Untitled
Abstract: No abstract text available
Text: SIYU R GBL06 塑封硅整流桥堆 Single-phase Silicon Bridge Rectifier 反向电压 600V 正向电流 4.0A Reverse Voltage 600 V Forward Current 4A 特征 Features GBL •低的反向漏电流 3.5 ± 0.2 + ~ ~ 2.5 ± 0.2 1.5 ± 0.2 1.0 ± 0.1 13.5 ± 0.5
|
Original
|
PDF
|
GBL06
|
BZX85C12V
Abstract: TOSHIBA 2N3055 bta41-600b application BTA41-600B firing circuit TAB 429 H toshiba BZX85C20V SCR tyn612 pin configuration picaxe TYN612 specification 2SA1085E
Text: SEMICONDUCTORS DISCRETE DEVICES Cathode Anode DO-15 DO-201AD 6.8 x 3.5mm 9.5 x 5.3mm Anode Cathode TO-220AC Fast recovery diodes page 427 Schottky power diodes page 428 Isolated tab triacs page 430 Anode 1 Gate Anode 2 Bridge rectifiers Current regulating diodes
|
Original
|
PDF
|
DO-15
DO-201AD
O-220AC
T0202-3
STGP3NB60HD*
STGP7NB60HD*
STGP3NB60HD
STGP7NB60HD
BZX85C12V
TOSHIBA 2N3055
bta41-600b application
BTA41-600B firing circuit
TAB 429 H toshiba
BZX85C20V
SCR tyn612 pin configuration
picaxe
TYN612 specification
2SA1085E
|
4A01-4A10
Abstract: 4A01
Text: BL GALAXY ELECTRICAL 4A01-4A10 VOLTAGE RANGE: 100 - 1000 V CURRENT: 4.0 A PLASTIC SILICON RECTIFIER FEATURES DO - 27 Low cost Diffused junction Low leakage Low forward voltage drop High current capability Easily cleaned with Freon,Isopropanol and similar solvents
|
Original
|
PDF
|
4A01---4A10
DO-27
STD-202
300us
4A01-4A10
4A01
|
CSD04060
Abstract: CSD04060A SCHOTTKY 4A 600V CSD04060B CSD04060E
Text: CSD04060 Silicon Carbide Schottky Diode ZERO RECOVERY RECTIFIER VRRM=600V IF=4A _ Features Benefits • 600 Volt Schottky Rectifier • Replace Bipolar with Unipolar Rectifiers • Zero Reverse Recovery • Essentially No Switching Losses • Zero Forward Recovery
|
Original
|
PDF
|
CSD04060
CSD04060A
CSD04060B
CSD04060E
CSD04060,
CSD04060
CSD04060A
SCHOTTKY 4A 600V
CSD04060E
|
Untitled
Abstract: No abstract text available
Text: CSD04060–Silicon Carbide Schottky Diode VRRM = 600V Zero Recovery Rectifier IF = 4A Qc = 9 Features • • • • • • • Package 600 Volt Schottky Rectifier Zero Reverse Recovery Zero Forward Recovery High Frequency Operation Temperature Independent Switching Behavior
|
Original
|
PDF
|
CSD04060â
O-252-2
O-220-2
CSD04060
|
Untitled
Abstract: No abstract text available
Text: FFP04H60S tm Features 4A, 600V Hyperfast 2 Rectifier • High Speed Switching, rrt < 45ns @ IF = 4A The FFP04H60S is a hyperfast 2 rectifier and silicon nitride passivated ion-implanted epitaxial planar construction. • High Reverse Voltage and High Reliability
|
Original
|
PDF
|
FFP04H60S
FFP04H60S
|
FFP04H60S
Abstract: FFP04H60STU TO220-2L
Text: FFP04H60S tm Features 4A, 600V Hyperfast 2 Rectifier • High Speed Switching, trr < 45ns @ IF = 4A The FFP04H60S is a hyperfast 2 rectifier and silicon nitride passivated ion-implanted epitaxial planar construction. • High Reverse Voltage and High Reliability
|
Original
|
PDF
|
FFP04H60S
FFP04H60S
FFP04H60STU
TO220-2L
|
Untitled
Abstract: No abstract text available
Text: World’s First Silicon Carbide Centertap Rectifier SSR04C60CT Series Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: 562 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com DESIGNER’S DATA SHEET 4A / 600V
