742-18F 4532 fet

    FLM5359-18F

    Abstract: No abstract text available
    Text: FLM5359-18F C-Band Internally Matched FET FEATURES • • • • • • High Output Power: P1dB = 43.0dBm Typ. High Gain: G1dB = 8.5dB (Typ.) High PAE: ηadd = 35% (Typ.) Low IM3 = -46dBc@Po = 32.0dBm Broad Band: 5.3 ~ 5.9GHz Impedance Matched Zin/Zout = 50Ω


    Original     		PDF FLM5359-18F -46dBc FLM5359-18F Pow4888

    aeg 3589

    Abstract: 1 928 404 072
    Text: FLM4450-18F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 43.0dBm Typ. High Gain: G1dB = 9.5dB (Typ.) High PAE: hadd = 36% (Typ.) Low IM3 = -46dBc@Po = 32.0dBm Broad Band: 4.4 ~ 5.0 GHz Impedance Matched Zin/Zout = 50W


    Original     		PDF FLM4450-18F -46dBc FLM4450-18F FCSI0499M200 aeg 3589 1 928 404 072

    P240C

    Abstract: P-240C 0033C 35C6
    Text: INDIVIDUAL DATA SHEETS Typical Charge Characteristics P-240C C size KR26/50 Type: N Dimensions (with tube) (mm) 1.8 Voltage (V) 1.7 +0 25.8 - 1.0 (+) 1.6 0˚C 1.5 20˚C 1.4 1.3 45˚C 1.2 1.1 25.8 +- 01.0 Charge : 240mA(0.1C)x 15hrs. 1.0 0.9 (+ ) 3 6 9 12


    Original     		PDF P-240C KR26/50) 240mA 15hrs. 800mA 120mA 30hrs. 45hrs. 7200mA 4800mA P240C 0033C 35C6

    PAGE12

    Abstract: PAGE13 QKR032-D MLB-451616-0060P-N1 6090R
    Text: MAG.LAYERS Scientific- Technics Co., Ltd. MLB-451616-0060P-N1 Reliability Report TEL：886-3-5972488 Fax ：886-3-5972477 http：//www.maglayers.com.tw MAG. LAYERS Scientific-Technics Co., Ltd. TEL：886-3-5972488 Fax：886-3-5972477 http：//www.maglayers.com.tw


    Original     		PDF MLB-451616-0060P-N1 TEL886-3-5972488 Fax886-3-5972477 PAGE12 PAGE13 QKR032-D MLB-451616-0060P-N1 6090R

    4800MAH

    Abstract: No abstract text available
    Text: DLG BATTERY CO. LTD Data Sheet Model No: Document Number DRS-187-S rev: 0 Type: Rechargeable Nickel Metal Hydride Cylindrical Cell Nominal Dimension : <5=14.5mm with sleeve H=50.5mm Applications: Recommended discharge current 235 to 7050 mA Nominal Voltage:


    OCR Scan     		PDF AA250J DRS-187-S 2350mAh 2500mAh 250mA 1200mA IEC61951-2 25Cx2hrs20mins 4800MAH

    Untitled

    Abstract: No abstract text available
    Text: Enhanced H I V f e m o iy S y s t e m s In c . DM4M32SJ6 M ultibank EDO 4Mb x 32 Enhanced DRAM SIMM Product Specification Features A rchitecture • Four Integrated 2,048 x 32 SRAM Cache Row Registers Allows 12ns Random Reads Within 4 Active Pages Multibank Cache


    OCR Scan     		PDF DM4M32SJ6 454-Gbyte/sec DM4M32SJ

    Untitled

    Abstract: No abstract text available
    Text: F, . FLM5964-18DA r UJ11 jU Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P ^ b = 42.5dBm Typ. High Gain: G ^ b = 8.5dB (Typ.) High PAE: r!add = 31% (Typ.) Low IM3 = -45dBc@Po = 31.5dBm Broad Band: 5.9 ~ 6.4GHz


    OCR Scan     		PDF FLM5964-18DA -45dBc 5964-18D Drain-40

    FLM5964-18DA

    Abstract: 5964-18DA 5964-18D
    Text: FLM5964-18DA F| if m - i • I Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P-idg = 42.5dBm Typ. High Gain: G -j^B = 8.5dB (Typ.) High PAE: r iadd = 31% (Typ.) Low IM 3 = -45dBc@Po = 31.5dBm Broad Band: 5.9 ~ 6.4GHz


    OCR Scan     		PDF FLM5964-18DA -45dBc 5964-18D FLM5964-18DA 5964-18DA

    U/25/20/TN26/15/850/FLM6472-18DA

    Abstract: No abstract text available
    Text: FLM6472-18DA F| I Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P-idg = 42.5dBm Typ. High Gain: G-j^B = 7.0dB (Typ.) High PAE: riadd = 30% (Typ.) Low IM3 = -45dBc@Po = 31.5dBm Broad Band: 6.4 ~ 7.2GHz Impedance Matched Zin/Zout = 50Q


    OCR Scan     		PDF FLM6472-18DA -45dBc FLM6472-18DA VD-164 U/25/20/TN26/15/850/FLM6472-18DA

    FLM7177-18DA

    Abstract: T-34038
    Text: FLM7177-18DA Fuffrsu Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P-idg = 42.5dBm Typ. High Gain: G-j^B = 7.5dB (Typ.) High PAE: r iadd = 30% (Typ.) Low IM3 = -45dBc@Po = 3 1 .5dBm Broad Band: 7.1 ~ 7.7GHz Impedance Matched Zin/Zout = 50Q


    OCR Scan     		PDF FLM7177-18DA -45dBc FLM7177-18DA Symbo474 T-34038