Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    4N60 TO-251 UTC Search Results

    4N60 TO-251 UTC Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    ADC1038CIWM Rochester Electronics LLC ADC, Successive Approximation, 10-Bit, 1 Func, 8 Channel, Serial Access, PDSO20, SOP-20 Visit Rochester Electronics LLC Buy
    TL505CN Rochester Electronics LLC ADC, Dual-Slope, 10-Bit, 1 Func, 1 Channel, Serial Access, BIMOS, PDIP14, PACKAGE-14 Visit Rochester Electronics LLC Buy
    ML2258CIQ Rochester Electronics LLC ADC, Successive Approximation, 8-Bit, 1 Func, 8 Channel, Parallel, 8 Bits Access, PQCC28, PLASTIC, LCC-28 Visit Rochester Electronics LLC Buy
    CA3310AM Rochester Electronics LLC ADC, Successive Approximation, 10-Bit, 1 Func, 1 Channel, Parallel, Word Access, CMOS, PDSO24, PLASTIC, MS-013AD, SOIC-24 Visit Rochester Electronics LLC Buy
    CA3310M Rochester Electronics LLC ADC, Successive Approximation, 10-Bit, 1 Func, 1 Channel, Parallel, Word Access, CMOS, PDSO24, PLASTIC, MS-013AD, SOIC-24 Visit Rochester Electronics LLC Buy

    4N60 TO-251 UTC Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    4N60B

    Abstract: 4N60 TO-251 UTC 4n60b TO220 k4n60 4n60 mosfet 4n60 4N60 TO-220 UTC utc 4n60l 4n60l 4n60a
    Text: UNISONIC TECHNOLOGIES CO., LTD 4N60 Power MOSFET 4 Amps, 600/650 Volts N-CHANNEL POWER MOSFET 1 1 TO-220 TO-251 „ DESCRIPTION The UTC 4N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original
    PDF O-220 O-251 O-220F O-220F1 O-252 QW-R502-061 4N60B 4N60 TO-251 UTC 4n60b TO220 k4n60 4n60 mosfet 4n60 4N60 TO-220 UTC utc 4n60l 4n60l 4n60a

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 4N60 Power MOSFET 4A, 600V N-CHANNEL POWER MOSFET 1 1 TO-220  TO-220F1 1 1 1 TO-220F2 TO-251 1 1 TO-262 FEATURES * R DS ON = 2.5Ω @V GS = 10 V * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, high Ruggedness


    Original
    PDF O-220 O-220F1 O-220F2 O-251 O-262 O-220F QW-R502-061.

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 4N60-S Power MOSFET 4A, 600V N-CHANNEL POWER MOSFET 1 1 TO-220  TO-220F1 1 1 1 TO-220F2 TO-251 1 1 TO-262 FEATURES * R DS ON = 2.5Ω @ V GS =10 V, I D =2.2A * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, high RuggednessA


    Original
    PDF 4N60-S O-220 O-220F1 O-220F2 O-251 O-262 O-220F 4N60-S QW-R502-973.