PC-100
Abstract: PC100 1998
Text: 4M x 72 Bit PC-100 SDRAM DIMM PC-100 SYNCHRONOUS DRAM DIMM 72403sSEM4G19T 168 Pin 4Mx72 SDRAM DIMM Unbuffered, 4k Refresh, 3.3V with SPD Pin Assignment General Description The 72403sSEM4G19T is a 4Mx72 bit, 19 chip, 168 Pin DIMM module consisting of 18 1Mx8x2
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PC-100
PC-100
72403sSEM4G19T
4Mx72
DS681-0
72403sSEM4G19T
PC100 1998
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72 pin dimm
Abstract: No abstract text available
Text: 4M x 72 Bit 3.3V UNBUFFERED EDO DIMM Extended Data Out EDO DRAM DIMM 72405sEGM2G19TD 168 Pin 4Mx72 EDO DIMM Unbuffered, 2k Refresh, 3.3V with SPD Pin Assignment General Description The 72405sEGM2G19TD is a 4Mx72 bit, 19 chip, 3.3V, 168 Pin DIMM module consisting of (18) 4Mx4
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72405sEGM2G19TD
4Mx72
DS391-0
72 pin dimm
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Untitled
Abstract: No abstract text available
Text: White Electronic Designs WEDPN4M72V-XB2X PRELIMINARY* 4Mx72 Synchronous DRAM GENERAL DESCRIPTION FEATURES n n n n n n n n n n n High Frequency = 100, 125MHz Package: • 219 Plastic Ball Grid Array PBGA , 21 x 21mm Single 3.3V ±0.3V power supply Fully Synchronous; all signals registered on positive
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WEDPN4M72V-XB2X
4Mx72
125MHz
WEDPN4M72V-XB2X
32MByte
256Mb)
WEDPN4M72V
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Untitled
Abstract: No abstract text available
Text: DRAM MODULE KMM372F404CS KMM372F404CS EDO Mode 4M x 72 DRAM DIMM with ECC Using 4Mx16 & 4Mx4, 4K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM372F404C is a 4Mx72bits Dynamic RAM high density memory module. The Samsung KMM372F404C consists of four 4Mx16bits & two 4Mx4bits CMOS DRAMs in
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KMM372F404CS
KMM372F404CS
4Mx16
KMM372F404C
4Mx72bits
4Mx16bits
400mil
168-pin
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Untitled
Abstract: No abstract text available
Text: WEDPN4M72V-XBX HI-RELIABILITY PRODUCT 4Mx72 Synchronous DRAM FEATURES GENERAL DESCRIPTION • High Frequency = 100, 125MHz The 32MByte 256Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 5 chips containing 67,108,864 bits. Each chip is internally configured as a quad-bank DRAM with a
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WEDPN4M72V-XBX
4Mx72
125MHz
WEDPN4M72V-XBX
32MByte
256Mb)
100MHz
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Untitled
Abstract: No abstract text available
Text: M372C0405CT0-C DRAM MODULE Buffered 4Mx72 DIMM 4Mx16 & 4Mx4 base Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) • The 4th. generation of 64Mb DRAM components are applied for this module. M372C0405CT0-C M372C0405CT0-C DRAM MODULE
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M372C0405CT0-C
4Mx72
4Mx16
M372C0405CT0-C
4Mx72bits
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WEDPN4M72V-XBX
Abstract: No abstract text available
Text: WEDPN4M72V-XBX 4Mx72 Synchronous DRAM FEATURES GENERAL DESCRIPTION ! High Frequency = 100, 125MHz ! Package: The 32MByte 256Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 5 chips containing 67,108,864 bits. Each chip is internally configured as a quadbank DRAM with a synchronous interface. Each of the chip’s
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WEDPN4M72V-XBX
4Mx72
125MHz
32MByte
256Mb)
216-bit
100MHz,
WEDPN4M72V-XBX
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Untitled
Abstract: No abstract text available
Text: Discontinued 9/98 - last order; 3/99 last ship IBM11M1730BB1M x 72 E10/10, 3.3V, Au. IBM11M4730CH IBM11M4730CB IBM11M4730CF 4M x 72 DRAM Module Features • 168-Pin JEDEC-Standard 8-Byte Dual In-Line Memory Module • 4Mx72 Fast Page Mode DIMM • Performance:
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IBM11M1730BB1M
E10/10,
IBM11M4730CH
IBM11M4730CB
IBM11M4730CF
168-Pin
4Mx72
110ns
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WEDPN
Abstract: No abstract text available
Text: WEDPN4M72V-XBX HI-RELIABILITY PRODUCT 4Mx72 Synchronous DRAM PRELIMINARY* FEATURES GENERAL DESCRIPTION • High Frequency = 100, 125MHz* The 32MByte 256Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 5 chips containing 67,108,864 bits.
