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    4A 250V AC Search Results

    4A 250V AC Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    D1U74T-W-1600-12-HB4AC Murata Manufacturing Co Ltd AC/DC 1600W, Titanium Efficiency, 74 MM , 12V, 12VSB, Inlet C20, Airflow Back to Front, RoHs Visit Murata Manufacturing Co Ltd
    D1U54T-M-2500-12-HB4C Murata Manufacturing Co Ltd 2.5KW 54MM AC/DC 12V WITH 12VDC STBY BACK TO FRONT AIR Visit Murata Manufacturing Co Ltd
    RQK2501YGDQA#H1 Renesas Electronics Corporation Nch Single Power Mosfet 250V 0.4A 5400Mohm Mpak/Sc-59 Visit Renesas Electronics Corporation
    HAT2089R-EL-E Renesas Electronics Corporation Nch Single Power Mosfet 250V 2A 600Mohm Sop8 Visit Renesas Electronics Corporation
    H5N2508DL-E Renesas Electronics Corporation Nch Single Power Mosfet 250V 7A 630Mohm DPAK(L)-(2)/To-251 Visit Renesas Electronics Corporation

    4A 250V AC Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    1E14

    Abstract: 2E12 FSL234R4 JANSR2N7397 Rad Hard in Fairchild for MOSFET hirel systems transformer 3OBE
    Text: JANSR2N7397 Formerly FSL234R4 4A, 250V, 0.610 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 [ /Title JANS R2N73 97 /Subject (4A, 250V, 0.610 Ohm, Rad Hard, NChannel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, Semiconductor, 4A, 250V, 0.610


    Original     		PDF JANSR2N7397 FSL234R4 R2N73 1E14 2E12 FSL234R4 JANSR2N7397 Rad Hard in Fairchild for MOSFET hirel systems transformer 3OBE

    Rad Hard in Fairchild for MOSFET

    Abstract: mosfet 250V 4A 1E14 2E12 FRL234R4 JANSR2N7278 MOSFET A3
    Text: JANSR2N7278 Formerly FRL234R4 4A, 250V, 0.700 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 [ /Title JANS R2N72 78 /Subject (4A, 250V, 0.700 Ohm, Rad Hard, NChannel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, Semiconductor, 4A, 250V, 0.700


    Original     		PDF JANSR2N7278 FRL234R4 R2N72 1000K 100opment. Rad Hard in Fairchild for MOSFET mosfet 250V 4A 1E14 2E12 FRL234R4 JANSR2N7278 MOSFET A3

    Untitled

    Abstract: No abstract text available
    Text: JANSR2N7397 Formerly FSL234R4 4A, 250V, 0.610 Ohm, Rad Hard, N-Channel Power MOSFET January 2002 Features Description • 4A, 250V, rDS ON = 0.610Ω The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs


    Original     		PDF JANSR2N7397 FSL234R4

    Untitled

    Abstract: No abstract text available
    Text: FSL234D, FSL234R 4A, 250V, 0.610 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs December 2001 Features Description • 4A, 250V, rDS ON = 0.610Ω The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs


    Original     		PDF FSL234D, FSL234R

    IRSM836-044MA

    Abstract: No abstract text available
    Text: IRSM836-044MA 4A, 250V Integrated Power Module for Small Appliance Motor Drive Applications Description IRSM836-044MA is a 4A, 250V Integrated Power Module IPM designed for advanced appliance motor drive applications such as energy efficient fans and pumps. IR's technology offers an extremely compact, high


    Original     		PDF IRSM836-044MA IRSM836-044MA 12x12mm

    1E14

    Abstract: 2E12 FRL234D FRL234H FRL234R
    Text: FRL234D, FRL234R, FRL234H 4A, 250V, 0.700 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 4A, 250V, RDS on = 0.700Ω TO-205AF • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current


    Original     		PDF FRL234D, FRL234R, FRL234H O-205AF 100KRAD 300KRAD 1000KRAD 3000KRAD 1E14 2E12 FRL234D FRL234H FRL234R

    Untitled

    Abstract: No abstract text available
    Text: IRSM836-044MA 4A, 250V Integrated Power Module for Small Appliance Motor Drive Applications Description IRSM836-044MA is a 4A, 250V Integrated Power Module IPM designed for advanced appliance motor drive applications such as energy efficient fans and pumps. IR's technology offers an extremely compact, high


