CY62177EV30LL-55BAXI
Abstract: CY62177EV30LL-55ZXI CY62177EV30LL
Text: CY62177EV30 MoBL 32 Mbit 2M x 16 / 4M x 8 Static RAM Features Functional Description • TSOP I Configurable as 2M x 16 or as 4M x 8 SRAM ■ Very High Speed ❐ 55 ns ■ Wide Voltage Range ❐ 2.2V to 3.7V ■ Ultra Low Standby Power ❐ Typical Standby Current: 3 A
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CY62177EV30
CY62177EV30LL-55BAXI
CY62177EV30LL-55ZXI
CY62177EV30LL
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CY62177EV30LL
Abstract: CY62177EV30LL-55ZXI 220v to 3.7v power supply circuit CY62177EV30 CY62177EV30LL55ZXI
Text: CY62177EV30 MoBL 32 Mbit 2M x 16 / 4M x 8 Static RAM Features Functional Description • TSOP I Configurable as 2M x 16 or as 4M x 8 SRAM ■ Very High Speed ❐ 55 ns ■ Wide Voltage Range ❐ 2.2V to 3.7V ■ Ultra Low Standby Power ❐ Typical Standby Current: 3 A
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CY62177EV30
48-Ball
CY62177EV30LL
CY62177EV30LL-55ZXI
220v to 3.7v power supply circuit
CY62177EV30LL55ZXI
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TMS320C6000
Abstract: TMS320C6201 TMS320C6701 WED9LC6416V
Text: WED9LC6416V White Electronic Designs 128Kx32 SSRAM/4Mx32 SDRAM EXTERNAL MEMORY SOLUTION FOR TEXAS INSTRUMENTS TMS320C6000 DSP FEATURES DESCRIPTION n The WED9LC6416VxxBC is a 3.3V, 128K x 32 Synchronous Pipeline SRAM and a 4M x 32 Synchronous DRAM array constructed with one 128K x 32 SSRAM and two 4M x 16
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WED9LC6416V
128Kx32
SSRAM/4Mx32
TMS320C6000
WED9LC6416VxxBC
TMS320C6201
TMS320C6701
TMS320C6201
TMS320C6701
WED9LC6416V
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SDRAM
Abstract: 128Mx8 DDR dRAM 512M 8M X 16 SDRAM 8M X 16 X 4 SDRAM SDRAM 128M 8M x 16 512M ISSD16M16STC TSOP SDRAM ISAS512K16LTD
Text: MPD Parts Directory March 2002 Stack Technology Stack Memory Configuration Stack Part Number TSOP Memory Configuration SRAM (8M) 512K x 16 ISAS512K16LTD (4M) 256K x 16 EDO DRAM (128M) 16M x 8 ISED16M8LTB (64M) 16M x 4 SDRAM SDRAM SDRAM SDRAM SDRAM (512M)
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ISAS512K16LTD
ISED16M8LTB
ISSD128M4STB
ISSD64M8STB
ISSD64M8STC
ISSD32M16STC
ISSD32M16STD
ISSD64M4STB
ISSD32M8STB
ISSD32M8STC
SDRAM
128Mx8
DDR dRAM 512M
8M X 16 SDRAM
8M X 16 X 4 SDRAM
SDRAM 128M 8M x 16
512M
ISSD16M16STC
TSOP SDRAM
ISAS512K16LTD
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MB82DBS04163C
Abstract: MB82DBS04163C-70L
Text: FUJITSU SEMICONDUCTOR DATA SHEET AE2.0E MEMORY Mobile FCRAMTM CMOS 64M Bit 4M word x 16 bit Mobile Phone Application Specific Memory MB82DBS04163C-70L CMOS 4,194,304-WORD x 16 BIT Fast Cycle Random Access Memory with Low Power SRAM Interface Programmable Page Mode & Burst Mode
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MB82DBS04163C-70L
304-WORD
MB82DBS04163C
16-bit
MB82DBS04163C-70L
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transistor marking A19
Abstract: HMS4M16M16G
Text: HANBit HMS4M16M16G HAN SRAM MODULE 8Mbyte 4M x 16-Bit BIT Part No. HMS4M16M16G GENERAL DESCRIPTION The HMS4M16M16G is a high-speed static random access memory (SRAM) module containing 2,097,152 words organized in 4M x16-bit configuration. The module consists of sixteen 1M x 4 SRAMs mounted on a 72pin, double-sided, FR4-printed circuit board.
