Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    4933 TRANSISTOR Search Results

    4933 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    4933 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MMBR901

    Abstract: No abstract text available
    Text: MCC Micro Commercial Corp. 21201 Itasca St. Chatsworth, CA 91311 Phone: 818 701-4933 Fax: (818) 701-4939 MMBR901 Description • • • • • NPN Silicon High-Frequency Transistor High Current-Gain – Bandwidth Products Low Noise Figure @ f=1.0GHz – NF(matched)=1.9dB (Typ)


    Original     		PDF MMBR901 10Vdc, MMBR901

    07MS001

    Abstract: transistor 7835 LPT16ED yig oscillator application note germanium transistors NPN bipolar transistor ghz s-parameter RF Bipolar Transistor 07AN001 10GHz bipolar transistor 50 ghz s-parameter
    Text: LPT16ED 30 GHz SiGe Bipolar Transistor Production Information Applications Product Description Low phase noise oscillators up to 16 GHz The LPT16ED is a SiGe low phase noise, high frequency npn transistor for oscillator applications up to 16GHz. The transistor exhibits low 1/f noise and provides


    Original     		PDF LPT16ED LPT16ED 16GHz. May/01 07MS001 transistor 7835 yig oscillator application note germanium transistors NPN bipolar transistor ghz s-parameter RF Bipolar Transistor 07AN001 10GHz bipolar transistor 50 ghz s-parameter

    Transistor C 1279

    Abstract: 07AN001 BIPOLAR TRANSISTOR BARE die yig oscillator application note bipolar transistor ghz s-parameter 07MS001 SiGe POWER TRANSISTOR SiGe Semiconductor bipolar transistor s-parameter bipolar transistor 50 ghz s-parameter
    Text: LPT16ED 30 GHz SiGe Bipolar Transistor Final Applications Product Description The LPT16ED is a silicon germanium low phase noise, high frequency NPN transistor for oscillator applications up to 16GHz. Low phase noise oscillators up to 16 GHz VCO’s, DRO’s and YIG oscillators


    Original     		PDF LPT16ED LPT16ED 16GHz. OC-192 OC-768 38-DST-01 Transistor C 1279 07AN001 BIPOLAR TRANSISTOR BARE die yig oscillator application note bipolar transistor ghz s-parameter 07MS001 SiGe POWER TRANSISTOR SiGe Semiconductor bipolar transistor s-parameter bipolar transistor 50 ghz s-parameter

    PA2423

    Abstract: SiGe PNP PA2423L SIGE SEMICONDUCTOR SiGe PNP transistor
    Text: Application Note 13-APP-03 Maximizing Output Power using Reduced Control Voltage Introduction Several commercially available baseband processors use a power output control that is a voltage source, capable of providing up to a maximum of 2.4V. The power control of SiGe Semiconductor’s PA2423L varies from 0 to 3.3V and


    Original     		PDF 13-APP-03 PA2423L PA2423 13-APP-03 SiGe PNP SIGE SEMICONDUCTOR SiGe PNP transistor

    Untitled

    Abstract: No abstract text available
    Text: SD4933 RF power transistor HF/VHF/UHF N-channel MOSFET Features • Improved ruggedness V BR DSS > 200 V ■ Excellent thermal stability ■ 20:1 all phases load mismatch capability ■ POUT = 300 W min. with 24 dB gain @ 30 MHz ■ In compliance with the 2002/95/EEC european


    Original     		PDF SD4933 2002/95/EEC SD4933

    LSE B9 transformer

    Abstract: SD4933MR LSE B6 transformer SD4933
    Text: SD4933MR 50 V moisture resistant DMOS transistor for ISM applications Datasheet — preliminary data Features • Improved ruggedness V BR DSS > 200 V ■ Excellent thermal stability ■ 20:1 all phases load mismatch capability ■ POUT = 300 W min. with 24 dB gain @ 30 MHz


