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    HYM76V4M655HGLT6-8

    Abstract: HYM76V4M655HGLT6-P HYM76V4M655HGLT6-S HYM76V4M655HGT6-P HYM76V4M655HGT6-S
    Text: 4M x64 bits P C 1 0 0 S D R A M S O D IM based on 4Mx16 SDRAM with LVTTL, 4 banks & 4K Refresh HYM76V4M655HG L T6 Series D E S C R IP T IO N The Hynix HYM76V4M655HG(L)T6 Series are 4Mx64bits Synchronous DRAM Modules. The modules are composed of four 4Mx16bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 168pin


    Original     		PDF PC100 4Mx16 HYM76V4M655HG 4Mx64bits 4Mx16bits 400mil 54pin 168pin HYM76V4M655HGLT6-8 HYM76V4M655HGLT6-P HYM76V4M655HGLT6-S HYM76V4M655HGT6-P HYM76V4M655HGT6-S

    Untitled

    Abstract: No abstract text available
    Text: 4Mx64 bits PC100 SDRAM Unbuffered DIMM based on 4Mx16 SDRAM with LVTTL, 4 banks & 4K Refresh HYM76V4655HGT6 Series DESCRIPTION The Hynix HYM76V4655HGT6 Series are 4Mx64bits Synchronous DRAM Modules. The modules are composed of four 4x16bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 168pin glass-epoxy


    Original     		PDF 4Mx64 PC100 4Mx16 HYM76V4655HGT6 4Mx64bits 4x16bits 400mil 54pin 168pin

    DIMM 1999

    Abstract: No abstract text available
    Text: SERIAL PRESENCE DETECT PC100 Unbuffered DIMM PC100 Unbuffered DIMM 168pin 6Layer SPD Specification(64Mb C-die base) Rev. 0.0 July 1999 Rev 0.0 July 1999 SERIAL PRESENCE DETECT PC100 Unbuffered DIMM M366S0424CT0-C80/C1H/C1L • Organization : 4Mx64 • Composition : 4Mx16 *4


    Original     		PDF PC100 168pin) M366S0424CT0-C80/C1H/C1L 4Mx64 4Mx16 K4S641632C-TC80/C1H/C1L 375mil 4K/64ms DIMM 1999

    Untitled

    Abstract: No abstract text available
    Text: M366S0424DTS PC100 Unbuffered DIMM M366S0424DTS SDRAM DIMM 4Mx64 SDRAM DIMM based on 4Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M366S0424DTS is a 4M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung


    Original     		PDF M366S0424DTS PC100 M366S0424DTS 4Mx64 4Mx16, 400mil 168-pin

    Untitled

    Abstract: No abstract text available
    Text: M464S0424FTS PC133/PC100 SODIMM M464S0424FTS SDRAM SODIMM 4Mx64 SDRAM SODIMM based on 4Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M464S0424FTS is a 4M bit x 64 Synchronous • Performance range Dynamic RAM high density memory module. The Samsung


    Original     		PDF M464S0424FTS PC133/PC100 M464S0424FTS 4Mx64 4Mx16, 400mil 144-pin

    Untitled

    Abstract: No abstract text available
    Text: White Electronic Designs WED3DG644V-D1 32MB – 4Mx64 SDRAM, UNBUFFERED FEATURES DESCRIPTION PC100 and PC133 compatible Serial Presence Detect with EEPROM The WED3DG644V is a 4Mx64 synchronous DRAM module which consists of four 4Mx16 SDRAM components in TSOP II package, and one 2Kb EEPROM in an 8


    Original     		PDF WED3DG644V-D1 4Mx64 PC100 PC133 WED3DG644V 4Mx16

    100MHZ

    Abstract: 133MHZ WED3DL644V
    Text: White Electronic Designs WED3DL644V 4Mx64 SDRAM FEATURES DESCRIPTION The WED3DL644V is a 4Mx64 Synchronous DRAM configured as 4x1Mx64. The SDRAM BGA is constructed with four 4Mx16 SDRAM die mounted on a multi-layer laminate substrate and packaged in a 153 lead, 17mm by


    Original     		PDF WED3DL644V 4Mx64 WED3DL644V 4x1Mx64. 4Mx16 133MHZ, 125MHZ 100MHZ. 100MHZ 133MHZ

    WED3DG644V-D1

    Abstract: Y14W cs 6-06
    Text: White Electronic Designs WED3DG644V-D1 32MB – 4Mx64 SDRAM, UNBUFFERED FEATURES DESCRIPTION „ PC100 and PC133 compatible „ Burst Mode Operation „ Auto and Self Refresh capability „ LVTTL compatible inputs and outputs „ Serial Presence Detect with EEPROM


