GTO thyristor 4500V 4000A
Abstract: FAST SWITCHING THYRISTOR ST GTO thyristor driver 10A fast Gate Turn-off Thyristor GTO thyristor GTO gate drive unit mitsubishi fast thyristor 200A gate control circuits GTO 4.5kv MITSUBISHI GATE TURN-OFF THYRISTOR gto gto Gate Drive circuit
Text: IEEE Industry Applications Society Annual Meeting St. Louis, Missouri, October 12-16, 1998 A NEW GATE COMMUTATED TURN-OFF THYRISTOR AND COMPANION DIODE FOR HIGH POWER APPLICATIONS John F. Donlon*, Eric R. Motto*, M. Yamamoto*, Takahiko Iida* *Powerex, Incorporated, Youngwood, PA 15697 USA
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500V/1500A
FD1500BV-90DA
500V/500A
FD500JV-90DA
GTO thyristor 4500V 4000A
FAST SWITCHING THYRISTOR ST
GTO thyristor driver
10A fast Gate Turn-off Thyristor
GTO thyristor
GTO gate drive unit mitsubishi
fast thyristor 200A gate control circuits
GTO 4.5kv
MITSUBISHI GATE TURN-OFF THYRISTOR gto
gto Gate Drive circuit
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IRGC25B120KB
Abstract: 1kA IGBT
Text: PD - 93868 IRGC25B120KB Die in Wafer Form Features • • • • • 1200V IC nom =25A VCE(on) typ.=2.28V @ IC(nom) @ 25°C Motor Control IGBT Short Circuit Rated 150mm Wafer C GEN5 Non Punch Through (NPT) Technology Low VCE(on) 10µs Short Circuit Capability
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IRGC25B120KB
150mm
Thresh57]
IRGC25B120KB
1kA IGBT
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IRGC100B120KB
Abstract: 4kA IGBT
Text: PD - 93874 IRGC100B120KB Die in Wafer Form Features • • • • • 1200V IC nom = 100A VCE(on) typ.= 2.2V @ IC(nom) @ 25°C Motor Control IGBT Short Circuit Rated 150mm Wafer C GEN5 Non Punch Through (NPT) Technology Low VCE(on) 10µs Short Circuit Capability
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IRGC100B120KB
150mm
IRGC100B120KB
4kA IGBT
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IRGC25B120UB
Abstract: 1kA IGBT IGBT Transistor 1200V, 25A induction welding
Text: PD - 93867 IRGC25B120UB Die in Wafer Form Features • • • • • G Benefits • • • • 1200V IC nom =25A VCE(on) typ.=3.37V @ IC(nom) @ 25°C UltraFast IGBT Short Circuit Rated 150mm Wafer C GEN5 Non Punch Through (NPT) Technology UltraFast 10µ s Short Circuit Capability
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IRGC25B120UB
150mm
20KHz
IRGC25B120UB
1kA IGBT
IGBT Transistor 1200V, 25A
induction welding
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IRGPS60B120KD
Abstract: IRGC49B120KB
Text: PD - 94353 IRGC49B120KB Die in Wafer Form Features • • • • • G Benefits • • • • 1200V IC nom = 50A VCE(on) typ.=2.33V @ IC(nom) @ 25°C Motor Control IGBT Short Circuit Rated 150mm Wafer C GEN5 Non Punch Through (NPT) Technology Low VCE(on)
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IRGC49B120KB
150mm
IRGPS60B120KD
Saturatio47
IRGPS60B120KD
IRGC49B120KB
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SK 5207
Abstract: No abstract text available
Text: PD - 94562 IRGC16B120KB Die in Wafer Form Features 1200V IC nom =15A VCE(on) typ.=2.55V@ IC(nom) @ 25°C Motor Control IGBT Short Circuit Rated 150mm Wafer C GEN5 Non Punch Through (NPT) Technology Low VCE(on) 10µs Short Circuit Capability
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IRGC16B120KB
150mm
GB15RF120K
SK 5207
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IRGC100B120UB
Abstract: 1kA IGBT
Text: PD - 93873 IRGC100B120UB Die in Wafer Form Features • • • • • 1200V IC nom = 100A VCE(on) typ.= 3.1V @ IC(nom) @ 25°C UltraFast IGBT Short Circuit Rated 150mm Wafer C GEN5 Non Punch Through (NPT) Technology Low VCE(on) 10µs Short Circuit Capability
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IRGC100B120UB
150mm
IRGC100B120UB
1kA IGBT
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IRGC20B60KB
Abstract: No abstract text available