    Original     		PDF SD4933MR 2002/95/EEC M177MR SD4933MR LSE B9 transformer LSE B6 transformer SD4933

    Untitled

    Abstract: No abstract text available
    Text: SD4933MR 50 V moisture resistant DMOS transistor for ISM applications Datasheet - preliminary data Features • Improved ruggedness V BR DSS > 200 V • Excellent thermal stability • 20:1 all phases load mismatch capability • POUT = 300 W min. with 24 dB gain @ 30 MHz


    Original     		PDF SD4933MR 2002/95/EEC M177MR SD4933MR DocID023664

    Untitled

    Abstract: No abstract text available
    Text: SD4933 HF/VHF/UHF RF power N-channel MOSFET Datasheet - production data Features • Improved ruggedness V BR DSS > 200 V • Excellent thermal stability • 20:1 all phases load mismatch capability • POUT = 300 W min. with 24 dB gain @ 30 MHz • In compliance with the 2002/95/EEC European


    Original     		PDF SD4933 2002/95/EEC SD4933 DocID15487

    70413080

    Abstract: 70473180 SAC-187 Motorola 70483180 70483100 70484200 70487478 70484140 SJ-6357 70483180
    Text: SEMI-CONDUCTOR/TRANSISTOR CROSS-REFERENCE LIST Peavey Electronics Corporation ORIGINAL IN-HOUSE NUMBER ALTERNATE IN-HOUSE NUMBER FIELD REPLACEMENT NUMBER ORDER NUMBER NOTES TO-92 TRANSISTORS 2N3391 A SPS-953(A, B) MPS-8097, 2N6520 MPS-A18, 2N6539, SK-3919


    Original     		PDF 2N3391 SPS-953 MPS-8097, 2N6520 MPS-A18, 2N6539, SK-3919 2N4249 SPS-690, PN-2907A 70413080 70473180 SAC-187 Motorola 70483180 70483100 70484200 70487478 70484140 SJ-6357 70483180

    SD4933

    Abstract: M177 marking code h4 capacitor transistor marking code 325
    Text: SD4933 HF/VHF/UHF RF power N-channel MOSFET Features • Improved ruggedness V BR DSS > 200 V ■ Excellent thermal stability ■ 20:1 all phases load mismatch capability ■ POUT = 300 W min. with 24 dB gain @ 30 MHz ■ In compliance with the 2002/95/EEC European


    Original     		PDF SD4933 2002/95/EEC SD4933 M177 marking code h4 capacitor transistor marking code 325

    Untitled

    Abstract: No abstract text available
    Text: FSGJ164R TM Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFET Intersil Star*Power Rad Hard MOSFETs have been specifically developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the system designer both


    Original     		PDF FSGJ164R

    1E14

    Abstract: 2E12 FSGJ164D1 FSGJ164R3 FSGJ164R4 Rad Hard in Fairchild for MOSFET
    Text: FSGJ164R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFET itle GJ R bjec diat den GR ista Cha l wer SF tho yw s diat den GR ista Cha l wer SF rchi Fairchild Star*Power Rad Hard MOSFETs have been specifically developed for high performance


    Original     		PDF FSGJ164R FSGJ164R 1E14 2E12 FSGJ164D1 FSGJ164R3 FSGJ164R4 Rad Hard in Fairchild for MOSFET

    Untitled

    Abstract: No abstract text available
    Text: FSGJ164R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFET Title SGJ 4R bjec adiat rden GR sista Cha el wer OSF ) utho eyw s adiat rden GR sista Cha el wer OSF , ersil rpor on, mico ucto Intersil Star*Power Rad Hard MOSFETs have been specifically


    Original     		PDF FSGJ164R

    MURATA CERAMIC CHIP ANTENNA GPS 2.1

    Abstract: l1 l2 gps antenna schematic Remote Control Receiver IC CM23 SE4100 SE4100L SE4100L-R 1P LNA 1570MHz gps schematic diagram
    Text: SE4100L PointCharger GPS Receiver IC Preliminary Information Applications Product Description The SE4100 is an integrated GPS receiver designed to receive the L1 signal at 1575.42MHz. The receiver has a low IF architecture, and integrates all of the amplifier,