|
Original
|
PDF
|
SSR04C60CT
SSR04C
SSR04C50CTS
SSR04C60CTS
SSR04C50CT/39
SSR04C60CT/39
|
4A,600V
Abstract: SSR04C60CT SMD.5 silicon carbide 600V Silicon carbide Schottky
Text: World’s First Silicon Carbide Centertap Rectifier SSR04C60CT Series Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: 562 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com DESIGNER’S DATA SHEET 4A / 600V
|
Original
|
PDF
|
SSR04C60CT
SSR04C
SSR04C50CTS
SSR04C60CTS
SSR04C50CT/39
SSR04C60CT/39
4A,600V
SMD.5
silicon carbide
600V Silicon carbide Schottky
|
silicon carbide
Abstract: No abstract text available
Text: World’s First Silicon Carbide Centertap Rectifier SSR04C60CT Series Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: 562 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com DESIGNER’S DATA SHEET 4A / 600V
|
Original
|
PDF
|
SSR04C60CT
SSR04C
175oC)
SSR04C50CTS
SSR04C60CTS
SSR04C50CT/39
SSR04C60CT/39
silicon carbide
|
FFPF04H60S
Abstract: FFPF04H60STU
Text: FFPF04H60S tm Hyperfast 2 Rectifier Features 4A, 600V Hyperfast 2 Rectifier The FFPF04H60S is a hyperfast 2 rectifier and silicon nitride passivated ion-implanted epitaxial planar construction. • High Speed Switching, trr < 45ns • High Reverse Voltage and High Reliability
|
Original
|
PDF
|
FFPF04H60S
FFPF04H60S
FFPF04H60STU
|
Untitled
Abstract: No abstract text available
Text: FFPF04H60S tm Hyperfast 2 Rectifier Features 4A, 600V Hyperfast 2 Rectifier • High Speed Switching, rrt < 45ns • High Reverse Voltage and High Reliability • Low Forward Voltage, VF < 2.1V @ 4A • RoHS compliant The FFPF04H60S is a hyperfast 2 rectifier and silicon nitride
|
Original
|
PDF
|
FFPF04H60S
FFPF04H60S
|
silicon carbide
Abstract: RS0022
Text: World’s First Silicon Carbide Centertap Rectifier SSR04C60CT Series Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: 562 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com DESIGNER’S DATA SHEET 4A / 600V
|
Original
|
PDF
|
SSR04C60CT
SSR04C
50CT/39
SSR04C60CT/39
RS0022
SSR04C50CTS
SSR04C60CTS
E-030371
SSR04C50CT/39
SSR04C60CT/39
silicon carbide
|
FFP04S60S
Abstract: FFP04S60STU F04S
Text: STEALTH II Rectifier FFP04S60S tm Features 4A, 600V STEALTHTM II Rectifier • High Speed Switching, trr < 25ns @ IF = 4A The FFP04S60S is STEALTHTM II rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.
|
Original
|
PDF
|
FFP04S60S
FFP04S60S
FFP04S60STU
F04S
|
|
|
Untitled
Abstract: No abstract text available
Text: STEALTH II Rectifier FFP04S60S tm Features 4A, 600V STEALTHTM II Rectifier • High Speed Switching, rrt < 25ns @ IF = 4A • High Reverse Voltage and High Reliability The FFP04S60S is STEALTHTM II rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.
|
Original
|
PDF
|
FFP04S60S
FFP04S60S
|
Untitled
Abstract: No abstract text available
Text: STEALTH II Rectifier FFPF04S60S tm Features 4A, 600V STEALTHTM II Rectifier • High Speed Switching, rrt < 25ns @ IF = 4A • High Reverse Voltage and High Reliability The FFPF04S60S is STEALTHTM II rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.