    Original     		PDF IRSM836-044MA IRSM836-044MA 12x12mm

    N-channel enhancement 200V 60A

    Abstract: TC 9310 IC DATA SHEET 1E14 2E12 FRL234D FRL234H FRL234R
    Text: FRL234D, FRL234R, FRL234H 4A, 250V, 0.700 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 4A, 250V, RDS on = 0.700Ω TO-205AF • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current


    Original     		PDF FRL234D, FRL234R, FRL234H O-205AF 100KRAD 300KRAD 1000KRAD 3000KRAD N-channel enhancement 200V 60A TC 9310 IC DATA SHEET 1E14 2E12 FRL234D FRL234H FRL234R

    IRMCS1471

    Abstract: JS-001-2012 2C diode IRMCK171
    Text: IRSM836-044MA 4A, 250V Integrated Power Module for Small Appliance Motor Drive Applications Description IRSM836-044MA is a 4A, 250V Integrated Power Module IPM designed for advanced appliance motor drive applications such as energy efficient fans and pumps. IR's technology offers an extremely compact, high


    Original     		PDF IRSM836-044MA IRSM836-044MA 12x12mm IRMCS1471 JS-001-2012 2C diode IRMCK171

    Untitled

    Abstract: No abstract text available
    Text: FRL234D, FRL234R, FRL234H 4A, 250V, 0.700 Ohm, Rad Hard, N-Channel Power MOSFETs December 2001 Features Package • 4A, 250V, RDS on = 0.700Ω TO-205AF • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current


    Original     		PDF FRL234D, FRL234R, FRL234H O-205AF 100KRAD 300KRAD 1000KRAD 3000KRAD

    PQFN footprint

    Abstract: No abstract text available
    Text: IRSM836-044MA 4A, 250V Integrated Power Module for Small Appliance Motor Drive Applications Description IRSM836-044MA is a 4A, 250V Integrated Power Module IPM designed for advanced appliance motor drive applications such as energy efficient fans and pumps. IR's technology offers an extremely compact, high


    Original     		PDF IRSM836-044MA IRSM836-044MA 12x12mm PQFN footprint

    Untitled

    Abstract: No abstract text available
    Text: JANSR2N7278 Formerly FRL234R4 4A, 250V, 0.700 Ohm, Rad Hard, N-Channel Power MOSFET January 2002 Features Description • 4A, 250V, rDS ON = 0.700Ω The Fairchild Corporation has designed a series of SECOND GENERATION hardened power MOSFETs of both NChannel and P-Channel enhancement types with ratings


    Original     		PDF JANSR2N7278 FRL234R4 1000K

    1E14

    Abstract: 2E12 FRL234R4 JANSR2N7278
    Text: JANSR2N7278 Formerly FRL234R4 4A, 250V, 0.700 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Features Description • 4A, 250V, rDS ON = 0.700Ω The Intersil Corporation has designed a series of SECOND GENERATION hardened power MOSFETs of both N-Channel and P-Channel enhancement types with ratings from


    Original     		PDF JANSR2N7278 FRL234R4 1000K 1E14 2E12 FRL234R4 JANSR2N7278

    S215

    Abstract: S216R S215E-SP
    Text: Keylock Switches Specifications: Contact rating Maximum contact resistance Minimum insulation resistance Dielectric strength Lock Tumbler mechanism Keys Contacts Terminals : : : : : : : : : 4A @ 125V ac, 2A @ 250V ac, 4A @ 28V dc UL/CUL . 10mΩ. 500MΩ (500V dc).


    Original     		PDF S215E-SP S216R S215 S216R S215E-SP

    1E14

    Abstract: 2E12 FSL234R4 JANSR2N7397
    Text: JANSR2N7397 Formerly FSL234R4 4A, 250V, 0.610 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Features Description • 4A, 250V, rDS ON = 0.610Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event


    Original     		PDF JANSR2N7397 FSL234R4 1E14 2E12 FSL234R4 JANSR2N7397

    1E14

    Abstract: 2E12 FSL234D FSL234D1 FSL234D3 FSL234R FSL234R1 FSL234R3
    Text: FSL234D, FSL234R 4A, 250V, 0.610 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 4A, 250V, rDS ON = 0.610Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event


