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495MW Datasheets Context Search
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MARKING 3D regulator 5V
Abstract: marking code E5 SMD ic power supply DVD schematic diagram smd marking e5 rf smd transistor marking ld3 LM4857 LM4857GR LM4857ITL LM4857SP
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LM4857 LM4857 495mW CSP-9-111C2) CSP-9-111S2) CSP-9-111S2. MARKING 3D regulator 5V marking code E5 SMD ic power supply DVD schematic diagram smd marking e5 rf smd transistor marking ld3 LM4857GR LM4857ITL LM4857SP | |
3D smd marking
Abstract: LM4859 LM4859SP MARKING 3D regulator 5V
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LM4859 LM4859 495mW CSP-9-111C2) CSP-9-111S2) CSP-9-111S2. 3D smd marking LM4859SP MARKING 3D regulator 5V | |
Contextual Info: MOSEL MS6264 8K x 8 CMOS Static RAM FEATURES DESCRIPTION >Available in 70/100 ns Max. >Automatic power-down when chip disabled • Lower power consumption: MS6264 - 495mW (Max.) Operating - 82.5mW (Max.) Standby - 11 mW (Max.) Power Down MS6264L - 467.5mW (Max.) Operating |
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MS6264 495mW MS6264L MS6264 S6264-70PC P28-1 S6264-70FC S28-2 S6264L-70PC | |
SMD MARKING CODE 12w
Abstract: LM4859 LM4859SP LM4859TL MARKING 3D regulator 5V smd marking code 3D
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LM4859 LM4859 495mW SMD MARKING CODE 12w LM4859SP LM4859TL MARKING 3D regulator 5V smd marking code 3D | |
Contextual Info: 19-1963; Rev 0; 2/01 EVALUATIO N KIT AVA ILABLE 16:1 Serializer, 3.3V, 2.5Gbps, SDH/SONET, with Clock Synthesis and LVPECL Inputs Features ♦ Single +3.3V Supply ♦ 495mW Power Consumption ♦ Exceeds ANSI, ITU, and Bellcore Specifications ♦ 155Mbps 16-bit wide Parallel to 2.5Gbps Serial |
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MAX3891 16-bit 155Mbps 52MHz, 76MHz MAX3891 | |
LM4857
Abstract: LM4857ITL LM4857SP marking code E5 SMD ic
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LM4857 LM4857 495mW LM4857ITL LM4857SP marking code E5 SMD ic | |
330nF capacitor
Abstract: LVDS Serializer MAX3867 MAX3880 MAX3890 MAX3890ECB
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495mW 155Mbps 16-bit 52MHz, 76MHz, 84MHz, 88MHz) MAX3890ECB MAX3890 330nF capacitor LVDS Serializer MAX3867 MAX3880 MAX3890 MAX3890ECB | |
Contextual Info: 19-1963; Rev 0; 2/01 ILABLE N KIT AVA EVALUATIO 16:1 Serializer, 3.3V, 2.5Gbps, SDH/SONET, with Clock Synthesis and LVPECL Inputs Features ♦ Single +3.3V Supply ♦ 495mW Power Consumption ♦ Exceeds ANSI, ITU, and Bellcore Specifications ♦ 155Mbps 16-bit wide Parallel to 2.5Gbps Serial |
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MAX3891 16-bit 155Mbps 52MHz, 76MHz, 84ation: 10x10x1mm 21-0084C | |
Contextual Info: 19-1963; Rev 0; 2/01 ILABLE N KIT AVA EVALUATIO 16:1 Serializer, 3.3V, 2.5Gbps, SDH/SONET, with Clock Synthesis and LVPECL Inputs Features ♦ Single +3.3V Supply ♦ 495mW Power Consumption ♦ Exceeds ANSI, ITU, and Bellcore Specifications ♦ 155Mbps 16-bit wide Parallel to 2.5Gbps Serial |
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495mW 155Mbps 16-bit 52MHz, 76MHz, 84MHz, 88MHz) MAX3891 | |
ci smd cd3
Abstract: LM4844
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LM4844 495mW ci smd cd3 | |
TLA30CZA
Abstract: LM4859SP
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LM4859 495mW TLA30CZA LM4859SP | |
smd transistor marking ld3
Abstract: 2.5mm stereo jack plug 3D smd marking loud speaker MARKING 3D regulator 5V marking code E5 SMD ic SMD LD3 smd marking e5 rf smd marking f2 smd transistor LD4
