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Text: P D - 9.1270F International l R Rectifier IRF7509 PRELIMINARY HEXFET3 Power MOSFET • • • • • • • Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Very Small SOIC Package Low Profile <1.1 mm Available in Tape & Reel
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1270F
IRF7509
7355B
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Text: International Rectifier HEXFET Power MOSFET • • • • • • 4A 5545E DOlMbOA 3 0 2 H I N R PD-9.615A IRCZ24 INTERNATIO NAL R E C T IF IE R Dynamic dv/dt Rating Current Sense 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements
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5545E
IRCZ24
IRCZ34
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Text: International Bgg Rectifier ' HEXFET Power MOSFET 4Ô55452 0014684 ^ TE R N A TI O N A L ÔTl • INR PD-9.919 _ IRF9620S RE C T IF IE R Surface Mount Available in Tape & Reel Dynamic dv/dt Rating P-Channel Fast Switching Ease of Paralleling Simple Drive Requirements
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IRF9620S
59ulator
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Text: International I *]Rectifier PD-2.346A 22CGQ045 SCHOTTKY RECTIFIER 35* Amp Major Ratings and Characteristics C haracteristics Description/Features The 22CGQ045 center tap Schottky rectifier has been expressly designed to meet the rigorous requirements of hi-rel environments. It is packaged in the hermetic,
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22CGQ045
22CGQ045
O-254AA
MIL-S-19500
ANSIY14
22CGQ045D
T0-254
22CGQ045U
48SS4S2
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