    Original     		PDF WED3DG644V-D1 4Mx64 PC100 PC133 WED3DG644V 4Mx16 WED3DG644V-D1 Y14W cs 6-06

    WEDPN4M64V-XBX

    Abstract: No abstract text available
    Text: WEDPN4M64V-XBX 4Mx64 Synchronous DRAM FEATURES GENERAL DESCRIPTION ! High Frequency = 100, 125MHz The 32MByte 256Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 4 chips containing 67,108,864 bits. Each chip is internally configured as a quadbank DRAM with a synchronous interface. Each of the chip’s


    Original     		PDF WEDPN4M64V-XBX 4Mx64 125MHz 32MByte 256Mb) 216-bit 100MHz WEDPN4M64V-XBX

    Untitled

    Abstract: No abstract text available
    Text: WEDPN4M64V-XBX HI-RELIABILITY PRODUCT 4Mx64 Synchronous DRAM FEATURES GENERAL DESCRIPTION • High Frequency = 100, 125MHz The 32MByte 256Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 4 chips containing 67,108,864 bits. Each chip is internally configured as a quad-bank DRAM with a


    Original     		PDF WEDPN4M64V-XBX 4Mx64 125MHz WEDPN4M64V-XBX 32MByte 256Mb) 100MHz

    Untitled

    Abstract: No abstract text available
    Text: M464S0424DT1 PC100 SODIMM M464S0424DT1 SDRAM SODIMM 4Mx64 SDRAM SODIMM based on 4Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M464S0424DT1 is a 4M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung


    Original     		PDF M464S0424DT1 M464S0424DT1 PC100 4Mx64 4Mx16, 400mil 144-pin

    K4E641612D

    Abstract: No abstract text available
    Text: DRAM MODULE M366F040 8 4DT1-C Unbuffered 4Mx64 DIMM (4Mx16 base) Revision 0.0 Dec. 1999 DRAM MODULE Revision History Version 0.0 (Dec. 1999) • The 4th generation of 64M DRAM components are applied to this module. M366F040(8)4DT1-C DRAM MODULE M366F040(8)4DT1-C


    Original     		PDF M366F040 4Mx64 4Mx16 4Mx16, 4Mx64bits 4Mx16bits K4E641612D

    BSS960A

    Abstract: VDEBC2304
    Text: V-Data VDEBC2304 PC-133 SDRAM Unbuffered SO-DIMM 4Mx64bits SDRAM DIMM based on 4Mx16, 4Bank, 4K Refresh, 3.3V SDRAM General Description Features The VDEBC2304 is 4Mx64 bits Synchronous DRAM Modules, The modules are composed of four 4Mx16 bits CMOS Synchronous DRAMs in TSOP-II 400mil


    Original     		PDF VDEBC2304 PC-133 4Mx64bits 4Mx16, VDEBC2304 4Mx64 4Mx16 400mil 54pin 144pin BSS960A

    Untitled

    Abstract: No abstract text available
    Text: White Electronic Designs WED3DG644V-D1 32MB- 4Mx64 SDRAM, UNBUFFERED FEATURES DESCRIPTION PC100 and PC133 compatible Serial Presence Detect with EEPROM The WED3DG644V is a 4Mx64 synchronous DRAM module which consists of four 4Mx16 SDRAM components in TSOP II package, and one 2Kb EEPROM in an 8


    Original     		PDF WED3DG644V-D1 4Mx64 PC100 PC133 WED3DG644V 4Mx16

    Untitled

    Abstract: No abstract text available
    Text: 4Mx64 bits PC133 SDRAM SO DIMM based on 4Mx16 SDRAM with LVTTL, 4 banks & 4K Refresh HYM76V4M635HG L T6 Series Preliminary DESCRIPTION The Hyundai HYM76V4M635HGT6 Series are 4Mx64bits Synchronous DRAM Modules. The modules are composed of four 4Mx16bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 168pin


    Original     		PDF 4Mx64 PC133 4Mx16 HYM76V4M635HG HYM76V4M635HGT6 4Mx64bits 4Mx16bits 400mil 54pin 168pin

    Untitled

    Abstract: No abstract text available
    Text: . IBM13N4644MCB IBM13N4734MCB 4M x 64/72 One-Bank Unbuffered SDRAM Module Features • 168-Pin Unbuffered 8-Byte Dual In-Line Memory Module • 4Mx64/72 Synchronous DRAM DIMM • Three speed sorts: • -260 and -360 for PC100 applications • -10 for 66MHz applications typical


