486 NA 100
Abstract: No abstract text available
Text: Advanced Technical Information HiPerFETTM Power MOSFETs Single Die MOSFET IXFN 48N55 VDSS = ID25 = RDS on = 550 V 48 A 110 mW D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr trr £ 250 ns G S S Symbol Test Conditions Maximum Ratings VDSS
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48N55
OT-227
E153432
486 NA 100
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Untitled
Abstract: No abstract text available
Text: HiPerFETTM Power MOSFETs VDSS = 550 V ID25 = 48 A RDS on = 110 mW IXFK 48N55 IXFX 48N55 Single MOSFET Die trr £ 250 ns Avalanche Rated Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW
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O-264
48N55
48N55
247TM
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PDF
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48n55
Abstract: No abstract text available
Text: HiPerFETTM Power MOSFETs IXFK 48N55 IXFX 48N55 Single MOSFET Die VDSS = 550 V ID25 = 48 A RDS on = 110 mW trr £ 250 ns Avalanche Rated Preliminary data Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW
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Original
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48N55
247TM
O-264
48n55
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PDF
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BTA 16 MOSFET
Abstract: No abstract text available
Text: Advanced Technical Information IXFN 48N55 HiPerFETTM Power MOSFETs Single Die MOSFET VDSS ID25 RDS on D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 550 V VDGR TJ = 25°C to 150°C; RGS = 1 MW
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Original
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48N55
BTA 16 MOSFET
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PDF
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Untitled
Abstract: No abstract text available
Text: Advanced Technical Information HiPerFETTM Power MOSFETs Single Die MOSFET IXFN 48N55 VDSS = ID25 = RDS on = 550 V 48 A 110 mW D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr trr £ 250 ns G S S Symbol Test Conditions Maximum Ratings VDSS
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Original
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48N55
OT-227
E153432
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PDF
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Untitled
Abstract: No abstract text available
Text: Advanced Technical Information HiPerFETTM Power MOSFETs Single Die MOSFET IXFN 48N55 VDSS = ID25 = RDS on = 550 V 48 A 110 mW D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr trr £ 250 ns G S S Symbol Test Conditions Maximum Ratings VDSS
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Original
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48N55
OT-227
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PDF
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Untitled
Abstract: No abstract text available
Text: HiPerFETTM Power MOSFETs IXFK 48N55 IXFX 48N55 Single MOSFET Die VDSS = 550 V ID25 = 48 A RDS on = 110 mW trr £ 250 ns Avalanche Rated Preliminary data Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW
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Original
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O-264
48N55
48N55
247TM
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C1162
Abstract: C1280 26n60 60N25 C1328 80N06 120N20 C1146 C1104 C1158
Text: HiPerFETTM F-Series Contents VDSS max V 60 70 ID cont TC = 25 °C A 76 RDS(on) TC = 25 °C W 0.011 0.012 80 0.009 110 0.006 180 0.006 200 0.006 76 0.011 0.012 105 110 0.007 0.006 180 0.007 0.006 0.006 TO-247 (IXFH) PLUS247 (IXFX) TO-268 (IXFT) TO-264 (IXFK)
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O-247
PLUS247
ISOPLUS247TM
O-204
O-268
O-264
76N06-11
76N06-12
80N06
180N06
C1162
C1280
26n60
60N25
C1328
120N20
C1146
C1104
C1158
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C1146
Abstract: C1162 C1278 C1106 C1156 ixfh 60N60 C1142 c1238 C1104 ixfn 26n60
Text: HiPerFETTM F-Series Contents VDSS max V 60 70 ID cont TC = 25 °C A 76 RDS(on) TC = 25 °C W 0.011 0.012 80 0.009 110 0.006 180 0.006 200 0.006 76 0.011 0.012 105 110 0.007 0.006 180 0.007 0.006 0.006 TO-247 (IXFH) PLUS247 (IXFX) TO-268 (IXFT) TO-264 (IXFK)
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Original
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O-247
PLUS247
ISOPLUS247TM
O-204
O-268
O-264
76N06-11
76N06-12
80N06
180N06
C1146
C1162
C1278
C1106
C1156
ixfh 60N60
C1142
c1238
C1104
ixfn 26n60
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