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HMS4M16M16G
16-Bit)
HMS4M16M16G
x16-bit
72pin,
X16bit
16bit
transistor marking A19
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TLA064
Abstract: S71PL129JC0 S29PL129J S71PL129JA0 S71PL129JB0
Text: S71PL129JC0/S71PL129JB0/S71PL129JA0 Stacked Multi-Chip Product MCP Flash Memory and pSRAM 128 Megabit (8M x 16-bit) CMOS 3.0 Volt-only Simultaneous Operation, Page Mode Flash Memory with 64/32/16 Megabit (4M/2M/1M x 16-bit) Pseudo-Static RAM ADVANCE INFORMATION
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S71PL129JC0/S71PL129JB0/S71PL129JA0
16-bit)
S71PL129Jxx
TLA064
S71PL129JC0
S29PL129J
S71PL129JA0
S71PL129JB0
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Untitled
Abstract: No abstract text available
Text: S71PL129JC0/S71PL129JB0/S71PL129JA0 Stacked Multi-Chip Product MCP Flash Memory and pSRAM 128 Megabit (8M x 16-bit) CMOS 3.0 Volt-only Simultaneous Operation, Page Mode Flash Memory with 64/32/16 Megabit (4M/2M/1M x 16-bit) Pseudo-Static RAM ADVANCE INFORMATION
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S71PL129JC0/S71PL129JB0/S71PL129JA0
16-bit)
S71PL129Jxx
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MCP78
Abstract: Spansion s29pl127j S29PL129J S71PL129JA0 S71PL129JB0 S71PL129JC0 FBGA 9 x 12 package tray PL127J
Text: S71PL129JC0/S71PL129JB0/ S71PL129JA0 Stacked Multi-Chip Product MCP Flash Memory and pSRAM 128 Megabit (8M x 16-bit) CMOS 3.0 Volt-only Simultaneous Operation, Page Mode Flash Memory with 64/32/16 Megabit (4M/2M/1M x 16-bit) Pseudo-Static RAM ADVANCE Distinctive Characteristics
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S71PL129JC0/S71PL129JB0/
S71PL129JA0
16-bit)
S71PL129J
S29PL129J
S71PL129Jxx
MCP78
Spansion s29pl127j
S71PL129JA0
S71PL129JB0
S71PL129JC0
FBGA 9 x 12 package tray
PL127J
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Untitled
Abstract: No abstract text available
Text: S71PL129JC0/S71PL129JB0/S71PL129JA0 Stacked Multi-Chip Product MCP Flash Memory and pSRAM 128 Megabit (8M x 16-bit) CMOS 3.0 Volt-only Simultaneous Operation, Page Mode Flash Memory with 64/32/16 Megabit (4M/2M/1M x 16-bit) Pseudo-Static RAM ADVANCE INFORMATION
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S71PL129JC0/S71PL129JB0/S71PL129JA0
16-bit)
S71PL129Jxx
29this
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S29PL129J
Abstract: S71PL129JA0 S71PL129JB0 S71PL129JC0
Text: S71PL129JC0/S71PL129JB0/S71PL129JA0 Stacked Multi-Chip Product MCP Flash Memory and pSRAM 128 Megabit (8M x 16-bit) CMOS 3.0 Volt-only Simultaneous Operation, Page Mode Flash Memory with 64/32/16 Megabit (4M/2M/1M x 16-bit) Pseudo-Static RAM ADVANCE INFORMATION
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S71PL129JC0/S71PL129JB0/S71PL129JA0
16-bit)
S71PL129J
S29PL129J
S71PL129Jxx
S71PL129JA0
S71PL129JB0
S71PL129JC0
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Untitled
Abstract: No abstract text available
Text: S71PL129JC0/S71PL129JB0/ S71PL129JA0 Stacked Multi-Chip Product MCP Flash Memory and pSRAM 128 Megabit (8M x 16-bit) CMOS 3.0 Volt-only Simultaneous Operation, Page Mode Flash Memory with 64/32/16 Megabit (4M/2M/1M x 16-bit) Pseudo-Static RAM ADVANCE Distinctive Characteristics
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S71PL129JC0/S71PL129JB0/
S71PL129JA0
16-bit)
S71PL129J
S29PL129J
S71PL129Jxx
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Untitled
Abstract: No abstract text available
