4N10L35 Search Results

4N10L35 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: IPG20N10S4L-35 OptiMOS -T2 Power-Transistor Product Summary V DS 100 V R DS on ,max4) 35 mW ID 20 A Features • Dual N-channel Logic Level - Enhancement mode PG-TDSON-8-4 • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature	Original	IPG20N10S4L-35 4N10L35	PDF

Catalog Datasheet

Type

Document Tags

PDF

Untitled

Abstract: No abstract text available
Text: IPG20N10S4L-35 OptiMOS -T2 Power-Transistor Product Summary V DS 100 V R DS on ,max4) 35 mW ID 20 A Features • Dual N-channel Logic Level - Enhancement mode PG-TDSON-8-4 • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature

Original

IPG20N10S4L-35 4N10L35

PDF