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    4A600V MOSFET Search Results

    4A600V MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCK424G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK425G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK423G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK422G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation

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    OB2263

    Abstract: LD7535 SG5848 H4N60 OB226 ob2263 battery charger circuit schematic Chip-Rail 58khz schematic 7d471 sg5701
    Text: HI-SINCERITY MICROELECTRONICS CORP. H6849 Spec. No. : IC200804 Issued Date : 2008.09.19 Revised Date : Page No. : 1/13 Series Novel Low Cost Green-Power PWM Controller Features z z z z z z z z z Low Cost, PWM&PFM&CRM Low Start-up Current about 10 A Low Operating Current (about 2mA)


    Original
    H6849 IC200804 OT-23-6LSOP-8 SG5701 SG5848 LD7535 OB2263/2263 Applicati06 FR107 FR104 OB2263 LD7535 SG5848 H4N60 OB226 ob2263 battery charger circuit schematic Chip-Rail 58khz schematic 7d471 sg5701 PDF