    Original     		PDF SE4100L SE4100 42MHz. 368MHz 27-DST-01 MURATA CERAMIC CHIP ANTENNA GPS 2.1 l1 l2 gps antenna schematic Remote Control Receiver IC CM23 SE4100L SE4100L-R 1P LNA 1570MHz gps schematic diagram

    rca 40290

    Abstract: RCA 2N3866 rca 40280 2N5070 60890 2N4932 2n4933 rca 2N5070 2N5913 N4012
    Text: RF Power Transistors A w ide variety o f rf types capable o f h andling a broad range¡of power from hf to m ic ro w a v e frequencies 25, W at 30 MHz to 1 W at 1 GHz , sup- Applications E ie~nm H T ft 7o I T0-60, and TO-72 packages. . l - and S-band radar and telem etry


    OCR Scan     		PDF to-72 1N1183A-1 1190AA D2406F-D2406M* 1N3879-1N3883* D2412F-D2412M* 1N3889-1N3893* D2520F-D2520M* 1N3899-1N3903* 1N3909-1 rca 40290 RCA 2N3866 rca 40280 2N5070 60890 2N4932 2n4933 rca 2N5070 2N5913 N4012

    T10H 250V

    Abstract: 2N5877 equivalent tektronix 475 2N6406 2N6408 2N5877 npn 10a 800v 2N5875 BUX82 IN4933
    Text: BUX82 POWER TRANSISTORS 6A, 800V, Fast Switching, Silicon NPN Mesa FEATURES DESCRIPTION • Collector-Base Voltage: up to 800V • Peak Collector Current: 10A • On Time: < 500nS @ 2.5A These high voltage glass passivated power tra n sisto rs c o m b in e fa s t sw itching, low


    OCR Scan     		PDF BUX82 500nS 180/tH 500kHz 1N5820 T10H 250V 2N5877 equivalent tektronix 475 2N6406 2N6408 2N5877 npn 10a 800v 2N5875 BUX82 IN4933

    2N4933

    Abstract: RCA-2N4933 2N4932 VK200 INDUCTOR choke vk200 inductor vk200 transistor 200A 24V RCA transistors rca 249 VK200 FERRITE
    Text: File No. 249 RF P o w e r T ra n s is to r s 2N4932 2N4933 Solid State Division RCA-2N4932* and RCA-2N4933* are epitaxial silicon n-p-n planar transistors of the “ overlay” emitter elec­ trode construction. They are especially intended to pro­ vide high power as class C rf amplifiers for International


    OCR Scan     		PDF 2N4932 2N4933 RCA-2N4932* RCA-2N49331 88MHz) 2N4932 2N4933, 24-volt ST-3250. ST-3230. 2N4933 RCA-2N4933 VK200 INDUCTOR choke vk200 inductor vk200 transistor 200A 24V RCA transistors rca 249 VK200 FERRITE

    t 3866 power transistor

    Abstract: transistor 571 transistor 3866 s transistor d 5702 e d 5703 t 3866 transistor transistor 2N 5688 2N3553 transistor t 3866 3866 transistor 2n RF transistor
    Text: 2N3553 SILICON NPN VHF POWER TRANSISTOR 571 HIGH GAIN DRIVE R FOR 28 V FM APPLICATIONS • • 2.5 W a t 175 MHz Minimum Gain 10 dB mechanical data • • - 6 , 6 - » -12,7 mm - -


    OCR Scan     		PDF 2N3553 O-117 O-128 O-131 O-129 20PEP t 3866 power transistor transistor 571 transistor 3866 s transistor d 5702 e d 5703 t 3866 transistor transistor 2N 5688 2N3553 transistor t 3866 3866 transistor 2n RF transistor