Text: S71PL129JC0/S71PL129JB0/S71PL129JA0 Stacked Multi-Chip Product MCP Flash Memory and pSRAM 128 Megabit (8M x 16-bit) CMOS 3.0 Volt-only Simultaneous Operation, Page Mode Flash Memory with 64/32/16 Megabit (4M/2M/1M x 16-bit) Pseudo-Static RAM ADVANCE INFORMATION
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S71PL129JC0/S71PL129JB0/S71PL129JA0
16-bit)
S71PL129J
S29PL129J
S71PL129Jxx
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71WS512ND
Abstract: No abstract text available
Text: S71WS512Nx0/S71WS256Nx0 Based MCPs Stacked Multi-chip Product MCP 256/512 Megabit (32M/16M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory with 128/64Megabit (8M/4M x 16-Bit) pSRAM ADVANCE INFORMATION Distinctive Characteristics
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S71WS512Nx0/S71WS256Nx0
32M/16M
128/64Megabit
16-Bit)
54MHz
S71WS
S71WS512/256Nx0
S71WS512N/256N
71WS512ND
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PL127J
Abstract: Pl064j PL032J S71PL064JA0BAW0B S71PL064JA0 S71PL064JA0BAW07 S71PL064JA0BFW07 S71PL064JA0BFW0B mcp79
Text: S71PL064JA0 Stacked Multi-Chip MCP Flash Memory and pSRAM 64 Megabit (4M x 16-bit) CMOS 3.0 Volt-only Simultaneous Operation Flash Memory and 16 Megabit (1M x 16-bit) CMOS Pseudo Static RAM PRELIMINARY DISTINCTIVE CHARACTERISTICS MCP Features Cycling endurance: 1 million cycles per sector
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S71PL064JA0
16-bit)
Am29F
Am29LV
56-Ball
S71PL064JA0
PL127J
Pl064j
PL032J
S71PL064JA0BAW0B
S71PL064JA0BAW07
S71PL064JA0BFW07
S71PL064JA0BFW0B
mcp79
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PWA with 555
Abstract: S71PL064JA0BAW0B Spansion s29pl127j PL032J S71PL064JA0 S71PL064JA0BAW07 S71PL064JA0BFW07
Text: S71PL064JA0 Stacked Multi-Chip MCP Flash Memory and pSRAM 64 Megabit (4M x 16-bit) CMOS 3.0 Volt-only Simultaneous Operation Flash Memory and 16 Megabit (1M x 16-bit) CMOS Pseudo Static RAM ADVANCE DISTINCTIVE CHARACTERISTICS MCP Features Cycling endurance: 1 million cycles per sector
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S71PL064JA0
16-bit)
Am29F
Am29LV
56-Ball
S71PL064JA0
PWA with 555
S71PL064JA0BAW0B
Spansion s29pl127j
PL032J
S71PL064JA0BAW07
S71PL064JA0BFW07
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Untitled
Abstract: No abstract text available
Text: S71PL254/127/064/032J based MCPs Stacked Multi-Chip Product MCP Flash Memory and RAM 256M/128/64/32 Megabit (16/8/4/2M x 16-bit) CMOS 3.0 Volt-only Simultaneous Operation Page Mode Flash Memory and 64/32/16/8/4 Megabit (4M/2M/1M/512K/256K x 16-bit) Static
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S71PL254/127/064/032J
256M/128/64/32
16/8/4/2M
16-bit)
4M/2M/1M/512K/256K
S71PL
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S29PL127J
Abstract: S71PL032J40 S71PL032J80 S71PL032JA0 S71PL064J80 MCP51
Text: S71PL254/127/064/032J based MCPs Stacked Multi-Chip Product MCP Flash Memory and RAM 256M/128/64/32 Megabit (16/8/4/2M x 16-bit) CMOS 3.0 Volt-only Simultaneous Operation Page Mode Flash Memory and 64/32/16/8/4 Megabit (4M/2M/1M/512K/256K x 16-bit) Static
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S71PL254/127/064/032J
256M/128/64/32
16/8/4/2M
16-bit)
4M/2M/1M/512K/256K
S71PL
S29PL127J
S71PL032J40
S71PL032J80
S71PL032JA0
S71PL064J80
MCP51
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fBGA package tray
Abstract: 63 ball fbga thermal resistance spansion 7149A S29PL127J S71PL032J40 S71PL032J80 S71PL032JA0 S71PL064J80 6129A MCP51
