Untitled
Abstract: No abstract text available
Text: FM22LD16 4Mbit F-RAM Memory Features 4Mbit Ferroelectric Nonvolatile RAM • Organized as 256Kx16 Configurable as 512Kx8 Using /UB, /LB 1014 Read/Write Cycles NoDelay Writes Page Mode Operation to 40MHz Advanced High-Reliability Ferroelectric Process
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Original
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FM22LD16
256Kx16
512Kx8
40MHz
256Kx16
C8556953BG1,
FM22LD16-55-BG
C8556953BG1
FM22LD16
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PDF
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FM22LD16-55-BGTR
Abstract: FM22LD16-55-BG
Text: FM22LD16 4Mbit F-RAM Memory Features 4Mbit Ferroelectric Nonvolatile RAM • Organized as 256Kx16 Configurable as 512Kx8 Using /UB, /LB 1014 Read/Write Cycles NoDelay Writes Page Mode Operation to 40MHz Advanced High-Reliability Ferroelectric Process
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Original
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FM22LD16
256Kx16
512Kx8
40MHz
256Kx16
FM22LD16-55-BGTR
FM22LD16-55-BG
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PDF
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FM20L08
Abstract: FM22LD16 FM22LD16-55-BG
Text: Preliminary FM22LD16 4Mbit F-RAM Memory Features 4Mbit Ferroelectric Nonvolatile RAM • Organized as 256Kx16 • Configurable as 512Kx8 Using /UB, /LB • 1014 Read/Write Cycles • NoDelay Writes • Page Mode Operation to 40MHz • Advanced High-Reliability Ferroelectric Process
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Original
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FM22LD16
256Kx16
512Kx8
40MHz
256Kx16
FM22LD16
48-ball
FM22LD16,
C8556953BG1,
FM20L08
FM22LD16-55-BG
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PDF
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FM22L16-55-TG
Abstract: FM20L08 FM22L16 256KX16
Text: Preliminary FM22L16 4Mbit F-RAM Memory Features 4Mbit Ferroelectric Nonvolatile RAM • Organized as 256Kx16 • Configurable as 512Kx8 Using /UB, /LB • 1014 Read/Write Cycles • NoDelay Writes • Page Mode Operation to 40MHz • Advanced High-Reliability Ferroelectric Process
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Original
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FM22L16
256Kx16
512Kx8
40MHz
256Kx16
FM22L16
FM22L16,
FM22L16-55-TG
FM22L16-55-TG
FM20L08
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PDF
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Untitled
Abstract: No abstract text available
Text: FM22L16 4Mbit Asynchronous F-RAM Memory Features 4Mbit Ferroelectric Nonvolatile RAM • Organized as 256Kx16 • Configurable as 512Kx8 Using /UB, /LB • 1014 Read/Write Cycles • NoDelay Writes • Page Mode Operation to 40MHz • Advanced High-Reliability Ferroelectric Process
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Original
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FM22L16
256Kx16
512Kx8
40MHz
256Kx16
FM22L16
rel10
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PDF
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TSOP-II 44 Recommended PCB Footprint
Abstract: FM22L16-55-TG FM22L16
Text: FM22L16 4Mbit Asynchronous F-RAM Memory Features 4Mbit Ferroelectric Nonvolatile RAM • Organized as 256Kx16 • Configurable as 512Kx8 Using /UB, /LB • 1014 Read/Write Cycles • NoDelay Writes • Page Mode Operation to 40MHz • Advanced High-Reliability Ferroelectric Process
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Original
|
FM22L16
256Kx16
512Kx8
40MHz
256Kx16
FM22L16
TSOP-II 44 Recommended PCB Footprint
FM22L16-55-TG
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PDF
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MSL3 RoHS FBGA
Abstract: FM22LD16 FM23MLD16 FM22LD16-55-BG
