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    Untitled

    Abstract: No abstract text available
    Text: «HYUNDAI HYM564404A K-Series Unbuffered 4M x 64-bit CMOS DRAM MODULE with EXTENDED DATA OUT _ DESCRIPTION The HYM564404A is a 4M x 64-bit EDO mode CMOS DRAM module consisting of sixteen HY5116404A in 24/26 pin SOJ or TSOP-II and one 2048 bit EEPROM on a 168 pin glass-epoxy printed circuit board. 0.1 nF and 0.01


    OCR Scan     		PDF HYM564404A 64-bit HY5116404A HYM564404AKG/ATKG/ASLKG/ASLTKG DQ0-DQ63) 4b75oaa 1CE16-10-APR95

    Untitled

    Abstract: No abstract text available
    Text: HYUNDAI HY5117410 Series SEMICONDUCTOR 4M X 4-bit CMOS DRAM with Write-Per-Bit DESCRIPTION The HY5117410 is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit with function of Write-Per-Bit. The HY5117410 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced


    OCR Scan     		PDF HY5117410 1AD06-10-APR93 HY5117410JC HY5117410UC HY5117410TC HY5117410LTC

    Untitled

    Abstract: No abstract text available
    Text: •HY U ND A I HYM572A414A F-Series Unbuffered 4M x 72-bit CMOS DRAM MODULE _ with EXTENDED DATA OUT DESCRIPTION T ie HYM572A414A is a 4M x 72-bit EDO mode CMOS DRAM module consisting of eighteen HY5117804B in 28/28 SOJ or TSOP-II and one 2048 bit EEPROM on a 168 pin glass-epoxy printed circuit board. 0.1nF and 0.01 ^F


    OCR Scan     		PDF HYM572A414A 72-bit HY5117804B HYM572A414AFG/ATFG/ASLFG/ASLTFG -0004gOQ 4b750flfl D005fl51 1EC07-10-JAN96

    Untitled

    Abstract: No abstract text available
    Text: ♦HY UNDAI HYM532256A Series SEMICONDUCTOR 256K X 32-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM532256A is a 256K x 32-bit Fast page mode CMOS DRAM module consisting of eight HY534256A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22/tF decoupling capacitor is mounted for each DRAM.


    OCR Scan     		PDF HYM532256A 32-bit HY534256A 22/tF HYM532256AM/ALM HYM532256AMG/ALMG 4b75oaa

    Untitled

    Abstract: No abstract text available
    Text: ♦HY UNDAI SEMICONDUCTOR HYM59256A Series 256K X 9-bit CMOS DRAM MODULE DESCRIPTION The HYM59256A is a 256K x 9-bit Fast page mode CMOS DRAM module consisting of two HY534256 in 20/26 pin SOJ and one HY53C256 in 18 pin PLCC on a 30 pin glass-epoxy printed circuit board. 0.2^«F decoupling capacitor


    OCR Scan     		PDF HYM59256A HY534256 HY53C256 HYM59256AM 1BA04-11-M 0-25IMAX.

    hy57v168010a

    Abstract: hy57v168010 HY57V164010 hy57v168010altc HY57V161610 hy57v16801 hy57v161610a MDQ13 M1023 OV9653
    Text: 16Mbit Synchronous DRAM Series 'HYUNDAI HY57V164010- 4Mx4bit Synchronous DRAM HY57V168010- 2Mx8blt Synchronous DRAM HY57V161610- 1Mx16bit Synchronous DRAM DESCRIPTION The HY57V164010, HY57V168010, HY57V161610 are high speed 3.3 Volt synchronous dynamic RAMs


    OCR Scan     		PDF 16Mbit HY57V164010- HY57V168010- HY57V161610- 1Mx16bit HY57V164010, HY57V168010, HY57V161610 512Kbit 1SD10-Q3-NOV96 hy57v168010a hy57v168010 HY57V164010 hy57v168010altc hy57v16801 hy57v161610a MDQ13 M1023 OV9653

    512Kx1+DRAM

    Abstract: No abstract text available
    Text: HY514100B Series •HYUNDAI 4M X 1 -b lt CMOS DRAM PRELIMINARY DESCRIPTION The HY5141OOB is the new generation and fast dynamic RAM organized 4,194,304 x 1-bit. th e HY514100B utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating


    OCR Scan     		PDF HY514100B HY5141OOB 1AC09-00-MAYÃ 4b750fifi 000241b HY514100BJ HY514100BU 512Kx1+DRAM

    Untitled

    Abstract: No abstract text available
    Text: «HYUNDAI HY29F040 Series _512K x 8-bit CMOS 5.0 V-Only, Sector Erase Flash Memory Preliminary DESCRIPTION The HY29F040 is a 4 Megabit, 5.0 Volts only Flash memory device organized as a 512k X 8 bits each. The HY29F040 is offered in an industry standard 32 pin package which is backward compatible to 1 Megabit and also


    OCR Scan     		PDF HY29F040 1FA02-11-MAY

    Untitled

    Abstract: No abstract text available
    Text: HYM540A410 M-Series •HYUNDAI 4M x 40-bit C M O S DRAM MODULE P R ELIM IN A R Y DESCRIPTION The HYM540A410 is a 4M x 40-bit Fast page mode C M O S DRAM module consisting of ten HY5117400 in 24/28 pin SO J or TSOP-II on a 72 pin glass-epoxy printed circuit board. 0.22jiF decoupling capacitor is mounted for


    OCR Scan     		PDF HYM540A410 40-bit HY5117400 22jiF HYM540A41OM/LM/TM/LTM HYM540A41OMG/LMG/TMG/LTMG HYM540410TM/LTM 1CE09-11-MAR94

    Untitled

    Abstract: No abstract text available
    Text: •HYUNDAI H Y 5 2 1 6 2 5 7 256K x S e r ie s 16-bit Video RAM with 2WE Introduction Overview The 4megabit Video RAM is an application specific memory device designed for graphics applications. It comprises a 256k x16 DRAM memory array interfaced to a 256 x16 Serial Access Memory SAM , or register.


    OCR Scan     		PDF 16-bit 16bits 1VC02-00-MAY95 HY5216257 525mil 64pin 4b750flfl 1VC02-00-MAY9S HY5216256GE