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WEDPN4M72V-XBX
4Mx72
125MHz*
32MByte
256Mb)
216-bit
100MHz
125MHz
WEDPN
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DQ75
Abstract: No abstract text available
Text: WEDPN4M72V-XBX HI-RELIABILITY PRODUCT 4Mx72 Synchronous DRAM PRELIMINARY* FEATURES GENERAL DESCRIPTION • High Frequency = 100, 125MHz The 32MByte 256Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 5 chips containing 67,108,864 bits.
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WEDPN4M72V-XBX
4Mx72
125MHz
32MByte
256Mb)
216-bit
100MHz
DQ75
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PQ62
Abstract: No abstract text available
Text: IBM11M4720D4M x 7212/11, 5.0V, AuMMDL08DSU-011033723. IBM11M4720D 4M x 72 DRAM MODULE Features • Optimized for byte-write parity applications • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • System Performance Benefits: - • 4Mx72 Fast Page Mode DIMM
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IBM11M4720D4M
AuMMDL08DSU-011033723.
IBM11M4720D
4Mx72
110ns
130ns
SA14-4602-03
PQ62
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DIMM 72 pin out
Abstract: IBM11M4730C4M
Text: IBM11M4730C4M x 72 E12/10, 5.0V, Au. IBM11N4845BB IBM11N4845CB 4M x 72 Super EOS Module Preliminary Features • 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual In-line Memory Module • 4Mx72 Extended Data Out Page Mode DIMMS • Performance: -6R • System Performance Benefits:
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IBM11M4730C4M
E12/10,
IBM11N4845BB
IBM11N4845CB
4Mx72
104ns
DIMM 72 pin out
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Untitled
Abstract: No abstract text available
Text: White Electronic Designs WEDPN4M72V-XBX 4Mx72 Synchronous DRAM FEATURES GENERAL DESCRIPTION n High Frequency = 100, 125MHz n Package: The 32MByte 256Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 5 chips containing 67,108,864 bits. Each chip is internally configured as a quadbank DRAM with a synchronous interface. Each of the chip’s
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4Mx72
125MHz
WEDPN4M72V-XBX
WEDPN4M72V-XBX
32MByte
256Mb)
100MHz
100MHz,
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Untitled
Abstract: No abstract text available
Text: IBM11 N4845BB IBM11 N4845CB Preliminary 4M x 72 Chip-Kill Protect ECC-on-DIMM Module Features • 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual In-line Memory Module System Performance Benefits: -Non buffered for increased performance • 4Mx72 Extended Data Out Page Mode DIMMs
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IBM11
N4845BB
N4845CB
4Mx72
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Untitled
Abstract: No abstract text available
Text: KMM372V400AK/AS DRAM MODULE KMM372V400AK/AS Fast Page Mode 4Mx72 DRAM DIMM with ECC, 4K Refresh, 3.3V FEATURES GENERAL DESCRIPTION • Performance Range: The Sam sung K M M 372V 400A is a 4M bit x 72 Dynam ic RAM high density m em ory module. The KMM372V400A - 6
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KMM372V400AK/AS
KMM372V400AK/AS
4Mx72
KMM372V400A
110ns
130ns
48pin
KM44V4000AK,
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Untitled
Abstract: No abstract text available
Text: KMM372C412AK/A S DRAM MODULE KMM372C412AK/AS Fast Page Mode 4Mx72 DRAM DIMM with QCAS, 2K Refresh, 5V FEATURES GENERAL DESCRIPTION • Performance Range: The Sam sung KM M 372C412A is a 4M bit x 72 Dynam ic RAM high density m em ory module. The KMM372C412A - 5
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KMM372C412AK/A
KMM372C412AK/AS
4Mx72
372C412A
KMM372C412A
300mil
110ns
130ns
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KMM374S403BTN-G0
Abstract: KMM374S403BTN-G2
Text: KMM374S403BTN NEW JEDEC SDRAM MODULE KMM374S403BTN SDRAM DIMM 4Mx72 SDRAM DIMM with ECC based on 2Mx8, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM374S403BTN is a 4M bit x 72 Synchronous - Performance range Dynamic RAM high density memory module. The Samsung
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KMM374S403BTN
KMM374S403BTN
4Mx72
400mil
168-pin
QQ375Q6
KMM374S403BTN-G0
KMM374S403BTN-G2
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Untitled
Abstract: No abstract text available
Text: DRAM MODULE KM M 3 7 2 E 4 0 4 B S Buffered 4Mx72 DIMM 4Mx16 & 4Mx4 base Revision 0.0 Sept. 1997 DRAM MODULE KM M 3 7 2 E 4 0 4 B S Revision History Version 0.0 (Sept, 1997) ; Removed two AC parameters tCACP(access time from CAS) and tAAP(access time from col. addr.) in AC CHARACTERISTICS.