Text: PD - 94375 IRGC20B60KB Die in Wafer Form Features • • • • • G Benefits • • • • 600V IC nom = 20A VCE(on) typ.=1.82V @ IC(nom) @ 25°C Motor Control IGBT Short Circuit Rated 150mm Wafer C GEN5 Non Punch Through (NPT) Technology Low VCE(on)
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IRGC20B60KB
150mm
IRGC20B60KB
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1kA IGBT
Abstract: IRGC30B60KB
Text: PD - 94376 IRGC30B60KB Die in Wafer Form Features • • • • • G Benefits • • • • 600V IC nom = 30A VCE(on) typ.=1.95V @ IC(nom) @ 25°C Motor Control IGBT Short Circuit Rated 150mm Wafer C GEN5 Non Punch Through (NPT) Technology Low VCE(on)
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IRGC30B60KB
150mm
1kA IGBT
IRGC30B60KB
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IRGC50B120UB
Abstract: No abstract text available
Text: PD - 93869 IRGC50B120UB Die in Wafer Form Features • • • • • G Benefits • • • • 1200V IC nom =50A VCE(on) typ.=3.15V @ IC(nom) @ 25°C UltraFast IGBT Short Circuit Rated 150mm Wafer C GEN5 Non Punch Through (NPT) Technology UltraFast 10µs Short Circuit Capability
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IRGC50B120UB
150mm
20KHz
IRGC50B120UB
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IRGC50B120KB
Abstract: No abstract text available
Text: PD - 93870 IRGC50B120KB Die in Wafer Form Features • • • • • 1200V IC nom = 50A VCE(on) typ.=2.15V @ IC(nom) @ 25°C Motor Control IGBT Short Circuit Rated 150mm Wafer C GEN5 Non Punch Through (NPT) Technology Low VCE(on) 10µs Short Circuit Capability
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IRGC50B120KB
150mm
IRGC50B120KB
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IRGC75B120KB
Abstract: 0443 IC HA-1370S
Text: PD - 93872 IRGC75B120KB Die in Wafer Form Features • • • • • 1200V IC nom = 75A VCE(on) typ.= 2.1 V @ IC(nom) @ 25°C Motor Control IGBT Short Circuit Rated 150mm Wafer C GEN5 Non Punch Through (NPT) Technology Low VCE(on) 10µs Short Circuit Capability
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IRGC75B120KB
150mm
IRGC75B120KB
0443 IC
HA-1370S
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Untitled
Abstract: No abstract text available
Text: PD - 94560 IRGC8B60KB Die in Wafer Form Features 600V IC nom = 8.0A VCE(on) typ.=1.8V @ IC(nom) @ 25°C Motor Control IGBT Short Circuit Rated 150mm Wafer C GEN5 Non Punch Through (NPT) Technology Low VCE(on) 10µs Short Circuit Capability Square RBSOA
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IRGC8B60KB
150mm
IRGB8B60K
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PDF
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1kA IGBT
Abstract: IRGC15B120KB
Text: PD - 93866 IRGC15B120KB Die in Wafer Form Features • • • • • 1200V IC nom =15A VCE(on) typ.=2.46V @ IC(nom) @ 25°C Motor Control IGBT Short Circuit Rated 150mm Wafer C GEN5 Non Punch Through (NPT) Technology Low V CE(on) 10µ s Short Circuit Capability
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IRGC15B120KB
150mm
1kA IGBT
IRGC15B120KB
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IRGC75B120UB
Abstract: No abstract text available
Text: PD - 93871 IRGC75B120UB Die in Wafer Form Features • • • • • G Benefits • • • • 1200V IC nom =75A VCE(on) typ.= 3.1V @ IC(nom) @ 25°C UltraFast IGBT Short Circuit Rated 150mm Wafer C GEN5 Non Punch Through (NPT) Technology UltraFast 10µ s Short Circuit Capability
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IRGC75B120UB
150mm
20KHz
IRGC75B120UB
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IRGC50B60KB
Abstract: 4kA IGBT
Text: PD - 94377 IRGC50B60KB Die in Wafer Form Features • • • • • G Benefits • • • • 600V IC nom =50A VCE(on) typ.=2.0V @ IC(nom) @ 25°C Motor Control IGBT Short Circuit Rated 150mm Wafer C GEN5 Non Punch Through (NPT) Technology Low VCE(on) 10µs Short Circuit Capability
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IRGC50B60KB
150mm
IRGC50B60KB
4kA IGBT