    C940P

    Abstract: D1R0 1N4723
    Text: 52C 6115950 MICROSEMI CORP/POWER »E I ^ H S T S Q ODOGEbO b | 00260 Q/ D T -< 2 > 3 " Series PTC 940, PTC 9 4 1 PTC 942, PTC 943 High Voltage Fast Recovery Power Rectifiers 100 Amperes • 900-1200 Volts FEATURES • Low Forward Voltages • High Voltage Ratings - 1200 Volts


    OCR Scan     		PDF G00D2L C940P D1R0 1N4723

    2N3375

    Abstract: Transistor 2n3375 2n5708 transistor 3866 s 2N3927 2n4440 texas rf power transistor 2n RF transistor TO128 PACKAGE 2N5690
    Text: 2N3375 SILICON NPN VHF POWER TRANSISTOR Distributed Wafer Interdigital Construction Integrated Diffused Em itter Ballast mechanical data All d im e n s io n s a re in m m TO-60 * absolute maximum ratings at 25 ° C case temperature unless otherwise noted


    OCR Scan     		PDF 2N3375 10/32-NF-2A-Thread O-117 O-128 O-131 O-129 2N3375 Transistor 2n3375 2n5708 transistor 3866 s 2N3927 2n4440 texas rf power transistor 2n RF transistor TO128 PACKAGE 2N5690

    2N5707

    Abstract: TO128 PACKAGE 2n RF transistor 2N4127 transistor d 5702 Heat Sink to-39 2n4440 2N5687 TO-128 2n4041
    Text: 2N5707 SILICON NPN VH F POWER TRANSISTOR Emitter Isolated from Case Intermodulation Distortion Better Than 30 dB at 25 W P.E.P. Emitter Resistor Stabilised for Class AB S.S.B. Applications mechanical specification TO -128 absolute maximum ratings Tease = 25 °C


    OCR Scan     		PDF 2N5707 O-128 O-117 O-131 O-129 2N5707 TO128 PACKAGE 2n RF transistor 2N4127 transistor d 5702 Heat Sink to-39 2n4440 2N5687 TO-128 2n4041

    2N6543

    Abstract: 2N6542 2N5875 2N5877 IN4933 IN5820 5A5A
    Text: 2N6542 2N6543 POWER TRANSISTORS 5A, 850V, Fast Switching, Silicon NPN Mesa FEATURES D E S C R IP T IO N • C o lle c t o r -B a s e V o lta g e : u p to 850V T h e s e h ig h v o lt a g e g l a s s p a s s iv a t e d po w e r • P e a k C o lle c t o r C u rre n t: 1 0A


    OCR Scan     		PDF 2N6542 2N6543 500kHz IN5820 1N4937 2N6543 2N5875 2N5877 IN4933 5A5A

    Untitled

    Abstract: No abstract text available
    Text: , - Ì991 IC L 6 4 4 /6 4 5 /6 4 6 /6 4 7 IC L 7 6 4 4 /7 645/7646/7647 S HARRIS Low Voltage S tep -U p Converters j u i y 1991 Features D escription • +5V @ 40mA From a Single Cell Battery The ICL644, IC L645 and IC L646 are low pow er fixed +5V output s te p -u p D C -D C converters designed for operation


    OCR Scan     		PDF ICL644, ICL647, ICL646

    MJE13007E

    Abstract: JE13006 MJE13Q07 JE13007
    Text: MOTOROLA SC XSTRS/R 1EE F D I b3b72S4 a G fl SB T S ê | T - 33-13 MOTOROLA MJE13006 MJE13007 SEMICONDUCTOR TECHNICAL DATA D esigners Data, Sheet 8 AM PERE NPN SILICON POWER TRANSISTORS 3 00 and 4 0 0 V O L T S 80 W ATTS SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS


    OCR Scan     		PDF b3b72S4 MJE13006 MJE13007 MJE13007E JE13006 MJE13Q07 JE13007