75329p
Abstract: 75329G HUF75329P3 HUF75329S3ST TB334 75329S HUF75329G3 HUF75329S3S 75329
Text: HUF75329G3, HUF75329P3, HUF75329S3S Data Sheet January 2000 File Number 49A, 55V, 0.024 Ohm, N-Channel UltraFET Power MOSFETs Features These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology
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HUF75329G3,
HUF75329P3,
HUF75329S3S
75329p
75329G
HUF75329P3
HUF75329S3ST
TB334
75329S
HUF75329G3
HUF75329S3S
75329
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PDF
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Untitled
Abstract: No abstract text available
Text: FDMS8660AS N-Channel tm PowerTrench SyncFETTM 30V, 49A, 2.1m: Features General Description Max rDS on = 2.1m: at VGS = 10V, ID = 28A The FDMS8660AS has been designed to minimize losses in power conversion application. Advancements in both silicon and
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FDMS8660AS
FDMS8660AS
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AN7254
Abstract: AN7260 AN9321 AN9322 HRFZ44N TB334
Text: HRFZ44N Data Sheet December 2001 49A, 55V, 0.022 Ohm, N-Channel UltraFET Power MOSFET This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in
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HRFZ44N
AN7254
AN7260
AN9321
AN9322
HRFZ44N
TB334
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PDF
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FDMS8660AS
Abstract: No abstract text available
Text: FDMS8660AS N-Channel PowerTrench SyncFET tm TM 30V, 49A, 2.1mΩ Features General Description Max rDS on = 2.1mΩ at VGS = 10V, ID = 28A The FDMS8660AS has been designed to minimize losses in power conversion application. Advancements in both silicon and
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FDMS8660AS
FDMS8660AS
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PDF
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Untitled
Abstract: No abstract text available
Text: HRFZ44N Data Sheet June 1999 49A, 55V, 0.022 Ohm, N-Channel UltraFET Power MOSFET This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in
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HRFZ44N
TA75329or
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FDMS8660AS
Abstract: 4410 mosfet fairchild top marking fdms8660
Text: FDMS8660AS N-Channel PowerTrench SyncFET TM tm 30V, 49A, 2.1m: Features General Description Max rDS on = 2.1m: at VGS = 10V, ID = 28A The FDMS8660AS has been designed to minimize losses in power conversion application. Advancements in both silicon and
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FDMS8660AS
FDMS8660AS
4410 mosfet
fairchild top marking
fdms8660
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PDF
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75329G
Abstract: 75329P 75329S HUF75329G3 HUF75329P3 HUF75329S3S HUF75329S3ST TB334
Text: HUF75329G3, HUF75329P3, HUF75329S3S Data Sheet December 2001 49A, 55V, 0.024 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,
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Original
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HUF75329G3,
HUF75329P3,
HUF75329S3S
75329G
75329P
75329S
HUF75329G3
HUF75329P3
HUF75329S3S
HUF75329S3ST
TB334
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PDF
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75329p
Abstract: 75329G HUFA75329S3S TB334 75329S HUFA75329G3 HUFA75329P3 HUFA75329S3ST
Text: HUFA75329G3, HUFA75329P3, HUFA75329S3S Data Sheet June 2002 49A, 55V, 0.024 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,
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Original
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HUFA75329G3,
HUFA75329P3,
HUFA75329S3S
75329p
75329G
HUFA75329S3S
TB334
75329S
HUFA75329G3
HUFA75329P3
HUFA75329S3ST
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PDF
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5A66
Abstract: No abstract text available
Text: Agilent N5700 Series System DC Power Supplies Models: N5741A-49A, N5750A-52A, N5761A-69A, N5770A-72A Data Sheet • 24 models: 750 W and 1500 W output power • Up to 600 V and up to 180 A • Small high density 1 U package • Built-in voltage and current measurement
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N5700
N5741A-49A,
N5750A-52A,
N5761A-69A,
N5770A-72A
5989-1330EN
5A66
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PDF
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N5765A
Abstract: N5741A N5700 N5747A N5740A N5746 N5752A N5766A N5770A Xantrex
Text: Agilent N5700 Series System DC Power Supplies Models: N5741A-49A, N5750A-52A, N5761A-69A, N5770A-72A Data Sheet • 24 Models: 750 W and 1500 W output power • Up to 600 V and up to 180 A • Small high density 1 U package • Built-in voltage and current measurement
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N5700
N5741A-49A,
N5750A-52A,
N5761A-69A,
N5770A-72A
com/find/N5700
5989-1330EN
N5765A
N5741A
N5747A
N5740A
N5746
N5752A
N5766A
N5770A
Xantrex
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Untitled
Abstract: No abstract text available
Text: FDI150N10 N-Channel PowerTrench MOSFET tm 100V, 57A, 16m Features General Description • RDS on = 12m ( Typ.) @ VGS = 10V, ID = 49A • Fast switching speed • Low gate charge This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been
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FDI150N10