Text: S71PL254/127/064/032J based MCPs Stacked Multi-Chip Product MCP Flash Memory and RAM 256M/128/64/32 Megabit (16/8/4/2M x 16-bit) CMOS 3.0 Volt-only Simultaneous Operation Page Mode Flash Memory and 64/32/16/8/4 Megabit (4M/2M/1M/512K/256K x 16-bit) Static
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S71PL254/127/064/032J
256M/128/64/32
16/8/4/2M
16-bit)
4M/2M/1M/512K/256K
S71PL
fBGA package tray
63 ball fbga thermal resistance spansion
7149A
S29PL127J
S71PL032J40
S71PL032J80
S71PL032JA0
S71PL064J80
6129A
MCP51
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Untitled
Abstract: No abstract text available
Text: EN71NS128C0 EN71NS128C0 Base MCP Stacked Multi-Chip Product MCP Flash Memory and RAM 128 Megabit (8M x 16-bit) CMOS 1.8 Volt-only Simultaneous Operation Burst Mode Flash Memory and 64 Megabit (4M x 16-bit) Pseudo Static RAM Distinctive Characteristics MCP Features
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EN71NS128C0
EN71NS128C0
16-bit)
108MHz)
EN71NS
E29NS128
ENPSS64
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S71WS512ND0BFWEP
Abstract: LZ 48H 526 71WS512ND0BFWEP BAX55 S71WS512 71WS512ND
Text: S71WS512Nx0/S71WS256Nx0 Based MCPs Stacked Multi-chip Product MCP 256/512 Megabit (32M/16M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory with 128/64Megabit (8M/4M x 16-Bit) CELLULAR RAM ADVANCE INFORMATION Datasheet Distinctive Characteristics
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S71WS512Nx0/S71WS256Nx0
32M/16M
128/64Megabit
16-Bit)
54MHz
S71WS
S71WS512/256Nx0
S71WS512Nx0/S71WS256Nx0
S71WS512ND0BFWEP
LZ 48H 526
71WS512ND0BFWEP
BAX55
S71WS512
71WS512ND
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EN29NS128
Abstract: E29NS128 PSEUDO SRAM EN71NS PSRAM
Text: EN71NS128C0 EN71NS128C0 Base MCP Stacked Multi-Chip Product MCP Flash Memory and RAM 128 Megabit (8M x 16-bit) CMOS 1.8 Volt-only Simultaneous Operation Burst Mode Flash Memory and 64 Megabit (4M x 16-bit) Pseudo Static RAM Distinctive Characteristics MCP Features
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EN71NS128C0
EN71NS128C0
16-bit)
108MHz)
EN71NS
E29NS128
ENPSS64
EN29NS128
E29NS128
PSEUDO SRAM
PSRAM
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MCP 90
Abstract: bfw 10 transistor transistor marking A21 S71PL064 bfw resistor S29PL127J S71PL032J40 S71PL032J80 S71PL032JA0 S71PL064J80
Text: S71PL254/127/064/032J based MCPs Stacked Multi-Chip Product MCP Flash Memory and SRAM 128/64/32 Megabit (8/4/2 M x 16-bit) CMOS 3.0 Volt-only Simultaneous Operation Page Mode Flash Memory and 64/ 32/16/8/4 Megabit (4M/2M/1M/512K/256K x 16-bit) Static RAM/Pseudo Static RAM
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S71PL254/127/064/032J
16-bit)
4M/2M/1M/512K/256K
S71PL
MCP 90
bfw 10 transistor
transistor marking A21
S71PL064
bfw resistor
S29PL127J
S71PL032J40
S71PL032J80
S71PL032JA0
S71PL064J80
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bga 6x8
Abstract: bga 6x8 Package A64E06161 A64E06161G
Text: A64E06161 1M X 16 Bit Low Voltage Super RAMTM Preliminary Features n Common I/O using three-state output n Support 3 distinct operation modes for reducing standby power : Reduced Memory Size Operation 4M,8M,12M,16M Partial Array Refresh (4M,8M,12M) Deep Power Down Mode
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A64E06161
48-ball
A64E06161
I/O10
I/O11
I/O12
I/O14
I/O13
I/O15
A64E06161G
bga 6x8
bga 6x8 Package
A64E06161G
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