Text: Pre-Production FM22LD16 4Mbit F-RAM Memory Features 4Mbit Ferroelectric Nonvolatile RAM • Organized as 256Kx16 • Configurable as 512Kx8 Using /UB, /LB • 1014 Read/Write Cycles • NoDelay Writes • Page Mode Operation to 40MHz • Advanced High-Reliability Ferroelectric Process
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Original
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FM22LD16
256Kx16
512Kx8
40MHz
256Kx16
FM22LD16
C8556953BG1,
FM22LD16-55-BG
C8556953BG1
MSL3 RoHS FBGA
FM23MLD16
FM22LD16-55-BG
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PDF
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FM20L08
Abstract: FM22L16 FM22L16-55-TG FM22L16-5 e1 fram
Text: Preliminary FM22L16 4Mbit FRAM Memory Features 4Mbit Ferroelectric Nonvolatile RAM • Organized as 256Kx16 • Configurable as 512Kx8 Using /UB, /LB • 1014 Read/Write Cycles • NoDelay Writes • Page Mode Operation to 40MHz • Advanced High-Reliability Ferroelectric Process
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Original
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FM22L16
256Kx16
512Kx8
40MHz
256Kx16
FM22L16
44-pin
FM20L08
FM22L16-55-TG
FM22L16-5
e1 fram
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PDF
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FM22L16-55-TG
Abstract: FM20L08 FM22L16 MS-024g TSOP-II 44 Recommended PCB Footprint
Text: Preliminary FM22L16 4Mbit FRAM Memory Features 4Mbit Ferroelectric Nonvolatile RAM • Organized as 256Kx16 • Configurable as 512Kx8 Using /UB, /LB • 1014 Read/Write Cycles • NoDelay Writes • Page Mode Operation to 40MHz • Advanced High-Reliability Ferroelectric Process
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Original
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FM22L16
256Kx16
512Kx8
40MHz
256Kx16
FM22L16
FM22L16,
FM22L16-55-TG
FM22L16-55-TG
FM20L08
MS-024g
TSOP-II 44 Recommended PCB Footprint
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PDF
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TSOP-II 44 Recommended PCB Footprint
Abstract: FM22L16-55
Text: FM22L16 4Mbit Asynchronous F-RAM Memory Features 4Mbit Ferroelectric Nonvolatile RAM • Organized as 256Kx16 Configurable as 512Kx8 Using /UB, /LB 1014 Read/Write Cycles NoDelay Writes Page Mode Operation to 40MHz Advanced High-Reliability Ferroelectric Process
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Original
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FM22L16
256Kx16
512Kx8
40MHz
256Kx16
TSOP-II 44 Recommended PCB Footprint
FM22L16-55
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PDF
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Untitled
Abstract: No abstract text available
Text: FM22LD16 4Mbit F-RAM Memory Features 4Mbit Ferroelectric Nonvolatile RAM • Organized as 256Kx16 Configurable as 512Kx8 Using /UB, /LB 1014 Read/Write Cycles NoDelay Writes Page Mode Operation to 40MHz Advanced High-Reliability Ferroelectric Process
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Original
|
FM22LD16
256Kx16
512Kx8
40MHz
256Kx16
FM22LD16
FM22LD16-55-BG
C8556953BG1
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PDF
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FM22L16
Abstract: FM22L16-55-TG
Text: Pre-Production FM22L16 4Mbit F-RAM Memory Features 4Mbit Ferroelectric Nonvolatile RAM • Organized as 256Kx16 • Configurable as 512Kx8 Using /UB, /LB • 1014 Read/Write Cycles • NoDelay Writes • Page Mode Operation to 40MHz • Advanced High-Reliability Ferroelectric Process
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Original
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FM22L16
256Kx16
512Kx8
40MHz
256Kx16
FM22L16
FM22L16-55-TG
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PDF
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A1815
Abstract: 10101B 10010b