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4Mx72
4Mx16
372E404BS
4096cycles/64ms
100Max
54Max)
KMM372E404BS
-KM416C4104BS
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Untitled
Abstract: No abstract text available
Text: KMM372V400AK/AS DRAM MODULE KMM372V400AK/AS Fast Page Mode 4Mx72 DRAM DIMM with ECC, 4K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM372V400A is a 4M bit x 72 Dynamic RAM high density memory module. The Samsung KMM372V400A consists of eighteen
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KMM372V400AK/AS
4Mx72
KMM372V400AK/AS
KMM372V400A
300mii
48pin
168-pin
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samsung power module
Abstract: KMM374S400BTN-G2 ADQ37 71b4
Text: KMM374S400BTN NEW JEDEC SDRAM MODULE KMM374S400BTN SDRAM DIMM 4Mx72 SDRAM DIMM with ECC based on 4Mx4, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM374S400BTN is a 4M bit x 72 Synchronous - Performance range Dynamic RAM high density memory module. The Samsung
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KMM374S400BTN
KMM374S400BTN
4Mx72
400mil
168-pin
KMM374S400BTN-G8
KMM374S40OBTN-G0
KMM374S400BTN-G2
samsung power module
ADQ37
71b4
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Untitled
Abstract: No abstract text available
Text: KM M 3 7 2 F 4 0 0 C K 2 / C S 2 KMM372F41 0CK2/CS2 DRAM MODULE 4Mx72 Buffered DIMM 4MX4 Base with ECC Revision 2.0 November 1997 -1 LE C TR Û M - Rev. 2.0 (Nov. 1997) KM M 3 7 2 F 4 0 0 C K 2 / C S 2 D R A M M O D U L E _ K M M 3 7 2 F 4 1 0 C K 2 / C S 2
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OCR Scan
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KMM372F41
4Mx72
KMM372F40
150Max
350Max
89Max)
KMM372F400CK2/CS2
4004C
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Untitled
Abstract: No abstract text available
Text: KMM372F400BK/BS KMM372F41OBK/BS DRAM MODULE KMM372F400BK/BS & KMM372F41 OBK/BS Fast Page with EDO Mode 4Mx72 DRAM DIMM with ECC, 4K & 2K Refresh, 3.3V G EN ERA L D ESC RIPTIO N FEATURES The Samsung KMM372F40 1 0B is a 4M bit x 72 Dynamic RAM high density memory module. The
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KMM372F400BK/BS
KMM372F41OBK/BS
KMM372F400BK/BS
KMM372F41
4Mx72
KMM372F40
300mil
48pin
168-pin
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926W
Abstract: m0001d
Text: ' H Y U N D A I -J ^ • HYM572A404CN-Series Buffered 4Mx72 bit EDO DRAM MODULE based on 4Mx4 DRAM, with ECC, 5V, 4K-Refresh GENERAL DESCRIPTION The HYM572A404C N-Series is a 4Mx72-bit Extended Data Out mode CMOS DRAM module consisting of
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HYM572A404CN-Series
4Mx72
HYM572A404C
4Mx72-bit
HY5116404C
16-bit
HYM572A404CNG/CTNG
168-Pin
A0-A11,
DQ0-DQ71)
926W
m0001d
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CDG36
Abstract: No abstract text available
Text: •M Y U M D ftl > HYM572A404A N-Series 4Mx72-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM572A404A Is a 4M x 72-bit EDO mode CMOS DRAM module consisting of eighteen HY51164Q4A in 24/28 pin SOJ or TSOPII and two 16-bit BiCMOS line driver in TSSOP on a 168 pin glass-epoxy printed
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OCR Scan
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HYM572A404A
4Mx72-bit
72-bit
HY51164Q4A
16-bit
HYM572A4Q4ATNG
572A404
4Mx72-blt
HYM572A404ATNG
CDG36
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