O-262
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Untitled
Abstract: No abstract text available
Text: FDMS8662 N-Channel tm PowerTrench MOSFET 30V, 49A, 2.0m: Features General Description Max rDS on = 2.0m: at VGS = 10V, ID = 28A The FDMS8662 has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest
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FDMS8662
FDMS8662
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FDP150N10
Abstract: No abstract text available
Text: FDP150N10 tm N-Channel PowerTrench MOSFET 100V, 57A, 15mΩ Features General Description • RDS on = 12mΩ ( Typ.) @ VGS = 10V, ID = 49A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet
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FDP150N10
O-220
FDP150N10
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FDB150N10
Abstract: marking 49a
Text: FDB150N10 tm N-Channel PowerTrench MOSFET 100V, 57A, 15mΩ Features General Description • RDS on = 12mΩ ( Typ.) @ VGS = 10V, ID = 49A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet
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FDB150N10
FDB150N10
marking 49a
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FDMS3500
Abstract: No abstract text available
Text: FDMS3500 tm N-Channel Power Trench MOSFET 75V, 49A, 14.5mΩ Features General Description Max rDS on = 14.5mΩ at VGS = 10V, ID = 11.5A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and
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FDMS3500
FDMS3500
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PDF
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Untitled
Abstract: No abstract text available
Text: FDMS3500 tm Trench N-Channel Power MOSFET 75V, 49A, 14.5m: Features General Description Max rDS on = 14.5m: at VGS = 10V, ID = 11.5A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and
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FDMS3500
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PDF
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FDMS3500
Abstract: No abstract text available
Text: FDMS3500 tm N-Channel Power Trench MOSFET 75V, 49A, 14.5m: Features General Description Max rDS on = 14.5m: at VGS = 10V, ID = 11.5A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and
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FDMS3500
FDMS3500
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PDF
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FDMS8460
Abstract: No abstract text available
Text: FDMS8460 tm N-Channel Power Trench MOSFET 40V, 49A, 2.2m: Features General Description Max rDS on = 2.2m: at VGS = 10V, ID = 25A Advanced Package and Silicon combination for low rDS(on) This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process thant has
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FDMS8460
FDMS8460
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PDF
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Untitled
Abstract: No abstract text available
Text: FDMS3662 tm Trench N-Channel Power MOSFET 100V, 49A, 14.8m: Features General Description Max rDS on = 14.8m: at VGS = 10V, ID = 8.9A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and
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FDMS3662
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pd25a
Abstract: FDMS8460
Text: FDMS8460 tm N-Channel Power Trench MOSFET 40V, 49A, 2.2mΩ Features General Description Max rDS on = 2.2mΩ at VGS = 10V, ID = 25A Advanced Package and Silicon combination for low rDS(on) This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process thant has
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FDMS8460
FDMS8460
pd25a
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PDF
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Untitled
Abstract: No abstract text available
Text: FDMS5352 tm Trench N-Channel Power MOSFET 60V, 49A, 6.7m: Features General Description Max rDS on = 6.7m: at VGS = 10V, ID = 13.6A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and
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FDMS5352
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PDF
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Untitled
Abstract: No abstract text available
Text: FDP150N10 tm N-Channel PowerTrench MOSFET 100V, 57A, 15mΩ Features General Description • RDS on = 12mΩ ( Typ.) @ VGS = 10V, ID = 49A • Fast switching speed • Low gate charge This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been
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FDP150N10
O-220
FDP150N10
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PDF
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FDI150N10
Abstract: No abstract text available
Text: FDI150N10 tm N-Channel PowerTrench MOSFET 100V, 57A, 16m Features General Description • RDS on = 12m ( Typ.) @ VGS = 10V, ID = 49A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet
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FDI150N10
O-262
FDI150N10
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FDMS8662
Abstract: 207 fairchild
Text: FDMS8662 tm N-Channel PowerTrench MOSFET 30V, 49A, 2.0m: Features General Description Max rDS on = 2.0m: at VGS = 10V, ID = 28A The FDMS8662 has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest
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FDMS8662
FDMS8662
207 fairchild
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