Text: NROM4EE SAIFUN PROPRIETARY 4Mbit 512K x 8 PARALLEL EEPROM 2.7 Volt Low Power EEPROM With Basic Flash Functionality LOGIC DIAGRAM GENERAL DESCRIPTION The NROM4EE is a 4Mbits high performance, low power parallel EEPROM device that supports also basic Flash functionality. The device is typically
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Original
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128-byte
10111B
11000B
11001B
11010B
11011B
11100B
11101B
11110B
11111B
A1815
10101B
10010b
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PDF
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SST29SF040
Abstract: No abstract text available
Text: 4 Mbit x8 Small-Sector Flash SST29SF040 / SST29VF040 Preliminary Specifications SST29SF/VF040 4Mbit (x8) Byte-Program, Small-Sector flash memories FEATURES: • Organized as 512K x8 • Single Voltage Read and Write Operations – 4.5-5.5V-only for SST29SF040
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Original
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SST29SF040
SST29VF040
SST29SF/VF040
SST29SF040
S71160-07-000
|
PDF
|
|
noise immunity for IC 7432
Abstract: .dd2 nRF24Z1 schematic atx 250 digital ic 7432 virtual surround dsp mcu N-7075 nRF24xx QFN36 ATX 2005 schematic diagram
Text: PRELIMINARY PRODUCT SPECIFICATION nRF24Z1 2.4GHz wireless audio streamer FEATURES APPLICATIONS • Low cost 0.18u CMOS process, 36 pin 6x6mm QFN package Single chip 2.4GHz RF transceiver 4Mbit/sec RF link Input/output sample rate up to 48kSPS, 24 bit Programmable latency
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Original
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nRF24Z1
48kSPS,
N-7075
nRF24Z1
noise immunity for IC 7432
.dd2
schematic atx 250
digital ic 7432
virtual surround dsp mcu
nRF24xx
QFN36
ATX 2005 schematic diagram
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PDF
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M128E32
Abstract: 4Mbit eeprom 28 pin 128k eeprom
Text: M128E32 128K x 32 EEPROM Issue 2.1 December 2007 General Description Features The M128E32 is a high reliability 4Mbit EEPROM with access times of 120, 150 and 200ns. The part is normally organised as 128Kx32bits wide but is user configurable as 256Kx16 or 51Kx8. For surface
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Original
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M128E32
M128E32
200ns.
128Kx32bits
256Kx16
51Kx8.
MIL-STD-883
MIL-STD-883
4Mbit eeprom
28 pin 128k eeprom
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PDF
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f173
Abstract: No abstract text available
Text: 4 Mbit x8 Small-Sector Flash SST29SF040 / SST29VF040 Preliminary Specifications SST29SF/VF040 4Mbit (x8) Byte-Program, Small-Sector flash memories FEATURES: • Organized as 512K x8 • Single Voltage Read and Write Operations – 4.5-5.5V-only for SST29SF040
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Original
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SST29SF040
SST29VF040
SST29SF/VF040
SST29SF040
S71160-06-000
f173
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 128K x 32 EEPROM Module PUMA 68E4001/A-12/15/20 Issue 4.2 : November 1998 11403 West Bernado Court, Suite 100, San Diego, CA 92127. Tel No: 619 674 2233, Fax No: (619) 674 2230 Description The PUMA 68E4001/A is a 4Mbit CMOS EEPROM module in a JEDEC 68 pin surface
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Original
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68E4001/A-12/15/20
68E4001/A
200ns
24hrs
120secs
120-180secs
10-40secs
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PDF
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AVR 8515 microcontroller
Abstract: FPGA AMI coding decoding tri state AOI222 AOI2223 AOI2223H AOI222H ATL35 0.35-um CMOS standard cell library inverter
