2SK2171
Abstract: No abstract text available
Text: Ordering number:ENN4871 N-Channel Junction Silicon FET 2SK2171 High-Frequency, Low-Frequency Amplifier Analog Switch Applications Features Package Dimensions • Adoption of FBET process. · Large | yfs |. · Small Ciss. · High PD allowable power dissipation.
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ENN4871
2SK2171
2SK2171]
25max
2SK2171
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2SK2171
Abstract: No abstract text available
Text: Ordering number:ENN4871 N-Channel Junction Silicon FET 2SK2171 High-Frequency, Low-Frequency Amplifier Analog Switch Applications Features Package Dimensions • Adoption of FBET process. · Large | yfs |. · Small Ciss. · High PD allowable power dissipation.
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ENN4871
2SK2171
2SK2171]
25max
2SK2171
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Untitled
Abstract: No abstract text available
Text: 友順科技股份有限公司 UNISONIC TECHNOLOGIES CO., LTD. 產 品 變 更 通 知 PRODUCT CHANGE NOTIFICATION PCN No. TITLE IC-PPCN-150103 Issue Date DFN封裝印字規則變更 Marking Rule Change of DFN Jan-27-2015 Page 1 of 2 變更主旨(TITLE):
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IC-PPCN-150103
Jan-27-2015
QR-0205-01
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Untitled
Abstract: No abstract text available
Text: TSM058N06PQ56 60V N-Channel MOSFET PDFN56 Key Parameter Performance Pin Definition: 1. Source 8. Drain 2. Source 7. Drain 3. Source 6. Drain 4. Gate 5. Drain Parameter Value Unit VDS 60 V RDS on (max) 5.8 mΩ Qg 118 nC Features Block Diagram ● Low On-Resistance
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TSM058N06PQ56
PDFN56
TSM058N06PQ56
900ppm
1500ppm
1000ppm
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L4871
Abstract: SNAS002F 4871 national 4871 NGN0008A VSSOP MDA g71 marking LM4871S
Text: LM4871 www.ti.com SNAS002F – FEBRUARY 2000 – REVISED MAY 2013 LM4871 3W Audio Power Amplifier with Shutdown Mode Check for Samples: LM4871 FEATURES DESCRIPTION • The LM4871 is a mono bridged audio power amplifier capable of delivering 3W of continuous average
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LM4871
SNAS002F
LM4861
LM4871
L4871
SNAS002F
4871 national
4871
NGN0008A
VSSOP MDA
g71 marking
LM4871S
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LM4871
Abstract: L4871 4871 DGK0008A NGN0008A
Text: LM4871 www.ti.com SNAS002E – MAY 2004 – REVISED OCTOBER 2004 LM4871 3W Audio Power Amplifier with Shutdown Mode Check for Samples: LM4871 FEATURES DESCRIPTION • The LM4871 is a mono bridged audio power amplifier capable of delivering 3W of continuous average
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LM4871
SNAS002E
LM4861
LM4871
L4871
4871
DGK0008A
NGN0008A
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Untitled
Abstract: No abstract text available
Text: LM4871 www.ti.com SNAS002F – FEBRUARY 2000 – REVISED MAY 2013 LM4871 3W Audio Power Amplifier with Shutdown Mode Check for Samples: LM4871 FEATURES DESCRIPTION • The LM4871 is a mono bridged audio power amplifier capable of delivering 3W of continuous average
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LM4871
SNAS002F
LM4871
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Untitled
Abstract: No abstract text available
Text: LM4871 www.ti.com SNAS002F – FEBRUARY 2000 – REVISED MAY 2013 LM4871 3W Audio Power Amplifier with Shutdown Mode Check for Samples: LM4871 FEATURES DESCRIPTION • The LM4871 is a mono bridged audio power amplifier capable of delivering 3W of continuous average
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LM4871
SNAS002F
LM4861
LM4871
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LM4871S
Abstract: power amplifier circuit diagram with ic lm4871 pc 5v 3W AUDIO AMPLIFIER CIRCUIT DIAGRAM L4871 30402 regulator power amplifier circuit diagram with ic lm4871 150Hz Low pass filter LM4871 4871
Text: LM4871 3W Audio Power Amplifier with Shutdown Mode General Description Key Specifications The LM4871 is a mono bridged audio power amplifier capable of delivering 3W of continuous average power into a 3Ω load with less than 10% THD when powered by a 5V power supply Note 1 . To conserve power in portable applications, the LM4871’s micropower shutdown mode (IQ =
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LM4871
LM4861
LM4871LD:
5-Aug-2002]
LM4871S
power amplifier circuit diagram with ic lm4871 pc
5v 3W AUDIO AMPLIFIER CIRCUIT DIAGRAM
L4871
30402 regulator
power amplifier circuit diagram with ic lm4871
150Hz Low pass filter
4871
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Untitled
Abstract: No abstract text available
Text: RTOP Vishay Sfernice Power Resistor for Mounting onto a Heatsink Thick Film Technology FEATURES • 1 % tolerance available • High power rating = 200 W • Wide ohmic value range = 0.046 Ωto 1 MΩ • Non inductive • Easy mounting • Low thermal radiation of the case
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18-Jul-08
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SOT227B package
Abstract: SI-340 48R7 BO10 R010 R680 Dow Corning SI 340
Text: RTOP Vishay Sfernice Power Resistor for Mounting onto a Heatsink Thick Film Technology FEATURES • 1 % tolerance available • High power rating = 200 W • Wide ohmic value range = 0.046 Ω to 1 MΩ • Non inductive • Easy mounting • Low thermal radiation of the case
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OT-227
2002/95/EC
OT-227B
18-Jul-08
SOT227B package
SI-340
48R7
BO10
R010
R680
Dow Corning SI 340
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48R7
Abstract: BO10 R010 R680 4871 marking