|
Original
|
PDF
|
FFPF04S60S
FFPF04S60S
|
C3D04060E
Abstract: CREE C3D04060
Text: C3D04060E–Silicon Carbide Schottky Diode Z-REC RECTIFIER VRRM = 600 V IF =4A TC < 160 °C Qc Features • • • • • • • • = 8.5 nC Package 600-Volt Schottky Rectifier Optimized for PFC Boost Diode Application Zero Reverse Recovery Current
|
Original
|
PDF
|
C3D04060E
600-Volt
O-252-2
C3D04060E
C3D04060
CREE C3D04060
|
BYT85
Abstract: No abstract text available
Text: BYT85 Vishay Telefunken Super Fast Recovery Silicon Power Rectifier Features D D D D D Multiple diffusion High voltage High current Ultra fast forward recovery time Ultra fast reverse recovery time 14282 Applications Fast rectifiers in S.M.P.S, freewheeling and snubber
|
Original
|
PDF
|
BYT85
BYT85
D-74025
27-Sep-00
|
BYT85
Abstract: No abstract text available
Text: BYT85 Vishay Telefunken Ultra Fast Recovery Silicon Power Rectifier Features D D D D D Multiple diffusion High voltage High current Ultra fast forward recovery time Ultra fast reverse recovery time 14282 Applications Fast rectifiers in S.M.P.S, freewheeling and snubber
|
Original
|
PDF
|
BYT85
BYT85
D-74025
24-Jun-98
|
Untitled
Abstract: No abstract text available
Text: GBS 4A . GBS 4M Silicon-Bridge Rectifiers Silizium-Brückengleichrichter Nominal current – Nennstrom 4A Repetitive peak reverse voltage Periodische Spitzensperrspannung Plastic case Kunststoffgehäuse 50…1000 V 19 x 4.8 x 10 [mm] Weight approx. – Gewicht ca.
|
Original
|
PDF
|
UL94V-0
100LC
|
9478
Abstract: No abstract text available
Text: BYT85 Vishay Semiconductors Super Fast Recovery Silicon Power Rectifier Features D D D D D Multiple diffusion High voltage High current Ultra fast forward recovery time Ultra fast reverse recovery time 14282 Applications Fast rectifiers in S.M.P.S, freewheeling and snubber
|
Original
|
PDF
|
BYT85
BYT85
D-74025
27-Sep-00
9478
|
ecg5322
Abstract: ECG5326 ECG5344 ECG5324 ECG5313 ECG5342 ECG168 z43 diode ECG5330 ECG5328
Text: PH ILIPS E C G IN C B r id g e S4E D bbsa^sa 000720Û tsb h ec g R e c t i f i e r s silicon Single-Phase Pe ak Reverse Voltage (P R V Volts) |Q, A ve rage Rectified Forw ard Current (Am ps) 1A 100 1.5 A 2A 4A ECG166 200 ECG167 400 600 ECG5332 800 ECG5309
|
OCR Scan
|
PDF
|
bb531Sa
ECG166
ECG167
ECG5309
ECG5318
ECG5304
ECG168
ECG5332
ECG5305
ECG169
ecg5322
ECG5326
ECG5344
ECG5324
ECG5313
ECG5342
ECG168
z43 diode
ECG5330
ECG5328
|
kbu805
Abstract: No abstract text available
Text: SILICON BRIDGE RECTIFIERS TYPE NO. AVERAGE CURRENT IO AV @ TA (A) (C) VOLTAGE PIV (V) 6 AMP TO 10AM PS SU RG E IFSM (A PK) VFM @ 25C (V) IR @ PRV (uA) KBU6 Series 6 AMP Plastic Case KBU Package KBU601 KBU602 KBU603 KBU604 KBU605 KBU606 KBU607 SB8 Series
|
OCR Scan
|
PDF
|
KBU601
KBU602
KBU603
KBU604
KBU605
KBU606
KBU607
SB801
SB802
SB803
kbu805
|
iskra diode
Abstract: BY144 BY142 si diode 1N4007 BY143 Diode IN 5404 1N4007 iskra diode 1N 4001 Iskra 11 250 251 4001 1n diode
Text: ISKRA ELECTRONICS INC 5SE D MÔÔ3477 ODOOfiTE 3 T- oi-iS' “r - ot - ¿ 3 Silicijeve usmerjalne diode 1 A f \ ' | I8 9 0 0 0 | Silicon rectifier diodes 1 À \ J Ursm Urrm JpAV •f s m Tip/Type 10 ms V 10 ms (V) 1N4001 e 50 1N4002 a i too 1N4003 ’ .200
|
OCR Scan
|
PDF
|
DO-41
DO-27
1N4001
1N4002
1N4003
1N4004
1N4005
1N4007
1N5401Â
1N5406Â
iskra diode
BY144
BY142
si diode 1N4007
BY143
Diode IN 5404
1N4007 iskra
diode 1N 4001
Iskra 11 250 251
4001 1n diode
|
