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    48DBM HIGH POWER FET 2.4GHZ Search Results

    48DBM HIGH POWER FET 2.4GHZ Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TLP5754H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-speed / High-Topr, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5751H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-speed / High-Topr, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5752H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-speed / High-Topr, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation

    48DBM HIGH POWER FET 2.4GHZ Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    P0110009P

    Abstract: gaas fet marking a ISO-14001 KP029J P0120009P RR0816 48dBm High power fet 2.4ghz
    Text: P0120009P Technical Note 2W GaAs Power FET Pb-Free Type ♦Features SUMITOMO ELECTRIC 4 ♦Functional Diagram • Up to 2.7 GHz frequency band · Beyond +31 dBm output power · Up to +48dBm Output IP3 · High Drain Efficiency · 11dB Gain at 2.1GHz · SOT-89 SMT Package


    Original     		PDF P0120009P 48dBm OT-89 17GHz KP029J P0120009P P0110009P gaas fet marking a ISO-14001 KP029J RR0816 48dBm High power fet 2.4ghz

    P0110009P

    Abstract: Susumu RL series part Marking KP029J P0120009P RR0816 marking c7 sot-89
    Text: P0120009P Technical Note 2W GaAs Power FET Pb-Free Type ♦Features ♦Functional Diagram • Up to 2.7 GHz frequency band · Beyond +31 dBm output power · Up to +48dBm Output IP3 · High Drain Efficiency · 11dB Gain at 2.1GHz · SOT-89 SMT Package · Low Noise Figure


    Original     		PDF P0120009P 48dBm OT-89 P0120009P P0110009P Susumu RL series part Marking KP029J RR0816 marking c7 sot-89

    PIC16F72 inverter ups

    Abstract: UPS inverter PIC16F72 PIC16F676 inverter hex code 16F877 with sd-card and lcd project circuit diagram wireless spy camera NH82801GB xmega-a4 online ups service manual back-ups ES 500 ARM LPC2148 INTERFACING WITH RFID circuit diagram realtek rtd 1186
    Text: the solutions are out there you just haven’t registered yet. RoadTest the newest products in the market! View the latest news, design support and hot new technologies for a range of applications Join the RoadTest group and be in with a chance to trial exclusive new products for free. Plus, read


    Original     		PDF element-14 element14. element14, PIC16F72 inverter ups UPS inverter PIC16F72 PIC16F676 inverter hex code 16F877 with sd-card and lcd project circuit diagram wireless spy camera NH82801GB xmega-a4 online ups service manual back-ups ES 500 ARM LPC2148 INTERFACING WITH RFID circuit diagram realtek rtd 1186

    qualcomm msm 8660

    Abstract: ecu repair proton rx 4000 watts power amplifier circuit diagram preamplifier proton 1100 MOBILE jammer GSM 1800 MHZ circuit diagram Qualcomm 8200 proton rx 3000 RF2713 433MHz saw Based Transmitter Schematic and PCB La RF2517
    Text:                 1      2        3         4       5    6      7 ! " 8      #  9 !   


    Original     		PDF RF2043 RF2044 RF2045 RF2046 RF2047 RF2048 RF2103P org/jedec/download/std020 qualcomm msm 8660 ecu repair proton rx 4000 watts power amplifier circuit diagram preamplifier proton 1100 MOBILE jammer GSM 1800 MHZ circuit diagram Qualcomm 8200 proton rx 3000 RF2713 433MHz saw Based Transmitter Schematic and PCB La RF2517

    11293

    Abstract: No abstract text available
    Text: HWF1688RA HSXAWAVS High Power GaAs FET September 1998 Rev.B Features • High Output Power PidB=36.5dBm typ. @2.4GHz • High Gain G l= OUTLINE DRAWING 12.5dB(typ.)@2.4GHz 1.625(0.065) • High Efficiency T|add =40%(typ.)@2.4GHz • High Linearity IP3=48dBm(typ.)@2.4GHz


    OCR Scan     		PDF HWF1688RA 48dBm F1688R Cer75 11293

    Untitled

    Abstract: No abstract text available
    Text: HWF1682CM HSXAWAVE High Power GaAs FET August 1998 Rev. A Features • High O u tp u t Pow er O U TLIN E D R A W IN G Pi<ffi=37dBm typ. @2.4GHz • High G ain 17.50 Gl= 12.5dB(typ.)@2.4GHz • High Efficiency • High L inearity Tjadd =40%(typ.)@2.4GHz IP3=48dBm(typ.)@2.4GHz


    OCR Scan     		PDF 37dBm HWF1682CM 48dBm F1682C

    pt 2358

    Abstract: 159330 17089
    Text: HWF1681NC HEXAWAVE High Power GaAs FET September 1998 Features • H igh O u tp ut Pow er • H igh G ain • H igh Efficiency • H igh L inearity • Class A o r Class AB O peration Outline Drawing PidB=34.5dBm typ. @2.4GHz Gl= 12dB(typ.)@2.4GHz r|a d d


    OCR Scan     		PDF HWF1681NC 48dBm HWF1681NC pt 2358 159330 17089

    hwf1682ra

    Abstract: No abstract text available
    Text: HWF16S2RA HEXAWAVE High Power GaAs FET September 1998 Rev.B Features • H ig h O u tp u t P o w e r O U T L I N E D R A W IN G P id B = 3 7 d B m ty p . @ 2 .4 G H z • H ig h G a in • H ig h E fficien cy • H ig h L in e a r ity G l=1 1.5dB(typ.)@2.4GHz


    OCR Scan     		PDF HWF16S2RA 48dBm F1682R hwf1682ra

    gl 1117 B

    Abstract: gl 1117 ax gs 1117 ax QM 1117 sn 0716 173300 TA 8644
    Text: HWF1681RA HSXAWAVS High Power GaAs FET Rev.B S eptem bet998 Features • H ig h O u tp u t P ow er PidB=34.5dBm typ. @ 2.4G H z • H ig h G ain • H ig h E fficiency O U T L IN E D R A W IN G Gl= 15dB(typ.)@2.4GHz 1.625(0.065) Tjadd =43%(typ.)@2.4GHz •


    OCR Scan     		PDF bet998 HWF1681RA 48dBm F1681R gl 1117 B gl 1117 ax gs 1117 ax QM 1117 sn 0716 173300 TA 8644