    Original     		PDF FSL234D, FSL234R 1E14 2E12 FSL234D FSL234D1 FSL234D3 FSL234R FSL234R1 FSL234R3

    Fuse 250V 4A

    Abstract: OMF 125 4A 4A 250V SURFACE MOUNT FUSE omf 63 34030017 2013x
    Text: OMF/OMK 250V Quick-acting Surface Mount Fuse and Fuseholder IEC 127-4/2; EN 60127-4/2 UL 248-14 formerly 198G CSA C22.2 No. 248.14 (formerly 59.2M) Approvals: UL recognition CSA certification VDE registration 250mA-4A File #E41599 250mA-4A File #LR51172


    Original     		PDF 250mA-4A E41599 LR51172 250mA-4A* 250mA-2 250mA Fuse 250V 4A OMF 125 4A 4A 250V SURFACE MOUNT FUSE omf 63 34030017 2013x

    JS-TK-6657HR1S-08

    Abstract: No abstract text available
    Text: 1 2 3 4 5 6 7 8 9 A A SPECIFICATIONS Material: Rating: B Nylon UL94V-2, Natural UL 250V 5A, AC/DC CSA 250V 4A, AC/DC TUV 250V 7A AC/DC B C C D D E E Series JS-TK Pluggable Connector F Type 6657HR1S PCI Wiremount Connector Positions 08 08=8 Positions RoHS compliant


    Original     		PDF UL94V-2, 6657HR1S JS-TK-6657HR1S-08 JS-TK-6657HR1S-08

    IR-021

    Abstract: ir041 IR-061 2200 uf 250v 0-50mA IR-041 250V4A
    Text: New Page 1 Page 1 of 4 IR-*0 C/D -*TYPE : UL,CSA,TÜV,SEMKO approved. Rated Voltage Rated Current (AC,DC) Model IR-021(2)2-S(H) LeakageCurrent (250V AC) 0.35mA max. 250V 2A IR-021(2)3-S(H) 0.50mA max. IR-041(2)2-S(H) 0.35mA max. 250V 4A IR-041(2)3-S(H) 0.50mA max.


    Original     		PDF IR-021 IR-041 IR-061 2200pF 3300ptor 3300pF ir041 2200 uf 250v 0-50mA 250V4A

    Untitled

    Abstract: No abstract text available
    Text: ES M A « FSL234D, FSL234R 4A, 250V, 0.610 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description • 4A ,250V ,rDS ON = 0.610n The Discrete Products Operation of Harris Semiconductor has developed a series o1 Radiation Hardened MOSFETs


    OCR Scan     		PDF FSL234D, FSL234R MIL-STD-750, MIL-S-19500, 500ms;

    Untitled

    Abstract: No abstract text available
    Text: JANSR2N7397 SS MAR Formerly FSL234R4 4A, 250V, 0.610 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Features Description • 4A, 250V, rDS ON = 0.61 Oil The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs


    OCR Scan     		PDF FSL234R4 JANSR2N7397 MIL-STD-750, MIL-S-19500, 500ms;

    Untitled

    Abstract: No abstract text available
    Text: FSL234D, FSL234R 4A, 250V, 0.610 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description • 4A, 250V, ros ON = 0-610£2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space


    OCR Scan     		PDF FSL234D, FSL234R 36MeV/mg/cm2 100Kolder) 254mm)

    Untitled

    Abstract: No abstract text available
    Text: 33 JANSR2N7278 Formerly FRL234R4 4A, 250V, 0.700 Ohm, Rad Hard, N-Channel Power MOSFET Features Description • 4A, 250V, rDS ON = 0.700Q The Harris Semiconductor Sector has designed a series of SECOND GENERATION hardened power MOSFETs of both N-Channel and P-Channel enhancement types with ratings


    OCR Scan     		PDF FRL234R4 JANSR2N7278 1000K MIL-STD-750, MIL-S-19500, 500ms;

    switch AU 101

    Abstract: digitast
    Text: TO K O SW ITCHES A vailable only in Japan Switch applications (Available only in Japan) Class 76 X-f 7 Application Type Audio equip. Comment Video equip. DC b- For power switches NE18-2U NE18-2a Push AC 250V 6A MSA AC 250V 4A For key board switches MD Disc


    OCR Scan     		PDF NE18-2U NE18-2a 250mA 100mQ 50mi2 100miJ RTE02 RTE10 100mA switch AU 101 digitast