Text: Features • System Level Integration Technology • 0.35 µm Geometry in Triple-level Metal • I/O Interfaces; CMOS, LVTTL, LVDS, PCI, USB – Output Currents up to 20 mA, 5V Tolerant I/O • Embedded Flash Memory with Capacities of 1Mbit, 2Mbit or 4Mbit
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Original
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22-bit
16-bit
1184B
03/00/xM
AVR 8515 microcontroller
FPGA AMI coding decoding
tri state
AOI222
AOI2223
AOI2223H
AOI222H
ATL35
0.35-um CMOS standard cell library inverter
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PDF
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ATX 2005 schematic diagram
Abstract: .dd2 nRF24Z1 atx schematic CC1608-0603 nRF24xx atx power supply schematic dc schematic atx 250 2.4GHz RECEIVER IC atx power supply schematic
Text: PRELIMINARY PRODUCT SPECIFICATION nRF24Z1 2.4GHz wireless audio streamer FEATURES APPLICATIONS • • • • • • • • • • • • • • • Low cost 0.18u CMOS process, 36 pin 6x6mm QFN package Single chip 2.4GHz RF transceiver 4Mbit/sec RF link
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Original
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nRF24Z1
96kHz,
24bits
48kHz,
16bits
N-7075
nRF24Z1
ATX 2005 schematic diagram
.dd2
atx schematic
CC1608-0603
nRF24xx
atx power supply schematic dc
schematic atx 250
2.4GHz RECEIVER IC
atx power supply schematic
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PDF
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max3843
Abstract: pc646
Text: PSD835G2V Flash PSD, 3V Supply, for 8-bit MCUs 4Mbit + 256 Kbit Dual Flash Memories and 64Kbit SRAM PRELIMINARY DATA FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ FLASH IN-SYSTEM PROGRAMMABLE ISP PERIPHERAL FOR 8-BIT MCUs DUAL BANK FLASH MEMORIES
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Original
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PSD835G2V
64Kbit
64Kbyte)
max3843
pc646
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 128K x 32 EEPROM Module PUMA 68E4001/A-12/15/20 Issue 4.3 : May 2001 Elm Road, West Chirton, NORTH SHIELDS, Tyne & Wear NE29 8SE, England Tel. +44 0 191 2930500 Fax. +44 (0) 191 2590997 Description The PUMA 68E4001/A is a 4Mbit CMOS EEPROM module in a JEDEC 68 pin surface
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Original
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68E4001/A-12/15/20
68E4001/A
200ns
JED-STD-020.
200pcs
183OC
225OC
219OC
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PDF
|
Untitled
Abstract: No abstract text available
Text: TOSHIBA cIOtì 7 2 4 f l 0Q2R00S 370 TC58A040F PRELIMINARY 4Mbit 4M x 1 BIT CMOS AUDIO NAND EEPROM Description The TC58A040 is a single 5 volt 4M bit NAND Electrically Erasable and Programmable Read Only Memory (NAND EEPROM) organized as 256 bits x 128 pages x 128 blocks.
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OCR Scan
|
0Q2R00S
TC58A040F
TC58A040
NV04010196
OP28-P-45Q
0QETD31
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PDF
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KMCJ532512
Abstract: KM23C1000-20 KM28C64B KMM594 KM718B90-12 zip 40pin 30-pin simm memory "16m x 8" KM41C4000C-6 KM41C16000ALL KM48V2104AL
Text: FUNCTION GUIDE MEMORY ICs 1. 1.1 INTRODUCTION Dynamic RAM KM41C1000C-6 1Mx1 KM41C1000CL-6 KM41C1000CSL-6 25 6Kx4 KM44C256C-6 KM44C256CL-6 KM44C256CSL-6 4Mbit— 4Mx1 T KM41C4000C-5 — KM41C4000C-6 KM41C4000C-7 KM41C4000C-8 KM41C4000CL-5 KM41C4000CL-6 KM41C4000CL-7
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OCR Scan
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KM41C1000C-6
KM41C1000CL-6
KM41C1000CSL-6
KM44C256C-6
KM44C256CL-6
KM44C256CSL-6
KM41C4000C-5
KM41C4000C-6
KM41C4000C-7
KM41C4000C-8
KMCJ532512
KM23C1000-20
KM28C64B
KMM594
KM718B90-12
zip 40pin
30-pin simm memory "16m x 8"
KM41C4000C-6
KM41C16000ALL
KM48V2104AL
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PDF
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