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LM4844 LM4844 495mW CSP-9-111S2. smd transistor marking ld3 2.5mm stereo jack plug 3D smd marking loud speaker MARKING 3D regulator 5V marking code E5 SMD ic SMD LD3 smd marking e5 rf smd marking f2 smd transistor LD4 | |
1LD5
Abstract: SMD LD3 smd marking e5 rf 7106D LM4844 LM4844TL
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LM4844 LM4844 495mW 1LD5 SMD LD3 smd marking e5 rf 7106D LM4844TL | |
smd marking e5 rf
Abstract: LM4857 LM4857GR LM4857ITL LM4857SP marking code E5 SMD ic
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LM4857 LM4857 495mW smd marking e5 rf LM4857GR LM4857ITL LM4857SP marking code E5 SMD ic | |
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Contextual Info: LM4859 Stereo 1.2W Audio Sub-system with 3D Enhancement General Description Key Specifications The LM4859 is an integrated audio sub-system designed for stereo cell phone applications. Operating on a 3.3V supply, it combines a stereo speaker amplifier delivering 495mW per |
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LM4859 495mW | |
DP83223V
Abstract: t592 PE-68515L s558-5999-46 "network interface cards" "Fast Link Pulse"
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DP83846A DP83846A SNLS063E 10BASE-T 100BASE-TX DP83223V t592 PE-68515L s558-5999-46 "network interface cards" "Fast Link Pulse" | |
toshiba 7 pin a215
Abstract: A227
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TC514800AJL/AFTL70/80 TC514800AJL/AFTL toshiba 7 pin a215 A227 | |
Contextual Info: 1,M3,575 1,'ORDX 4 BIT DYNAMIC RAM * This is a ^ a n c e d information and specifications are subject to change without notice. DESCRIPTION The TC514400JL/ZL is the new generation dynamic RAM organized 1,048,576 words by 4 bits. The TC514400JL/ZL utilizes TOSHIBA'S CMOS Silicon gate process technology as well as |
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TC514400JL/ZL TC514400JL/ZL-80 TC514400JL/ZL-- | |
TC511664BJl
Abstract: toshiba TC511664BJL TC511664
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A302 w3
Abstract: aa z8b
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TC514410J/Z-80» TC514410J/Z-10 TC514410J/Z 514410J/Z TC514410J/Z-80, TC514410J/M A302 w3 aa z8b | |
Contextual Info: •HYUNDAI H Y 5 1 17 8 0 4 B ,H Y 5 1 16 8 0 4 B 2Mx8, Extended Data Out mode DESCRIPTION This family is a 16M bit dynamic RAM organized 2,097,152 x 8-bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The circuit and process |
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HY5116100BContextual Info: HY5116100B Series -HYUNDAI 16Mx 1-bit CMOS DRAM DESCRIPTION The HY5116100B is the new generation and fast dynamic RAM organized 16,777,216 x 1-bit. TheHY5116100B utilizes Hyundai’s C M O S silicon gate process technology as well as advanced circuit techniques to provide wide |
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HY5116100B TheHY5116100B 1AD41-00-MAY9S 4b750Ã 0GG435b HY5116100BJ HY5116100BSLJ | |
Contextual Info: •HYUNDAI SEMICONDUCTOR HY5116400 Series 4M X 4-bit CMOS DRAM DESCRIPTION The HY5116400 is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY5116400 utilizes Hyundai’s C M O S silicon gate process technology as well as advanced circuit techniques to provide wide operating |
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HY5116400 1AD02-10-APR93 HY5116400JC HY5116400LJC HY5116400TC HY5116400LTC | |
Contextual Info: HY5116400A Series •{HYUNDAI 4M X 4-bit CMOS DRAM DESCRIPTION The HY5116400A is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY5116400A utilizes Hyundai’s CMOS silicon gate process technology as advanced circuit techniques to provide wide operating |
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HY5116400A HY5116400A 1AD23-10-MAY95 HY5116400AJ HY5116400ASLJ HY511 400AT |