Text: RTOP Vishay Sfernice Power Resistor for Mounting onto a Heatsink Thick Film Technology FEATURES • 1 % tolerance available • High power rating = 200 W • Wide ohmic value range = 0.046 Ωto 1 MΩ • Non inductive • Easy mounting • Low thermal radiation of the case
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18-Jul-08
48R7
BO10
R010
R680
4871 marking
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RTOP
Abstract: No abstract text available
Text: RTOP Vishay Sfernice Power Resistor for Mounting onto a Heatsink Thick Film Technology FEATURES • 1 % tolerance available • High power rating = 200 W • Wide ohmic value range = 0.046 to 1 MΩ • Non inductive • Easy mounting • Low thermal radiation of the case
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18-Jul-08
RTOP
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RTOP
Abstract: No abstract text available
Text: RTOP Vishay Sfernice Power Resistor for Mounting onto a Heatsink Thick Film Technology FEATURES • 1 % tolerance available • High power rating = 200 W RoHS COMPLIANT • Wide ohmic value range = 0.046 to 1 MΩ • Non inductive • Easy mounting • Low thermal radiation of the case
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18-Jul-08
RTOP
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Vishay resistor RH
Abstract: shunt R010
Text: RTOP Vishay Sfernice Power Resistor for Mounting onto a Heatsink Thick Film Technology FEATURES • 1 % tolerance available • High power rating = 200 W • Wide ohmic value range = 0.046 Ω to 1 MΩ • Non inductive • Easy mounting • Low thermal radiation of the case
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OT-227
2002/95/EC
OT-227B
11-Mar-11
Vishay resistor RH
shunt R010
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Untitled
Abstract: No abstract text available
Text: RTOP www.vishay.com Vishay Sfernice Power Resistors for Mounting onto a Heatsink Thick Film Technology FEATURES • 1 % tolerance available • High power rating = 200 W • Wide ohmic value range = 0.046 to 1 M • Non inductive • Easy mounting • Low thermal radiation of the case
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OT-227
2002/95/EC
OT-227B
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: RTOP www.vishay.com Vishay Sfernice Power Resistors for Mounting onto a Heatsink Thick Film Technology FEATURES • 1 % tolerance available • High power rating = 200 W • Wide ohmic value range = 0.046 to 1 M • Non inductive • Easy mounting • Low thermal radiation of the case
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OT-227
2002/95/EC
OT-227B
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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SOT227B package
Abstract: 4871 marking sot 227b
Text: RTOP www.vishay.com Vishay Sfernice Power Resistors for Mounting onto a Heatsink Thick Film Technology FEATURES • 1 % tolerance available • High power rating = 200 W • Wide ohmic value range = 0.046 to 1 M • Non inductive • Easy mounting • Low thermal radiation of the case
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OT-227
2002/95/EC
OT-227B
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
SOT227B package
4871 marking
sot 227b
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Untitled
Abstract: No abstract text available
Text: RTOP www.vishay.com Vishay Sfernice Power Resistors for Mounting onto a Heatsink Thick Film Technology FEATURES • 1 % tolerance available • High power rating = 200 W • Wide ohmic value range = 0.046 to 1 M • Non inductive • Easy mounting • Low thermal radiation of the case
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OT-227
OT-227B
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: RTOP www.vishay.com Vishay Sfernice Power Resistors for Mounting onto a Heatsink Thick Film Technology FEATURES • 1 % tolerance available • High power rating = 200 W • Wide ohmic value range = 0.046 to 1 M • Non inductive • Easy mounting • Low thermal radiation of the case
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OT-227
OT-227B
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: REV. S ta tu s REVISION 0 5 /0 3 /0 0 - LOW PROFILE THREE FLANGE BOBBIN 12VA TRANSFORMER APPROVED TO UL506 cr A. Electrical S pecifications @ 25° C TS Ld m 1. Input Voltage and Frequency; 1 1 5 / 2 3 0 V 5 0 / 6 0 H z 2. O utput Voltage; 35V±5% @ 0 .1 5A
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UL506
100MQ
500VDC,
PFT12â
E79781
PFT12-35
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sfh 309 fr
Abstract: No abstract text available
Text: SIEM EN S GaAIAs-IR-Lumineszenzdiode 880 nm GaAIAs Infrared Emitter (880 nm) SFH 487 Area not flat* M f 0 .4 oo^ öö V 4.1 I—-3 .9 § .? !_ 4.0 3.6 -ífeÆ sa o -r Mw , 3.5 I Chip positio n X m 0 .4 — 29— 27 C athode=SFH 409 Anode =SFH487 A p p ro x. w e ig h t 0 .3 g
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SFH487
950nmK
023Sb05
sfh 309 fr
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Untitled
Abstract: No abstract text available
Text: 6 7 T H IS D R A W IN G IS U N P U B L IS H E D . R ELEASED A LL C O P Y R IG H T - B Y TYCO E LE C TR O N IC S FO R 5 4 2 3 P U B L IC A T IO N R IG H T S LOC RESERVED. 00 AD C O R P O R A TIO N . REVISIONS D IS T CTION 12 X 4.0 = E4 F G 48.0 A C T IO N -P IN AREA
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02FEB2010
10SEP10
13DEC11
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Untitled
Abstract: No abstract text available
Text: 6 7 T H IS D R A W IN G IS U N P U B L IS H E D . R ELEASED A LL C O P Y R IG H T - B Y TYCO E LE C TR O N IC S FO R 4 5 2 3 P U B L IC A T IO N R IG H T S LOC RESERVED. D IS T 00 AD C O R P O R A TIO N . R E V IS IO N S LTR E2 CTION 12 X 4.0 = DATE DWN APVD
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