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IRGC10B60KB
Abstract: IRGS10B60KD
Text: PD - 94409 IRGC10B60KB Die in Wafer Form Features • • • • • G Benefits • • • • 600V IC nom = 10A VCE(on) typ.=1.8V @ IC(nom) @ 25°C Motor Control IGBT Short Circuit Rated 150mm Wafer C GEN5 Non Punch Through (NPT) Technology Low VCE(on)
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IRGC10B60KB
150mm
IRGS10B60KD
IRGC10B60KB
IRGS10B60KD
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IRGC5B60KB
Abstract: No abstract text available
Text: PD - 94408 IRGC5B60KB Die in Wafer Form Features • • • • • G Benefits • • • • 600V IC nom = 5A VCE(on) typ.=1.8V @ IC(nom) @ 25°C Motor Control IGBT Short Circuit Rated 150mm Wafer C GEN5 Non Punch Through (NPT) Technology Low VCE(on) 10µs Short Circuit Capability
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IRGC5B60KB
150mm
IRGS5B60KD
IRGC5B60KB
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IRGC49B120UB
Abstract: IRGPS40B120UD
Text: PD - 94352 IRGC49B120UB Die in Wafer Form Features • • • • • G Benefits • • • • 1200V IC nom = 50A VCE(on) typ.=3.39V @ IC(nom) @ 25°C UltraFast IGBT Short Circuit Rated 150mm Wafer C GEN5 Non Punch Through (NPT) Technology Low VCE(on) 10µs Short Circuit Capability
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IRGC49B120UB
150mm
20KHz
IRGPS40B120UD
IRGC49B120UB
IRGPS40B120UD
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FF 150 R 1200 kf igbt
Abstract: No abstract text available
Text: European PowerSemiconductor and Electronics Company Marketing Information FF 800 R 12 KF4 55,2 11,85 M8 130 114 31,5 C2 E1 C1 E2 E2 E1 C1 G1 M4 28 7 2,5 deep 40 53 E1 C2 16 18 G2 44 2,5 deep 57 C2 E1 C2 G1 G2 C1 E2 C1 E2 20.03.1998 FF 800 R 12 KF 4 Höchstzulässige Werte / Maximum rated values
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IGBT FZ 1600 r12 kf4
Abstract: FZ800R12KF4 4kA IGBT IGBT module FZ 600 R12 G1 TRANSISTOR IGBT FZ 600 R12
Text: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information FZ 800 R 12 KF 4 61,5 18 M8 screwing depth max. 8 130 114 31,5 C C E E E G C 16,5 7 M4 28 2,5 18,5 external connection to be done C C C G E E E external connection to be
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A15/97
FZ800R12KF4
IGBT FZ 1600 r12 kf4
FZ800R12KF4
4kA IGBT
IGBT module FZ 600 R12
G1 TRANSISTOR
IGBT FZ 600 R12
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FZ800R12KF4
Abstract: IGBT FZ 1200 r12 IGBT module FZ 600 R12 IGBT FZ 600 R12 G1 TRANSISTOR 800R12KF4 IGBT FZ 1600 r12 kf4 IGBT FZ 200
Text: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information FZ 800 R 12 KF 4 61,5 18 M8 screwing depth max. 8 130 114 31,5 C C E E E G C 16,5 7 M4 28 2,5 18,5 external connection to be done C C C G E E E external connection to be
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A15/97
FZ800R12KF4
FZ800R12KF4
IGBT FZ 1200 r12
IGBT module FZ 600 R12
IGBT FZ 600 R12
G1 TRANSISTOR
800R12KF4
IGBT FZ 1600 r12 kf4
IGBT FZ 200
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IC1500
Abstract: No abstract text available
Text: European PowerSemiconductor and Electronics Company Marketing Information FF 800 R 12 KF4 55,2 11,85 M8 130 114 31,5 C2 E1 C1 E2 E2 E1 C1 G1 M4 28 7 2,5 deep 40 53 E1 C2 16 18 G2 44 2,5 deep 57 C2 E1 C2 G1 G2 C1 E2 C1 E2 20.03.1998 FF 800 R 12 KF 4 Höchstzulässige Werte / Maximum rated values
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FZ800R12KF4
Abstract: 800A DC diode IGBT FZ 1600 r12 kf4 fZ80
Text: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information FZ 800 R 12 KF 4 61,5 18 M8 screwing depth max. 8 130 114 31,5 C C E E E G C 16,5 7 M4 28 2,5 18,5 external connection to be done C C C G E E E external connection to be
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A15/97
FZ800R12KF4
800A DC diode
IGBT FZ 1600 r12 kf4
fZ80
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