    Original     		PDF IBM13N4644MCB IBM13N4734MCB 168-Pin 4Mx64/72 PC100 66MHz

    Untitled

    Abstract: No abstract text available
    Text: IBM11M4730C4M x 72 E12/10, 5.0V, Au. IBM13T4644MPE 4M x 64 PC100 SDRAM SO DIMM Features • 144 Pin JEDEC Standard, 8 Byte Small Outline Dual-In-line Memory Module • 4Mx64 Synchronous DRAM SO DIMM • Performance: PC100 -360 3 Units CAS Latency fCK Clock Frequency


    Original     		PDF IBM11M4730C4M E12/10, IBM13T4644MPE PC100 4Mx64 PC100

    HYM7V65400

    Abstract: No abstract text available
    Text: HYM7V65400C F-Series Unbuffered 4Mx64 bit SDRAM MODULE based on 2Mx8 SDRAM, LVTTL, 4K-Refresh DESCRIPTION The HYM7V65400C is high speed 3.3Volt CMOS Synchronous DRAM module consisting of sixteen 2Mx8 bit Synchronous DRAMs in 44-pin TSOPII and one 8-pin TSSOP 2K bit EEPROM on a 168-pin glass-epoxy


    Original     		PDF HYM7V65400C 4Mx64 44-pin 168-pin HYM7V65400

    Untitled

    Abstract: No abstract text available
    Text: IB M 1 1 M 4 6 4 0 C IB M 1 1 M 4 6 4 0 C B 4M X 64 DRAM MODULE • Au contacts • Optimized for byte-write non-parity applications Features • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • System Performance Benefits: - • 4Mx64 Fast Page Mode DIMM


    OCR Scan     		PDF 4Mx64 110ns 130ns 03H7156

    Untitled

    Abstract: No abstract text available
    Text: IBM11M4640C 4M x 64 DRAM MODULE Features • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • 4Mx64 Fast Page Mode DIMM • Performance: -60 -70 W c RAS Access Time 60ns 70ns fc A C CAS Access Time 20ns 25ns tA A Access Time From Address 35ns


    OCR Scan     		PDF IBM11M4640C 4Mx64 110ns 130ns

    Untitled

    Abstract: No abstract text available
    Text: VZÄ WHITE /MICROELECTRONICS WPN644106GM0VG 32MBYTE 4Mx64 Synchronous DRAM (3.3V Supply) SO-DIMM MODULE A D V A N C ED * GENERAL DESCRIPTION FEATURES • M a x im u m fre q u e n c y = 1 0 0 M H z (tcc=1 0ns) T h e W h ite M ic ro e le c tro n ic s W P N 6 44 1 0 B G 1 -1OVG is a 4 M x 64


    OCR Scan     		PDF WPN644106GM0VG 32MBYTE 4Mx64) 54-pin 400-m 144-pin

    11-CQ2

    Abstract: No abstract text available
    Text: IBM13N4649JC IBM13N4739JC PRELIMINARY 4M X 64/72 2 Bank Unbuffered SDRAM Module Features • 168 Pin emerging JEDEC Standard, Unbuffered Byte Dual In-line Memory Module • 4Mx64/72 Synchronous DRAM DIMM • Performance: CAS Latency fcK Clock Frequency tcK


    OCR Scan     		PDF IBM13N4649JC IBM13N4739JC 4Mx64/72 11-CQ2

    Untitled

    Abstract: No abstract text available
    Text: HYM76V4655HGT6 4Mx64, 4Mx16 based, PC100 DESCRIPTION The Hynix HYM76V4655HGT6 Series are 4Mx64bits Synchronous DRAM Modules. The modules are composed of four 4x16bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 168pin glass-epoxy


    OCR Scan     		PDF HYM76V4655HGT6 4Mx64, 4Mx16 PC100 HYM76V4655HGT6 4Mx64bits 4x16bits 400mil 54pin 168pin

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM364V400AK/AS KMM364V400AK/AS Fast Page Mode 4Mx64 DRAM DIMM, 4K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM364V400A is a 4M bit x 64 Dynamic RAM high density memory module. The • Performance Range: Samsung KMM364V400A consists of sixteen CMOS


    OCR Scan     		PDF KMM364V400AK/AS KMM364V400AK/AS 4Mx64 KMM364V400A 300mil cycles/64ms 1000mil) KM44V4000AK,